Course Code : PHT 101 ITSJ/RW – 17 / 1007

First / Second Semester Bachelor of Engineering Examination

ENGINEERING PHYSICS

Time : 3 Hours ] [ Max. Marks : 60

Instructions to Candidates :—
(1) All questions are compulsory.
(2) Draw diagrams and write equations wherever appropriate.
(3) Assume suitable data wherever necessary.

1. (a) Explain why interference of waves emanating from incoherent light sources
produces uniform illumination on the screen. Give mathematical treatment in
support of this. 3 (CO 1)
(b) Draw a well labelled diagram showing single slit diffraction. Diffraction pattern
is obtained by using a slit of width 0.1 cm. Find the position of the
first dark and next bright fringe with respect to direction of incidence on
the screen located at a distance of 50 cm from the slit. Wavelength of
E.
light used in 5500 A 1 + 2 (CO 1 , 8)
(c) What is selective absorption ? State and explain Malus' Law. A sheet of
a birefringent material is used to convert circularly polarised light of wavelength
E into a plane polarised light. What should be the thickness of this
5890 A
sheet if its two refractive indices are 1.658 and 1.486.
2 + 2 (CO 1 , 8)

2. (a) Explain de Broglie's hypothesis. Is the concept meaningful to microscopic

and macroscopic world equally ? Explain how Bohr's condition for the quantization
of angular momentum is obtained by using de Broglie's idea of matter
waves ? 1 + 1 + 2 (CO 4)
(b) Write down Schrodinger's time dependent wave equation. Write down the
expressions for
(i) Momentum,

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 (ii) Kinetic energy,
(iii) Total energy and
(iv) Potential energy operators ? 1 + 2 (CO 4)

(c) A marble is kept in a box of width 10 cm. The difference between

its first two energy states is 16.5 x 10 – 64 J. What is the mass of the
marble ? What are the wavelengths associated in the two states ?
3 (CO 4 , 8)

3. (a) Draw a well – labelled energy level diagram of Ruby Laser, clearly showing
(i) Ground state
(ii) Pumping level
(iii) Metastable states along with their life – times. Why this lasing
system is inefficient ? 3 (CO 2)

(b) E has a band width of 11.6 A

A yellow emission of wavelength 5893 A E. Find
its coherence length and degree of monochromaticity. 3 (CO 2 , 8)
(c) What are communication windows ? State the losses in an optical fiber
taking place at various wavelengths.
An engineer is trying to design an optical fiber for single mode operation.
The core refractive index and diameter of the fiber are 1.48 and 5 µm,
respectivley. What should be the NA of the fiber so as to support single
mode operation at 0.6 µm wavelength ? What should be the cladding
refractive index ? 2 + 2 (CO 3 , 8)

4. (a) Explain how using sol – gel technique, a dense film can be obtained.
2 (CO 7)
(b) Draw a well – labelled diagram of graphene sheet. Explain its features. Write
down the expressions for energy and wave function for the sheet.
1 + 2 + 2 (CO 7 , 8)
(c) Explain the principle of STM. Draw diagram. 3 (CO 7)

5. (a) Design a velocity selector for a beam of positively charged ions. Draw
diagram. Write the expression for the selected velocity. 2 + 1 (CO 6)

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 (b) What will happen if :—
(i) A linearly time varying voltage is externally applied to Y – plates
and sinusoidal voltage is applied externally to X – plates of CRO
operated in XY mode.
(ii) Sinusoidal voltages having frequencies in the ratio of 2 : 1 are
respectively applied to X and Y – plates of CRO, operated in
XY mode. Draw diagrams. 2 + 2 (CO 6 , 8)

(c) Explain the role of electric and magnetic field in imparting high velocities
to the particles in cyclotron. 3 (CO 6)

6. (a) Define Fermi energy. Write the expression for Fermi – Dirac distribution function.
What happens when the temperature of an extrinsic semiconductor changes
from room temperature to the high temperatures ? Draw a well labelled
plot of Log σ vs 1 / T. Showing intrinsic range, saturation range and extrinsic
range. 2 + 3 (CO 5)

(b) An N – type semiconductor has 5 x 1021 dopants / m3.

Calculate :—
(i) Majority carrier concentration
(ii) Minority carrier concentration and
(iii) Electrical resistivity of the semiconductor. Given that the intrinsic
carrier concentration of the host semiconductor is 2 x 10 16 / m 3 .
The electron and hole mobilities are 0.135 m 2 / Vs and
0.048 m 2 / Vs. 5 (CO 5 , 8)

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