Characteristics of Thyristor

A thyristor is a four-layer 3 junction p-n-p-n semiconductor device consisting of at

least three p-n junctions, functioning as an electrical switch for high power
operations. It has three basic terminals, namely the anode, cathode and the gate
mounted on the semiconductor layers of the device. The symbolic diagram and the
basic circuit diagram for determining the characteristics of thyristor is shown in the
figure below

From the circuit diagram above we can see the anode and cathode are connected to
the supply voltage through the load. Another secondary supply Es is applied between
the gate and the cathode terminal which supplies for the positive gate current when
the switch S is closed.

Silicon Controlled Rectifier SCR | Two Transistor

Model | Operating Principle
What is Thyristor or SCR?
It is a silicon-based semiconductor device, which is used in electrical circuits for
switching operation. SCR, whose full form is silicon-controlled rectifier, is also a
well-known member of thyristor family. Although there are many different members
are available in thyristor family, but silicon-controlled rectifiers are so widely used
that as if thyristor and SCR become synonymous. The characteristic of thyristor
consists of the characteristic of thyratron tube and characteristic of transistor.
In other words, it can be said, that the characteristic of thyristor is combination of
characteristics of thyratron tube and transistor. That is why the name of thyristor
consists of first four letters of thyratron tube and last five letters of transistor.
[Thyratron + Transistor].
The device has ideal states, i.e., On and OFF. Generally, an SCR consists of two PN
junctions, but sometimes it may also consist of more than two P-N junctions.
If we see from the constructional and operational point of view, it is four-layer
(PNPN) three terminals (Anode, Cathode, Gate) semi-controlled device. This device
has two states i.e., on and OFF. We can turn it ON by sending a gate current signal
between second P layer and cathode. But we cannot turn it OFF by control signal.
That means we have control upon its turn ON, once it goes to conduction mode, we
lose control over it. It can block both forward and reverse voltage but can conduct
only in one direction. In very high-power application, like AC –DC converter, AC –
AC converters, engineer’s first choice is always thyristor or silicon-controlled
rectifier due to its very low conduction loss.

Two Transistor Model of SCR

Basic operating principle of SCR can be easily understood by the two-transistor
model of SCR or analogy of silicon controlled rectifier, as it is also a combination

of P and N layers, shown in figure below.

This is a pnpn thyristor. If we bisect it through the dotted line, then we will get two
transistors i.e., one pnp transistor with J1 and J2 junctions and another is with J2 and

J3 junctions as shown in figure below.

When the transistors are in off state, the relation between the collector current and
emitter current is shown below

Here, IC is collector current, IE is emitter current, ICBO is forward leakage current, α

is common base forward current gain and relationship between IC and IB is

Where, IB is base current and β is common emitter forward current gain. Let’s for
transistor T1 this relation holds

And that for transistor T2

Now, by the analysis of two transistors model we can get anode current ,

From equation (i) and (ii), we get,

If applied gate current is Ig then cathode current will be the summation of anode
current and gate current i.e.,

By substituting this value of Ik in (iii) we get,

From this relation we can assure that with increasing the value of (α1 + α2) towards
unity, corresponding anode current will increase. Now the question is how (α1 + α2)
increasing? Here is the explanation using two transistor model of SCR.
At the first stage when we apply a gate current Ig, it acts as base current of T,2
transistor i.e., IB2 = Ig and emitter current i.e., Ik = Ig of the T,2 transistor. Hence
establishment of the emitter current gives rise α2 as

Presence of base current will generate collector current as

This IC2 is nothing but base current IB1 of transistor T,1, which will cause the flow
of collector current,

IC1 and IB1 lead to increase IC1 as Ia = IC1 + IB1 and hence, α1 increases. Now,
new base current of T2 is
Ig + IC1 = (1 + β1β2) Ig
which will lead to increase emitter current Ik = Ig + IC1 and as a result α2 also
increases and these further increases
IC2 = β2(1 + β1β2) Ig.
As IB1 = IC2, α1 again increases. This continuous positive feedback effect increases
(α1 + α2) towards unity and anode current tends to flow at a very large value. The
value current then can only be controlled by external resistance of the circuit.

V-I Characteristics of a Thyristor

On giving the supply we get the required V-I characteristics of a thyristor show in
the figure below for anode to cathode voltage Va and anode current Ia as we can see
from the circuit diagram. A detailed study of the characteristics reveal that the
thyristor has three basic modes of operation, namely the reverse blocking mode,
forward blocking (off-state) mode and forward conduction (on-state) mode. Which
are discussed in great details below, to understand the overall characteristics of a
thyristor.

Reverse Blocking Mode of Thyristor

Initially for the reverse blocking mode of the thyristor, the cathode is made positive
with respect to anode by supplying voltage E and the gate to cathode supply voltage
Es is detached initially by keeping switch S open. For understanding this mode, we
should look into the fourth quadrant where the thyristor is reverse biased.
Here Junctions J1 and J3 are reverse biased whereas the junction J2 is forward
biased. The behavior of the thyristor here is like that of two diodes are connected in
series with reverse voltage applied across them. As a result, only a small leakage
current of the order of a few μ Amps flows. This is the reverse blocking mode or the
off state, of the thyristor. If the reverse voltage is now increased, then at a particular
voltage, known as the critical breakdown voltage VBR, an avalanche occurs at J1
and J3 and the reverse current increases rapidly. A large current associated with VBR
gives rise to more losses in the SCR, which results in heating.
This may lead to thyristor damage as the junction temperature may exceed its
permissible temperature rise. It should, therefore, be ensured that maximum working
reverse voltage across a thyristor does not exceed VBR. When reverse voltage
applied across a thyristor is less than VBR, the device offers very high impedance
in the reverse direction. The SCR in the reverse blocking mode may therefore be
treated as open circuit.
Forward Blocking Mode
Now considering the anode is positive with respect to the cathode, with gate kept in
open condition. The thyristor is now said to be forward biased as shown the figure
below.

As we can see the junctions J1 and J3 are now forward biased but junction J2 goes
into reverse biased condition. In this particular mode, a small current, called forward
leakage current is allowed to flow initially as shown in the diagram for
characteristics of thyristor. Now, if we keep on increasing the forward biased anode
to cathode voltage.
In this particular mode, the thyristor conducts currents from anode to cathode with a
very small voltage drop across it. A thyristor is brought from forward blocking mode
to forward conduction mode by turning it on by exceeding the forward break over
voltage or by applying a gate pulse between gate and cathode. In this mode, thyristor
is in on-state and behaves like a closed switch. Voltage drops across thyristor in the
on state is of the order of 1 to 2 V depending beyond a certain point, then the reverse
biased junction J2 will have an avalanche breakdown at a voltage called forward
break over voltage VB0 of the thyristor. But, if we keep the forward voltage less
than VBO, we can see from the characteristics of thyristor, that the device offers a
high impedance. Thus, even here the thyristor operates as an open switch during the
forward blocking mode.

Forward Conduction Mode

When the anode to cathode forward voltage is increased, with gate circuit open, the
reverse junction J2 will have an avalanche breakdown at forward break over voltage
VBO leading to thyristor turn on. Once the thyristor is turned on we can see from
the diagram for characteristics of thyristor, that the point M at once shifts toward N
and then anywhere between N and K. Here NK represents the forward conduction
mode of the thyristor. In this mode of operation, the thyristor conducts maximum
current with minimum voltage drop, this is known as the forward conduction
forward conduction or the turn on mode of the thyristor.
Thyristor Application Types Construction

Principle of Thyristor
A thyristor is normally four layer three-terminal device. Four layers are formed by
alternating n – type and p – type semiconductor materials. Consequently, there are
three p – n junctions formed in the device. It is a bistable device. The three terminals
of this device are called anode (A), cathode (K) and gate (G) respectively. The gate
(G) terminal is control terminal of the device. That means, the current flowing
through the device is controlled by electrical signal applied to the gate (G) terminal.
The anode (A) and cathode (K) are the power terminals of the device handle the
large, applied voltage and conduct the major current through the thyristor. For
example, when the device is connected in series with load circuit, the load current
will flow through the device from anode (A) to cathode (K) but this load current will
be controlled by the gate(G) signal applied to the device externally. A thyristor is
on – off switch which is used to control output power of an electrical circuit by
switching on and off the load circuit periodically in a preset interval. The main
difference of thyristors with other digital and electronics switches is that a thyristor
can handle large current and can withstand large voltage, whereas other digital and
electronic switches handle only tiny current and tiny voltage.

When positive potential applied to the anode with respect to the cathode, ideally no
current will flow through the device and this condition is called forward – blocking
state but when appropriate gate signal is applied, a large forward anode current starts
flowing, with a small anode–cathode potential drop and the device becomes in
forward-conduction state. Although after removing the gate signal, the device will
remain in its forward-conduction mode until the polarity of the load reverses. Some
thyristors are also controllable in switching from forward-conduction back to a
forward-blocking state.

Application of Thyristor
As we already said that a thyristor is designed to handle large current and voltage, it
is used mainly in electrical power circuit with system voltage more than 1 kV or
currents more than 100 A. The main advantage of using thyristors as power control
device is that as the power is controlled by periodic on – off switching operation
hence (ideally) there is no internal power loss in the device for controlling power in
output circuit. Thyristors are commonly used in some alternating power circuits to
control alternating output power of the circuit to optimize internal power loss at the
expense of switching speed.
In this case thyristors are turned from forward-blocking into forward-
conducting state at some predetermined phase angle of the input sinusoidal anode–
cathode voltage waveform. Thyristors are also very popularly used in inverter for
converting direct power to alternating power of specified frequency. These are also
used in converter to convert an alternating power into alternating power of different
amplitude and frequency. This is the most common application of thyristor.

Types of Thyristors
There are four major types of thyristors:
(i) Silicon Controlled Rectifier (SCR); (ii) Gate Turn-off Thyristor (GTO) and
Integrated Gate Commutated Thyristor (IGCT); (iii) MOS-Controlled Thyristor
(MCT) (iv) Static Induction Thyristor (SITh).

Basic Construction of Thyristor

A high- resistive, n-base region, presents in every thyristor. As it is seen in the
figure, this n-base region is associated with junction, J2. This must support the large
applied forward voltages that occur when the switch is in its off- or forward-blocking
state (non-conducting). This n-base region is typically doped with impurity
phosphorous atoms at a concentration of 1013 to 1014 per cube centimeter. This region
is typically made 10 to 100 micrometers thick to support large voltages. High-
voltage thyristors are generally made by diffusing aluminum or gallium into both
surfaces to create p-doped regions forming deep junctions with the n-base. The
doping profile of the p-regions ranges from about 1015 to 1017 per cube centimeter.
These p-regions can be up to tens of micrometer thick.
The cathode region (typically only a few micrometers thick) is formed by
using phosphorous atoms at a doping density of 1017 to 1018 cube centimeter. For
higher forward-blocking voltage rating of thyristor, the n-base region is made
thicker. But thicker n - based high-resistive region slows down on off operation of
the device. This is because of more stored charge during conduction. A device rated
for forward blocking voltage of 1 kV will operate much more slowly than the
thyristor rated for 100 V. Thicker high-resistive regions also causes larger forward
voltage to drop during conduction.
Impurity atoms, such as platinum or gold, or electron irradiation are used to
create charge-carrier recombination sites in the thyristor. The large number of
recombination sites reduces the mean carrier lifetime (average time that an electron
or hole moves through the Si before recombining with its opposite charge-carrier
type).
A reduced carrier lifetime shortens the switching times (in particular the turn-
off or recovery time) at the expense of increasing the forward-conduction drop.
There are other effects associated with the relative thickness and layout of the
various regions that make up modern thyristors, but the major tradeoff between
forward-blocking voltage rating and switching times and between forward-blocking
voltage rating and forward-voltage drop during conduction should be kept in mind.
(In signal-level electronics an analogous trade off appears as a lowering of
amplification (gain) to achieve higher operating frequencies and is often referred to
as the gain-bandwidth product).
Basic Operating Principle of Thyristor
Although there are different types of thyristors but basic operating principle
of all thyristors more or less same. The figure below represents a conceptual view
of a typical thyristor. There are three p–n junctions J1, J2 and J3. There are also three
terminals anode (A), cathode (K) and gate (G) as levelled in the figure. When the
anode (A) is in higher potential with respect to the cathode, the junctions J1 and J3
are forward biased and J2 is reverse biased and the thyristor is in the forward
blocking mode. A thyristor can be considered as back-to-back connected two bipolar
transistors. A p-n-p-n structure of thyristor can be represented by the p-n-p and n-p-
n transistors, as shown in the figure. Here in this device, the collector current of one
transistor is used as base current of other transistor. When the device is in forward
blocking mode if a hole current is injected through the gate (G) terminal, the device
is triggered on.
When potential is applied in reverse direction, the thyristor behaves as a
reverse biased diode. That means it blocks current to flow in revere direction.
Considering ICO to be the leakage current of each transistor in cut-off condition, the
anode current can be expressed in terms of gate current.

Where α is the common base current gain of the transistor (α = IC/IE). The
anode current becomes arbitrarily large as (α1 + α2) approaches unity. As the anode–
cathode voltage increases, the depletion region expands and reduces the neutral base
width of the n1 and p2 regions. This causes a corresponding increase in the α of the
two transistors. If a positive gate current of sufficient magnitude is applied to the
thyristor, a significant number of electrons will be injected across the forward-biased
junction, J3, into the base of the n1p2n2 transistor. The resulting collector current
provides base current to the p1n1p2 transistor.
 The combination of the positive feedback connection of the npn and pnp BJTs
and the current-dependent base transport factors eventually turn the thyristor on by
regenerative action. Among the power semiconductor devices known, the thyristor
shows the lowest forward voltage drop at large current densities. The large current
flow between the anode and cathode maintains both transistors in saturation region,
and gate control is lost once the thyristor latches on.

Transient Operation of Thyristor

A thyristor is not turned on as soon as the gate current is injected, there is one
minimum time delay is required for regenerative action. After this time delay, the
anode current starts rising rapidly to on-state value. The rate of rising of anode
current can only be limited by external current elements. The gate signal can only
turn on the thyristor but it cannot turn off the device. It is turned off naturally when
the anode current tends to flow in reverse direction during the reverse cycle of the
alternating current. A thyristor exhibits turn-off reverse recovery characteristics just
like a diode. Excess charge is removed once the current crosses zero and attains a
negative value at a rate determined by external circuit elements. The reverse
recovery peak is reached when either junction J1 or J3 becomes reverse biased. The
reverse recovery current starts decaying, and the anode–cathode voltage rapidly
attains its off-state value. Because of the finite time required for spreading or
collecting the charge plasma during turn-on or turn-off stage, the maximum dI/dt
and dV/dt that may be imposed across the device are limited in magnitude. Further,
device manufacturers specify a circuit-commutated recovery time, for the thyristor,
which represents the minimum time for which the thyristor must remain in its reverse
blocking mode before forward voltage is reapplied.

Thyristor Triggering
Today, the world is witnessing energy crises. This necessitates the efficient
utilization of electrical energy. Power electronics helps in accomplishing this task of
efficient energy usage. thyristor is an important family of devices in power electronic
system. SCR (Silicon Control Rectifier) is the important device in the thyristor
family. As the SCR is used more widely hence SCR is known as thyristor.
Applications of power electronics deals with the flow of electronic power. In
order to achieve better efficiency, the semiconductor devices used in power
electronic system are operated as switches. One of the semiconductor devices used
in a power electronic system is thyristor. Few of the other devices used as switches
are diodes, bipolar junction transistors (BJTs), metal oxide semiconductor field
effect transistor (MOSFET), insulated gate bipolar transistor (IGBT), gate turn off
thyristor (GTOs).
The term thyristor is a general name for a family of semiconductor device.
Thyristor families consist of large number of switching devices.
A thyristor is a solid-state power semiconductor device. It has four alternating
layer and three junctions J1, J2, J3 of N and P type semiconductor material. A
thyristor has three terminals. Namely anode, cathode, and gate. Thyristor acts as a
bistable switch, conducts when its anode is made positive with respect to cathode
and gate signal (between gate terminal and cathode terminal) is applied.

Triggering means turning ON of a device from its off state. Turning ON of a

thyristor refers to thyristor triggering. Thyristor is turned on by increasing the anode
current flowing through it. The increase in anode current can be achieved by many
ways.
1. Voltage Thyristor Triggering: -
Here the applied forward voltage is gradually increased beyond a pt. Known
as forward break over voltage VBO and gate is kept open. This method is not
preferred because during turn on of thyristor, it is associated with large voltage and
large current which results in huge power loss and device may be damaged.
2. Thermal Thyristor Triggering: -
If the temperature of the thyristor is high, it results in increase in the electron-
hole pairs. Which in turn increase the leakage current α1 & α2 to raise. The
regenerative action tends to increase (α1 + α2) to units and the thyristor may be
turned on. This type turn on is not preferred as it may result in thermal turn away
and hence it is avoided.
3. Light Thyristor Triggering: -
These rays of light are allowed to strike the junctions of the thyristor. This
results in increase in number of electron-hole pair and thyristor may be turned on.
The light activated SCRs (LASER) are triggered by using this method.
4. dv/dt triggering: -
 If the rate of rise of anode to cathode voltage is high , the charging current
through the capacitive junction is high enough to turn on the thyristor. A high value
of charging current may destroy the thyristor hence the device must be protected
against high dv/dt.
5. Gate triggering: -
This method of thyristor triggering is widely employed because of ease C8
control over the thyristor gate triggering of thyristor allows us to turn of the thyristor
whenever we wish. Here we apply a gate signal to the thyristor. Forward biased
thyristor will turn on when gate signal is applied to it. Once the thyristor starts
conducting, the gate loses its control over the device and the thyristor continues to
conduct. This is because of regenerative action that takes place within the thyristor
when gate signal is applied.
When the thyristor is forward biased, and a gate signal is injected by applying
positive gate voltage is applied between gate and cathode terminals, then the
thyristor is turned on.

Fig. shows the waveform of anode current after the application of gate signal.
ton is the turn on delay time. The turn on delay time is the time interval between the
application of gate signal and conduction of thyristor. The turn on delay time ton is
defined as the time interval between 10% of steady state gate current 0.1Ig and 90%
of steady state thyristor on state current 0.9IT.ton is the sum of delay time td and rise
time tr. The delay time td is defined as the time interval between 10% of steady state
gate current (0.1 Ig) and 10% of on state thyristor current (0.1IT). The rise time tr is
defined as the time taken by the thyristor anode current from 10% of thyristor on
state current (0.1IT) to 90% of on state thyristor current (0.9IT).
While designing gate thyristor triggering circuit following points should be
kept in mind.
1. When thyristor is turned on the gate signal should be removed immediately.
A continuous application of gate signal even after the triggering on and thyristor
would increase the power loss in the gate junction.
2. No gate signal should be applied when thyristor is reversed biased;
otherwise, thyristor
3. The pulse width of the gate signal should le longer than the time required
for the anode current to rise to the holding current value IH.
Thyristor cannot be turned off by applied negative gate signal. To stop the
conduction of the thyristor we have to bring the anode current flowing through the
thyristor to a level below holding current level. Holding current may be defined as
the minimum anode current required to maintain the thyristor in the on state without
gate signal below which the thyristor stops conduction.
If we want to turn on the thyristor, the current flowing through the thyristor
must be greater than latching current of the thyristor. Latching current is the
minimum anode current required to maintain the thyristor in the on state with at gate
signal. Here we should note that even the thyristor anode current falls below latching
current (once it is turned on and gate signal is removed) thyristor does not stop
conduction. But if it falls below holding current (Latching current is more than
holding current) then thyristor turn off.

Switching or ON OFF Characteristics of SCR | Turn ON

Turn OFF Time
Turn ON Time of SCR
A forward biased thyristor can be turned on by applying a positive voltage
between gate and cathode terminal. But it takes some transition time to go from
forward blocking mode to forward conduction mode. This transition time is called
turn on time of SCR, and it can be subdivided into three small intervals as delay time
(td) rise time(tr), spread time(ts).
Delay Time of SCR
After application of gate current, the thyristor will start conducting over a very
tiny region. Delay time of SCR can be defined as the time taken by the gate current
to increase from 90% to 100% of its final value Ig. From another point of view, delay
time is the interval in which anode current rises from forward leakage current to 10%
of its final value and at the same time anode voltage will fall from 100% to 90% of
its initial value Va.

Rise Time of SCR

Rise time of SCR in the time taken by the anode current to rise from 10% to
90% of its final value. At the same time anode voltage will fall from 90% to 10% of
its initial value Va. The phenomenon of decreasing anode voltage and increasing
anode current is entirely dependent upon the type of the load. For example, if we
connect a inductive load, voltage will fall in a faster rate than the current increasing.
This is happened because induction does not allow initially high voltage change
through it. On the other hand, if we connect a capacitive load, it does not allow initial
high voltage change through it, hence current increasing rate will be faster than the
voltage falling rate.

High increasing rate of dia/dt can create local hot spot in the device which is
not suitable for proper operation. So, it is advisable to use a inductor in series with
the device to tackle high dia/dt. Usually value of maximum allowable di/dt is in the
range of 20 to 200 A per microsecond.
Spread Time of SCR
It is the time taken by the anode current to rise from 90% to 100% of its final
value. At the same time the anode voltage decreases from 10% of its initial value to
smallest possible value. In this interval of time conduction spreads all over the area
of cathode and the SCR will go to fully ON State. Spread time of SCR depends upon
the cross-sectional area of cathode.

Turn OFF Time of SCR

Once the thyristor is switched on or in other point of view, the anode current
is above latching current, the gate losses control over it. That means gate circuit
cannot turn off the device. For turning off the SCR anode current must fall below
the holding current. After anode current fall to zero we cannot apply forward voltage
across the device due to presence of carrier charges into the four layers. So, we must
sweep out or recombine these charges to proper turn-off of SCR. So, turn off time
of SCR can be defined as the interval between anode current falls to zero and device
regains its forward blocking mode. On the basis of removing carrier charges from
the four layers, turn off time of SCR can be divided into two-time regions,
1. Reverse Recovery Time.
2. Gate Recovery Time

Reverse Recovery Time

It is the interval in which change carriers remove from J1, and J3 junction. At
time t1, anode current falls to zero and it will continue to increase in reverse direction
with same slope (di/dt) of the forward decreasing current. This negative current will
help to sweep out the carrier charges from junction J 1 and J3. At the time t2 carrier
charge density is not sufficient to maintain the reverse current hence after t 2 this
negative current will start to decrease. The value of current at t 2 is called reverse
recovery current. Due to rapid decreasing of anode current, a reverse spike of voltage
may appear across the SCR. Total recovery time t3 - t1 is called reverse recovery
time. After that, device will start to follow the applied reverse voltage and it gains
the property to block the forward voltage.
Gate Recovery Time
After sweeping out the carrier charges from junction J1 and J3 during reverse
recovery time, there still remain trapped charges in J2 junction which prevent the
SCR from blocking the forward voltage. This trapped charge can be removed by
recombination only and the interval in which this recombination is done, called gate
recovery time.
Rating of SCR or Thyristor
Thyristor ratings or SCR ratings are very much required for operating it in
a safe zone. The reliable operation can be done when a thyristor does not violate its
voltage and current rating during working period. A thyristor, or SCR may have
several ratings, such as voltage, current, power, dv/dt, di/dt, turn on time, turn off
time, etc. Generally, these ratings are specified in the data sheet given by
manufacturer.

Anode Voltage Rating

This rating gives us a brief idea about withstanding power of a thyristor in
forward blocking made in the absence of gate current.
Peak Working Forward Blocking or Forward OFF State Voltage (VDWM)
It specifies the maximum forward voltage (positive voltage that applied across
anode and cathode) that can be withstand by the SCR at the time of working.
Peak Repetitive Forward Blocking Voltage (VDRM)
It specifies the peak forward transient voltage that a SCR can block repeatedly
or periodically in forward blocking mode. This rating is specified at a maximum
allowable junction temperature with gate circuit open. During commutation process,
due to high decreasing rate of reverse anode current a voltage spike Ldi/dt is
produced which is the cause of VDRM generation.
Peak Non-Repetitive or Surge Forward Blocking Voltage (VDSM)
It is the peak value of the forward transient voltage that does not appear
periodically. This type of over voltage generated at the time of switching operation
of circuit breaker. This voltage is 130 % of VDRM), although it lies under the
forward break over voltage (VBD).
Peak Working Revere Voltage (VRWM)
It is the maximum reverse voltage (anode is negative with respect to cathode)
which can be withstand by the thyristor repeatedly or periodically. It is nothing but
peak negative value of the AC sinusoidal voltage.
Peak Repetitive Revere Voltage (VRRM)
It is the value of transient voltage that can be withstand by SCR in reverse bias at
maximum allowable temperature. This reason behind the appearance of this voltage
is also same as VDRM.
Peak Non-Repetitive Revere Voltage (VRSM)
It implies the reverse transient voltage that does not appear repetitively.
Though this voltage value is 130% of VRRM, it lies under reverse break over
voltage, VBR. Forward ON State voltage Drop (VT) This is the voltage drop across
the anode and cathode when rated current flows through the SCR at rated junction
temperature. Generally, this value is lie between 1 to 1.5 volts.

Forward dv/dt Rating

When we apply a forward voltage to the thyristor Junction J1 and J3 are
forward biased whereas junction J2 is reverse biased and hence it acts a capacitor.
So due to Cdv/dt a leakage current flows through the device. This value of current
will increase with the value of dv/dt. One thing we must keep in mind that voltage
value is not the reason behind flowing of leakage current, the reason is the rate of
voltage increasing. The value of capacitance of the junction is constant hence when
dv/dt increases to a suitable value that leakage current occurs a avalanche breakdown
across junction J2. This value of dv/dt in called forward dv/dt rating which can turn
on the SCR without help of gate current. In practice it is not suitable to apply high
dv/dt due to high temperature malfunction of SCR.
Voltage Safety Factor of SCR (VSF)
It is described as the ratio of peak repetitive reverse voltage (VRRM) to the
maximum value of input voltage.
Finger Voltage of SCR (VFV)
Minimum value of voltage which must be applied between anode and cathode
for turning off the device by gate triggering. Generally, this voltage value is little
more than normal ON state voltage drop.

Current Rating of SCR

We all know that a thyristor, hence a SCR is made of semiconductor which is
very much thermal sensitive. Even due to short time over current, the temperature of
the device may rise to such a high value that it may cross its maximum allowable
limit. Hence there will be a high chance of permanent destruction of the device. For
this reason, current rating of SCR is very essential part to protect the SCR.
Maximum RMS Current Rating (IRMS)
Generations of heat in the device present where resistive elements are present
in the device. Resistive elements such as metallic joints are totally dependent upon
rms current as power loss is IRMS2R, which is converts to heat, hence cause of
temperature rise of the device. Hence, IRMS rating of the thyristor must be a suitable
value so that maximum heat capability of SCR cannot exceed.
Maximum Average Current Rating (IAV)
It is the allowable average current that can be applied safely such that
maximum junction temperature and rms current limit cannot be exceeded. Generally,
manufacturer of SCR, provides a characteristic diagram which shows IAV as a
function of the case temperature IC with the current conduction angle φ as a
parameter. This characteristic is known as "forward average current de-rating
characteristic".
Maximum Surge Current (ISM)
If a thyristor operates under its repetitive voltage and current ratings, its
maximum allowable temperature is never exceeded. But a SCR may fall into a
abnormal operating condition due to fault in the circuit. To overcome this problem,
a maximum allowable surge current rating is also specified by manufacturer. This
rating specifies maximum non repetitive surge current, that the device can withstand.
This rating is specified dependent upon the number of surge cycle. At the time of
manufacturing at least three different surge current ratings for different durations are
specified. For example, ISM = 3,000A for 1/2 cycle

ISM = 2,100A for 3 cycles

 ISM = 1,800A for 5 cycles

A plot between ISM and cycle numbers are also provided for dealing with the
various cycle surge current.

I2R Rating of SCR

This rating is provided to get an idea about over-voltage tackle power of a
thyristor. The rating in term of A2S is the measure of energy that can be handled by
a thyristor for a short while. An electrical fuse I2R rating must be less than that of
thyristor to be used to protect it.

di/dt Rating of SCR

While, SCR is getting turn on, conduction stays in a very small area nearer to
the gate. This small area of conduction spreads throughout the whole area of the
junctions. But if spreading velocity of the charge carriers will be smaller than the
di/dt then local hot spot may arise nearer to the gate which may destroy the device.
To overcome this problem a maximum rate of rise of current, di/dt is also specified
during manufacturing of the devices.

Latching Current of Thyristor

This is the rating of current below which the SCR can't be turned on even the
gate signal is applied. That means this much anode current must rise to turn on the
device. The gate pulse must be continuous until anode current is greater or equal to
latching current of thyristor otherwise the device will fail to be turned on.

Holding Current of Thyristor

This is the rating of current below, which anode current must fall to turn off
the device.

Gate Specification of SCR

Gate Current to Trigger (IGT)
This is the value of gate current below which device cannot be turned on. This value
of current specified at a particular forward break down voltage.

Gate Triggering Voltage (VGT)

This is the value of minimum gate voltage that must be a acquired by the gate
circuit. for proper turn on of the SCR. This voltage value is also specified at a
particular forward breakdown voltage like IGBT.

Non-Triggering Gate Voltage (VNG)

This is the maximum value of gate circuit source voltage below which the
device must be in off state. All unwanted noise signals must lie under this voltage to
avoid unwanted turn on of the device.

Peak Reverse Gate Voltage (VGRM)

This is the value of maximum reverse voltage which can be applied across the
cathode and gate.

Average Gate Power Dissipation (PGAR)

This is the value of average power dissipation which cannot be exceeded by a gate
circuit for a gate current pulse wider than 100 microseconds.

Peak Forwarded Gate Current (IGRM)

This is the rating of maximum forward gate current that should not be
exceeded to reliable and safe operation.

Gate Characteristics of SCR or Thyristor

Gate characteristic of thyristor or SCR gives us a brief idea to operate it within
a safe region of applied gate voltage and current. So, this is a very important
characteristic regarding thyristor. At the time of manufacturing each SCR or
thyristor is specified with the maximum gate voltage limit (Vg-max), gate current
limit (Ig-max) and maximum average gate power dissipation limit (Pgav). These
limits should not be exceeded to protect the SCR from damage and there is also a
specified minimum voltage (Vg-min) and minimum current (Ig-min) for proper
operation of thyristor.

A gate non triggering voltage (Vng) is also mentioned at the time of manufacturing
of the device. All noises and unwanted signals should lie under this voltage to avoid
unwanted turn on of the thyristor.
 Curve 1 represents the lowest voltage values that must be applied to turn on
the SCR and curve 2 represents the highest values of the voltage that can safely
applied. So, from the figure we can see the safety operated area of SCR.
Now, from the triggering circuit, we get, Es = Vg + Ig*Rs Where, Es = gate source
voltage Vg = gate cathode voltage Ig = gate current Rs = gate source resistance
A load line of gate source voltage is drawn as AD where OA = Es and OD = Es/Rs
which is trigger circuit short circuit current. Now, let a VI characteristic of gate
circuit is given by curve 3. The intersection points of load line (AD) and curve 3 is
called as operating point S. It is evident that S must lie between S1 and S2 on the
load line. For decreasing the turn ON time and to avoid unwanted turn ON of the
device, operating point should be as close to Pgav as possible. Slop of AD = source
resistance Rs. Minimum amount of Rs can be determined by drawing a tangent to
the Pgav carve from the point A.