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EXPERIMENT NO:
Date:
AIM: Study of the characteristic of Unijunction Transistor (UJT) and to calculate inter
intrinsic standoff ratio

CIRCUIT DIAGRAM:

THEORY:
The uni-junction transistor (UJT) is a three terminal device Emitter (E), basel (BI) and base2
(B2). Between base l & base2 it behaves like an ordinary resistance. Rb1 & Rb2 are internal
resistance respectively from base 1 & base2.
UJT characteristics are very different from the conventional 2 junction, bipolar transistor. It is a
pulse generator with the trigger or control signal applied at the emitter. This trigger voltage is a
fraction (n) of inter base voltage, Vbb. The UJT circuit symbol and basic construction is shown
in figure 1. Its characteristic curve is shown in figure.
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It operates in three different regions:

1. Cut-off region

Let voltage Ve be applied between E and B 1 where E is positive with respect to B1. Now
increase this voltage from zero upto (Ve < VBB) E to B1 unijunction is reversed bias & emitter
current is negative as shown by the curve in figure. So upto this when Ve =V BB + VD at point R
in figure 1 it operates in cut off region, corresponding voltage & current at this point are Vp
(peak voltage) & Ip (peak current).

2. -VE resistance region

At point R in figure 1 when Ve= VBB + VD emitter starts to inject holes into lower base region
B1. This is because of increased number of carrier in base region. So, resistance Rb1 of E-B1
junction decreases.

Fig1

Due to this potential decrease & current Ie due to voltage Ve increases, so this region is negative
resistance region shown by point RS in figure 1. It is a stable region. Decrease in resistance is
due to the holes injected into the n-type slab to p-type when conduction is established.
3. Saturation region
At point S in figure 1 entire base region is saturated & resistance Rb1 does not decrease any
more. This region is called as saturation region. Further increase in Ie is accompanied by voltage
Ve where point is called valley point. Voltage and current at this point is called valley voltage
(Vv) & valley current (Iv).

PROCEDURE:
 Make connections as per circuit diagram.
 Switch on the circuit.
 Observe peak voltage.
 Increase the supply voltage step by step so that current increases.
 Note down respective voltages.
 Note down valley point voltage.
 Take two or three readings in saturation region.
 Take two or three readings in the negative resistance region .
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OBSERVATION TABLE:
Sr.No. VE (volt) IE (mA)
1
2
3
4
5
6
7

GRAPH:
Plot a graph of VBE vs IE

CONCLUSION: