Module 3

RF/Microwave Oscillator Design

Dr. Shilpa Kharche

Terna Engineering College, Nerul

1
 Oscillator Design
• At higher frequencies, diodes or transistors biased to a
negative resistance operating point can be used with
cavity, transmission line, or dielectric resonators to
produce fundamental frequency oscillations up to 100
GHz.
• In a negative resistance oscillator, the load matching
network is the network that determines the frequency |ΓIN| >1, |ΓOUT| >1
of oscillation and the terminating network is used to Γ = (Z-Z0)/ (Z+Z0)
provide the proper matching
 Oscillations Condition

For oscillations to occur, the loop gain must be unity.

This criteria is called as Barkhausen Criteria of oscillation

Gain Condition

Frequency of
Oscillation condition
 Oscillations Condition

For oscillations to occur, the loop gain must be unity.

This criteria is called as Barkhausen Criteria of oscillation
 Compressed Smith Chart
In Oscillators, we deal with Γ >1.
In Oscillators, we deal with Γ >1.
Rather than using compressed smith chart, the method of handling negative resistances i.e. Γ >1 on
smith chart is to plot 1/ Γ * on the smith chart.

Read the real part negative and imaginary part as it is to determine value of impedance from the
plotted 1/ Γ *

Z = -100 +j 50 Ω
 One port Negative resistance Oscillators
A negative resistance device is represented by am amplitude and frequency dependent impedance
One port Negative resistance Oscillators
One port Negative resistance Oscillators

Discussion on project group formation

 One port Negative resistance Oscillators
Design a one port oscillator using TUNNEL diode with Γin = 1.25Ļ40° at 8 GHz in 50 Ω system.

To determine ZIN, plot 1/ Γin* on smith chart

1/ Γin* =1/ 1.25Ļ-40° = 0.8Ļ40°

ZIN = (-0.86 + j 2.48) × 50 = -43 + j 124 Ω

RL / RG = -RIN/3 = 43/3 = 14.3 Ω

XL / XG = - XIN = -124 Ω

ZL/ ZG = 14.3 – j124 Ω

 One port Negative resistance Oscillators
Design a one port oscillator using TUNNEL diode with Γin = 1.25Ļ40° at 8 GHz in 50 Ω system.

Design tuning / load network

ZL/ ZG = 14.3 – j124 Ω
 Two port oscillator Design
OR
Two port oscillator Design

• Draw the output stability circle in ΓT

plane
• Identify stable and unstable regions
• Select ΓT value in unstable region
• Calculate ΓIN using ΓT selected
• Determine ZIN
• Design terminating and load network
 Two port oscillator Design
1. Calculate Δ and K:
Δ=
K=

2. Determine the stable and unstable regions. Calculate center and radius of stability circle. Calculate
CT and RT
CT=
RT =

3. Select the value of ΓT in unstable region

4. Calculate ΓIN using selected value of ΓT

5. Plot 1/ΓIN* and determine ZIN

6. Determine ZL/ZG using ZIN

7. Design terminating Network and load network

 Two port oscillator Design
Design a transistor oscillator at 4 GHz using a GaAs MESFET in a common gate configuration, with a 5 nH
inductor in series with the gate to increase the instability. Choose a load network to match to a 50 Ω load, and an
appropriate terminating network at the input to the transistor. The scattering parameters of the transistor in a
common source configuration are (Z0 = 50 Ω ) S11 = 0 . 72Ļ− 116 ◦ , S12 = 0 . 03Ļ57◦, S21 = 2 . 60Ļ76◦, and S22 =
0 . 73Ļ− 54◦
The new scattering parameters are S11 = 2.18Ļ− 35◦,S12 = 1.26Ļ18◦,S21 = 2.75Ļ96◦,S22 = 0.52Ļ155

1. Calculate Δ and K:

2. Determine the stable and unstable regions. Calculate center and radius of stability circle. Calculate CT and RT
 Two port oscillator Design
Design a transistor oscillator at 4 GHz using a GaAs MESFET in a common gate configuration, with a 5 nH
inductor in series with the gate to increase the instability. Choose a load network to match to a 50 Ω load, and an
appropriate terminating network at the input to the transistor. The scattering parameters of the transistor in a
common source configuration are (Z0 = 50 Ω ) S11 = 0 . 72Ļ− 116 ◦ , S12 = 0 . 03Ļ57◦, S21 = 2 . 60Ļ76◦, and S22 =
0 . 73Ļ− 54◦
The new scattering parameters are S11 = 2.18Ļ− 35◦,S12 = 1.26Ļ18◦,S21 = 2.75Ļ96◦,S22 = 0.52Ļ155

1. Calculate Δ and K:
Δ = 2.34Ļ-68.9°
K = 0.209

2. Determine the stable and unstable regions. Calculate center and radius of stability circle. Calculate CT and RT
CT/CL= 1.08Ļ33
RT/RL = 0.665
 Two port oscillator Design
2. Determine the stable and unstable regions.
Calculate center and radius of stability circle.
Calculate CT and RT
CT= 1.08Ļ33
RT = 0.665

3. Select ΓT in unstable region

ΓT = 0 . 59Ļ−104°

4. Calculate ΓIN
ΓIN = 3.96Ļ−2.4°

5. Determine ZIN
ZIN = −84− j1.9 Ω
ZG = (− Rin/3) − j Xin = 28 + j1 . 9 Ω
 Two port oscillator Design
2. Determine the stable and unstable regions.
Calculate center and radius of stability circle.
Calculate CT and RT
CT= 1.08Ļ33
RT = 0.665

3. Select ΓT in unstable region

ΓT = 0 . 59Ļ−104°

4. Calculate ΓIN
ΓIN = 3.96Ļ−2.4°

5. Determine ZIN
ZIN = −84− j1.9 Ω
ZG/ZS = (− Rin/3) − j Xin = 28 + j1 . 9 Ω
6. If we use inductor then j1.9 = jwl
L = 75.6 pH
or use a series stub and determine the length
 Two port oscillator Design
2. Determine the stable and unstable regions.
Calculate center and radius of stability circle.
Calculate CT and RT
CT= 1.08Ļ33
RT = 0.665

3. Select ΓT in unstable region

ΓT = 0 . 59Ļ−104°

4. Calculate ΓIN
ΓIN = 3.96Ļ−2.4°

5. Determine ZIN
ZIN = −84− j1.9 Ω
ZG/ZS = (− Rin/3) − j Xin = 28 + j1 . 9 Ω
6. If we use inductor then j1.9 = jwl
L = 75.6 pH
or use a series stub and determine the length
 Two port oscillator Design
Design 2.75 GHz oscillator using a BJT in common base configuration.
The transistor S parameters at 2.75 GHz are
S11 = 0.9Ļ150°, S21 = 1.7Ļ-80°, S12 = 0.07Ļ120°, S22 = 1.08Ļ-56°
Δ = 0.907Ļ100.09°
K = -0.646
Instability is increased by using 1.45 nH inductor in series with the
base to increase feedback. The s parameters of transistor and
inductor combination are
S11 = 1.72Ļ100°, S21 = 2.08Ļ-136°, S12 = 0.712Ļ94°, S22 = 1.16Ļ-102°
1. Calculate Δ and K:

2. Determine the stable and unstable regions. Calculate center and

radius of stability circle. Calculate CT and RT

CT=
RT =

3. Let ΓT=
 Two port oscillator Design
Design 2.75 GHz oscillator using a BJT in common base configuration.
The transistor S parameters at 2.75 GHz are
S11 = 0.9Ļ150°, S21 = 1.7Ļ-80°, S12 = 0.07Ļ120°, S22 = 1.08Ļ-56°
Δ = 0.907Ļ100.09°
K = -0.646
Instability is increased by using 1.45 nH inductor in series with the
base to increase feedback. The s parameters of transistor and
inductor combination are
S11 = 1.72Ļ100°, S21 = 2.08Ļ-136°, S12 = 0.712Ļ94°, S22 = 1.16Ļ-102°
1. Calculate Δ and K:
Δ = 1.28Ļ45.88°
K = -0.562
2. Determine the stable and unstable regions. Calculate center and
radius of stability circle. Calculate CT and RT

CT= 5.53Ļ23.1
RT = 4.91

3. Let ΓT=0.5Ļ162°
Two port oscillator Design CT= 5.53Ļ23.1 RT = 4.91
Two port oscillator Design
3. Let ΓT=0.5Ļ162°

4. ΓIN = 2.31Ļ117.6°
Plot 1/ ΓIN* = 1/ 2.31Ļ117.6°
Point is -0.512 + j0.48

5. ZIN = -25.6 + j24 Ω

6. ZL = 8.5 - j 24 Ω
Two port oscillator Design

3. Let ΓT=0.5Ļ162°

4. ΓIN = 2.31Ļ117.6°

5. ZIN = -25.6 + j24 Ω

6. ZL = 8.5 - j 24 Ω
 Two port oscillator Design
Design 8 GHz GaAs FET oscillator using reverse channel configuration. The
transistor S parameters at 8 GHz are
S11 = 0.98Ļ163°, S21 = 0.675Ļ-161°, S12 = 0.39Ļ-54°, S22 = 0.465Ļ120°
1. Calculate Δ and K:
Δ=
K=
2. Determine the stable and unstable regions. Calculate center and radius of stability circle. Calculate CT and RT
CT=
RT =
3. Select the value of ΓT in unstable region

4. Calculate ΓIN using selected value of ΓT

5. Plot 1/ΓIN* and determine ZIN

6. Determine ZL/ZG using ZIN

7. Design terminating Network and load network

 Two port oscillator Design
1. Calculate Δ and K:
Δ = 0.6747Ļ-61.86°
K = 0.529
The transistor is potentially unstable

2. Determine the stable and unstable regions. Calculate

center and radius of stability circle. Calculate CT and RT
CT= 1.35Ļ-156.1
RT = 1.1 0.521

3. Let ΓT=1Ļ-163° -> Point A -> -j1.5 X 50 = -j7.5

4. ΓIN = 12.82Ļ-16.6°
Plot 1/ ΓIN* = 1/ 12.82Ļ16.6 = 0.078Ļ-16.6
Point is -1.16 – j0.052

5. ZIN = -58 – j2.6 Ω

6. ZL = 19 + j 2.6 Ω
 Two port oscillator Design
3. Let ΓT=1Ļ-163° -> Point A -> -j1.5 X 50 = -j7.5

-j7.5 = -j/ꙍC C = 2.65 pF

Or use the stub of length 0.226 λ

6. ZL = 19 + j 2.6 Ω

Use 19 Ω resistance and inductance of reactance = j2.6 Ω

J2.6 = j ꙍL L = 0.0517 nH

Or design stub matching network

Determine dstub and Lstub
 Oscillator Phase Noise

➢ The noise of the oscillator devices randomly perturbs the zero crossings. To model this perturbation,
we write x(t) = Acos[ωct + Φn(t)], The term Φn(t) is called the “phase noise.”

➢ From another perspective, the frequency

experiences random variations, i.e., it
departs from ωc occasionally.
This spectrum occurs if the oscillator frequency has
equal probability of appearing anywhere between ωc -
Δω and ωc + Δω.
However, we intuitively expect that the oscillator
prefers ωc to other frequencies, thus spending lesser
time at frequencies that are farther from ωc. This
explains the declining phase noise “skirts”.
The output voltage of an oscillator or synthesizer can
be written as
where A ( t ) represents the amplitude fluctuations of
the output, and θ( t ) represents the phase variation
of the output waveform.
Of these, amplitude variations can usually be well
controlled, and generally have less impact on system
performance.
Phase variations may be discrete (due to deterministic
spurious mixer products or harmonics), or random in
nature (due to thermal or other random noise
sources).
 Representation of Phase Noise

This expression shows that small phase or frequency deviations in the output of an oscillator result in
modulation sidebands at ω o ± ω m, located on either side of the carrier signal at ω o. When these
deviations are due to random changes in temperature or device noise
 Representation of Phase Noise
According to the definition of phase noise as the ratio of noise power in a single sideband to the carrier power

The two-sided power spectral density associated with phase noise includes power in both sidebands
➢ since Φn(t) in equation above is multiplied by sin ωct, its power spectral density,
SΦn, is multiplied by 1/4 as it is translated to ±ωc;

➢ A spectrum analyzer measuring the resulting spectrum folds the negative

frequency spectrum atop the positive-frequency spectrum, raising the spectral
density by a factor of 2.
 How is the Phase Noise Quantified?
➢ Since the phase noise falls at frequencies farther from ωc, it must be specified at a
certain “frequency offset,” i.e., a certain difference with respect to ωc.
➢ We consider a 1-Hz bandwidth of the spectrum at an offset of Δf, measure the power in
this bandwidth, and normalize the result to the “carrier power”, called “dB with respect to
the carrier”.

➢ In practice, the phase noise reaches a constant floor at large frequency offsets (beyond a
few megahertz).
➢ We call the regions near and far from the carrier the “close-in” and the “far-out” phase
noise, respectively.
 Specification of Phase Noise

At high carrier frequencies, it is difficult to measure the noise power in a 1-Hz bandwidth.
Suppose a spectrum analyzer measures a noise power of -70 dBm in a 1-kHz bandwidth at 1-
MHz offset. How much is the phase noise at this offset if the average oscillator output power is
-2 dBm?

Since a 1-kHz bandwidth carries 10 log(1000 Hz) = 30 dB higher

noise than a 1-Hz bandwidth, we conclude that the noise power in 1
Hz is equal to -100 dBm. Normalized to the carrier power, this value
translates to a phase noise of -98 dBc/Hz.
 Effect of Phase Noise: Reciprocal Mixing
• There are two cases. In either case, for frequencies
close to the carrier at f0, the noise power decreases
as 1 / f^3, or − 18dB/octave.
• If the resonator has a relatively low Q, so that its 3 dB
bandwidth fh > fα, then for frequencies between fα
and fh the noise power drops as 1 / f^2, or − 12
dB/octave.
• If the resonator has a relatively high Q, so that fh <
fα, then for frequencies between fh and fα the noise
power drops as 1 / f , or − 6 dB/octave.
• At higher frequencies the noise is predominantly
thermal, constant with frequency, and proportional to
the noise figure of the amplifier.

➢ The effect of phase noise in a receiver is to degrade both the signal-to-noise ratio (or bit
error rate) and the selectivity.
➢ Of these, the impact on selectivity is usually the most severe.
➢ Phase noise degrades receiver selectivity by causing down conversion of signals located
nearby the desired signal frequency.
 Effect of Phase Noise: Reciprocal Mixing

➢ Referring to the ideal case depicted above (middle), we observe that the desired channel is
convolved with the impulse at ωLO, yielding an IF signal at ωIF = ωin - ωLO.
➢ Now, suppose the LO suffers from phase noise and the desired signal is accompanied by a
large interferer. The convolution of the desired signal and the interferer with the noisy LO
spectrum results in a broadened downconverted interferer whose noise skirt corrupts the
desired IF signal.
➢ This phenomenon is called “reciprocal mixing.”