NE592

Video Amplifier
The NE592 is a monolithic, two-stage, differential output,
wideband video amplifier. It offers fixed gains of 100 and 400
without external components and adjustable gains from 400 to 0 with
one external resistor. The input stage has been designed so that with
the addition of a few external reactive elements between the gain
select terminals, the circuit can function as a high-pass, low-pass, or www.onsemi.com
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories, MARKING
DIAGRAMS
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without 8
external components and adjustable gain from 400 to 0 with one 1 SOIC−8 NE592
external resistor. D SUFFIX ALYW
CASE 751 G
Features 1
• 120 MHz Unity Gain Bandwidth
• Adjustable Gains from 0 to 400
14
• Adjustable Pass Band SOIC−14
1 NE592D14G
• No Frequency Compensation Required D SUFFIX AWLYWW
• Wave Shaping with Minimal External Components CASE 751A
1
• MIL-STD Processing Available
• These Devices are Pb−Free and are RoHS Compliant A = Assembly Location
L, WL = Wafer Lot
Applications Y = Year
W, WW = Work Week
• Floppy Disk Head Amplifier G or G = Pb−Free Package
• Video Amplifier
• Pulse Amplifier in Communications
• Magnetic Memory ORDERING INFORMATION
• Video Recorder Systems See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.

+V
R1 R2 R8 R10 R9

Q6

Q5

Q4 Q3
R11 OUTPUT 1

INPUT 1 INPUT 2
Q1 Q2
R12
G1A G1B OUTPUT 2
R3 R5

G2A G2B

Q7B Q8 Q9 Q10
Q7A Q11

R7A R7B R15 R16 R13 R14

‐V

Figure 1. Block Diagram

© Semiconductor Components Industries, LLC, 2016 1 Publication Order Number:

March, 2016 − Rev. 5 NE592/D
 NE592

PIN CONNECTIONS

SOIC-14 SOIC-8

INPUT 2 1 14 INPUT 1 INPUT 2 1 8 INPUT 1

G1B GAIN SELECT 2 7 G1A GAIN SELECT
NC 2 13 NC
V‐ 3 6 V+
G2B GAIN SELECT 3 12 G2A GAIN SELECT
OUTPUT 2 4 5 OUTPUT 1
G1B GAIN SELECT 4 11 G1A GAIN SELECT
(Top View)
V‐ 5 10 V+

NC 6 9 NC

OUTPUT 2 7 8 OUTPUT 1

(Top View)

MAXIMUM RATINGS (TA = +25°C, unless otherwise noted.)

Rating Symbol Value Unit
Supply Voltage VCC "8.0 V
Differential Input Voltage VIN "5.0 V
Common-Mode Input Voltage VCM "6.0 V
Output Current IOUT 10 mA
Operating Ambient Temperature Range TA 0 to +70 °C
Operating Junction Temperature TJ 150 °C
Storage Temperature Range TSTG 65 to +150 °C
Maximum Power Dissipation, TA = 25°C (Still Air) (Note 1) PD MAX W
SOIC-14 Package 0.98
SOIC-8 Package 0.79
Thermal Resistance, Junction−to−Ambient RqJA °C/W
SOIC-14 Package 145
SOIC-8 Package 182
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Derate above 25°C at the following rates:
SOIC-14 package at 6.9 mW/°C
SOIC-8 package at 5.5 mW/°C

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 NE592

DC ELECTRICAL CHARACTERISTICS (VSS = "6.0 V, VCM = 0, typicals at TA = +25°C, min and max at 0°C v TA v 70°C, unless
otherwise noted. Recommended operating supply voltages VS = "6.0 V.)
Characteristic Test Conditions Symbol Min Typ Max Unit
Differential Voltage Gain AVOL V/V
Gain 1 (Note 2) RL = 2.0 kW, VOUT = 3.0 VP-P 250 400 600
Gain 2 (Notes 3 and 4) 80 100 120
Input Resistance RIN kW
Gain 1 (Note 2) − − 4.0 −
Gain 2 (Notes 3 and 4) TA = 25°C 10 30 −
0°C v TA v 70°C 8.0 − −
Input Capacitance Gain 2 (Note 4) CIN − 2.0 − pF
Input Offset Current TA = 25°C IOS − 0.4 5.0 mA
0°C v TA v 70°C − − 6.0

Input Bias Current TA = 25°C IBIAS − 9.0 30 mA

0°C v TA v 70°C − − 40

Input Noise Voltage BW 1.0 kHz to 10 MHz VNOISE − 12 − mVRMS

Input Voltage Range − VIN "1.0 − − V
Common-Mode Rejection Ratio VCM "1.0 V, f < 100 kHz, TA = 25°C CMRR 60 86 − dB
Gain 2 (Note 4) VCM "1.0 V, f < 100 kHz, 50 − −
0°C v TA v 70°C
VCM "1.0 V, f < 5.0 MHz − 60 −
Supply Voltage Rejection Ratio DVS = "0.5 V PSRR 50 70 − dB
Gain 2 (Note 4)

Output Offset Voltage VOS V

Gain 1 RL = R − − 1.5
Gain 2 (Note 4) RL = R − − 1.5
Gain 3 (Note 5) RL = R, TA = 25°C − 0.35 0.75
Gain 3 (Note 5) RL = R, 0°C v TA v 70°C − − 1.0
Output Common-Mode Voltage RL = R, TA = 25°C VCM 2.4 2.9 3.4 V
Output Voltage Swing Differential RL = 2.0 kW, TA = 25°C VOUT 3.0 4.0 − V
RL = 2.0 kW, 0°C v TA v 70°C 2.8 − −
Output Resistance − ROUT − 20 − W
Power Supply Current RL = R, TA = 25°C ICC − 18 24 mA
RL = R, 0°C v TA v 70°C − − 27
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS (TA = +25°C VSS = "6.0 V, VCM = 0, unless otherwise noted. Recommended operating
supply voltages VS = "6.0 V.)
Characteristic Test Conditions Symbol Min Typ Max Unit
Bandwidth − BW MHz
Gain 1 (Note 2) − 40 −
Gain 2 (Notes 3 and 4) − 90 −
Rise Time tR ns
Gain 1 (Note 2) VOUT = 1.0 VP−P − 10.5 12
Gain 2 (Notes 3 and 4) − 4.5 −
Propagation Delay tPD ns
Gain 1 (Note 2) VOUT = 1.0 VP−P − 7.5 10
Gain 2 (Notes 3 and 4) − 6.0 −
2. Gain select Pins G1A and G1B connected together.
3. Gain select Pins G2A and G2B connected together.
4. Applies to 14-pin version only.
5. All gain select pins open.

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 NE592

TYPICAL PERFORMANCE CHARACTERISTICS

COMMON-MODE REJECTION RATIO − dB

100 7.0 1.6

GAIN 2 VS = +6V VS = +6V
90 1.4

OUTPUT VOLTAGE SWING − Vpp

VS = +6V 6.0
TA = 25oC TA = 25oC
80 TA = 25oC 1.2 RL = 1k
RL = 1kW
70 5.0 1.0
60 0.8
4.0
0.6 GAIN 2
50
40 3.0 0.4
GAIN 1
30 0.2
2.0
20 0
1.0
10 -0.2
0 0 -0.4
10k 100k 1M 10M 100M 1 5 10 50 100 500 1000 -15 -10 -5 0 5 10 15 20 25 30 35
FREQUENCY − Hz FREQUENCY − MHz TIME − ns

Figure 2. Common−Mode Figure 3. Output Voltage Swing Figure 4. Pulse Response

Rejection Ratio as a Function as a Function of Frequency
of Frequency

28 1.6 1.6
TA = 25oC GAIN 2 GAIN 2
1.4 1.4
TA = 25oC VS = +6V
SUPPLY CURRENT − mA

24 1.2 RL = 1kW VS = +8V 1.2 RL = 1kW

OUTPUT VOLTAGE − V
OUTPUT VOLTAGE − V

1.0 1.0
VS = +6V Tamb = 0oC
20 0.8 0.8
0.6 VS = +3V 0.6 TA = 25oC

16 0.4 0.4
TA = 70oC
0.2 0.2
12 0 0

-0.2 -0.2
8 -0.4 -0.4
3 4 5 6 7 8 -15 -10 -5 0 5 10 15 20 25 30 35 -15 -10 -5 0 5 10 15 20 25 30 35
SUPPLY VOLTAGE − +V TIME − ns TIME − ns

Figure 5. Supply Current as Figure 6. Pulse Response as Figure 7. Pulse Response as

a Function of Temperature a Function of Supply Voltage a Function of Temperature

1.4
1.10 60
SINGLE ENDED VOLTAGE GAIN − dB

GAIN 2 1.3 Tamb = 25oC

1.08 VS = +6V
50 VS = +6V
RELATIVE VOLTAGE GAIN

1.2
RELATIVE VOLTAGE GAIN

1.06 RL = 1kW
1.04 40 1.1
GAIN 2
1.02 1.0
30
1.00 0.9
GAIN 2 TA = −55oC
0.98 20 0.8
TA = 25oC GAIN 1
0.96 0.7
10
0.94 TA = 125oC 0.6
GAIN 1 0
0.92 0.5
0.90 -10 0.4
0 10 20 30 40 50 60 70 1 5 10 50 100 500 1000 3 4 5 6 7 8
TEMPERATURE − oC FREQUENCY − MHz SUPPLY VOLTAGE − +V

Figure 8. Voltage Gain as a Figure 9. Gain vs. Frequency Figure 10. Voltage Gain as a
Function of Temperature as a Function of Temperature Function of Supply Voltage

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 NE592

TYPICAL PERFORMANCE CHARACTERISTICS

60 1000
SINGLE ENDED VOLTAGE GAIN − dB

DIFFERENTIAL VOLTAGE GAIN − V/V

GAIN 2 0.2mF VS = +6V
50 TA = 25oC 12 f = 100kHz
14 11 100 TA = 25oC
RL = 1kW 8
592 FIGURE 2
40 1 7 0.2mF
4 10
3
30
VS = +8V
20 1

VS = +6V 51W 51W RADJ 1kW 1kW

10
.1
0 VS = +3V
VS = +6V TA = 25oC
-10 .01
1 5 10 50 100 500 1000 1 10 100 1K 10K 100K 1M
FREQUENCY − MHz RADJ − W

Figure 11. Gain vs. Frequency Figure 12. Voltage Gain Adjust Figure 13. Voltage Gain as a
as a Function of Supply Voltage Circuit Function of RADJ (Figure 2)

70 7.0
21
OVERDRIVE RECOVERY TIME − ns

VS = +6V
TA = 25oC

OUTPUT VOLTAGE SWING − V OR

60

OUTPUT SINK CURRENT − mA

VS = +6V TA = 25oC
20 6.0
SUPPLY CURRENT − mA

GAIN 2
50 5.0
19

40 VOLTAGE
18 4.0

17 30 3.0 CURRENT

20 2.0
16

15 10 1.0

14 0 0
-60 -20 20 60 100 140 0 20 40 60 80 100 120 140 160 180 200 3.0 4.0 5.0 6.0 7.0 8.0
TEMPERATURE − oC DIFFERENTIAL INPUT VOLTAGE − mV SUPPLY VOLTAGE − +V

Figure 14. Supply Current as a Figure 15. Differential Overdrive Figure 16. Output Voltage and
Function of Temperature Recovery Time Current Swing as a Function of
Supply Voltage

7.0 70 100
GAIN 2 GAIN 2
VS = +6V
OUTPUT VOLTAGE SWING − Vpp

6.0 90
INPUT NOISE VOLTAGE −μ Vrms

60 VS = +6V VS = +6V
TA = 25oC
INPUT RESISTANCE − KΩ

80 TA = 25oC
5.0 50 BW = 10MHz
70

4.0 40 60
50
3.0 30
40

2.0 20 30

20
1.0 10
10
0 0 0
10 50 100 500 1K 5K 10K -60 -20 0 20 60 100 140 1 10 100 1K 10K
LOAD RESISTANCE − W TEMPERATURE − oC SOURCE RESISTANCE − W

Figure 17. Output Voltage Figure 18. Input Resistance as a Figure 19. Input Noise Voltage
Swing as a Function of Load Function of Temperature as a Function of Source
Resistance Resistance

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 NE592

TYPICAL PERFORMANCE CHARACTERISTICS

0 0
GAIN 2 VS = +6V
VS = +6V -50
TA = 25oC

PHASE SHIFT − DEGREES

-5

PHASE SHIFT − DEGREES

TA = 25oC
-100

-10 -150 GAIN 2

-200 GAIN 1
-15
-250

-20
-300

-350
-25
1 10 100 1000
0 1 2 3 4 5 6 7 8 9 10
FREQUENCY − MHz
FREQUENCY − MHz

Figure 20. Phase Shift as a Figure 21. Phase Shift as a

Function of Frequency Function of Frequency

60
VS = +6V
GAIN 1 40 VS = +6V
50 Tamb = 25oC
TA = 25oC
RL = 1KW 30 GAIN 3
VOLTAGE GAIN − dB

VOLTAGE GAIN − dB
40 GAIN 2 20

30 10

0
20
-10
10 -20

-30
0
-40
-50
1 10 100 1000 .01 .1 1 10 100 1000
FREQUENCY − MHz FREQUENCY − MHz

Figure 22. Voltage Gain as a Figure 23. Voltage Gain as a

Function of Frequency Function of Frequency

TEST CIRCUITS (TA = 25°C, unless otherwise noted.)

VIN 592 RL VOUT

51W 51W

0.2mF

ein
592
0.2mF

eout eout
51W 51W 1kW 1kW

Figure 24. Test Circuits

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 NE592

+6
2re

11
14 10

V1 592 V0
NOTE: 1
7
V 0(s) 1.4 @ 10 4 5
[ 4
v 1(s) Z(S) ) 2re
Z
1.4 @ 104
[
Z(S) ) 32 -6
+6
Basic Configuration
0.2mF

+5
+6 11
14
10 2KW
10 9 4 8 8
529 V1 592 V0
1 7
14 11 Q 1 7 0.2mF
10
8 5
592 4
7
1 5 2 C
4 5 2KW
Q
-6
AMPLITUDE: 1‐10 mV p‐p 3
NOTE:
FREQUENCY: 1‐4 MHz 6
For frequency F1 << 1/2 π (32) C
‐6

dVi
V ] 1.4 x 10 4C
O dT
READ HEAD DIFFERENTIATOR/AMPLIFIER ZERO CROSSING DETECTOR

Differentiation with High

Disc/Tape Phase-Modulated Readback Systems Common-Mode Noise Rejection

Figure 25. Typical Applications

FILTER V0 (s) TRANSFER

Z NETWORK
TYPE V1 (s) FUNCTION

R L
LOW PASS
1.4
L
10 4 ƪ 1
s ) RńL
ƫ
R C
HIGH PASS
1.4
R
10 4 ƪ s
s ) 1ńRC
ƫ
R L C
BAND PASS
1.4
L
10 4
ƪ s
s 2 ) RńLs ) 1ńLC
ƫ
L

R
BAND REJECT
1.4
R
10 4
ƪ s 2 ) 1ńLC
s 2 ) 1ńLC ) sńRC
ƫ
C

NOTES:
In the networks above, the R value used is assumed to include 2re, or approximately 32W.
S = jW
W = 2πf

Figure 26. Filter Networks

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 NE592

ORDERING INFORMATION
Device Temperature Range Package Shipping†
NE592D8G SOIC−8 98 Units/Rail
NE592D8R2G (Pb−Free) 2500 / Tape & Reel
0 to +70°C
NE592D14G SOIC−14 55 Units/Rail
NE592D14R2G (Pb−Free) 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

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 NE592

PACKAGE DIMENSIONS

SOIC−8 NB
CASE 751−07
ISSUE AK

NOTES:
1. DIMENSIONING AND TOLERANCING PER
−X− ANSI Y14.5M, 1982.
A 2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
8 5 PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
B S 0.25 (0.010) M Y M PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
1 IN EXCESS OF THE D DIMENSION AT
4 MAXIMUM MATERIAL CONDITION.
−Y− K 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
MILLIMETERS INCHES
G
DIM MIN MAX MIN MAX
A 4.80 5.00 0.189 0.197
C N X 45 _ B 3.80 4.00 0.150 0.157
SEATING C 1.35 1.75 0.053 0.069
PLANE D 0.33 0.51 0.013 0.020
−Z− G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
0.10 (0.004) J 0.19 0.25 0.007 0.010
H M J K 0.40 1.27 0.016 0.050
D M 0 _ 8 _ 0 _ 8 _
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
0.25 (0.010) M Z Y S X S

SOLDERING FOOTPRINT*

1.52
0.060

7.0 4.0
0.275 0.155

0.6 1.270
0.024 0.050

SCALE 6:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 NE592

PACKAGE DIMENSIONS

SOIC−14
CASE 751A−03
ISSUE L
D A NOTES:
1. DIMENSIONING AND TOLERANCING PER
B ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
14 8 3. DIMENSION b DOES NOT INCLUDE DAMBAR
A3 PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
H E 4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
L 5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
1 7 DETAIL A
MILLIMETERS INCHES
b DIM MIN MAX MIN MAX
0.25 M B M 13X
A 1.35 1.75 0.054 0.068
0.25 M C A S B S A1 0.10 0.25 0.004 0.010
A3 0.19 0.25 0.008 0.010
DETAIL A b 0.35 0.49 0.014 0.019
h D 8.55 8.75 0.337 0.344
A X 45 _ E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.019
0.10 L 0.40 1.25 0.016 0.049
e A1 M
SEATING M 0_ 7_ 0_ 7_
C PLANE

SOLDERING FOOTPRINT*
6.50 14X
1.18
1

1.27
PITCH

14X
0.58

DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent− Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product
or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in
SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must
be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products
are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or
for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products
for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against
all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended
or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action
Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

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Email: orderlit@onsemi.com Phone: 81−3−5817−1050 Sales Representative

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Mouser Electronics

Authorized Distributor

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