Chapter 10 Solutions (Global Edition)

Prob. 10.1
Sketch the band diagram.

This is called a backward diode because it conducts freely in the reverse direction (due to
tunneling), but the current remains small for low voltage forward bias.
Prob. 10.2
(a) Calculate the minimum forward bias for which tunneling occurs.

The sizes of E vp – E F and E F – E cn determine the voltage required to align filled states
opposite empty states.

Tunneling begins when E Fn – E Fp = E t which occurs at a forward bias of 0.3V

(b) Calculate the maximum forward bias for which tunneling occurs.
Tunneling ends when E cn – E vp = E t which occurs at a forward bias of
0.3V + 0.1V + 0.1V = 0.5V

(c) Sketch the I-V curve for the diode.

Band to band tunneling is maximized when E Fn – E Fp = 0.1V and is essentially zero when
E Fn – E Fp = 0.2V.
Prob. 10.3
(a) Write down the complete continuity equation and solve it.

Without any applied field, the continuity equation will be diffusion dominated. Thus the
continuity equation will become,

∂p( x, t ) 1 ∂J p ( x, t )
=− + G P ( x, t ) − R P ( x, t )
∂t q ∂x

∂δp δp
Under diffusion it reduces to, = GP −
∂t tP

 − t  δp
With general solution: δp (t ) = A. exp  +
 P  tP
t
From boundary condition: δp (0 ) = 0; G P .τ P = − A
  − t 
So the final solution will become, δp(t ) = GP .t P 1 − exp  , where all the
 t
 P 
symbols have their usual meanings.

For the n-type Si sample,

  − 5 x103 
−9 
δp(t ) = 10 20
x10 x10 x 1 − exp  = 1012 /cm3.
  10 x10 − 9 
 

(b) When the steady state excess hole concentration is 2 x 1014 /cm3 as t → ∞ , estimate
the minority carrier lifetime.

2 x1014
δp (t ) |t → ∞ = GP .t P; τ P = = 2 µ sec
20
10

(c) Determine the time at which the excess minority carrier concentration becomes one
third of the steady state value obtained in part (b).

−τ 1
Time at which exp( ) = will be, t = ln(3).t P = 1.0986 x 2 x10 − 6 = 2.1972 µs
τ 3
Prob. 10.4
Find the criteria for negative conductivity in terms of mobilities and electron
concentrations in the Γ and L bands of GaAs.
J = σ ⋅ ε = q ⋅ [μ Γ ⋅ n Γ +μ L ⋅ n L ] ⋅ ε = q ⋅ [μ Γ ⋅ n Γ +μ L ⋅ (n o - n Γ )] ⋅ ε
 dμ 
= q ⋅ [μ Γ ⋅ n Γ +μ L ⋅ n L ] + q ⋅ ε ⋅ (μ Γ -μ L ) ⋅ Γ + n Γ ⋅ Γ + n L ⋅ L  since
dJ dn dμ dn o
=0
dε  dε dε dε  dε
dμ 
ε ⋅ (μ -μ L ) ⋅
dn Γ dμ
+ nΓ ⋅ Γ + nL ⋅ L 
dε dε dε 
Γ
dJ 
dε
< 0 when < -1
μ Γ ⋅ n Γ +μ L ⋅ n L
dμ L
now let A = μ Γ ⋅ ε and B = μ L ⋅ ε giving
dμ Γ A B
= - 2 and
dε ε dε ε
=- 2

dn Γ 1
(A - B) ⋅ - ⋅ (n Γ ⋅ A + n L ⋅ B)
dε ε < -1
1
⋅ (n Γ ⋅ A + n L ⋅ B)
ε
ε ⋅ (A - B) ⋅ dn Γ
dε - 1 < -1
nΓ ⋅ A + nL ⋅ B

ε ⋅ (A - B) ⋅ dn Γ
dε <0
nΓ ⋅ A + nL ⋅ B
dn Γ
B is less than A since μ L � μ Γ . Thus must be negative. That is
dε
the conductivity is negative only while electrons are being transferred from
the lower lying Γ valley into the upper L valley.

Prob. 10.5
(a) Find the minimum electron concentration and time between current pulses.
1012 1
1012 1
n o ⋅ L = 10 12 1
→ no = cm 2
= cm 2
= 2 ⋅1015 1
cm 2
L 5 ⋅10 cm
-4 cm3

L 5 ⋅10-4 cm
τt = = 7 cm
= 5 ⋅10-11s
vs 10 s

(b) Estimate the d-c power dissipated per unit volume.

P = I ⋅ V = (q ⋅ n 0 ⋅ vd ⋅ A) ⋅ (ε ⋅ L)

= q ⋅ n 0 ⋅ vd ⋅ ε = 1.6 ⋅10-19 C ⋅ 2 ⋅1015

P 1
⋅ 2 ⋅107 cm
⋅ 3 ⋅103 V⋅s
= 2 ⋅107 W
A⋅L cm3 s cm cm
Prob. 10.6
(a) Calculate the ratio of the density of states in the Γ and L conduction bands of GaAs.
3
 2π ⋅ kT ⋅ m*n  2
NC = 2 ⋅  
 h2 
3 3
N  m* (L)  2  0.55  2
so L =  *n  =  = 23.5
NΓ  m n (Γ )   0.67 

(b) Assuming a Boltzmann distribution, find the ratio of electron concentrations in these
bands at 300K.
nL - 0.30eV
= 23.5 ⋅ e 0.0259eV = 2.2 ⋅10-4
nΓ
The upper L valley is essentially empty at equilibrium at 300K.

(c) Find the equivalent temperature of an electron in the Γ minima.

0.0259eV+0.30eV
T= = 3782K
8.62 ⋅10-5 eV
K

Prob. 10.7
Explain why two separate BJTs cannot be connected to make a p-n-p-n switch.
The p-n-p-n switching action depends on injection of carriers across both base regions
and collection into the base regions of the opposite transistor. For example, transistor
action in the p-n-p feeds majority carrier holes to the base of the n-p-n. This cannot occur
with separate transistors; so, the p-n-p-n switching effect does not occur.

Prob. 10.8
How does gate bias provide switching in an SCR?
Switching in the SCR of Fig. 10-13 occurs when holes are supplied to p 2 at a sufficient
rate. Although j 3 is forward biased wit i G =0, transistor action does not begin until hole
injection by i G reaches the critical value for switching.
Prob. 10.9
(a) Sketch the equilibrium band diagram in the forward-blocking and forward-
conducting states.
(b) Sketch the excess minority carrier distribution in regions n 1 and p 2 in the forward-
conducting state.
Prob. 10.10
Draw diagrams for the forward-blocking and forward-conducting states of a p-n-p-n.

Forward Blocking State

In the simplified diagram above, we neglect minority carrier transport across each base
region. Electrons generated thermally in and about j 2 recombine in n 1 and j 1 with
injected holes. Similarly, generated holes feed recombination with injected electrons in
p 2 and j 3 . In absence of transistor action, current is limited to essentially the reverse
saturation current of j 2 .
In the figure below, we neglect generation compared with transport due to transistor
action. Recombination takes place in n 1 and p 2 , but many injected carriers are
transported through the device by transistor action. More complete diagrams may be
found in the book by Gentry et al., p 72 and 76 (see chapter 10 reading list).

Forward Conducting State

Prob. 10.11
Find the expression for the total current flowing through the device.

Here, α 2 = 4α 1 , I CO 2 = 4 I Co1 and M n = 2 M p

Since, iC1 = α 1 ..i.M p + I Co1 .M p and iC 2 = α 2 ..i.M n + I Co 2 .M n

After modifications,

iC1 = α 1 ..i.M p + I Co1 .M p

iC 2 = 8α 1 ..i.M p + 4.I Co1 .M p

Thus total current, i = iC1 + iC 2 = 9.α 1 .i.M p + 5.I C 01 .M p

5.I C 01 .M p
i=
1 − 9.α 1 .M p