, One.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

Silicon NPN Power Transistor BDY56

DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-
: hFE=20-70@lc = 4A
• Collector-Emitter Saturation Voltage-
: VCE<sat)= 1.1 V(Max)@ lc = 4A <"| ^_ I «n

APPLICATIONS
3 PIN
• Designed for general-purpose switching and amplifier 1.BASE

applications 2. EMITTER
3. COLLECT OR (CASE)
TO-3 package

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

SYMBOL PARAMETER VALUE UNIT

t
— ._ *
I

VCBO Collector-Base Voltage 150 V

i i C

IE ] !
VCEO Collector-Emitter Voltage 120 V >PL
\f
VEBO Emitter-Base Voltage 7 V r 139
s \t ct
Ic Collector Current-Continuous 15 A $A \^j ^/'
Xt/tN^X

£-JL_.$ i B
1' 1
IB Base Current 7 A
430
iniu
PC Collector Power Dissipation@Tc-25 C 117 W DM WIN MAX
A 39' 0
B 2S3C 26.67
Tj Junction Temperature 200 •c C 7.80 8.30
D 090 (.10
Tstg Storage Temperature -65-200 °c E MO 1.60
G 1092
H 546
K 1t40 1350
THERMAL CHARACTERISTICS L 1675 iros
H 1940 1962
SYMBOL PARAMETER MAX UNIT J3 400 4 JO
U XJX10 3030
V 430 4,50
Rth j-c Thermal Resistance.Junction to Case 1.5 °c/w

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 Silicon NPN Power Transistors BDY56

ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN MAX UNIT

VcEO(SUS) Collector-Emitter Sustaining Voltage lc=200mA; IB= 0 120 V

VcE(sat)-i Collector-Emitter Saturation Voltage |c= 4A; IB= 0.4A 1.1 V

VcE(sat)-2 Collector-Emitter Saturation Voltage I C =10A;I B =3.3A 2.5 V

VeE(on) Base-Emitter On Voltage lc= 4A; VCE= 4V 1.8 V

ICEO Collector Cutoff Current VCE= 60V; IB= 0 0.5 mA

VCE=150V;VBE=-1.5V 3.0
Icex Collector Cutoff Current mA
VCE= 150V; VBE=-1.5V, TC=150"C 30

IEBO Emitter Cutoff Current VEB= TV; lc= 0 3.0 mA

hpE-1 DC Current Gain lc= 4A; VCE= 4V 20 70

hFE-2 DC Current Gain lc=10A;V CE =4V 10

fl Current Gain-Bandwidth Product lc=1A;V CE =4V;f=10MHz 10 MHz

Switching Times

ton Turn-On Time lc= 5A; ls= 1A 0.5 us

toff Turn-Off Time I C =5A;I B 1= 1A; ls2=-0.5A 2.0 M S