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Pbse Bandstrucure
Pbse Bandstrucure
Pbse Bandstrucure
Electronic Band Structure and Optical Properties of PbTe, PbSe, and PbS~
'
S. E. Kohn, P. Y. Yu, Y. Petroff, ~ Y. R. Shen, Y. Tsang, and M. L. Cohen
Department of Physics, University of California
and Inorganic Afaterials Research Division, Lawrence Berkeley Laboratory, Berkeley, California 94720
(Received 5 September 1972)
By using the techniques of wavelength-modulation spectroscopy, we have measured the reflectivity
R (co) and the derivative of the reflectivity, (1/R)d R/d co, for PbTe, PbSe, and PbS from 1.5 «6
eV. We have independently calculated the band structure, frequency-dependent dielectric function, density of states,
and derivative reflectivity spectrum for all three compounds by the empirical pseudopotential method.
tors,'
of this kind exist for the IV-VI semiconduc-
' but not all of the above band-structure
scopy and a description of our experimental appa-
ratus has been given elsewhere. A double-beam
calculations have been tested in this way. optical system is used to normalize the ref lectivity
Until recently, the only optical data in the vis- and to cancel the background contributions to the
ible and ultraviolet spectral regions available for derivative signal. The system is operated in a
comparison to theoretical calculations have been configuration that measures R(X) and dR/RdX si-
the near-normal incidence ref lectivity measure- multaneously. These results are then converted
ments of Cardona and Greenaway, '6 and of Belle. ' to R(&u) and dR/Rd&u by a relatively simple corn
1477
1478 KOHN, YU, PE T ROF F SHE N, TSANG, AND CQHE N
100
PbS
0-
1. 5K
—50
)%
0 h
I (gg -Q5—
-1.0-
I I
2 3 4 5 6 2 3 4 5
ENERGY (eV) ENERGY (eV)
.
FIG. 1. Refj.l ec txvx' z and derivative re ectxvi of 3. Ref lectivity and derivative ref lecti'vi' of PbS
PbTe at 5'K. The d otted e curve is the theoretzca at 5'K. The dotted curve is the core~5'
(1/R)dR/dv spectra calculateted by EPM. spectra calculated by EPM.
.
uter manipulation. 1 true for the other two lead salts although
Sam les of all three compounds studied wer
were n have the crystals too pe rform the same
we did not
i le crystals. . All of the samples used were
oduce a clean fl at su
cleaved to prod
d'
The PbS crys-
.~.....d;. . measurements as in PbS. The same conclusion
ined if one estimates the effecct of
surface field on the wavelength-m ae
' '
may not be correct, thoug h th e rrelative measure- The experimentally meas easured ref lectivity spec-e-
ments are stroll ver y acceptab 1e. Once inside the ra R, u&) and derivative ref lectivity spectra
'
Dewar, thee ssamples were continuous uousl y m
maintained Rde for PbTe, PbSe, an S d
tmos p here. T Temperrature control was Fi g s. 1-3 along wx'th theoretical calculations of
ed b flowing helium gas pas e s pe
'
s ectra
ec thus obtainedd are always
w reproducible, presented here re were measured at
t mination
indicating that surface contamina i has no observ- ectrum of PbTe agrees
'
bl ff ect on our spectra. e well with the results of Korn et al. at
We have also investigate ee The derivative spectrum o
field on the structures in our spectra y are striking y simi ectra the
measuring two PbS samples p wx th d E structures (in the notationtion of Cardona
-
10 and- 10' cm, respective el y.. We have and Greenaway'~) are well reso 1veed.. It is of par-
found no deference ce between th e spe t of th ticular interest
in to no t e the fine structure in the
two samples exceptt the structure at 5 . 08 eeV which derivative spectra, p articular 1y th e existence of
has a stronger temper erature dependence than an the ks on the low-energy side of thee E
s as we will show in Sec. V. Thus peak. These peaks are very simi similaar iin the pect a
we are led to conc onclude that, excep or Q p ~
I
IOO
Pbse
5'K The results agree well wxith those of Korn et a .
of PbTe. A quick glance at the t2(&cr)
I I I
oin and finer detai'1s o
oints
rom "-,-'-- .
of the optical spectrum.
Critical points obtaine d f-m
re listed in Table I, along with experx-
1
2 3 4 5 6
ENERGY(eV) s of revious wor Th d
. and derivative ref lectxvt. of wa s. First, crt xc p
termined in twoo ways.
The dotted curve is the theore ic ref lectivity were determinined from the dR/Rd&o
(1/R)dR/der spectra calculated by E spectra. However, an in thee Kramers-Kronig analy-
E LE C T RONIC BA ND STRUCTUREE AND
A OP T ICAL PROPERTIES 1 ~ e
30
I l
IV. CALCULATION
Pb Te
5'K '
IO- The EPM has
Th en widely
been mi
mz
ncnv applied t o many
potential form factox's
for many clem e i x'om different EP M
mentst {extracted
and-structure cal culations ) areax' now availabl e..
0 '
SI l5 E2
eese existing pseudopotentialial form factors V
for Pb, 8e, and n 8 respectlvelyq 1n
q
"IO- 50
-l5
-25
I
-20 4
- l5
I -75
ENERGY {AO
IO
I QJ 00
3 6 0 "0
ENERGY {eV)
G.
FIG 4. 4r)
~g(co) aalu ~ (M) 0
o e eq RQicl (0) I
g analysis of the 3
ENERGY {eV)
PbS
5 K —50
sis of the experimental data
s hift d . Th re foore
ore, a second liat of critical-point
rom the dest'd~ spectra is
0
-l50
3 4 5 6'5
e that, in electrore- ENERGY {eV)
TABLE I. Critical-pointenergies of (a) PbTe, {b) PbSe, and (c) PbS. The second column
contains critical points derived from experimentally measured (1/R)dR/dry. t;(w) stands for
weak. ] The third column has critical points from the F2/d~ spectra obtained by Kramers-
Kronig analysis. The fourth column contains the results of EPM calculations.
(a) PbTe~
Other experimental 1 dR d&2
data Rdu dM Theory Transition
o. 19o' 0. 19 1.{5-6)
1.24 1.07 z(s -v)
1.27 I {5-v)
2. 16{w)d
2. 18 2. 25 2. 1 2. 00
2. 3e" 2. 03
2. 56(w)~ 2. 3
3.S" 3.47 3.3 2. 78
4. 83(w) 4. 9 3. 1
5. 9 5. 9
Volume effects
transitions near X
11.2'
(b) I bSe
go 0. 16S' 0. 172 Mp
1.59 1 6
~ Mp
1 54c 1.97(w) 2. 0 1.9 Mg
1 78c 2. 18(w) 2. 1S 2. 3 Mo
0.1
a.
—0.1—
nS
—0.4—
cIS
—0.5
I
5 1
q (A'j
1482 PE TROF F, 8 HE I, TSANQ, AND C OHE N
'Io—
,
+Xj
Xe
Fs'
x.
I Fs
Xe I
Ks'
r; '
Fs
r„ r,
~ Kg Xy
A
L 4, $
Xj
Xe
Xe
re
—d
Le
—24—
' J- J-
r, -r X4
) Le
r K K X L
In Pb8, the levels arising from F35 and ~&3 crowd The imaginary part of the frequency-dependent
together as they decrease in energy away from, and dielectric function ex(co) has the form
drop below, the ~8 level of I'». This same effect
3~» coZ
of the crowding of the higher-energy bands is seen' 8
ex(&u)= ~
5(E, (k)-E„(k)-$(o)
in the optical spectrum where the energies of the
theoretical high-energy structure (E+ EI, E~) de-
viate somewhat from the measured data.
,
Le
10- Le
Ks&
Fs'
r.'
p
r; Xq
xs)
'Ks
2
I Lq
C5
I4a
0
Le
+ FIG. 9. Energy-band .
X7
&
Ks»
Fe' i
—6
Le
L
ELECTRONIC BAND STRUCTURE AND OPTICAL PROPERTIES. ..
where up, „and up„are the periodic parts of the va- &pE (k) at the mesh points] and may be continuously
lence- and conduction-band Bloch wave functions at integrated. Since the spectra contain two impor-
k and E„(k) and E,(k) are the energies of these tant factors, the density of states and the transi-
states. In the previous calculation of ca(w) for tion probability or dipole matrix element, these
PbTe, ' these wave functions and energies are ob- have to be known accurately when comparing with
tained by diagonalizing a pseudopotential Hamilton- experimentally measured spectra. Gilat aod co-
ian at 3M mesh points in the irreducible part of the workers obtain such accuracy for the density of
fcc cubic Brillouin zone. Approximately 3&&10 ran- states in Refs. 21 and 2'7 by treating the matrix
dom sampling points are then chosen using a Monte element of each cube as a constant. This implies
Carlo method. The energy eigenvalues and dipole that fine details of the computed spectrum could
matrix elements associated with each point are be significantly distorted. The computation of the
chosen by linear interpolation between the 356 mesh matrix elements was later taken to the same de-
points. The prominent structure in the e2(&o) origi- gree of accuracy as the density of states by Gilat
nate from Van Hove singularities at critical points and Kam. ~
where VQE, (k)]=0. This can be more clearly seen Along with the experimental derivative reflec-
if we write the k integration in Eq. (1) in terms of tivity data of the present work, we employ the
an integration over a surface S, corresponding to a Gilat scheme ~' in computing the e2(~) for PbTe,
constant interband energy difference E,(k) —E„(k). PbSe, and PbS. The pseudo- Hamiltonian is diago-
Assuming the dipole matrix to be a constant, nalized at 308 k points within the irreducible part
of the Brillouin zone. The mesh chosen is slightly
dS different from the former calculation for PbTe 4
'
I V;[E,(k) —E„(k)] 1
in that here the mesh points are shifted away from
symmetry directions to avoid degeneracy, a nec-
The expression on the right-hand side in Eq. (2) is essary condition of the Gilat scheme. For this
the joint density of states. calculation, the dipole matrix element inside each
Gilat and Dolling ~ developed a different method mesh is taken to be a constant equal to the value
of ca1culation first applied to a computation of the at the mesh point. This is done for two reasons.
~' This First of all, previous experience with PbTe indi-
phonon density of states for a cubic crystal.
method proved to be of much higher resolution, cates the usefulness of even the joint density of
speed, and accuracy in comparison with traditional states in determining the origin of the main struc-
random-point sampling methods. This method also ture in the ref lectivity. Second, a first-order per-
involves dividing the irreducible section of the first turbation calculation on the dipole matrix element
Brillouin zone into a cubic mesh, but instead of tak- at the mesh point to allow interpolation between
ing discrete random points within the mesh, the points requires far more computer time than doing
constant frequency surfaces inside every small a perturbation calculation on the energy. There-
cube are approximated by a set of parallel planes fore, as a first attempt, we have taken the matrix
[the directions of the planes are determined by elements as constant in each small cubic mesh.
12
x4
S K5
+
r+~s
x'":
4
'r,'
—
K5 X" X
r; '4
K5 7
X-X
K5
I IG. 10. Energy-band
K5 structure of PbTe (a repro-
duction from Ref. 4).
0—
r; r;
r-i
4 r4—
r'— 5
5
x4+
X+
x
V. DISCUSSION sampling scheme probably portrays the actual &~(~)
better than the Gilat scheme. Otherwise, the
The final theoretical results are presented in agreement for the energy positions and the general
Figs. 1-3 and the theoretical dR/Rd~ spectra are profile between the experimental and theoretical
shown as dashed lines in Figs. 1-3, together with &,(~) using the Gilat scheme is good. The theoreti-
the experimental spectra. The corresponding band
structures for PbSe, PbS, and PbTe are given in
50
Figs. 8-10, respectively. In Fig. 11, the corre- I&). Z,
l
I
~5
I
signments for PbTe, PbSe, and PbS using the Energy (eV)
more than 13 eV p
e ge. Since these band
n
+ e results in explainin
'
I — gg
~
dt o ne wouldld antici
~
'pa te iyo
so be useful in stud
"
/
K
—+ in photoemis-
u yang
0 sion experiments.
W avelength-modulation s ctro
'
capable of detectin many fine structures xn th e op-
e ecting man
—42
-41 I I t I I I I I 1
K 40 Xo
-39 PbTe
—38
I
4 5 6
ENERGY (eV) 0
FIG. 12. Temperature dependence
p ence of the derivative
reflectivity (1/R) dR/d~ of PbS around th e E3 structure. I
C
O
(c)
'
PbSto gainstt th
the idea of
, xn our case, the excitons PbS
i th hi'g h conduction
d bands ma Cl
0
've di&electric'
smaller effective 1 constantn
xe ectric constant E . The free
ant E„. 0 1
'
carriers tend
en too screen the attractive
b tw 1 t ns a nd holes, and this
I
C
O
exes onic effect decrea
plain why the excit eases with higher
carrier concentration
n ra ion in our observation.
For
or completeness, we also res
1 1 tio ofth e density
d of states 0
—12 -10 2 4 6 8 10 12
d PbSi Fi . 13. i Energy (eVj
FIG. 13. Dens er of states per eV
ensity of states (number
e valence-band i tak en to be the
edge is per primitive cell) for a) PbTe (b) PbSe, and (c) PbS.
E LE CTRONIC BAND STRUC TURE AND OPTICAL PROPE RT IE S. . . 1487
tical spectrum of PbTe, PbSe, and PbS. The very different from X. Hence, the calculation is
agreement of the experimental and theoretical a little more sensitive to the extrapolation condi-
(I/R) dR/d~ and e, (&o) is quite good. Based upon tions used for the low- and high-energy limits of
these results, we conclude that the EPM gives the integral.
band structures of the lead chalcogenides that are By differentiating Eq. (A2) with respect to X,
essentially correct throughout the Brillouin zone.
With these band structures, we have gained con-
fidence in a more thorough understanding of the
optical properties of the lead chalcogenides. The
we have
d8 I I, d lnR, InR(X')
(A3)
computational techniques may be improved by The derivatives of && and &2 can then be calculated
changing the approximation used in handling the from d InR/dX and d8/d),
dipole matrix elements. If this is done, we be- In evaluating the integrals for 8 and d8/dX, it
lieve that the band-structure calculations are cap- is necessary to make truncating approximations
able of giving not only the main structure but also for the low- and high-energy limits of the inte-
the very fine structure in the optical ref lectivity grals. It is well known that the ref lectivity of
spectra. semiconductors becomes approximately constant
at very low energies. It is common to take R(X)
ACKNOWLEDGMENTS
as constant for long wavelengths when computing
One of us (Y. W. Tsang) would like to thank 8 via Eq. (Al). ~~ We have made a similar approx-
John Joannopoulos for helpful discussions on the imation d InR/d&u = 0 for long wavelengths. Also,
Gilat scheme of computation. We would also like structure in d lnR/dX far away from the long-wave-
to thank M. Mulrey for assistance in prepariig length limit of Eqs. (A2) and (A3) tend to oscillate
some of the graphs. around zero, giving small contributions to the in-
APPENDIX: KRAMERS-KRONIG ANALYSIS
tegrals. At very high energies, it is expected,
from a Drude type of dielectric function, that the
To obtain e, (&u) and e2(&u), we need to know both ref lectivity should decrease roughly as ~ 4.
the absolute ref lectivity R(&u) and the correspond- Therefore, we approximated a functional depen-
ing phase angle 8(ur). ' These two quantities are dence for R of (d ", where A is an adjustable pa-
related by the Kramers-Kronig relation rameter around 4. To make the calculations less
sensitive to A, the room-temperature reflectivity
8( )
A.
( d, lnR(X')
(X')'-~' (Al) data of Cardona and Greenaway from 6 to 20 eV
7r]
were used in computing the integrals. The re-
This can be transformed into the form sults are very insensitive to the choice of A used.
Varying A by over a factor of 2 does not change
(A2) the shape of the curves appreciably, but does
change the over-all magnitudes somewhat. The
which is more appropriate for our own case, since absolute magnitudes of the curves are also some-
we measure d lnR/dX with greater accuracy than what in error because the absolute magnitude af
R. This method of calculation has the disadvan- (I/R) dR/dX is a little uncertain, although this does
tage that the function ln l(X+ V)/(X- X') does not I not have a very strong effect in the Kramers-
go to zero as fast as I/(X"- X ) as X' becomes Kronig analysis.
~Work supported in part by the U. S. Atomic Energy 6Y. W. Tsang and M. L. Cohen, Phys. Rev. B3, 1254
Co~mission and the National Science Foundation, Grant No. (1971).
GP 13632, Al. 'M. L. Cohen and Y. W. Tsang, Ref. 2, p. 303.
«IBM Postdoctoral Fellow. L. E. Johnson, J. B. Conklin, Jr., and G. W. Pratt, Jr., Phys.
~On leave from the University of Paris. Rev. Lett. 11, 538 (1963); J. B. Conklin, Jr. , L. E. Johnson,
'M. L. Cohen, Y. Tung, and P. B. Allen, J. Phys. (Paris) Suppl. and G. W. Pratt, Jr. , Phys. Rev. 137, A1282 (1965).
29, C4-163 (1968). L. G. Ferreira, Phys. Rev. 137, A1601 (1965).
The Physics of Semimetals and Narrow ' S. Rabii, Phys. Rev. 167, 801
Gap Semiconductors: (1968); S. Rabii, Phys. Rev.
Proceedings of the Conference held at Dallas, Texas, 20-21 173, 918 (1968).
March 1970, edited by D. L. Carter and R. T. Bates "H. Overhof and V. Rossler, Phys. Status Solidi 37, 691
(Pergamon, New York, 1971). (1970).
Proceedings of the Conference on the Physics of IV-VI "F. Herman, R. L. Kortum, I. Ortenburger, and J. P. Van
Compounds and Alloys, Philadelphia, 1972 (unpublished). Dyke, J. Phys. (Paris) Suppl. 29, C4-62 (1968).
Y. W. Tung and M. L. Cohen, Phys. Rev. 180, 823 (1969); ' P. J. Lin and L. Kleinman, Phys. Rev. 142, 478 (1966).
Phys. Rev. B 2, 1216 (1970); Y. W. Tung and M. L. Cohen, '4See Ref. 1.
Phys. Lett. A 29, 236 (1969). "D. D. Buss and N. J. Parada, Phys. Rev. B 1, 2692 (1970).
Y. W. Tsang and M. L. Cohen, Solid State Commun. 9, 261 ' M. Cardona and D. L. Greenaway,
Phys. Rev. 133, A1685
(1971). (1964).
KOHN, YU, PETE, OFF, SHEN, TSANG, AND COHEN
"M. L. Belle, Fiz. Tverd. Tela 5, 3282 (1963) [Sov. Phys. -Solid G. Gilat and Z. Kam, Phys. Rev. Lett. 22, 715 (1969).
State 5, 2401 (1964)]; Fiz. Tverd. Tela 7, 606 (1965} [Sov. ' J. P. Walters and M. L. Cohen, Phys. Rev. 183, 763 (1969).
Phys. -Solid State 7, 480 (1965}]. ' Y. Petroff, S. E. Kohn, and Y. R. Shen, in First
' D. E. Aspnes and M. Cardona, Phys. Rev. 173, 714 (1968}. International Conference on Modulation Spectroscopy, Tucson,
' T. Nishino, H. Ogawa, and Y. Hamaka, J. Phys. Soc. Jap. Arizona, November, 1972 (unpublished).
30, 1113 (1971). 'Y. Toyozawa, M. Inoue, M. Okazaki, and E. Hanamura, J.
D. M. Korn, M. Welkowsky, and R. Braunstein, Sohd State Phys. Soc. Jap. Suppl. 21, 133 (1967).
Commun. 9, 2001 (1971); D. M. Korn and R. Braunstein, "A very good agreement with the theoretical valence-band
Phys. Rev. B 5, 4837 (1972). density of states has been obtained by photoemission
"G. Gilat and G. Dolling, Phys. Lett. 8, 304 (1964}. measurements on PbTe."R. Pinchaux, Y. Petrol, D.
"R. R. L Zucca, Ph. D. thesis (University of California, Dagneaux, and M. Balkanski, in Conference on Physics of
Berkeley, 1970) (unpublished). IV-VI Compounds and Alloys, Philadelphia, 24-25 March
~3B. O. Seraphin and D. E. Aspnes, Phys. Rev. B 6, 3158 (1972). 1972 (unpublished); and W. E. Spicer and G. J. Lapeyre,
'"M. L. Cohen and V. Heine, in Solid State Physics, edited by Phys. Rev. 139, A565 (1965). After this work has been
H. Ehrenreich, F. Seitz, and D. Turnbull (Academic, New completed, x-ray photoemission [F. R. McFeely, S.
York, 1970), Vol. 24. The data points in Figs. 6, 7(a), and 7(b) Kowalczyk, L. Ley, R. A. Pollak, and D. A. Shirley, Phys.
are taken directly from Tables 15 and 16, pages 212 and 215. Rev. B (to be published)] and uv photoemission PVI. Cardona,
"Y. W. Tsang, Ph. D thesis (University of California, Berkely, D. W. Langer, N. J. Shevchik, and J. Tejeda (unpublished)]
1970) (unpublished). have been reported and in both cases good agreement was
"D. L. Mitchell, E. D. Palik, and J. N. Zemel, in Physics of found in all three lead salts between the experimentally
Semiconductors, Paris, 1964, edited by M. Hulin (Academic, determined valence-band density of states and those shown in
New York, 1964), p. 325. Figs. 13(a)—13(c).
G. Gilat and L J. Rankenheimer, Phys. Rev. 144, 390 "M. Cardona, in Optical Properties of Solids, edited by S.
(1966). Nudelman and S. S. Mitra (Plenum, New York, 1969), p. 59.