ELECTRONICS DEVICES

AISSCE 2000
1. Explain how the depletion region and barrier potential are formed in a p-n junction diode. (3)

AISSCE 2002
1. How does the width of the depletion region of
a p-n junction diode vary, if the reverse bias
applied to it decreases ? (1)
2. In the following diagrams, write of the
following diodes are forward biased and which
are reverse biased. (2)

AISSCE 2005
1. (a)Explain briefly with the help of a circuit diagram how V-I characteristics of a p-n junction diode are
obtained are obtained in (i) forward bias, and (ii) reverse bias.
(b)A photodiode is fabricated from a semiconductor with a band gap of 2.8 eV. Can it detect wavelength
of 600 nm ? Justify. (5)

AISSCE 2006
1. Explain (i) forward biasing, (ii) reverse biasing of a p-n junction diode. With the help of a circuit diagram,
explain the use of this device as a half- wave rectifier. (3)

AISSCE 2007
1. Two semiconductor materials X and Y shown in the figure , are made by doping
germanium crystal with indium and arsenic resp. The two are joined end to
end and connected to a battery as shown.
(i) Will the junction be forward biased or reverse biased ?
(ii) sketch a V-I graph for this arrangement. (2)

AISSCE 2008
1. State the reason, why GaAs is most commonly used in making of a solar cell. (1)

AISSCE 2009
1. With the help of a suitable diagram, explain the formation of depletion region in a p-n junction. How does
its width change when the junction is (i) forward biased, (ii) reverse biased ? (3)

AISSCE 2010
1. (a) Draw the circuit diagrams of a p-n junction diode in (i) forward bias, (ii) reverse bias. How are these
circuits used to study the V – I characteristics of silicon diode? Draw the typical V-I characteristics.
(b) What is a light emitting diode (LED)? Mention two important advantages of LEDs over conventional
lamps. (5)

AISSCE 2011
1. What happens to the width of depletion layer of a p-n junction when it is (i) forward biased, (ii) reverse
biased? (1)
2. Draw a labeled diagram of full wave rectifier circuit. State its working principle. Show the input-output
waveforms. (3)
AISSCE 2012
1. Describe briefly, with the help of a diagram, the role of the two important processes involved in the
formation of a p-n junction.
AISSCE 2013
1. Draw V- I characteristics of a p-n junction diode. Answer the following questions, giving reasons : (i) Why is
the current under reverse bias almost independent of the applied potential upto a critical voltage? (ii)Why
does the reverse current show a sudden increase at the critical voltage ? 2
AISSCE 2014
1. Explain, with the help of a circuit diagram, the working of a p-n junction diode as a half wave rectifier. 2
2. Write any two distinguishing features between conductors, semiconductors and insulators on the basis of
energy band diagrams. 3

AISSCE 2015
1. With the help of a circuit diagram explain the working of a junction diode as a full wave rectifier. Draw its
input and output waveforms. Which characteristic property makes the junction diode suitable for
rectification? (3)
AISSCE 2016
1. Name two important processes that during the formation of a p-n junction. (ii) Draw the circuit diagram of
a full wave rectifier along with the input and output waveforms. Briefly explain how the output
voltage/current is unidirectional. (3)
2. Distinguish between a conductor and a semiconductor on the basis of energy band diagram. (2)

AISSCE 2017
1. (a) In the following diagram ‘S’ is a semiconductor. Would you increase or decrease the value of R to
keep the reading of the ammeter A constant when S is heated ? Give reason for your answer.
(b) Draw the circuit diagram of a photodiode and explain its working. Draw its I – V characteristics. (3)

AISSCE 2018
1. A student wants to use two p-n junction diodes to convert alternating current into
direct current. Draw the labeled circuit diagram she would use and explain how it
works. (2)

AISSCE 2019
1. Identify the semiconductor diode whose V-I characteristics are shown in figure.

2. Give reason to explain why n and p regions of a Zener diode

are heavily doped. Find the current through the Zener diode in
the circuit given below. (Zener breakdown voltage is 15 V)

AISSCE 2020
1. How does an increase in doping concentration affect the width of depletion region of a p-n junction diode
? (1)
2. Why cannot we use Si & Ge in fabrication of visible LEDs ? (1)
3. Explain the terms ‘depletion layer’ and ‘potential barrier’ in a p-n junction diode. How are the(a) width of
depletion layer, and (b) value of potential barrier affected when the p-n junction is forward biased ? (2)
4. With the help of a simple diagram, explain the working of a silicon solar cell, giving all three basic
processes involved. Draw its I-V characteristic. (SET – 2) (3)
5. Draw the circuit diagram of a full wave rectifier using two p-n junction diodes. Explain its working and
show the input and output voltage variations. (SET – 3) (3)