Proceedings of Asia-Pacific Microwave Conference 2007
Novel Beam Design for Compact RF MEMS Series
Switches
King Yuk (Eric) Chan'2, Mojgan Daneshmand2, Raafat R. Mansour2, Rodica Ramer'
'School of Electrical and Telecommunications Engineering, University of New South Wales, Sydney, NSW, Australia
2Center of Integrated RF Engineering (CIRFE), University of Waterloo, Ontario, Canada
Abstract- This paper presents two novel integrated RF MEMS
series contact switches for broadband applications. The proposed
designs are based on cantilever and clamped-clamped beams that
can be easily integrated in large multi-port structures. A novel set
of dimples are integrated in the cantilever type switch to prevent
the unwanted warpage of the beam resulting from the residual
stress of the fabrication process. The switches are fabricated
using a metal based six-mask process. The results illustrate
smooth beams with excellent RF performance. The cantilever
beam switch shows an actuation voltage of 60V with better than a
0.35dB insertion loss and a 24dB return loss up to 40GHz. The
isolation of the switch is 22dB for all the frequency band of
interest. The clamped-clamped beam switch results are also
presented indicating enhanced isolation of 26dB up to 40GHz
with 0.5dB insertion loss.
Keywords- RF MEMS, MEMS, switch, dc contact, high
isolation, widebandt
I. INTRODUCTION
RF, microwave and millimetre wave switch networks are
widely used in everyday communication systems such as
wireless, satellite payloads and base stations. They enable
flexible interconnections between various ports and channels
by managing signal routing and more importantly they
optimize the usage of bandwidth [1]. Mechanical switches and
semiconductor switches are being employed in switching
systems conventionally. The most commonly employed
mechanical switch is the coaxial switch while PIN diodes and
FET transistors are the most widely used semiconductor
switches. Mechanical switches offer advantages in providing
excellent RF performance. However, they are bulky and
expensive compared with their semiconductor counterparts. In
recent years, due to revolutionary development in Micro-
Electro-Mechanical Systems (MEMS) switches, they are being
employed for different RF/Microwave applications. RF MEMS
switches are becoming some of the most promising candidates,
as they combine the low loss advantages of mechanical and the
small size features of semiconductor switches [2].
Although RF MEMS switches have been intensively
studied, very limited work has been focused on large switching
networks. One of the existing problem in large switching
structures such as switch matrices, multi-bit phase shifters [3-
5], is the switch yield and their dependency to the residual
stress of the fabrication process across one wafer. This could
result in malfunctioning of some of the beams and thus the
entire system. This problem is much more pronounced on
cantilever type switch networks as the switch deforms to the
curled shape and prevents the switch from turning ON. Here, in
this paper we propose to use novel sets of dimples to reduce the
stress sensitivity of the beams locally and directionally. This
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eliminates the beam shape dependency to the residual stress
variation across the wafer and therefore prevents the unwanted
warpage.
II. SWITCH DESIGN AND FABRICATION
Due to the advantages of coplanar waveguide (CPW) over
microstrip line such as lower coupling to adjacent signal lines,
smaller radiation loss at discontinuity [6] and backside
conductor loss, the switches are designed based on CPW lines.
Contact type series switch is chosen over capacitive type as it
provides more flexibility for large system design. Two
different types of DC-contact RF MEMS switches, of inline
cantilever beam and clamped-clamped beam types are designed
and modelled as shown in Figure 1 and 2. The switches are
designed with CPW technology with 60pm center conductor,
20pm gap and 120pm ground widths and the beams are
suspended 2.5ptm above the substrate. Both of the switches are
fabricated in the Center of Integrated RF Engineering (CIRFE)
research laboratory at the University of Waterloo, Ontario,
Canada, based on the CIRFE six-mask process [3].
A. Switch design
1) Inline cantilever beam switch
Figure 1 shows the design of our proposed novel inline
cantilever beam configuration. The initial switch design is
similar to its conventional counterpart [3]. However a set of
dimples are added within and along the two sides of the beam.
By adding dimples along the inline direction, the stiffness in
that direction is increased and hence reduces stress sensitivity.
This is advantageous in cantilever beam design as the stress
sensitivity is controlled locally as well as directionally. Thus,
the unwanted warpage of the cantilever beam which is
common in conventional cantilever type switches is eliminated
as demonstrated in next section.
The lumped circuit model of the inline cantilever beam switch
is shown in Figure 2. In this circuit, the cantilever beam is
represented by a transmission line with characteristic
impedance Zh and electrical length Pl. The two CPW lines
around the beam at the ports contribute to the two Zo
transmission line. Capacitive coupling between the two CPW
lines via the electrodes introduces Cp. There is one capacitor
Cs adjacent to Zh at off state or one resistor Rs at on state due
to coupling capacitance and contact resistance respectively.
The cantilever beam is designed with signal line width of 70ptm
and ground width of 120pm to achieve better matching at down
state. Cantilever beam is expected to have a good on state
performance as it only introduces minimal discontinuity and
one inline contact resistance. The contact resistance Rs is
mainly affected by surface roughness of the contact area as
 Figure 1. Inline cantilever beam switch physical model

C--~~~
Cp

ON

Cp
i1
OFF
E~~R

Cs

Figure 2. Inline cantilever beam switch lumped circuit model

well as the applied force between contacts. If contact surfaces

are smooth enough and the applied force is large, Rs should be
relatively small. In the off state, the coupling capacitance Cs
can be estimated by the dimple area and the signal line to beam
high. However, the capacitance value estimated would be
lower than measurement due to fringing fields.
2) Clamped-clamped beam switch
In order to miniaturize clamped-clamped beam switch design
and make it suitable for large size networks, the beam is placed
in between the CPW ground planes as shown in Figure 3. The
lumped circuit model for this design is similar to the cantilever
beam except instead of having capacitor or resistor around the
beam at off or on state respectively on one side, clamped-
Zo

Zn
:./'ivZX~ I
Figure 3. Clamped-clamped beam switch physical model

Rc

Lp

cg cg
X Lp
op

ON

OFF
Lp
C09
Rc

Lp

Lp

9Cg

Figure 4. Clamped-clamped beam lumped circuit model

Zo

clamped design has them on both sides of the beam. This is

because rather than connecting one side of the beam to the
signal line at all time, both sides are either connecting or
disconnecting to the signal line together. Also, since the beam
is connecting to the anchors via meander lines and the meander
induces inductance, Lp is generated. Meanders are necessary
in this beam design as they reduce the overall spring constant
and hence lower the actuation voltage. Moreover, anchors are
capacitively coupled to the ground planes, and Cg arises as a
result. The beam has different characteristic impendence shown
by Zh and electrical length PI similar to the cantilever beam. To
achieve good on state insertion loss and return loss in this
design, Rs, Cp and Cg must be minimized, Lp must be
maximized and Zh should be designed to be around 50Q. To
achieve good off state isolation, the dimple areas must be small
in order to reduce capacitive coupling through Cs. In both
designs, release holes are added on the beam to reduce squeeze
film damping effects as well as to ensure structures are
properly released during the release process. Release holes can
be added such that they introduce minimum distortion to the
overall performance. The ground planes around the beam are
designed to be elevated in both designs in order to facilitate
external biasing to the electrode and the beam. This especially
provides more flexibility in design of the networks with large
number of switches.
B. CIRFE six-maskfabrication process
With the intention to achieve good RF performance device, a
low loss ceramic, alumina wafer with dielectric constant (£) of
9.9 is selected as the base substrate. To begin the process, first
0.04ptm Chromium (Cr) and ltm Gold (Au) is evaporated on

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 the wafer. It is then patterned with mask 1 and etched to form
CPW lines for switches. The process is then followed by Cr
lift-off to pattern DC biasing lines. Cr lift-off is achieved by
using thick photo insensitive resist (LOR) and negative
photoresist on top. Then, the photoresist is patterned with light
mask (mask 2) followed by seriously over etching the lower
resist by over developing to introduce undercut profile. After
that, thin Cr film (0.03ptm) is deposited. Then the resist and
unwanted Cr is striped off. Oxide layer (0.7ptm) is deposited
and patterned using mask 3 to form insulation layer. To
improve the adhesion of oxide and gold a layer of Titanium-
Tungsten (TiW) alloy (0.04ptm) is introduced between the two
layers. Sacrificial layer is added by spinning on 2.5pim
photoresist. It is subsequently patterned with mask 4 and 5 to
form anchors to the lower gold layer and dimples on the top Figure 6. SEM picture of clamped-clamped DC switch
layer. Afterwards, l1tm of gold is deposited on sacrificial layer
which is a sputtered seed layer and electroplated gold on top. III. TEST RESULTS AND DISCUSSION
The gold layer is then patterned with mask 6 to form beams. Several clamped-clamped and cantilever beam switches
Although electroplated gold has relatively higher stress in were designed, fabricated and tested. Both types exhibit
comparison with the evaporated and sputtered gold, it is still excellent RF performance. The numerical simulations of HFSS
employed in this fabrication process. This is because our for RF performance and Coventor for mechanical actuation
proposed designs are not very stress sensitive. Secondly, were compared with the measurements, in Table 1, while the
electroplating gold is a lower cost process. After all the layers measured data are presented in Figures 9 and 10.
are deposited and patterned, the wafer is released by partial dry
etching using oxygen plasma in RIE and partial wet releasing. The clamped-clamped beam switch measured results show
This it is followed by critical drying, using a CO2 dryer, to less than a 0.5dB insertion loss and a better than 24dB return
complete the process. The SEM images of the fabricated loss for all the frequency range up to 40GHz. Good return loss
clamped-clamped and cantilever beam switches are shown in of the switch shows that the bias lines connected to the beam
Figures 6, 7, and 8. do not introduce much mismatch. Off state isolation is better
than 26dB up to 40GHz. The measured actuation voltage of the
beam is 1 OOV that can be considerably reduced by introducing
meanders such as using folded suspension meanders.
TABLE I. SWITCHES PERFORMANCE SUMMARY MEASURED AT 40GHz
Clamped-Clamped Cantilever
Deposit Cr & Au Sacrificial layer (Mask 4 & 5) beam switch beam switch
Simulated Measured Simulated Measured

Voltage 73V1 100V 46V1 -60V

Insertion 0.4dB2 0.5dB 0.17dB2 0.35dB
loss
Pattern Cr & Au (Mask 1) Deposit Top Au Return loss 20dB2 24dB 40dB2 24dB
Isolation 32dB2 30dB 18dB2 22dB
1 Coventorware simulation results
2 HF SS simulation results

lift-off Cr (Mask 2) Pattern top Au (Mask 6) Our proposed cantilever beam switch exhibits a 0.35dB
insertion loss up to 40GHz which is much superior compared
to clamped clamped beam. This is due to the fact that this type
of switches utilizes only one contact resistance in the signal
path whereas clamped-clamped beams have two contact points.
The measurement data also reflects excellent matching. Less
PECVD oxide (Mask 3) Release than 24dB return loss is measured up to 40GHz. The isolation
of the switch is less than 22dB for all the frequency band of
IME IM Gold (Au) Silicon oxide (SiOx) interest. The SEM images taken shown in Figures 7 and 8 for
Sacrificial layer
the conventional cantilever beam and the proposed new
I Chromium (Cr)
(photoresist)
cantilever beam respectively illustrated that the warpage has
been considerably reduced by inducing inline directional
Figure 5. CIRFE six mask process. dimples thus the beam is more resistive to deformation

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 resulting from the existing stress of the gold film. In Figure 8, S-para meters
the remaining slight bending of the beam is due to the section
of the beam that does not have inline directional dimples. This Insertion loss
could be avoided by extending the dimples toward the beam
I~~~~~~~~
anchor point. However, it should be noted that dimple lines
should not extend into or over the bending area in order to
maintain low actuation voltage.
Return loss >' '
IV. CONCLUSION .
_.

Two novel contact series RF MEMS switches have been

presented demonstrating low insertion loss and high isolation
up to 40GHz. A set of dimples are employed on the beam to -4
control beam stress sensitivity. This can locally and
directionally control the beam stiffness, thus adjustment in
stress sensitivity. The switches have been fabricated using
_f
L-

CIRFE six-mask process. The measured results illustrate 10 20 30 40

Frequency (GHz)
smooth beams with excellent RF performance. The cantilever
beam switch shows an actuation voltage of 60V with better Figure 9. Clamped-clamped beam switch RF performance.
than 0.35dB insertion loss and 24dB return loss up to 40GHz.
The isolation of the switch is 22dB for all the frequency band
of interest. The clamped-clamped beam switch results have S-parameters
been also presented indicating enhanced isolation performance
of 26dB up to 40GHz with 0.5dB insertion loss.
Inerio los
--

lsolatior

Return loss

30;40
-5
0 10 20 30 40
Frequency (GHz)
Figure 10. Catilever beam switch RF performance.
Figure 7. Conventional cantilever beam
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