STS3DPF20V

DUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8

STripFET™ POWER MOSFET

TYPE VDSS RDS(on) ID

STS3DPF20L 20 V <0.11 Ω 3A
■ TYPICAL RDS(on) = 0.090 Ω @ 4.5 V
■ TYPICAL RDS(on) = 0.1 Ω @ 2.7 V
■ STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
■ ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)

s)
DESCRIPTION
This Power MOSFET is the latest development of
SO-8

c t(
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
d u
shows extremely high packing density for low on-
r o
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark- INTERNAL SCHEMATIC DIAGRAM
e P
able manufacturing reproducibility.

le t
APPLICATIONS
■ BATTERY MANAGEMENT IN NOMADIC

s o
EQUIPMENT
■ MOBILE PHONE APPLICATIONS
Ob
) -
( s
u ct
o d
Pr
et e
o l
s
ABSOLUTE MAXIMUM RATINGS
b
O
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 20 V
VDGR Drain-gate Voltage (RGS = 20 kΩ) 20 V
VGS Gate- source Voltage ± 12 V
Drain Current (continuous) at TC = 25°C Single Operation 3 A
ID
Drain Current (continuous) at TC = 100°C Single Operation 1.9 A
IDM(•) Drain Current (pulsed) 12 A
Total Dissipation at TC = 25°C Dual Operation 1.6 W
Ptot
Total Dissipation at TC = 25°C Single Operation 2 W
(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
June 2002 1/8
.
 STS3DPF20V

THERMAL DATA
Rthj-amb (*)Thermal Resistance Junction-ambient Single Operation 62.5 °C/W
Dual Operating 78 °C/W
Tj Thermal Operating Junction-ambient -55 to150 °C
Tstg Storage Temperature -55 to 150 °C
(*) When Mounted on 0.5 in2 pad of 2 oz.copper

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source ID = 250 µA, VGS = 0 20 V

Breakdown Voltage

IDSS Zero Gate Voltage VDS = Max Rating 1 µA

Drain Current (VGS = 0) VDS = Max Rating TC = 125°C 10 µA

IGSS Gate-body Leakage

Current (VDS = 0)
VGS = ± 12 V ±100
)
nA

s
c t(
ON (*)

d u
Symbol Parameter Test Conditions Min.

r o
Typ. Max. Unit
VGS(th) Gate Threshold Voltage

Static Drain-source On
VDS = VGS

VGS = 4.5 V
ID = 250 µA

ID = 1.5 A
e
0.6
P 0.090 0.110
V

Ω
RDS(on)
Resistance VGS = 2.7 V

le
ID = 1.5 A
t 0.100 0.135 Ω

DYNAMIC
s o
Symbol Parameter
Ob
Test Conditions Min. Typ. Max. Unit

gfs (*) Forward Transconductance

-
VDS= 15 V ID = 2 A 7.5 S

(t s)
Ciss Input Capacitance VDS = 25V, f = 1 MHz, VGS = 0 500 pF
Coss Output Capacitance 140 pF
Crss Reverse Transfer
Capacitance
u c 30 pF

o d
Pr
et e
o l
b s
O

2/8
 STS3DPF20V

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(on) Turn-on Delay Time VDD = 10 V ID = 1.5 A 38 ns

tr Rise Time RG = 4.7 Ω VGS = 4.5 V 39 ns
(Resistive Load, Figure 1)
Qg Total Gate Charge VDD= 10V ID= 3A VGS=5V 6.2 8.5 nC
Qgs Gate-Source Charge 1 nC
Qgd Gate-Drain Charge (See test circuit, Figure 2) 1.4 nC

SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit

td(off) Turn-off Delay Time VDD = 10 V ID = 1.5 A 54 ns

tf Fall Time RG = 4.7Ω, VGS = 4.5 V 12 ns
(Resistive Load, Figure 1)

s)
SOURCE DRAIN DIODE
t(
uc
Symbol Parameter Test Conditions Min. Typ. Max. Unit

od
ISD Source-drain Current 3 A
ISDM (•)

VSD (*)
Source-drain Current (pulsed)

Forward On Voltage ISD = 3 A VGS = 0

P r 12

1.2
A

trr Reverse Recovery Time ISD = 3 A di/dt = 100A/µs

te 20 ns
Qrr
IRRM
Reverse Recovery Charge
Reverse Recovery Current
VDD = 15 V

o
Tj = 150°C
(See test circuit, Figure 3) le 13
1.3
nC
A
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
b s
- O
( s )
u ct
Safe Operating Area
o d Thermal Impedance

Pr
et e
o l
b s
O

3/8
 STS3DPF20V

Output Characteristics Transfer Characteristics

s)
t(
Transconductance Static Drain-source On Resistance

u c
o d
P r
te
o le
b s
- O
( s )
u ct
o d
Pr
Gate Charge vs Gate-source Voltage Capacitance Variations

et e
o l
b s
O

4/8
 STS3DPF20V

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

s)
t(
Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature

u c
o d
P r
te
o le
b s
- O
( s )
u ct
o d
.

Pr .

et e
o l
b s
O

5/8
 STS3DPF20V

Fig. 1: Switching Times Test Circuits For Resistive Fig. 2: Gate Charge test Circuit
Load

s)
t(
Fig. 3: Test Circuit For Diode Recovery Behaviour

u c
o d
P r
te
o le
b s
- O
( s )
u ct
o d
Pr
et e
o l
b s
O

6/8
 STS3DPF20V

SO-8 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 1.75 0.068
a1 0.1 0.25 0.003 0.009
a2 1.65 0.064
a3 0.65 0.85 0.025 0.033
b 0.35 0.48 0.013 0.018
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.019
c1 45 (typ.)
D 4.8 5.0 0.188
)
0.196

s
t(
E 5.8 6.2 0.228 0.244
e 1.27 0.050

u c
e3 3.81 0.150

o d
F
L
3.8
0.4
4.0
1.27
0.14
0.015
P r 0.157
0.050
M 0.6
te 0.023
S 8 (max.)

o le
b s
- O
( s )
uct
o d
Pr
ete
o l
b s
O

0016023

7/8
 STS3DPF20V

s)
c t(
d u
r o
e P
le t
s o
Ob
) -
( s
u ct
o d
Pr
et e
o l
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences

b s
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not

Oauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

The ST logo is registered trademark of STMicroelectronics

 2002 STMicroelectronics - All Rights Reserved

All other names are the property of their respective owners.

STMicroelectronics GROUP OF COMPANIES

Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com

8/8
Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

STMicroelectronics:
STS3DPF20V