EEE1001-ELECTRIC CIRCUITS

AND SYSTEMS
LAB ASSESMENT

Name : ADITYA RAHANGDALE

Registration No : 21BCY10003

School :CSE

Slot No :B21+B22+B23

Semester : Winter Semester 2021-2022

 EXPERIMENT NO. 9

EX No. 9: BJT TRANSISTOR IN CE CONFIGURATION

1. AIM:BJT TRANSISTOR INPUT AND OUTPUT CHARACTERISTIC IN CE

CONFUGRATION MODE.

2. SOFTWARE USED:
LTSPICE - XVII

3. SCHEMATIC DIAGRAM/CIRCUIT DIAGRAM

INPUT CHARACTERISTICS BJT TRANSISTOR:-

OUPUT CHARACTERISTICS BJT TRANSISTOR:-

4. THEORY

A bipolar junction transistor is a three-terminal semiconductor device that consists of two p-n

junctions which are able to amplify or magnify a signal. It is a current controlled device. The three
terminals of the BJT are the base, the collector, and the emitter. A signal of a small amplitude

applied to the base is available in the amplified form at the collector of the transistor. This is the

amplification provided by the BJT. Note that it does require an external source of DC power

supply to carry out the amplification process.

5. PROCEDURE.

BJT is a semiconductor device that is constructed with 3 doped semiconductor Regions i.e.

Base, Collector & Emitter separated by 2 p-n Junctions.

Bipolar transistors are manufactured in two types, PNP and NPN, and are available as separate

components, usually in large quantities. The prime use or function of this type of transistor is to

amplify current. This makes them useful as switches or amplifiers. They have a wide application

in electronic devices like mobile phones, televisions, radio transmitters, and industrial control.

Operation of Bipolar Junction Transistor

There are three operating regions of a bipolar junction transistor:

 Active region: The region in which the transistors operate as an amplifier.

 Saturation region: The region in which the transistor is fully on and operates as a switch

such that collector current is equal to the saturation current.

 Cut-off region: The region in which the transistor is fully off and collector current is equal

to zero.
 6. OBSERVATION AND INTERFERENCE

INPUT CHARACTERISTICS:-

The input characteristics are obtained as family of IB -VBE curves at constant VCE. Since the base

emitter junction is forward biased, the IB -VBE (Fig.) characteristics resemble that of a forward

biased junction diode. The increase in VCE causes increase in reverse bias to C-B junction. This

causes the depletion region to widen and penetrate into the base region more reducing effective

base width. This results in less base current to flow and hence increase in VCE causes the

characteristics to shift to the right as shown in Figure.

The reciprocal of the slope of the linear part of the characteristic gives the dynamic input resistance

of the transistor.

OUTPUT CHARACTERISTICS:-
 

These characteristics are obtained as family of IC-VCE at different values of IB. At small values of

VCE, the collector voltage is less than that of base causing CB junction to get forward biased. This

causes the transistor to enter saturation region where both the junctions are forward biased.

 For a given base bias, increase in VCE reduces the forward bias and eventually reverse bias

the CB junction. This now results in narrowing the base width and thereby reducing base

current.

 .This makes the collector current to slightly increase at higher values of VCE causing the

characteristics to exhibit some slope. This is Early effect.

 One can estimate Early voltage by extending the linear portion of Ic curves in the second

quadrant. All these curves are found to meet at VA.

7. RESULT

By point the characteristics of input and output characteristics is correctly defined.