HSCB2307

P-Ch 20V Fast Switching MOSFETs

Description Product Summary

The HSCB2307 is the high cell density trenched P- VDS -20 V

ch MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck RDS(ON),typ 15 mΩ
converter applications.
The HSCB2307 meet the RoHS and Green Product ID -8 A
requirement with full function reliability approved.

⚫ Super Low Gate Charge

DFN2*2-6L Pin Configurations
⚫ Green Device Available
⚫ Excellent CdV/dt effect decline
⚫ Advanced high cell density Trench
technology

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage -20 V
VGS Gate-Source Voltage ±12 V
ID@TA=25℃ Continuous Drain Current, VGS @ -4.5V1 -8 A
ID@TA=70℃ Continuous Drain Current, VGS @ -4.5V1 -6 A
IDM Pulsed Drain Current2 -24 A
PD@TA=25℃ Total Power Dissipation3 3.5 W
PD@TA=70℃ Total Power Dissipation3 2.2 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-Ambient 1 --- 36 ℃/W
RθJC Thermal Resistance Junction-Ambient 1 --- 6.5 ℃/W

www.hs-semi.cn Ver 2.0 1

 HSCB2307
P-Ch 20V Fast Switching MOSFETs

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃
VGS=-4.5V , ID=-8A --- 15 18
RDS(ON) Static Drain-Source On-Resistance2 m
VGS=-2.5V , ID=-6A --- 18.5 23
VGS(th) Gate Threshold Voltage -0.45 -0.6 -1.2 V
VGS=VDS , ID =-250uA
△VGS(th) VGS(th) Temperature Coefficient --- 3.95 --- mV/℃
VDS=-16V , VGS=0V , TJ=25℃ --- --- -1
IDSS Drain-Source Leakage Current uA
VDS=-16V , VGS=0V , TJ=55℃ --- --- -5
IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=-10V , ID=-8A --- 32 --- S
Qg Total Gate Charge (-4.5V) --- 17 ---
Qgs Gate-Source Charge VDS=-10V , VGS=-4.5V , ID=-8A --- 4.3 --- nC
Qgd Gate-Drain Charge --- 4.3 ---
Td(on) Turn-On Delay Time --- 23 ---
Tr Rise Time VDD=-10V , VGS=-4.5V , --- 31 ---
ns
Td(off) Turn-Off Delay Time RG=3.3, ID=-3A --- 70 ---
Tf Fall Time --- 50 ---
Ciss Input Capacitance --- 2100 ---
Coss Output Capacitance VDS=-10V , VGS=0V , f=1MHz --- 489 --- pF
Crss Reverse Transfer Capacitance --- 304 ---

Diode Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit

IS Continuous Source Current1,4 --- --- -8 A
VG=VD=0V , Force Current
ISM Pulsed Source Current2,4 --- --- -24 A
VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V

Note :
1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

www.hs-semi.cn Ver 2.0 2

 HSCB2307
P-Ch 20V Fast Switching MOSFETs
Typical Characteristics

www.hs-semi.cn Ver 2.0 3

 HSCB2307
P-Ch 20V Fast Switching MOSFETs

www.hs-semi.cn Ver 2.0 4

 HSCB2307
P-Ch 20V Fast Switching MOSFETs

www.hs-semi.cn Ver 2.0 5