KA2914A/KA2918 LINEAR INTEGRATED CIRCUIT VIDEO IF+SIF SYSTEM op The KAZS14A, KAZI are sicon monolithic integrated circuits designed tor the VIF and SiF stage in color and BIW television receivers. KAZAA: for Reverso AGC type KAZE for Forward AGC type FUNCTIONS | VIF ‘* Three controlled IF amplifier stages ideo demodulator controlled by picture carrier * Black noise and white noise inverter» Peak AGC, ‘+ DC ampliier for RF AGC out SIF ‘+ Three differential IF amplfir stages + Phase detector ‘+ DC controlled attenuator ‘+ Audio ampitier stage with NFB terminal FEATURES ORDERING INFORMATION * PIF, SIF, ATT audio driver [Device [Package | Operating Temperature * 2 chip color TV systom Is possible with the KAZ153 or KA2154/cazoiaa oI vase | 2401 | -20 ~ ¥05rc * High gain, wide band IF amplifier + AGC characteristics with excellent stability + Excellent OG/DP characteristics Excellent SIN characteristics due to del + Negative video output signal ‘+ Switch off the video part with VTR SW SIF + Excellent limiter characteristics + Excellent attenuator characteristics & SAMSUNG aKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT BLOCK DIAGRAM Pate NOSE a Gio RSW ENT Sele Sut Sho ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Value Unit Supply Voltage Vee 18 v Terminal 11 Open Voltage Vn 18 v Video DC Output Current hs 6 ma ‘Audio DC Output Current bs 3 mA Terminal 2 Voltage Ve 5 v Power Dissipation (Note) Py a bi Operating Temperature Too -20~65 °C Storage Temperature Tos = 85~ 150 cc Note: Derated above T. =25°C in the proportion of 12.8 mIRC. SAMSUNG mzKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT ELECTRICAL CHARACTERISTICS PIF Section (Ta=25°C, Voc =12V fy =45.75MHz, f,=41.25MHz) f mst: | smtns | etcoatne [|p [ox] uo Len ee = [108] 120/132 | Supply Curent ee = so | 7% Jos [mal 4 - “| SWy: L(RAZOTAAY ~ 4 ~ Video 0¢ Output Voltage Vs SW 2 xaos) s2jssise! v | 1 = game Raza AT — Vo. SW 2(KA2918) 53/68/83) Vv 1 | AFTDC ouput votage i 1M gray | | Va +3 (KA2916) s3jeales| v4 _4 Sw. fall pY sw. | (KAZOTAR) — | AFTOC ost votage Vow St glkaanre) -1s}o is} vj 4 | TT 7 gw,: 1 (KA2gt4ay — | RFAGC Residual Output volage Vn Sat | SY 2 kAzO18) L-[- jes] vit aed near (kAzo1ey y 1. ha RF AGC Leak Current | | SW 2(azeren) -)alrl mys _— ain = “pec Range ce ec ‘SYNC TIP Lovel Voltage w3r | (Notes) 2 a vn Max) a 7 | Max. IF Input Voltage PIF (Note 4) 2 White Noise Threshold Level wy | totes) seleziee! v | 2 | | Ws) — 4 Noise Ciamp Level | Or | (ates) s7j4ijas) vie [ve @ SAMSUNG 22sKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT —— ELECTRICAL CHARACTERISTICS PIF Section (Ta=25°C, Voc =12V, fp=45.75MHz, fs =41.25MHz) ee t t | Black Noise Threshold Level |v (Note 5) —— |e Black Noise Clamp Level | (0%) | (Noto) ‘ae Frequency Response fn | Wate) Suppression of Carrer CL_—_ (Note 7) Suppression of 2nd Carior | le ___| (Noto 8) 820KHe Boat Lovel two (Note) | Diterenval Phase OP (Note 10) " Diferentit Gain G__! (Note 10) (Vl VIF input impedance a oe (ote 1) UV AeTsensiivty FV | (Note 12) upper Yet 1) AFT Output Votage ——_-— Vee quate 13) 18290 pk fF AGC Mae SH pags ‘Available Current i SW): 2 SWa:1(KAZ9T8), RF AGC Delay Setting Range | Vx Delay | (Note 14) [AFT Band with aFw (Note 13) | video Output Voltage sour, (Note 15) T 22s | 250 275 Vv 2 SAMSUNG =KA2914A/KA2918 LINEAR INTEGRATED CIRCUIT ELECTRICAL CHARACTERISTICS, SIF Section (Ta =25°C, Vcc =12V, fp=45.75MHz, fs=41.25MHz) Geseweie [mtn Tene Ton] 9] Unt [a SIF Output Voltage: Sour (Note 16) 200 | 400 | 600 Wine) S| a a ae rtm inign | ancas—Wiw hRpem a Recovered Output Voltage Total Harmonic Distortion Max. Audio Output Voltage SIF Input Impedance DET Output impedance Terminal 21 DC Voltage — a Terminal 1 DC Volume Gain ATT Characteristics | Signal Leakage AF AMP. Gain [AF AMP. Distortion ‘AF AMP. Max. Output Voltage ‘AF Output DC Voltage THO oe [Gy AF THD AF our Max. | (Note 21) THD ar 5% 1820 Ys {SIF IN: f=4.5MH2 AM 309%, Vin = 10048 L 05 075° =| Vm 8 | SIF IN: f=4.5MH qT fm=400H2,af=£25KHz 1.00 =o} OB Vw 800Bu SIFIN:t=44~46MHz | 40) — — | Von | 8 95 | 44 53 | [4s| e072 v4 eee sal : feoler| 7a? v feo;- -1e | 1 |-ss|-asi-r5i «8 | 10 (Note 20) 3.0 | Vie | (vote 20 __[= [aot =F 8 | Paw = Vp 00H | Sis On -l1s'- % | ATT: -2648 Setting | sw: 5 (eer i 2 (kA2916) err tates) va sw 2 * Read the 400Hz component of Va at Ps with Ry =0, set Ra So that Vi 19) ** Read the 400Hz component of V, of terminal t (V1) P, with R, 12 Vx (~6dB), then read DC voltage of terminal Set Ra 80 that Vsy =3:16%10~® Va (~$0d8) then read DC vollage & SAMSUNG Electronics: 228KA2914A/KA2918 TEST CIRCUIT 1. DC Characteristic SAMSUNG LINEAR INTEGRATED CIRCUITKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT eee 2. AC Characteristic SAMSUNG arKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT 3. Video Frequency Response and SIF Output = — Bh] ee YO Fig. 4. Inter Modulation MON score. Fig.4 5. DG, DP DDGIOP MEASURING EQUIPMENT signal out Scene Pm] Sreure AATT-ADJUST SYNC TIP LEVEL TO.0C 2.5 Fig. 5 SAMSUNG 220KA2914A/KA2918 6. VIF Input Impedance LINEAR INTEGRATED CIRCUITKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT 8. Yvcum, AMR, Voo, THD, vom [cea = Fig. 8 9. Audio Output Impedance [= Fig. 10. ATT MAX., Garr MIN, Vi, Vi @) Fig. 10 SAMSUNG 2mKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT 1, Yer fn f Fig. tt 12. THDar - {Bre} Bae On, a 2608 Fig. 12 13. Gv AF, voar wax w an mao [eee] Fig. 13, SAMSUNG alKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT TEST CONDITIONS Note Note Note Note Note 1) Vnae (PS EXT. Applying voltage)=11.5V VIF in: f=45.75MHz kHz 30% AM modulation ‘Adjust the VIF input levet v so that the detected output of P15A with high impedance probe will be O8V. ‘and measure the input level 2) Vice =a ‘Measure VIF input level V same as note 1 2A=20 log? (48) 3) VIF IN: (=48.75MH2 OW t6mivims, Measure the DC level of P15 44) VIF IN: f=45.75MHZ APL 100%, 875% AM modulation. PS: open (1) Adjust the VIF input level SOmV. and measure the detacted output level isips {2) Then increase the input level so that the detected output level will be 1.1x vigey and measure the input level 5) Vice =8V VIF in: { =45,75MHz + 10MHz variable or sweep tSmVrms measure the DC level of P15, Note 6) Vice =8V (GR =30d8) SG: 4575MHz OW SGz: 4575 ~ 40MMz variable (1) Setting output of SG, so that the DC level of P15 will be 40V {@) Setting output off SG, (45.75MH2) so that the AC level of P15 will be 0.5V0 (G) Decreasing frequency of SG; until the AC level of P15 will be 0.35V,, (~3dB of O.5V,,) then read sce F fow = 45:75-F MHZ && SAMSUNG ElectronicsKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT Note 7) SG,: 4575MHz, kHz 8096 AM modulation 100nivrms Ga, S63; off Setting Vaoc 80 that the output AC level of PIS will be 2.7Vpo, Measure CL of P15 after setting 10 0% AM of SG, o-20 oa (8) Note 8) Measure Izy of P16 the same as note 7 Note 9) Vico =8V ‘8G: 45:75MHz (P: picture) 1oOmvems ‘SGy: 41.25MHz(S: sound) 32mrVrms (~1058 of SG,) SSGi: 42.17MHz (C: chroma) darvems (—1048 of SG) (1) Setting Vice $0 thatthe output tip level ower) of PIS will be 20V OC. (2) Measure the level difference (48) between the C-level and 920kH2 level Note 10) Vigc =8V VIF IN: f=48.75MHz video signal (RAMP) 875% AM 100m, Sotting ATT so that the SYNC TIP level of P1S wil be 25V DC. ‘Meagure OP and DG Note 11) Vyoc=5V 1245 75MH2 Measure Pix, Cn Note 12) AFT sensitivity AF/A (Vis) (1) INT, AGC (PS open) (2) VIF input: 45.75MHz:£ 10MHz, CW 1SmVims (8) Read the trequency (t) of VIF when VirVie= —IV (@) Read the frequency (f) of VIF when VisVe=1V then calculate SFA VeVie=l fle Note 13) AF w, Viau, Via Vins Vie (1) INTAGC (5 open) (2) VIFIN: 45:75MHz10MH2 OW 1SMVems (9) 8pF at Pin 16 should be shorted ‘4) Read the frequency (f, oF f) when the Vs or Vs is reduced to 90% of the level of A or B with varying the frequency. Then the band width is the difference from center frequency (ta). vo ven & SAMSUNG aKA2914A/KA2918 LINEAR INTEGRATED CIRCUIT Note 14) PS: Open VIF IN: 4875MHz CW 20mVrms. (1) Adjust the voltage of Terminal 3 s0 that the voltage of Torminal 4 will be 60V DC (2) Measure the voltage of Terminal 3 Note 18) PS: Open VIF in: 45.75MHz 100% APL 87.5% AM modulation signal amplitude S0mV,. Measure the detected ‘output voltage (White peak to sync tip) Note 16) PS: Open. 'SG): 45:75MHz CW 10onivims SGz: 41.25MHz OW 26nivemss Measure SIF (45MHz) output voltage at P1S Note 17) SIF IN: f=45MHz FM foo =400Hz f= 25KH2, (1) Adjust the SIF input levet 100mV,, and measure the detected output level vos {2) Then decrease the input level so thal the dete ted output level willbe 3B down of Vos and measure the in- putlvel Note 18) Output impedance (1) SIFIN: f=45MH2 twoo=400Hz, f= 425kHz, 80d8 (2) At P23 read the Vc, at R=, then read the Fi, when the recovered output becomes Vei2 by varying the Rx. The Rx is the output impedance. Note 19) AFT MAX (1) SIF in: f24SMHz, foo =400H2, t=425KH2, 60485. (2). Read the 400Hz component of Vj at P2 with Rq=0, thon read Vi‘ with y=|o0 ATT MAX=20 fog Vo Va" Note 20) Vor (1) SIF IN: =4.5MHz, fyoo = 400Hz, Af 25kHz, B0d8y (2) Read the 400Hz component at 3 Note 21) Gy AF (1) Apply 400Hz 01Vrms signal to P2 {2) Read the output vokage at P3. @ SAMSUNG 24KA2914A/KA2918 LINEAR INTEGRATED CIRCUIT TYPICAL APPLICATION CIRCUIT @ SAMSUNG 2s