I.P.R.S.- BANEASA TRANZISTOARE CU SILICIU SILICON TRANSISTORS 1989Acest catalog a fost elaborat in cadrul Intreprinderii de Piese Radio si Semiconductori Baneasa de: ing. T. DUNCA ing. D. RAIU ing. D. SDRULLA Au colaborat: C. BARGAUNAS ing. G. CALINESCU fiz. M. CIOBANU. ing. D. CRACEA E. DUMITRU M. IVAN T. NEDELCU ing. V. ULIERU Ynformatiile din acest CATALOG au fost verificate cu atentie si se pot con- sidera reale si utile. Cu toate acestea, nu se asumé nici o responsabilitate pentru eventualele omi- siuni sau inadvertente. In acelasi timp, LP.RS. — Baneasa nu raspunde de interpretarea gresité a in- formatiilor continute in acest CATALOG. Specificatiile componentelor electronice produse de LP.RS, sint supuse modificd- rilor. De asemenea, produzdtorul are posibilita- tea, la cererea beneficiarilor, si livreze componentele sale mdsurate si in alte conditii electrice sau mecano-climatice. coordonator The informations of this DATA BOOK hhas been carefully checked and is beli- ved to be true and reliable. However, no responsability is assumed for possible omissions or inaccuracies. In the same time, 1, — Baneasa has no responsat ase of, wrons interpretation of informations contained in this DA'TA BOOK. Speciffications of electronic components manufactured by LP.RS. are subject to chanse. Also, the manufacturer has _ possibility, at custom demand, to deliver his com- ponents tested at any other electrical and mechanical conditions. UZ INTERN INTREPRINDEREA POLIGRAFICA CLUJ, Municipiul Cluj-Napoca, cd. nr. 442/1987 (2TRANZISTOARE CU EFECT DE CiMP . . FIELD-EFFECT ‘TRANSISTORS 2N 5020* 2N s02i* TRANZISTOARE DE MICA PUTERE .. . Low POWER TRANSISTORS BC BC BC BC BC BC BC BC Be BC BC BC BC BC BC BC BC BC BC BC BC BC 107 108 109. 170 im 172 173 174 17. 178. 179 190. . 250 251 252 253 256... 261 262... 263 266 327 BC 38 ....... 13, 15 138 21 24 24 27 29 29 28 33 35 35 35 35 39 39 39 2 44 o 47 “ AT 50 0 50 $0 56 5 *DATE PRELIMINARE. BC BC BC BC BC BC BC BC BC BF 2575 BY 258 . BP 259 BF 297 BF 298... BY 420A, SESas 92 97 97 97 101 101 101 104 107 104 107 110 110 110 110 113 116 113 CUPRINS TABLE OF CONTENTS BRA... 116 2N929....... 9 INH... 19 TRANZISTOARE DF. INALTA FRECVENTA 123 HIGH FREQUENCY TRANSISTORS BRIS ....... 125 BRIG7....... 129 BF IB... 2... 133 BF 1738S. .... 6 138 BF 180... 2... M2 BE ISL... .. az BF 184. M7 BF 18 2... 2. M47 BY 198 . .. SL BF 19. ...... 154 BF 200.0... . 187 BF2M......- 162 BPQS... 2... 162 BF 20... 0.0 166 BF 241 se 166 BF 254....... 169 BR255....... 169 BRQ2A .....- 172 BF3IGA ...... 177 BF450....... 181 BF4SI... 2... 181 BR A7*.. 2... . 184 BF S06... 2. + 187 BFSO9....... 191 BF9It... 2... 194 BFW 9 2... - 197 BPX 89....... 198 BFY90....... 202 PRELIMINARY DATACUPRINS TABLE OF CONTENTS TRANZISTOANE DE COMUTATIE ... SWITCHING TRANSISTORS BSW 1A... BSW 22 ...... BSW 22A...... BSX 12.2.2... BSX12A...... BSX 128. . oe BSX21....... BSX 45. BSX46..... BSX 47.2.2... BSX 51. BSX 51A BSX 513 tee BSX 52.0.0... BSX52A.. BSX 52B. 1... QN 70... ....~ QN 708... ee 205 208 208 208 21 2u1 2 208 217 217 217 222 QN 1613 2. ee 2N 618A... 2. QNUW .. eee QNIMA... 2. QN 2217 2... QN 2218 2.2... 2N 228A... QN 2219 2.2... QN 22198... 2N 2220 ...... QN 2221 2... 6. ON 221A... 2. 2N 2222 2.0... QN 22228... « QN 2368 2.1... 2N 23685 22... 2N 2369.1... 2N 23698... 2. 2N 2800... 2. 2N 2891 2.2... 2N 290 2. ee 2N 29044... 2N 2905 2... - 2N 29054... ee 2N 2906 2... 2N 29068... .... 2N 2907... 2. QN 207A... 2... TRANZISTOARE DE MARE PUTERE . . . ‘HIGH POWER TRANSISTORS BD 135... 20. BD 136. 2... .: BDIS7.. 21... BD ISB... oe BDI3I9....... BDI0....... BDW2....... 272 217 272 207 282 286 290 286 290 296 300 304 300 304 3il 315 319 323 327 327 331 335 331 335 344 344 349 351 354 351 354 351 354 387 BDIS1.. 2... : BD 18... . oe BD293....... BD 234... 0... BD235.... : BD 26... 2... BD237......, BD 28... 2... BD 433... .«. : BD 434.2... : BD4.. 1... BD436..... oe BD437. 2.0... BD 438. ... 2. BD 4399..... oe BD440....... BD4s1. 2.2.00. BD442...... : BD OB... 2... BD 6H... 0. : BD@S....... BD 66... 2... BDG7....... BD OB... 2... BD@9.... 22. BD60....... BD 6S... .. te BD6SA...... BD66......, BD6H6A...... BDO7....... BDOWA..... : BD68....... RBDEAA .. 2. BDS9...... : BD OA... ... BD 680....... BD 680A... ... BD681......4 BD OIA... 6, 367 367 363 367 371 375 371 375 379 379 379 383 387 391 387 391 387 391 387 391 395 395 395 399 399 395 395 399 395BD RD BDY 29.... 682. 6828 BDY 37. BDY 71. BU BU BU BU BU BU BU Bu BU Bu BU BU BU BU BU BU BU BU BU BU BU BU BU BU BU BU BU BU 3264/6 326A/7 326Aj8 526 . 526/4 526/5 5326/6 5326/7 5326/8 606 606D BUR 607 BUR 607D 399 399 403 406 409 412 412 416 a2 418 418 422 422 418 425 428 428 428 428 #8 431 431 431 431 431 431 435 439 435 439 435 439 443 443 446 446 446 449 449 453 * DATE PRELIMINARE BUR BUR BUR BUR BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUS BUT BUT BUT BUT BUT 608... 608D 806 807 ue was Be ype 1ye* 12° 12A* 12B* 1zjae 12/6" 138 13a" 13/4" 13/5* 13/6" 13/7" ue Mas aya ps" 14y6* 14 ue nat pe ye nyjz BUW 22%...... BUW 23"... BUW 24* BUW 25° . BUW 25/5* 2... BUW 26* BUX BUX HA... . 104 BUX 12A...... 449 453 457 457 460 460 460 463 463 466 466 466 469 469 472, 472, 473 475 475 475 478 478 481 481 481 481 484 484 487 487 487 490 493, 496 499 499 502 511 BUX 404 . BUX 414. BUX 424. BUX 80 tae BUX 8014... BUX 80; CUPRINS TABLE OF CONTENTS BUX 806... BUX 80/7... BUX 81 . BUX 81/9. . BUX 82 BUX 82/4. BUX 82/5 BUX 82/6... BUX 82/7. BUX 83 6... BUX 83/9... . BUX 84* BUX 84/6" BUX a5* BUX 86* . BUX 86/4* BUX 86/5* BUX 86/6* BUX 86/7* BUX 87* BUX 87/9" 100/3°. 100/4e. 100/58". . cr GT oT cr cr cr cr cr GT cr cr 100/6° . 100/7* . a 10/9" . 100/10* 150/3* . 150/4" . 150/5% . PRELIMINARY DATA EfCUPRINS TABLE OF CONTENTS GT 15038". 2... 586 SDM S0IOe 2... 584 TD 2641... 2. 60S. GT 307". 2... 856 SDMSOLY 1)... 584 TD 26... 808 GY 10/8". 2... 556 SDM SOI 2... S84 TD GA... 608 Orr 1509. 2... 586 SDM... 584 TD BL... 608 cer isojioe | 586 SDMS0I* ..... 587 TD 26SC 1... 608 1 250). 559 SDM 5015* . 2... 587 TD 2651... 608 559 SDM 5016+ ..... 587 TD36G....... 612 559 SDMSOI ..... 587 TD 366A ...... Giz 559 SDT 9201...... 590 TD36GB...... 612 559 SDT 9202... . 2. 590 TD 366C LL 612 359 SDT 9203. ..... 590 TD367....... 616 359 SDT 9204.0... 590 1D367A sis 859 SDT 9205...... 880 TD36B...... 615 Gr 562 SDT 906...... 590 TDC ...... 615 or 362 SDT 9207...... 590 TDO.. 2... 618 or 362 SDT 9208...... 59 TD6MH....... 62h Gr 562 SDT 9209...... 590 TDGHS....... ois Gr 562 SDT 920...... 590 TD6G....... 62 ors 862 SDT 9301.00... 5 TDGI7. 1.1... 618 er 562 SDT 9902...... 50 TDGIB....... 621 GT 4000 5... 862 SDT 9R03...... 54 IDGI9.. 2... 618 SDM 4001.2... $66 SDT 9304...... 594 TD6SO....... 621 SDM 402. 02 566 SDT 9305...... 594 2N M87 ...... 624 SDM 4003.05... 866 SDT 9306. ..... 594 2N 1488 2... 628 SDM 4004.5... 569° SDT 9307...... 594 2N1489 ...... 626 SDM4005.... 5. 569° SDT 9308.2... .. 584 2N 1490 1... 62h SDM 4006... .... 889 SDT 9309...... 694 2N30H 2.2... 627 SDM 40I0...... 872 TDI....... 597 2N3055 2.2... 630 SDM4OIT. 2... 872 TD IAL... 597 ON 8085... 680 SPM40I2...... 572 TD 16h... ... 597 QIN SSW... 2... 620 SDM 4013.20... 572 TD 597 2N 3055/1... ... 633 SpM 40M. 875 TD 597 ON 30552... .. 633 SDM 4015.2... 875 TD GOL 2N 3055/9... 633 SpM 4016.2... 875 TD GOL ON 9055/4... 2. . 633 SDM 4017.52... 875 TD : + GOL aN 3055/5... 2... 638 SDM S001 5... 878 TD GC 1... OO on gossig 638 BM 5002" 5... 878 TD 1... 2. GOL 500" 2... 578 TD 264....... 605 PN 9055/7... . . 699 sod* ..... 581 TD 264A... . 605 «(AN 3055/8... . 633 5005"... . SBL TD 2B ...... 605 2NS055/9...... 633 5006* ..... S81 TD 2C 1... .. 605 AN SOE/IO..... 693 “DATE PRELIMINARE___ 6 ___ PRELIMINARY DATA2N aN aN 2N 2N 2N 2N 2N Qn 2N 2N Qn aN 2N aN 2N 2N aN 2N aN aN 2N 2N 2N 2N aN 2N 2N 2N oN 2N 2N Qn 2N 2N 2N 2N 2N 2N aN *DATE PRELIMINARE 3441 3442 3771 3772 3773 4347 4348 294 5296 5298 5490 5492 5494 5496 5875¢ 5576 557° 5578* 5579° 5580 3871 5871/1 5871/2 . 5872 58724 58728 5873 5873/1. 5873/2 5874 5874A . 58742 . 6253 6254 6257 6258 6259 6260 6261 6262 see + 650 2N aN 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N aN 2N 2N 2N 2N 2N aN 2N oN 2N aN FOTO-TRANZISTOARE PHOTO-TRANSISTORS FT 6263, 6264 e274 6275 6276 6277 6371 6653 66534, 66538 6653/1 6653/2 6653/3 6653/4 6654 66548. 66548 6654/1 6654/2 6654/3 6654/4 6655 66554 6655B . . 6655/1 . 6655/2 6655/3 6635/4 301%. FP 302%. 2... rT rr 303° . 304". 709 n2 72 72 72 713 75 ns 718 718 718 7138 ma 721 724 724 704 724 724 727 729 733 733 733 733 736 736 FT 313°. . FT 314*. ‘TRANZISTOARE UNISONCTIUNE UNIJUNCTION TRANSISTORS 2N 2646 2N 2647. ONOUA ABORDANK A PROBLEMEL CALITATIN ‘TIPURI NOI NEW TYPES FT201...... FT 202 .. 2N 3439° . 2N 3440° ON 54I5* 2... 2N 8416" 2N 5835* 2N 5836 2N 5837¢ . 2N 6338 AY. 2N 6939 A* 2N 6340 A® 6341 A* 6436 A® 2N 6437 At 2N 6438 At CAPSULE . CASES 799 rat Al ___ PRELIMINARY DATA 7INDEX ALFANUMERIC ALPHANUMERICAL INDEX BOUT... 2... 89 BOY SB... 2... 83 BDO... 399 BEM 29 BCYS9....... 83 BD6A...... 399 POM 29 BOY... .... 88 BDG7... 2... 395 HOI... eee. 83 BOY BL... 92 BD GA... ... 305 WEIL eee ee. BS BOYD... 92 BDGB.. LL... 399 HOW... 33 BDI. ...... 351 BDGBA...... 399 173. 35 BDI36....... 954 BDO... .... 395 35 BDIS7....... 351 BDOA...... 395 39 BDI... .... 354 BD6.... 399 39 BDI399..... 351 BD GSA... .. . 399 39 BDMO....... 354 BDOB....... 395 2 BDM2....... 337 BDGSIA...... 395 44 BDISI....... 360 BDOR....... 399 47 BD ISR... .... 360 BD GBA... 399 47 BDI83....... 360 BDY29....... 403 47 BD23....... 363 BDY37...... 406 47 BW... es. 367 BDY71....... 409 50 BD235....... 363 BFIS....... 125 50 BD236....... 367 BRIC7......~ 129 50 BD237....... 363 BRI29....... 133 50 BD238....... 367 BPI73S..... + 138 55 BD433......: BTL BRIGO.... 2. 2 55 BD 4M... .... 375 BRIS... .... 142 58 BD 4S. .....: SM BRIS... 2. M7 58 BD436....... 375 BFI8S....... 147 GU BD4I7. 2... 379 BF 198... .... 151 61 Bp4g....... 383 BRIM... 2... 154 65 BD499....... 379 BY20....... 187 63 BDA... 2... $83 BR2M....... 162 69 Rp ad... 379 BF2IS.. 2... 162 BDA... ee 383 BF2UO....... 166 RDG... 2 387 BFL... .... 166 RDG... 2... SOL BRUMS. 2... - 8 BD GS... . 0. 387 BRAT. 1... 18 BDOG....... 31 BRI. ...... 169 BD G67. ...... 387 BF2S5....... 169 BD6S....... 39 BF26....... 21 BDO9....... 987 BF27....... 97 BD6S0....... 901 BF2S7E..... 97 BD65....... 39 BF2B....... 97 BD GSA ...... 305 BR29....... 97BR272A ...... BR7...... B28 ....... BF299....... BFSIGA ...... BF4Q0A ...... BFAQIA...... BAA 2.2... BR43A 2... 1. BF450.....-. BR451....- : BF 497 ...-.5. BR ASE... 2. BF 498.2. ..... BFAD... 1... BF 469... 22. - BFAW....... BRAWL... 2... BE 472 BF 479° : BF506....... BFS50O9....... BROI4...... : BFW Mt... BFX 89. ...... BFY 9%... 0.25 BSVI5....... BSVIG....... BSVIT....... BSV 8... 2... BSV90... 2. oe BSV9l.. 22... BSWI9 ... 2... BSW21 ...... BSW2IA...... BSW BSW 2A... .. BSX 12.0.0... BSX 12A. 2... . BSX 128.2... . BSX 21... * DATE PRELIMINARE 172, 101 101 101 17 104 107 104 107 181 181 0 110 no 110 113 116 113 16 187 191 194 197 199 202 217 217 217 222 226 230 234 238 238 241 241 244 244 244 248 INDEX ALFANUMERIC ALPHANUMERICAL INDEX BSX 4 BSX 46 BSX 47.0.0... BSX51....-.. BSX SIA... 6. BSX SIB 6... ee BOX 52...-... BSX S2A.. 0... BSE 52B...... BUQS....... BU 205....... BU 205A... 6. BU26....... BU 27....... BU2B......, BU 208A... .. . BU20B .. 2... BU 209.0... oe BU 326A... 0 BU 3264/4... BU 926A/5 2. BU 3264/6»... BU 9267... BU 3264/8... BU52%....... BU 52/4... BU 52/5 2... 6. BU 526/6 BU 526/7 . : BU 52/8... BU 6... . : gu 6D... 2. BUGO7....... BU GOD... .. BUOB..... BU 608D BU 806" BU 807" BU 930... 2. BUSI... 2... BU 92... +. 252 252 252 257 257 287 261 261 261 412 412 416 412 8 418 422 422 418 425 428 428 428 428 428 431 431 431 431 431 431 435 439 435 439 435 439 443 443 446 446 446 BUR 606.2... 449 BUR 60D ..... 453 BUR 607.2... .. 49) BUR 607) . 2... 388 BUR 608... 2... 449 BUR 608)... .. 488 BUR 806...... 487 BUR 807...... 457 BUS II* 2.2... 460 BUS 1A". 2... 480 BUS IBY... .., 460 BUS I1/4*. 0. 2 463 BUS 11/6"... . . 463 BUS 12" 2... 2. 466 BUS 124"... . 466 BUS 128"... . 466 BUS 124°... 2... 469 BUS 12/6... ... 469 BUS I3* 2.2... 472 BUS I3A*.. . - 472 BUS 1B/A*. 2... 475 BUS 13/5"... 2. 475 BUS 13/6... 2. 475 BUS 19/7*... 2... 478 BUS . 6... + 478 BUS MA... . . 478 BUS 14/4"... + 481 BUS 14/5*. 2... 481 BUS 14/6"... . + 481 BUS 14/7". 2... 481 BUT Mt ...... 48t BUT HAt. 22... 484 BUT 118*... 2. 487 BUT 11/6"... 2. 487 BUTT. 2... 487 BUW 2... 490 BUW 3... 2. 498 BUW Mt... 496 BUW 25* 2.2... 499 PRELIMINARY DATA ,DEX ALFANUMERIC t RS. G% ALPHANUMERICAL INDEX BANEASA s BUW sees 499° OF sees 5896 SDM 401,22... 572 BUW 6"... 502 GT sees. 586 SDM 40I2...... 572 BLX WA... ... 505 GT 1506... ... 556 SDM 401I3...... 572 BUX IA... .. - 508 GT ISO/7#...... 556 SDM4014...... 575 BUX I2A...... SIL GT 150/8*...... 556 SDBM401I5...... 575 BUX 40A...... S14 GT 150/9*..... $56 SDM 4016. ..... 575 BUN 4IA...... 517 GT 150/10»... . 5596 SDM 401I7...... 575 BUX A... 520 GT 2503 ...... 589 SDMSO0OI* ..... 578 BUX 80 ...... 523 GT 250/4...... 559 SDM 500% ..... 578 BUX 80/4... ... 526 GT 2505 ...... 559 SDM 5003" ..... 578 BUX 80/5....... 526 GT 2506 ...... 559 SDM 5004... . 581 BUX 80/6....., 526 GT 2507 ...... 559 SDM 500% ..... SBI BUX 80/7...... 526 GT 2508 ...... 559 SDM S006... .. 581 BUX81 ...... 529 GT 2509... .. - 559 SDM 5010... .. 584 BUX 81)9...... 529 GT 250/10 ..... 559 SDMSOIIY ..... 584 BUX 82 ...... 532 GT 4003... ... 562 SDM SOI... .. 584 BUX 834...... 535 GT 4004... ... 562 SDM SOISS ..... 884 BUX 82/5...... 595 GT 400/65 ...... 562 SDM SOS ..... 587 BUX 82/6...... 535 GT 400/6...... 562 SDMSOIS* ..... 587 BUX 837...... GT 4007... ... 562 SDM S016 ..... 587 BUX 83 1.6... GT 4008... 562 SDM SOIT® ..... 587 BUX 83/9... 0. GT 4009... ... 562 SDT921...... 590 BUX SM 2... GT 400/10 2... 562 SDT 9202...... 580 FT 10... .... 729 SDT 93...... 590 FTQ01....... 761 SDT9204..... + 590 : FT202....... 761 SDT9205...... 590 BUX 86/f* 2... FT 30%... .... 783 SDT 9206...... 590 BUX 86/5" 2... FT 302+ 733 SDT 9207...... 590 FT 303° 733 SDT 9208...... 590 FT 304* 733 SDT 9209...... 590 FSU... .... 736 SDT 920...... 590 BUX 87/9" .. Fr 3... 2... 736 SDT 9301... ... 594 GT 1008"... FT 3I*. 2. 736 SDT 9302...... 594 GT 10/e. FT S14... .. 736 SDT 9303...... 594 GT 100/58". 2... SDM 4001... ... 566 SDT 9304...... 594 GT 1006". 2... SDM 4002... ... 566 SDT 9305...... 594 GT 100/77... 2. SDM 4003... ... 566 SDT 9306...... 594 GT 1007. 2... SDM 4004... ... 569 SDT 9307...... 594 GT 1009". 2... 33 SDM 4005... . 869 SDT 9308...... 594 GT 100/10"... .. 553 SDM 4006... .. 569 SDT 9309...... 594 GT 1503"... ... 556 SDM 4010...... 572 TD162......- 597 *DATE PRELIMINARE _ 10 PRELIMINARY DATAINDEX ALFANUMERIC FANT PRS. rs BANEASA: ALPHANUMERICAL} INDEX TD IGA... - $97 IN M88... 1... 62 2N 9055/5... TD 1@B...... 597 2N 1489... . . 624 ON 3055/6... TDiec ...... 597 2N 90... . . 624 2N 3055/7... 2. TD jl... ... $97 2N1613 ...... 272 2N3055/8...... TDI... .... 601 2N 163A... ... 277 2N 3055/9... . : TDA ...... 601 QNI71 ...... 272 2N 3055/10... TDI6B...... 601 2NI7NA...... 277 2N 3489 ...... TDC... ... 601 2N 2217.2... . 282 2NB40H. 2... TD fl... 2. 601 2N 2218 ...... 286 2N3441 22... TD264....... 605 2N2IBA...... 200 WNBMZ 22. TD 264A ...... 605 2N2219 ...... 286 QNS71 ...... TD264B ...... 605 2N229K...... 290 2N3772 .. TD 26IC ...... 605 ON 2220 ...... 296 2N373 ....~2«. TD 264/12... - 605 2N2221 ...... 900 2N 47 2... TD265....... 608 2N2A...... 30f 2N4MB 2... TD 265A ...... 608 2N 2222 ....,.. 300 2N4957 .... TD 2B ...... 608 2N222A...... 304 2N 4958 .... TD25C ...... 608 2N2368 ...... 311 2N 4959 2... 608 2N 2368S. ..... 315 2N 5020" ...... 612 2N 2369 ...... 319 2N5021"...... 612 2N2369A...... 323 2N5109 ...... 612 2N 2646 ...... 741 2NSIOOA...... 612 2N 2647 ...... 741 2N5100B...... 615 2N 2800 ...... 327 2N bees 615 2N 2891 ...... 327 2N 61S 2N 2004 ...... 331 2N 615 2N 290A... ... 335 2N G18 2N 2905 ...... 381 2N oe 621 2N 290A ...... 335 2N see 618 2N 2006 ...... 339 bee 621 2N 206A... 2... 344 ae 618 2N 2007 2... ee 339 tae 621 2N 207A... ... 344 2N 5575" 2... 618 2N 3054 2... 6. 627 se 621 2N 3055 1... .. 630 . 265 2N 3055H. 2. 630, 268 2N 3055W ... . 630 oe 205 2N 3055/1... 2. . 633 oe 119 2N 3055/2... 633 wee 2N 930... ..... M9 2N 3055/3... ... 633 see QN 1487 2... .. 624 ON 8055/4... 633 2N 5836... 74 *DATE PRELIMINARE. PRELIMINARY DATA 5 uwINDEX ALFANUMERIC ALPHANUMERICAL INDEX 776 660 660 660 663 663 663 666 666 666 669 669 72 675 678 (¢ 687 ON 634A 2... ON 6371 22... 2N 6436A* 2... 2N G437A" 2... ON 64380" 2... ON 6653 2. ee ON 6653A.. 2 2. QN 6653B 6... * DATE PRELIMINARE 12 690 693 696 699 702 702 702 702 779 779 779 779 706 782 709 709 709 2N 6653/1. 2N 6653/2 . 2N 6653/3 2N 6653/4 2N 6654. 26 66544 2N 66548 2N 6654/1 2N 6654/2 2N 6654/3 2N 6654/4 2N 6655 2N 66554 2N 6655B . 2N 6655/1 2N 6655/2 2N 6655/3 2N 6655/4 712 72 nz 712 5 75 m5 m8 718 18 78 721 721 721 724 724 724 724 PRELIMINARY DATATRANZISTOARE CU EFECT DE CIMP FIELD — EFFECT TRANSISTORSTRANZIsTOARE CU SUACTU, OU EFECT DE t CIM, CU JONGTIUNE, CANAL : SILICON N CHANNML FIELD-EFFECT TRANSISTORS ey LORI LIMITA ABSOLUTA OLUTE MAXIMUM RATINGS Voc —-Tensiune drena-poarta 30 Vv Drain-gate voltage Vos Tensiune dren’-sursi +30 Vv Drain-source voltage Ves; Tensiune poarti-surs& —30 v Gate-source voltage Io Curent de poarta 10 mA Gate current Prot Putere totali disipata (Ts < 25°C) 200 mW Total power dissipation Tye ‘Temperatura maxima a joncfiunii 125 °c Maximum junction temperature Ts Domeniul temperaturilor de stocare | —55++150 °C Storage temperature rangeBF 245 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruya _Rezistenfa termic& joncfiune-ambiant | max. 500 °C Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter 7 i Min. Typ. Max.| Unit. — Veonjoss Tensiune de stripungere poart’-surse Gate-source breakdown voltage —Ie =1 pA; Vrs =0 30 v — Tess Curent rezidual poarta-sursi Gate-source cut-off current —Ves= 15 V; Vos = 0 5 nA Inss Curent de drena de saturare Drain saturation current (Q) Vos= 15 V; —Ves=0 BF 245 2 25 | mA BF 245A |2 65 | mA BF 245B | 6 15 | mA BF 245 C [12 25 | mA 2 — Ves ot Tensiune de blocare poarti-sursi Gate-source cut-off voltage Vos= 15 V; Ip = 200 uA BE 245 05 8 |v ! BF 245A | 05 22 |v i BF 245 B | 1.6 38 | Vv ' BF 245C | 3.2 75 |V Ys | Transconductanta directa Forward transconductance Vos= 15 V; —Ves=0;f=1 kHz | 30 | ms Frecventa de taiere | Cut-off frequency (2) Vos=15 V; —Vos=0; 700 MHzBF 245 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru . we Parameter Min. Typ. Max.| Cuit. Cn Capacitate de reactie i 1 | 1 . | Reverse transfer capacitance | 20 V; —Ves=1V; | =1 MHz Ul pF C3 Capacitate de intrare Input capacitance V; —Ves=1 V; 4,0 pF Con Capacitatea de iesire Output capacitance Vos = 20 V; —Ves=1 V; f=1 MHz 1.6 pF Ui) ty/T < 0.02; tp = 300us (2) Frecventa la care partea reali a admitanfel de transfer direct scade cu 3 4B fafé de valoa- rea de la 1 kHz. ‘The frecquency at wich the real part of the forward transconductonce falls by 3 dB rela~ tive to the value at 1 kHz, 2 — Cutelog LP.RS, Déneasa vol. IE ”LPRRS OS BF 247 BANEASA oO Tparzurosgs ov sic, cv mruer Ds 6 ‘IMP, CU JONCTIUNE, CAN) STLICON _N CHANNEL FIELD-RFFECE ‘TRANSISTORS 4 i To92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Voc —-‘Tensiune dren’-poarti +25 v Drain-gate voltage Vos —‘Tensiune dren’-sursi £25 v Drain-source voltage Ves Tensiune poarti-sursi —25 v { Gate-source voltage i Ic Curent de poart& 10 mA Gate current Prot Putere totali disipata (T, < 25°C) 200 mW Total power dissipation Tye Temperatura maxim’ a joncfiunii 125 °c Maximum junction temperature ; Ts Domeniul temperaturilor de stocare | —55-++150 °C \ Storage temperature range 18BF 247 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rusa —_-Rezistenfa termic& joncfiune-ambiant | max. 500 °Crw Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru re. Parameter Min. Typ. Max. | Unit. — Vosnyess Tensiune de strapungere poarta-sursa Gate-source breakdown voltage ~—Ic= 1 pA; Vos=0 30 v — Tess Curent rezidual poarti-sursa Gate-source cut-off current —Ves= 15 V; Vps=0 5] nA Ipss Curent de dreni de saturare Drain saturation current | (1) Vos=15V; —Ves=0 BF 247 10 300 | mA BF 247 A | 30 80 | mA BF 247 B | 60 140} mA; BF 247 C {110 250 | mA | — Vesor Tensiune de blocare poarta-sursa | Gate-source cut-off voltage Vps = 15 V; Ip = 200 pA BF 247 05 wiv} BF 247 A |1,5 4)}Voj BF 247 B |3 7\Vv oo} BF 247 C [5,5 PV | [Yi ! Transconductanfa direct& i ' Forward transconductance ! i Vps= 15 V; —Ves= 0; | \ f=1 kHz 8 17 ms 19BF 247 BANEASA CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Unit. Parametra htin. Typ. Max. few) -“Frecvenfa de tiiere | Cut-off frequency \ | | Q) Vos=15 V; —Vos=0 450 I | | 5 . Ce Capacitatea de reacfie | Reverse transfer capacitance | Vos = 15 V; Ip= 10 mA; f = 1 MHz! 35 | pF | | Cy Capacitatea de intrare Input capacitance Vos= 15 V; Ip=10 mA; f=1 MHz rt pF Cos Capacitatea de iesire Output capacitance = 15 V; Ip= 10 mA; | MHz 5 pF Ds f= tp (1) FE <0.02; tp= 0.9 ms 42) Preevenfa la care partea reald a admitanfei de transfer direct scade cu 3 dB fat de valoa- zea de la 1 kHz. ‘The frequency at wich the real part of the forward transconductance falls by 3 dB relative to the value at 1 kHz, 20TRAVZIsTOaRE ck SILLCIU, OU RPECE DB (CIMP, CU JONCTIUNE, CA SILICON N CHANNEL FIELD-EYFECT TRANSISTORS, 4 ky TOS2 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Voce — Tensiune dren’-poarti +430 Vv Drain-gate voltage Vos Tensiune drend-sursi +30 Vv Drain-sourse voltage Ves Tensiune poarti-sursi —30 v Gate-source voltage Ig Curent de poarti. 10 mA Gate-current Prot Putere totald disipaté (Ty < 25°C) 200 mW Total power dissipation Tyx ‘Temperatura maxima a jonctiunii 125 °c Maximum junction temperature Ts Domeniul temperaturilor de stocare —53-+130 °c Storage temperature range aBF 256 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rusa Rezistenfa termicd joncfiune-ambiant | max, 500 “c/w Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = °C) ELECTRICAL CHARACTERISTICS Parametru . Parameter Min. Typ. Max.| Unit. Viseycs Tensiune de strapungere drena-poarta | Drain-gate breakdown voltage —Io=1 2A; Vos=0 30 v —Iess Curent rezidual poarta-sursi Gate-source cut-off current —Ves=20 V; Vps=0 S| nA Inss Curent de drena de saturare Drain saturation current | (1) Vos = 15V; —Ves = 0 BF 256 3 18 | mA BF 256 A | 3 7 | mA BF 256 B | 6 13 | mA BF 256C |11 18 | mA — Vesot Tensiune de blocare poarta-sursi Gate-source cut-off voltage Vps = 15 V; Ip = 200 pA 05 7\Vv [¥nl Transconductanfa direct& i Forward transconductance 1 Vos = 15 V; —Vos= 0; f= 1KHz| 4,5 ; ms fove) Frecvenfa de taiere ' : Cut-off frequency f \ (2) Vos = 15 V; —Vos = 0 i 1000 | MHz 22LPBRS Dorsnasa BF 256 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru js Parameter Min. Typ. Max. Co Capacitate de iesire Output capacitance Vos = 20V; —Vos = 0 12 pF Co Capacitatea de reactie Reverse transfer cebacitance Vos = 20V; —Vos =1V; f=1MHz 0,7 dF NF Factor de zgomot Noise figure Vos = 10V; R, = 479; f = 800 MHz 15 dB Coe Cistig in putere in montaj poart’- comun’ cu neutralizare Common-gate neutralized insertion power gain Vos =5V; R,=470; f = 800 MHz 4 ab te (1) F< 0,02; t = 0,3 ms (@) Frecventa Ia care partea reali a admitantei de transfer direct scade cu 3 dB fafa de valoa- rea de la 1 kHz. ‘The frequency at wich the real part of the forward transconductance falls by 3 dB rela- tive to the value at 1 kHz,rp. R. s.4 2N 5020, 2N 5021 BANEAS 3. TRANTISTOARE CU SILICIU; CU EFECT DE IMP, CU JONCTIUNE, CANAL F SULICON P CHANNEL FIELD EFFECT ‘TMANSISTORS TOs VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS Veo Tensiune poart’-drend +25V Drain-gate voltage Vos ‘Tensiune dreni—sursi +25 V Drain—source voltage Prot Putere total disipati (T, < 25°C) 250 mW Total power dissipation Tyx ‘Temperatura maxima a jonctiunii 150°C Maximum junction temperature | Ts Domeniul temperaturilor de stocare | —55...+150°C Storage temperature range IMINARE2N 5020, 2N 5021 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rissa Rezistenta termicd joncfiune-ambiant Junction-ambient thermal resistance, max, 355 °C/W CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru | ag | ans Parameter | Min. Typ. Max.) Unit, Visujess Tensiunea de stripungere poarta-sursi Gate-source breakdown voltage Ig = 10 pA; —Vps =0 2N 5020 | 25 v 2N 5021 | 25 iv i Toss Curent rezidual poart’-sursa | Gate-source cut-off current ~Vus =15V; —V¥ps =0 1} nA Vase ‘Tensiumea de blocare poarti-sursi ! Gate-source cut-off voltage iE TOS2 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS i t Veao --‘Tensiune colector-emitor (In=0) 20 vo: Collector-emitter voltage | { Veno _‘Tensiune emitor-bazd (Ice = 0) | 5 vot Emitter-base voltage ! | { Tow Curent maxim de colector i 100 mA Collector peak current \ | | Tew Curent maxim de bez’ { 20 mA | | Base peak curent | ! | Pye > Butere total’ disipat& (1) 300 Total power dissipation ' Tye Temperatura maxima a joncfiunii 159 Ly | Maximum junction temperature ! | Ts Domeniul temperaturilor de stocare —35. ae (1) Terminalele menjiaute pind la 2:m de capsulé la Ty < 25°C At 2 mum from the case the leads kept at Ty < 25°C 3 = Calsiog LPRS, BisBC 170 CARACTERISTICL TERMICE THERMAL CHARACTERISTICS | Ruy-4 — Rezistenfa termic& joncfiune-ambiant | - 4 Junction-ambient thermal resistance mas CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter ‘Min. Typ. Max. Unit. Toso Curent rezidual colector-bazi Collector-base cut-off current Ve=15V Texo Curent rezidual colector-emitor Collcctor-emitter cut-off current Ve = 1V Verjcxo ‘Tensinne de stripungere colector- emitor Collector-emitter breakdown voltage () Ic =2mA Vieyeso ‘Tensiune de stripungere emitor-bazi Emitter-base breakdown voltage Tp = 1 pA Tensiune de saturatie colector-emitor Collector-emitter saturation voltage Tc = 30 mA; Ip = 3 mA 400 | mV Factor de amplificare in curent | continuu D.C. forward current transfer ratio | i | 20 \ Vv a < Ies=1mA; Ven =1V gre A 35 100) — gr B | 80 250 — | . gr C | 200 ooo | fr Frecvenja de tranzif j Gain bandwidth product | \ Ie = 10 mA; Ven=5V; i= 100 MHz » 250 MHz Ceno Capacitate colector-ba ' Collector-base capacitance | Veo = 10 V; f = 1 MHz (2) tyiT < 0.02; tp = 0,3 msBC 171, BC 172 BC 173, BC 174 ‘TRANZISTOARE. CU NPN PLANAR, EPITAXIALE DE AUDIOPBECVENTA MOON NPS EPITAXIAL PLANAR AF THANSISTORS TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BC BC BC BC 171. 172 «173 «174 Veo‘ Tensiune colector-emitor (Ip = 0) ier 25V 25V GiV | Collector-emitter voltage Storage temperature range * Vano -‘ Tensiune emitor-bazA (Ie = 0) 6v 5V 5V BV Emitter-base voltage Tow Curent de colector ds virf 100 mA Collector peak current | Tow Curent maxim de baz 20 mA Base peak current Prot Putere total disipat% (1) 300 mW Total power dissipation Tre ‘Temperatura maxima a joncfiunii | 150 °C Maximum junction temperature Ts Domeniul temperaturilor de stocare | —55++ 150°C (1) Terminalele menfinute pind la 2 mm de capsula la Ty < 25°C At 2mm from the case the leads kept at Ty < 25°CBC 171, BC 172 BC 173, BC 174 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ray-a _,. Rezistenfa termicd joncfiune-ambiant ° Junction-ambient thermal resistance | mas. 420 °C/W CARACTERISTICI ELECTRICE (T,, = 25°C) ELECTRICAL CHARACTERISTICS Parametru | an, , Parameter Min. Typ. Max.) Unit. Toxo Curent rezidual colector-emitor \ Collector-emitter cut-off current | Ve=15V 12] Tees Curent rezidual colector-emitter i Collector-emitter cut-off current Vee = 30V; Vir=0 BC 172 15 | nA BC 173 15 | nA BC 171 15 | nA i BC 174 15, | nA Visrjczo Tensiune de strapungere colector- { emitor i Collector-emitter breakdown voltage ' (2) Te =2mA BC 171 | 45 |v BC 172 25 Lv BC 173 | 25 iv BC 174 64 Vv Veewnvo Tensiune de strépungere emitor-bezd Emitter-base breakdown voltage | Te =] uA BC 171 | 6 v BC 172 5 iv BC 173 | 5 |v BC 174 | 5 iv Verut —Tensitne de saturafie colector-emitor ; Collector-emitter saturation voltage (2) Ie=10mA, Ip=05 mA 02] Vv 2) Ic = 100 mA, Ip = 5mA 0.6|VBC 171, BC 172 BC 173, BC 174 CARACTERISTIC! ELECTRICE (T,= 25°C) « ELECTRICAL CHARACTERISTICS (cont.) Parametra i Tae Parameter Min, Typ. Max. _ ps | Varet Tensiune de saturatie bezé-cmitor | pe emitter saturation voltage ' = 100 mA; Ip = 5 mA ' 1,03 V | hee Factor de amplificare in curent i | continuu | ! D.C. forward current transfer ratio | | To=10pA; Vn=5V gr. | 49 - gr. 3 | 100 Doe eC | i - | (2) Jo=2mA;Ve=5V gr A | 120 220. — gr. B | 180 4601 — gC | 380 800; -- | te Factor de amplificare in curent ; i alternativ i | ‘AC forward current transfer ratio | Ie =2mA; Ver =5V;f=1kHz ! i aA | 125 260; — ! gr. B | 240 500 | — gr. c 450 900 | — 1 log Frecventa de tranzifie : : i Gain bandwidth product i Vee = 5 V; Ic = 10 mA, : : fp = 100 MHz 250 | Mere ' Ccno —Capacitate colector-bazi i : Collector-base capacitance j Ves = 10 V; f= 1 MHz | 6| pF 37BC 171, BC 172 LP RS gy BC 173, BC 174 pAnmasa QPS CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru Parameter Min, Typ. Max.| Unit. NF Factor de zgomot Noise figure i To = 0.2 md, Veg kQ, * 4) 4B | | 0,2 mA, Ver =5V, BC 171 10} 4B | | ako, f=1kHz © BC 172 10 | dB | ‘2008 BC 174 10 | dB | 2 22 0,02; ty 0.3 @) $0.02; tp = 0.5 msTRANZISTOARE CU SILICIU PNP PLANAR: EPITAXIALE DE JOASA’ FRECVENTA SILICON PNP EPITAXIAL PLANAR AF TRANSISTONS BC 177, BC 178 BC 179 t rn ou f TOLS VALORI LIMITA ABSOLUTA BC OBC) OBC ABSOLUTE MAXIMUM RATINGS 177,—«:178—179 —Veno —Tensiune colector-bazi (—In=0) 50V 30V 25V Collector-base voltage i —Vezo — Tensiune colector-emitor (—In= 0) [45V 25V 20V , Collector-emitter voltage ! —Veno —‘Tensiune emitor-bazi (—I¢ = 0) | 3V | Emitter-base woltage | | —Te Curent de colector 300 mA : | Collector current | ) —Tar Curent maxim de colector 200 mA 1 Collector peak current —Is Curent de baz 50 mA | Base current | | Peet Putere total disipata (T,<25°C) | 300 mW | | Total power dissipation | Ty Temperatura maxim’ a joncfiunii 175 °C ! Maximum junction temperature | Ts Domeniul temperaturilor de stocare | —S5+175°C | Storage temperature rangeBC 177, BC 178 BC 179 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ray-a — Rezistenfa termic& joncfiune-ambiant ' | 00 °C/W | Junction-ambient thermal resistance | Ruse Rezistenfa termici joncfiune-capsuld max. 200 °C/W | Junction-case thermal resistance | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS ' parametra Min. Typ. Max} Unit. —_ — | i —Teso Curent rezidual colector-baza i ‘ Collector-base cut-off -current | —Vea = 20V 10. nA Ves = 20V; Ta = 150°C | 4) uA | —Veaycno Tensiune de strapungere colector-bazi i Collector-base breakdown voltage | Io = 10 pA BC 177 | 50 v BC 178 | 30 ¥ BC 179 | 25 Vv Vinayceo iune de stripangere colector- i ter breakdown voltage | | | i () 7 - BO 177 Vv ! : BC 178 iv BC 179 iv ) —Visgjezo Tensiune de stripungese emitor-bazi | i Emitter-base breakdown voltage | —Ie=1pA 5 v 40BC 177, BC 178 BC 179 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru Min. Typ. Max.) Unit. —Vemat Tensiuine de saturafie colector-emitor Collector-emitter saturation voltage (1) Te = 10 mA; 200; mv (1) —Ip = 100 ma; | 950 | mv Veron Tensiune bazi-emitor i Base-emitter voltage | (Q) —Vex =5V; —Ig = 2mA 700; mV | bre Factor de amplificare in curent { ' ‘ continu i : DC forward current transfer ratio { Ie = 10 pA; —Vee = 5V : gr A | 40 - i gr. B | 100 - gr. C | 100 Lo Ie =2mA; —Vee=5V gr. VI 70 130 | - gr. A | 120 220) = gr. B | 180 460; — , gr. C | 380 800; — | \ oft Frecvenfa de tranzitie i i Gain bandwidth product i | —Ver = 5V; —Ic = 10 mA; ! ! | f = 100 MHz | 130 i : Coso —-Capacitate colector-bazi i : Collector-base capacitance | | —Ves = 10 V; f = 1 MHz 7\pF NF Factor de zgomot | : | factor i Ie = 200 pA; | | f=1kHz ~ BC 177 | 10 | dB BC 178 10!dB 5.V; —Ic = 200 pA; i j Rp 22k; $230 He. 15 ee | | BC 179 4; qB | () IT < 0,02; t) = 0,3 msBC 177, BC 178 BC 179 CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS Parametru Unit. j Parameter Trp. Max, i 7 i Montaj in emitor comun i | i Common emitter configuration | \ | ~Ip=2mA; — Ven =5V: ! ! f=1kHz bee Rezistenfa de intrare | Short circuit input resistance ' gr. 2,2 | k2 i gr A te 45 | kQ i gr. B | 32 85 | kO | gc |6 15 | kQ 1 Boe Conductanja de iesire i Open circuit output conductance / gr. VI 40 | pS gr A 50 | uS gr. B 70 | pS gr. Cc 180 BS bye Factor de amplificare in curent alternativ | AC. forward current transfer ratio | gr. VI. | 75 150 | — | gr A | 125 260) — ! gr. B 240 500 | - | gr. C 450 900! — | a2BC 177, BC 178 BC 179 i 8 e 2} Putere totala disipata ‘Total power dissipation Ruy-a Fark radiator (Without heat sink) RujJ-c Cu radiator infinit (With infinite heat sink)BC 250 TRANZISTOARE CU SILICIU PNP PLANAR RPITAXIALE DE AUDIOFRECVENTS SILICON PNP EPITANIAL PLANAR AF ‘TRANSISTORS Storage temperature range To92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS | —Vcxo} ; Tensiune colector-emitor (—Ig = 0) 20V Collector-emitter voltage —Viso ‘Tensiune emitor-bazi (—Ie = 0) 4v Emitter-base voltage | Tex Curent de colector de virf 100 mA Collector peak current —Inu Curent maxim de bazd 20 mA | Maximum base current Poot Putere total’ disipat’ (1) 200 mW. Total power dissipation Pe ore ‘Temperatura maxim’ a jonefiunii 150 °C Maximum junction temperature | | ~55-+4150°C | Ts Domeniul temperaturilor de stocare (1) Terminatele menfinute pind la 2 mun de capsuld la Ty < 25°C At 2mm from the case the leads kept at Ty < 25°C ryCARACTERISTICI TERMICE ' THERMAL CHARACTERISTICS BC 250 Ray-a — Rezistenfa termic& joncfiune-ambiant Junction-ambient thermal resistance max. 420 °C/W CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS } Parametru i Parameter Min. Typ. Max} Unit. j + eae Curent rezidual colector-emitor | Collector-emitter cut-off current Vee = 15V i Collector-base cut-off current} ! —Ves = 15 V ] | —Icso Curent rezidual colector-baza | —Viaxjcgo Tensiune de stripungere colector- | i emitor | Collector-emitter breakdown voltage | (2) —Te = 2mA | —Veoajgno Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage —Iz = 100 nA —Veust Tensiune de saturafie colector-emitor Collector-emitter saturation voltage —Ie = 10 mA, —Ip = 1 mA | —Vorut Tensiune de saturafie bazi-emitor Base-emitter saturation voltage Ip = 10 mA, —Ip = 1_mA 20EP RD BAnEasA WS CATACTERISTIC] ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS P: parametra |stin. Typ. Max.| Unit. { hye Factor de amplificare in curent continuu | DC forward current transfer ratio | —Te=1mA,—Ve=1V gra 35 10} — gr B 80 250 | — gr. Cc 200 600} — fy Frecvenfa de tranzifie Gain bandwidth product Vee = 5V, ~Ie = 10 mA, f= 100 MHz 250 MHz ty (2) FE S02 ty = 0.8 msoe. P. R. &, BC 251, BC 252 fd BANEASA BC 253, BC 256 TRANZISTOARE CU_ SILC PNP PLANAR EPITAXIALE DE AUDIOPRECVENTA SULICON PNP EPITAXIAL PLANAR AF TRANSISTORS «ey T0932 VALORI LIMITA ABSOLUTA BC BC BC BC ABSOLUTE JMAXIMUM RATINGS 251) 252 253 254 — Veeo Tensiune colector-emitor (—I = 0) 45.V 25V 25V 64V Collector-emitter voltage | — Veso Tensiune emitor-bazi (—Ic = 0) 4Vv Emitter-base voltage i Collector peak current — Tnx Curent maxim de bazi Base peak current Pwr Putere totala disipata (1) Total power dissipation — ex Curent de colector de virf 100 mA { | 300 mW i Tye Temperatura maxima a joucfiunii Maximum junction temperature 150 °C Ts Domeniul temperaturilor de stocare —55+ +150 °C Storage temperature range | | = | | | (1) Terminalele mentinute pind la 2mm de la capsuld la Ty < 25°C At 2 mm from the case the leads kept at Ty < 25°C a7BC 251, BC 252 L P. R..S. BC 253, BC 256 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ruyoa Rezistenfa termica joncfiunc-ambiant a0 ce | Junction-ambient thermal resistance max. 420 °C/W CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru ! Parameter Min. Typ. Max.| Unit. f — Iceo Curent rezidual colector-emitor Collector-emitter cut-off current ver = 15V 12} pa — Tens Curent rezidual colector-emitor Collector-emitter cut-off current —Veg = 25V; —Var =0 BC 252 15 | nA BC 253 15 | nA —Ver = 45V; —Var =0 BC 251 15 | nA —Vez = 64V; —Vez =0 BC 256 15} nA | — Veryro Tensiune de stripungere colector- emitor | Collector-emitter breakdown voltage ; \ (2) -Ie=2mA BC 2 45 iv ! BC 252, BC 233 25 iv i BC 256 | 64 1v — Viexeno Tensiune de strapungere emitor-baz ' Emitter-base breakdown voltage I | Ig = 100 nA 4 \v Tensiune de saturafie colector-emitor Collector-emitter saturation voltage Ie = 10 mA; —Ip = 1 mA 03] Vv 17 Veust Tensiune de saturatie buzii-emitor L Base-emitter saturation voitage Ic = 10 mA, —Ip = 1 mA 09] Vv 48CARACTERISTIC! ELECTRICE (T, = ELECTRICAL CHARACTERISTIC 25°C) BC 251, BC 252 BC 253, BC 256 (cont.} Parametru | atin. Typ. Max. Cait. | 1 | } hre Factor de amplificare in curent | i : continu, I i DC forward current transfer ratio i Ice = 10 pA; —Vee =5V gr. A | 40 De gr. Bj 100 7 ger. C | 100 j;- 4 —Ie=2mA; —Vee =5V gra | 120 29 | 2 gr. B 180 460; — | er. C | 380 800} — Bee Factor de amplificare in curent | alternativ ' AC forward current transfer ratio | ! Ie = 2mA; —Ves =5V; | i f=1kHz gr. A | 125 260) — gr. B | 240 500 | — gr. C 450 90) — fp Freevenja de tranzifie | bandwidth product i Vex = 5V; Ie = 10 mA; i i i f = 100 MHz 250 | MHz NE Factor de zgomot | | i | j 4\ 4B | \ | 10 | GBBC 261, BC 262 LPR. Ss. BC 263, BC 266 awnasa (BD THANAISTOADE CU 8H EPITAXIALE DE JoAs) SULICON PMP EPITAXIAL PLANAR AP ‘TRANSISTORS E £ : TO18 VALORI LIMITA ABSOLUTA BC BC BC BC ABSOLUTE MAXIMUM RATINGS 261 «262 263 266 Collector-base voltage — Vceo Tensiune colector-emitor (—Ip = 0) 45 V 25 V 20V 64V Collector-emitter voltage | — Veno Tensiune colector-bazi (—Ig = 0) 50 V 30V 25V 70V i | | Enmitter-base voltage | . : . \ — Vexo Tensiune emitor-bazi (—Ie = 0)J — Ie Curent de colector 100 mA Collector current | — Jee Curent maxim de colector ! 200 mA | Collector peak current | | | _ ty Curent de bazi gj soma | | Base current | 1 | Pyot Putere total disipaté (Ta < 25°C) | 300 mW ' { Total power dissipation i | Tre Temperatura maxima a joncfiunii 175 °C | Maximum junction temperature | Ts Domeniul temperaturilor de stocare —55+4175 °C i Storage temperatureBC 261, BC 262 BC 263, BC 266 CARACTERISTICI TERMICE } THERMAL CHARACTERISTICS Sean sae me |, Ruy-a Rezistenfa termic& joncfiune-ambiant max. 500°C/W Junction-ambient thermal resistance Ruy-c Rezistenfa termic& joncfiune-capsuld max. 200°C/W Junction-case thermal resistance | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS { Parametra Min, Typ. Max.) Unit. —Icso Curent rezidual colector-baza Collector-base cut-off current — Ven = 20 V 10 | nA = Ven = 20 V; T, = 150°C 4] pA —Veaneno ‘Tensiune de stripungere colector-bazé Collector-base breakdown voltage —I¢=10 pA BC 261 Vv BC 262 v BC 263 25 Vv BC 266 | 70 v —Vsnycro Tensiune de strapungere colector- emitor Collector-emitter breakdown voltage | (I) — Ie =2 mA BC 261 | 45 Vv BC 262 | 25 v BC 263 | 20 Vv BC 266 64 Vv | 51BC 261, BC 262 BC 263, BC 266 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) \ | | = Venajes0 | | | | — Versat fr Pacametru Parameter \ ‘Tensiune de strapungere emitor-baz& Emitter-base breakdown voltage —Ig=l pa Tensiune de saturafie colector-emitor Collector-emitter saturation voltage 10 mA; — Ip=0,5 mA —Ic= 100 mA; — Ip=5 mA ‘Tensiune baza-emitor Base-emitter voltage — Ve=5V;—Ip=2 mA Factor de amplificare in curent continuu DC forward current transfer ratio —Te=10 uA; — Ven=5 V gre gr. B — Ic =2 mA; — Ve=5 V RAR Ours Frecventa"de tranzifie Gain bandwidth product Voz=5V; — Ie =10 mA; f= 100 MHz | 7 Min. Typ. Max.| Unit. 40 100 70 120 380 | 1 | v i | 200 | mv 950 | mV 700 | mv I { 130) — 220 | — 460} — 800 | — I MHz © Gt < 002; 52 tp = 0,3 msBC 261, BC 262 BC 263, BC 266 CARACTERISTICI ELECTRICE '(T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametru - ; Parameter Min. Typ. Max.) Unit. Cepo Capacitate colector-bazi | Collector-base capacitance — Ves= 10 V; f=1 MHz 7| pF Noise figure 1 — Vee=5 Vi — Io = 200 pA ; BC 261 10 | dB BC 262 10 | dB BC 266 10 | 4B 200 pA; BC 263 4/ 4B | | | | | | NE Factor de zgomot | | | | | | | CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS i i Parametri Min, Typ. Mas, Unit, | - a Montaj in emitor comun | Common emitter configuration i = Te=2 mA; — Vee=5 V; { f=1 kHz bie Rezistenta de intrare Short circuit input resistance ge. vi | 04 22] &Q eA | 12 45|kO s.B | 32 85| Ko gc | 6 15 | kQ 53BC 261, BC 262 BC 263, BC 266 CARACTERISTICI DE CUADRUPOL TWO PORT CHARACTERISTICS 1. P. RS. ‘B / (cont.) i Parametra | tin. typ. Max Wit Bee Conductanta de iesire Open circuit output conductance gr. VI 40 | Ss er A 50 | uS gr. B 70 | us gr. c 150 | pS bee Factor de amplificare in curent alternativ AC. forward current transfer ratio gr. VI gr gr. B gr. Cc vi} 150} — 125 260) — 240 500; — 450 900]; — Putere total disipata Total power dissipation ‘0, are Rij-a Para radiator (Without keat sink) Riuj—c Cu radiator infinit (With infimite heat sink)Pe PR. 2 BANEASA TRANZisToARE. CU SILICLU ENP PLANAR BPITAXIALE DE AUDIOFRECVENTA SULACON PYF RPITAXIAL PLANAR AP ‘TRANSISTORS VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS — Vers Tensiune colector-emitor (—Vaz = 0) Collector emitter voltage — Vezo — Tensiune colector-emitor (— / Collector-emitter voltage | — Vino ‘Tensiune emitor-bazi (— Ie = 0) Emitter-base voltage — Ic Curent de colector Collector current — Tee Curent de colector de virf Collector peak current —Is Curent de baz’ Base current Prot Putere totala disipata (1) | ‘Total power dissipation Ty Temperatura maxima a joncfiunii i Maximum junction temperature Ts Domeniul temperaturilor de stocare Storage temperature range BC 327, BC 328 a a TO92 BC 327 BC 328 50V 30V 45V 20V 5V 800 mA 1A 100 mA 625 mW 150°C —55++150°C (1) Terminalele menfinute pind la 2mm de Ja capsuli la Ty < 25°C At 2mm from the case the leads kept at T, < 25°C 35BC 327, BC 328 CARACTERISTICE TERMICE THERMAL CHARACTERISTICS Rey-a_ Rezistent& termic& joncfiune-ambiant (1) Junction-ambient thermal resistance Ray-a RezistenfA termicd joncfiune-ambiant cu radiator de cupru 10x 10mm x 3um Junction-ambient thermal resistance with copper cooling area Ruse Rezistenfa termic jonctiune-capsula Junction-case thermal resistance max. 250 max. 90 “cw °Ciw °cyw CARACTERISTICE ELECTRICE (T,= 25°C) ELECTRICAL CHARACTERISTICS Parametru Parameter — Ices Curent rezidual colector-emitor Collector-emitter cut-off current — Vee V; —Vaz=0 BC 327 — Vee = 25 V; —Vug=0 BC 328 — Veenjces Tensiune de stripungere colector- emitor Collector-emitter breakdown voltage Io = 0,1A; —Vaz=0 BC 327 BC 328 — Vierjceo Tensiune de strépungere colector- emitor Coliector-emitter breakdown voltag> —Ic= 10 mA BC 327 BC 328 56 Min. Typ. 8s 45 20 Max, Unit. 100 | nA 100 | nA | ly iv ivhPL B.S. BANEASA CARACTERISTICI ELECTRICE (T, ELECTRICAL CHARACTERISTICS (cont.) Parametru la rT Parameter | Min. Typ. Max, U | | i —Vosgyao Tensiune de stripungere emitor-baz: Emitter-base breakdown voltage — In = 100 pA Be Vv 1 —Verut Tensiune de saturafic colector-emitor + Collector-emitter saturation voltage | (2) ~ Ie =500 mA; ~ Ip =50 mA | 700 \ Vien Tensiune bazi-emitor Base-emitter voltage (2) — Vez = 1 V; — Ic = 300 mA bre Factor de amplificare in curent | continuu ! DC forward current transfer ratio | i ! :— % Var =0 BC 338 | 100 | na Vearexs Tensiune de strapungere colector- | | | emitor | | Collector-emitter breadkown voltage | | tos O1 mA; Vis =O BC 337 | 50 /¥ BC 338 | 30 lv Veoneno ‘Tousiume de strépungere colector- | i emitor \ i Collector-cmitter breakdown voltage (2) To = 10 mA BC 337 | 45 ms ] BC 338 | 20 lv | Vigayaso ‘Teusiune de strapungere emitor-bazi | i Emitter-base breakdown voltage | Tr = 100 pA i 3 vBC 337, BC 338 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametra | Min. Typ. Mas.’ Unit Verut ‘Tensiune de saturatie colector-emitor Collector-emitter saturation voitage (2) To = 500 mA; Ip = 50 mA 700 | i mV ! | Varo ‘Tensiune bazi-emitor | Base-emitter voltage i (2) Ver =1 V; Ie = 300 mA | Liv bre, Fa | continuu D.C. forward current transfer ratio | { | ctor de amplificare in curent (2) v 1 V; Ie = 300 mA (2) Ve 100 250 160 400 250 630 1ViIc=100 mA gr. 16 gr. 25 gr. 40 fp Freeventa de tranzifie 4 Gain bandwidth product Ven =5 Vi Ie= 10 mA; £=50 MHz 100 | MEz Cozo Capacitate colector-baz& } Coilector-base capacitance Ven = 10 V; 1 MHz | 12 | pF 2) *2 <0,02; tp =0,3mns TBC 413, BC 414 ‘ZGOMOT REDU na ‘REDUS, DE SILICON NPN. AP TEANSIS! x ‘AXIAL PLANAR LOW NOISE Tose VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BC 413° BC 414 Vezo Tensiune colector-bazi (Iz = 0) 45V. 50V | Collector-base voltage Veeo -Tensiune colector-emitor (Ip=0) | 30V 45V | Collector-emitter voltage Vazo —- Tensiune emitor-bazi (Ic = 0) 5V Emitter-base voltage Tet Curent de colector de viri | 100 mA i Collector peak current i | Jou Curent de baz& | 20 mA | Base current i | Prot Putere total disipat& (1) | 300 mW Total power dissipation | The ‘Temperatura maxim a jonctiunii | 150°C j Maximum junction temperature | Ts Domeniul temperaturilor de stocare —5524150°C | Storage temperature range (1) Terminalele mentinute pind la 2mm de cepsuli la Ty < 25°C At 2 mm from the case the leads kept at Ty < 25°C erI Pp. B.S. BC 413, BC 414 © BANEASA CARACTERISTICI TERMICE THERMAL CHARACTERISTICS | Rusa Rezistenfa termici joncfiune-ambiant max. 420 *C/W Junction-ambient thermal resistance CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru n ; Parameter Min. Typ. Max. | Unit. Tero Curent rezidual colector-bazi Collector base cut-off current Veo = 30 V 15 | nA Tes Curent rezidual emitor-bazi Emitter base cut-off current Ves=4V 15 | nA Vesnjeno Tensiune de stripungere colector-bazi Collector-base breakdown voltage =10 pA BC 413 | 45 Vv BC 414 | 50 Vv Visrcco Tensiune de stripungere colector- emitor Collector-emitter breakdown voltage (2) Io = 10 mA BC 413 | 30 v BC 414 | 45 Vv Veeryeso Tensiune de strapungere emitor-bazi Emitter-base breakdown voltage Te = 10 pA 5 vTA oo 8. Ws ninznsa, CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHA RACTERISTICS Parametru Parameter Vorsat rg fr Tensiune de saturafie colector-emitor Collector- emitter saturation voltage | Tensiune de saturatie bazi-emitor Base-emitter saturation voltage Ie= 10 mA; Ip = 0,5 mA Je = 100 mA; I, =5 i mA 9 Factor de amplificare in curent continua DC forward current transfer ratio = 10 pA; Ven=5 V gt. Et. gr. Te =2 mA; Ver=5 V ee gr. gr. Factor de amplificare in curent alternativ ‘AC forward current transfer ratio | Ve=5 Vi le=2 kHz gr A | Ow OmE Frecvenfa de tranzifie { Gain bandwidth product \ 5 V; Ic= 10 mA; | i is 100 MHz | | 250 mv | | i 600 | mv [mv | mv | | | : i fo 209 | - | iS | i | | f \ i | ! 260: — | 500 | = 90; -— | i MHz6C 413, BC 414 CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS (cont.) Parametra . a | Pactee [tin Typ. Max. Unit. | Cono Capacitate colector-bazi | | Collector-base capacitance | | Ves = 10 V; f= 1 MHz | 25 | pF NE Factor de zgomot | | Noise figure | | 5-V; To = 200 pA; ;i=30 Hz +15 KHz 3| 4B | Ve Tensiune de zgomot la intrare | | ! Noise voltage at transistor input | | | Von =5 Vi Je = 200 pA; | ! R, =2 KQ; f = 10+50 Hz | 0,185} uv tv | frerau Trece -panod \VourMe i, 1. #{ano-PASs FILTER AF NOLIMETER J | L seve Circuit de test pentru: Vo ‘Test cirenit for * Reactie neg Negative fe pentra amplificare de tensiune constant& back for a constant voltage amplificationAUDIO-PRECYE SILICON PNP. AD THANSTST OARE CU SILICIT PNP PLANGS Eriectiaues fou, OMOT REDUS, DE AXIAL PLANAR LOW NOISE BC 415, BC 416 TO92 VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BE 415 BC 416 — Veso Tensiune colector-bazi (~In = 0) | 45V 50V Collector-base voltage ! — Vero ‘Tensiune colector-emitor (— Ip = 0) | 30 V 45 Collector-emitter voltage | — Veno ‘Tensiune emitor bazi (~Ie=0) | 5Vv Emitter-base voltage | j — Tce Curent de colector de virf { 100 mA Collector peak current | | — Is Curent maxim de baza | 20 mA j Base peak current | Prot Putere total disipata (1) ' 300 mw | Total power dissipation | | Tye Temperatura maxim’ a joncfiunii | 150°C | Maximum junction temperature | i Ts Domeniul temperaturilor de stocare | =+150°C i Storage temperature range (1) Terminalele mentinute pint 12 2mm de capsulé la T, < 25°C At 2mm from the case the leads kept at Ty < 25°C vol. UtBC 415, BC 416 CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Ray-a — Rezistenfa termic& joncfiune-ambiant | max. 420 °C/W | | | Junction-ambient thermal resistance | CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS { Parameter |atin. Typ. Max.) Unit. | Parametru j ; i —Ixno Curent rezidual colector-bazi | | Collector-base cut-off current | — Ves = 30 V 15 nA | | - . | —Ixzo Curent rezidual emitor-baza i Emitter-base cut-off current 15) nA — Vee= 4V —Vipxso Tensiune de strapungere colector-baza Collector-base breakdown voltage —Ic=10 pA BC 415 BC 416 ; | —Vinnjcxo Tensiune de stripungere colector- | t I 100ka, (2} Circuit de masuré pentru ton, toff Test circuit for a) Te! Tm Tng & — 102 <1: 1 mA R= R, = 5kO, Ry = 9909, Vaz = 3,6 V b) To: — Tmt Ing & — 100: —10:10 mA. R, = 550 2, Ry = 7000 Ry, = 98.0, Vaz = 5V 6GALPRS id BANEASA TRANZISTOARE CC SILAGE NPY PLAN UE RPITAMTALE DE INGLTA THNSIU SE SILICON NPN EPITAXIAL VOUTLGH TRANSISTORS: LANAR ci lt VALORI LIMITA ABSOLUTA ABSOLUTE MAXIMUM RATINGS BF 258, BF 259 BF 257, BF 257E 1039 Veno —Tensiune colector-baz (Iz ~ 0) Collector-base voltage Veeu ‘Teusiune colector-emitor (Ip Collector-emitter voltage ‘Lensiune emitor-bazi (Ze == 0) Emitter-base voltage Collector ent Pos Vetere total disipata (T. < ‘Total power dissipation Ty ‘Temperatura maxima a joncfiunii Maximum junction temperature ts Domeniul temperaturilor de stocare Storage temperature rai | | Te Curent de colector i 160V 2000) IGOY 200 250\ i 300V" SHOW | | | 7 — Catalog LP.RS. Binevsa vol. IL 7BF 257, BF 257E BF 258, BF 259 LPRSY BANEASA OJ CARACTERISTICI TERMICE THERMAL CHARACTERISTICS Rus-C Rezistenfa termica joncfiune-capsula | | | Junction-case thermal resistance | ! CARACTERISTICI ELECTRICE (T, = 25°C) ELECTRICAL CHARACTERISTICS Parametru | ane ign | Parameter Min. Typ. Max.) Unit. | | Teso Curent rezidual colector-baz’ | ' Collector-base cut-off current i | Ves = 100 V BF 257 50 | nA BF 257E 50 | nA i BF 258 | 50 | nA BF 259 | 50 | nA | Veryno Tensiune de strapungere colector-bazi | | Collector-base breakdown voltage { Te = 100 pA BF 257 | 160 iv BF 257 E | 210 Vv BF 258 | 250 iv i BF 259 | 300 iv | Vanjero Tensiune de strapungere colector- | ‘ emitor : 1 | Collector-emitter breakdown voltage (Q) Ie 10 mA BF 257 | 160 iv ! BF 257E, | 210 v } BF 258 | 250 Vv BE 259; 300 v wo <®. PRS, BF 257, BF 257E O Anmasa BF 258, BF 259 CARACTERISTICI ELECTRICE (T,= 25°C) ELECTRICAL {CHARACTERISTICS (cont.) Parametru Parameter | Min. Typ. Mas.’ Unit. Vensat Tensiune de saturafie colector-emitor | Hl Collector-emitter saturation voltage | | Te = 30 mA; Ip = 6mA | ly hes Factor de amplificare in curent : continuu j DC forward current transfer ratio | (1) Ver = 10 V; Te = 30 mA i fr Frecventa de tranzific | | | Gain bandwidth product | =10V; Ie = 10 mA; } | {= 20 MHz , 50 90 | ane Ce Capacitate de reactie | | Feedback capacitance | =10V; f=1MHz 42 pE | | | | | Coso Capacitate colector-bazi Collector-base capacitance Ves = 30V; f = 1 MHz t a) : < 0,02; tp= 0,3 ms Puterea totala dispation t Total power dissiipatd a Rygy—a Pied radiator (Without heat sink) tha Rygy—c Cu radiator infinit o 0 | (With infinite heat sink) leaBF 257, BF 257E BF 258, BF 259 Neg IV il de funcfionare admis rating area T Veg lv! Caracteristici de iesire Outpat characteristizs 300