AUTOMOTIVE GRADE PD - 96325

AUIRFB4610
AUIRFS4610
Features HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance D
V(BR)DSS 100V
11m:
l Enhanced dV/dT and dI/dT capability
l 175°C Operating Temperature
RDS(on) typ.
l Fast Switching G max. 14m:
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant S
ID 73A
l Automotive Qualified *

Description D D
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
S S
extremely low on-resistance per silicon area. Additional features of D D
this design are a 175°C junction operating temperature, fast G G
switching speed and improved repetitive avalanche rating . These TO-220AB D2Pak
features combine to make this design an extremely efficient and AUIRFB4610 AUIRFS4610
reliable device for use in Automotive applications and a wide variety
of other applications.
G D S
Gate Drain Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 73
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 52 A
IDM Pulsed Drain Current f 290
PD @TC = 25°C Maximum Power Dissipation 190 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally limited) d 370 mJ
IAR Avalanche Current c See Fig. 14, 15, 16a, 16b, A
EAR Repetitive Avalanche Energy c mJ
dV/dt Peak Diode Recovery e 7.6 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw x
10lbf in (1.1N m) x
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case j ––– 0.77
RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– °C/W
RθJA Junction-to-Ambient, TO-220 ––– 62
RθJA Junction-to-Ambient (PCB Mount) , D2Pak i ––– 40

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C Reference to 25°C, ID = 1mA c
RDS(on) Static Drain-to-Source On-Resistance ––– 11 14 mΩ VGS = 10V, ID = 44A f
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 100µA
gfs Forward Transconductance 73 ––– ––– S VDS = 50V, ID = 44A
RG Gate Input Resistance ––– 1.5 ––– Ω f = 1MHz, open drain
IDSS Drain-to-Source Leakage Current ––– ––– 20 VDS = 100V, VGS = 0V
µA
––– ––– 250 VDS = 100V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
nA
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge ––– 90 140 ID = 44A
Qgs Gate-to-Source Charge ––– 20 ––– nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– 36 ––– VGS = 10V f
td(on) Turn-On Delay Time ––– 18 ––– VDD = 65V
tr Rise Time ––– 87 ––– ID = 44A
ns
td(off) Turn-Off Delay Time ––– 53 ––– RG = 5.6Ω
tf Fall Time ––– 70 ––– VGS = 10V f
Ciss Input Capacitance ––– 3550 ––– VGS = 0V
Coss Output Capacitance ––– 260 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 150 ––– pF ƒ = 1.0MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 330 ––– VGS = 0V, VDS = 0V to 80V h, See Fig.11
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– 380 ––– VGS = 0V, VDS = 0V to 80V g
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 73
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

(Body Diode) c ––– ––– 290

p-n junction diode.
S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 44A, VGS = 0V f
trr Reverse Recovery Time ––– 35 53 TJ = 25°C VR = 85V,
ns
––– 42 63 TJ = 125°C IF = 44A
Qrr Reverse Recovery Charge ––– 44 66
nC
TJ = 25°C di/dt = 100A/µs f
––– 65 98 TJ = 125°C
IRRM Reverse Recovery Current ––– 2.1 ––– A T J = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by max. junction
temperature.
‚ Limited by TJmax, starting TJ = 25°C, L = 0.39mH
RG = 25Ω, IAS = 44A, VGS =10V. Part not recommended for use
above this value.
ƒ ISD ≤ 44A, di/dt ≤ 660A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
… Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS .
‡ When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
ˆ Rθ is measured at TJ approximately 90°C

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Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed
Automotive qualification. IR’s Industrial and
Consumer qualification level is granted by
extension of the higher Automotive level.

TO-220AB N/A
Moisture Sensitivity Level 2
D PAK MSL1
Machine Model Class M4(400V)
(per AEC-Q101-002)
Human Body Model Class H1C(2000V)
ESD
(per AEC-Q101-001)
Charged Device Class C3 (750V)
Model (per AEC-Q101-005)
RoHS Compliant Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.

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AUIRF/B/S4610
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
100 5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

100

10
4.5V
4.5V

≤ 60µs PULSE WIDTH ≤ 60µs PULSE WIDTH

Tj = 25°C Tj = 25°C
1 10
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000.0 3.0
ID = 73A

RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current(Α)

2.5
100.0

TJ = 175°C 2.0
(Normalized)

10.0

1.5
TJ = 25°C
1.0
1.0
VDS = 25V
≤ 60µs PULSE WIDTH
0.1
0.5
2.0 3.0 4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

6000 20
VGS = 0V, f = 1 MHZ ID= 44A
Ciss = Cgs + Cgd, Cds SHORTED
VGS, Gate-to-Source Voltage (V)

Crss = Cgd
VDS = 80V
5000
16 VDS= 50V
Coss = Cds + Cgd
VDS= 20V
C, Capacitance (pF)

4000
Ciss
12

3000
8
2000

4
1000
Coss
Crss
0
0
0 20 40 60 80 100 120 140
1 10 100
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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1000.0 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)

ID, Drain-to-Source Current (A)

ISD, Reverse Drain Current (A)

100.0 100 100µsec

TJ = 175°C

10.0 10
1msec

TJ = 25°C
10msec
1.0 1
Tc = 25°C
Tj = 175°C
VGS = 0V Single Pulse DC
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1 10 100 1000
VSD, Source-to-Drain Voltage (V) VDS , Drain-toSource Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

V(BR)DSS , Drain-to-Source Breakdown Voltage

80 125

120
60
ID , Drain Current (A)

115

40

110

20
105

0 100
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C) TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs. Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.0 1600
EAS, Single Pulse Avalanche Energy (mJ)

I D
TOP 4.6A
6.3A
1.5 1200 BOTTOM 44A
Energy (µJ)

1.0 800

0.5 400

0.0 0
0 20 40 60 80 100 25 50 75 100 125 150 175

VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)

Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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AUIRF/B/S4610
1

D = 0.50

0.20
Thermal Response ( ZthJC )

0.1 0.10
0.05
R1 R2
0.02 R1 R2 Ri (°C/W) τi (sec)
τJ
0.01 0.01 τJ
τC
0.4367 0.001016
τ
τ1 τ2
τ1 τ2 0.3337 0.009383
Ci= τi/Ri
Ci i/Ri
0.001
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
Avalanche Current (A)

10
0.05
0.10

1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.

0.1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
400 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
ID = 44A
EAR , Avalanche Energy (mJ)

Purely a thermal phenomenon and failure occurs at a temperature far in

300 excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max)
is exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
200 4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
100 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
0 ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
25 50 75 100 125 150 175
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Starting TJ , Junction Temperature (°C)
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5.0 16
ID = 1.0A
VGS(th) Gate threshold Voltage (V)

ID = 1.0mA
ID = 250µA
4.0 12
ID = 100µA

IRRM - (A)
3.0 8

IF = 29A
2.0 4
VR = 85V
TJ = 125°C
TJ = 25°C
1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000

TJ , Temperature ( °C ) dif / dt - (A / µs)

Fig 16. Threshold Voltage Vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt

16 300

12
200
QRR - (nC)
IRRM - (A)

100
IF = 44A IF = 29A
4
VR = 85V VR = 85V
TJ = 125°C TJ = 125°C
TJ = 25°C TJ = 25°C
0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000

dif / dt - (A / µs) dif / dt - (A / µs)

Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt

300

200
QRR - (nC)

100
IF = 44A
VR = 85V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000

dif / dt - (A / µs)

Fig. 20 - Typical Stored Charge vs. dif/dt

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AUIRF/B/S4610
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

V(BR)DSS
15V
tp

L DRIVER
VDS

RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS

Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms

LD
VDS VDS
90%
+
VDD -

D.U.T 10%
VGS VGS
Pulse Width < 1µs
Duty Factor < 0.1% td(on) tr td(off) tf

Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Id
Vds

Vgs

L
VCC
DUT Vgs(th)
0
1K

Qgs1 Qgs2 Qgd Qgodr

Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
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TO-220AB Package Outline

Dimensions are shown in millimeters (inches)

TO-220AB Part Marking Information

Part Number AUIRFB4610

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Lead Free

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRF/B/S4610

D2Pak Package Outline (Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

Part Number AUIRFS4610

Date Code
Y= Year
IR Logo
YWWA WW= Work Week
A= Automotive, Lead Free

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 AUIRF/B/S4610

D2Pak (TO-263AB) Tape & Reel Information

TRR

1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161) 1.50 (.059)
3.90 (.153) 0.368 (.0145)
0.342 (.0135)

FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)

FEED DIRECTION

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.173) MIN.
MAX.

30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

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AUIRF/B/S4610

Ordering Information
Base part Package Type Standard Pack Complete Part Number
Form Quantity
AUIRFB4610 TO-220 Tube 50 AUIRFB4610
AUIRFS4610 D2Pak Tube 50 AUIRFS4610
Tape and Reel Left 800 AUIRFS4610STRL
Tape and Reel Right 800 AUIRFS4610STRR

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 AUIRF/B/S4610
IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the
right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide
adequate design and operating safeguards.

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voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice.
IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create
a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
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or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245

Tel: (310) 252-7105

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