TTT:
Econoline" Plastic-Molded
Silicon SEPT“ Transistors
DUAL TRANSISTOR DIFFERENTIAL AMPLIFIERS
Each device consists of two isolated high-gain, low-noise, NPN or PNP transistors in
a G-lead plastic package
li
“Vee Vata] Wideband
te | ter/tw [Won-Veer Jae | ME | te
case Vipceo ais. | Min /itas.Jrvotax) | (Waxy | Max. | i,
Typeo.|eceaD [po.anrry| Volts’ ott | vor | rona[ wa | 10a” | wna | 8) _| iy
eT 2 2]
Toa | aP— WPNyNPRC| — eo [30] 5] a0] to] 10 z oa
Toae_[ aR NON Ne] ey [staf og z 20 ae
Toa [ aN Rene — es —[ 30s] taf to 0 = or
TDa0 [at WANN] — eo os ogo To io pe
Toa “P| RP PR | — 0 Tt = oar
Toa ae PaPPNE | e305 0} 0 x eo
Tosa | PIPeN [wo $ fiat foto [5 2 0a
cs x oa
Sn a i ne
COMPLEMENTARY gach device consists of two isolated ~ one NPN and one PNP — high gin low noise
PAIRS silicon planar transistors in a 6-lead plastic package.
™ |e
cast Vancro | Veneto | Vargo | amin. | tn, | wax Ke
Typena.] euean | povarmry | votte” | vote | vows | na | ani | oF FeaTuRes
roan [ee | vewene [| 5 | 10 lesa.
Toaal_[ BP -wevenr [of sia [9 ere fn f= Tak
roe] an ween] a] ar ata 10 8
To-To| Bn] RPR/PRF] — wo 38 3H i 6p = Ta
DUAL TRANSISTORS Each dual Transistor Pair consists of two isolated, high-gain, silicon planar transistors.
T
Mg = Oma, ly = mA
Ig = SOMA, Vex = 20,4 = 0M
‘Type T0221 seectiallyenvlet to two 2N2Z19 transistors; Type 1-290 to wo 2NZ5 transistors
PACKAGE
PINNING DIAGRAMS
(PNP/NPN Polarity shown)
se = 150m Ty ~ 15m
PACKAGE BP
[CURRENT ANPLICATION FACTOR
Max.
ea | Min. | Min tin | ax. | ox. Min,
cast Vanes |Vienceo | a @ | tree | hee | tee [Vcesan|Veusan ax. | ty
Type No. |@-LEAD| POLARITY | Volts. | Volts | 30V) | tcm0.lmA| te=100A | te~180ma | Volts | Voits_|Coy_| MHz
to102 | ap] -newwen] oo | | 0 | | ao | — Tom [ow | s am
o2t[- en |-nenjnen | oo [ a P10 a [afore foe
Toma [- Br | pReyPNP [a | 0 fof tm
“Tost —[BN[-PRP/PRP_| a0 —[ 30 [of eof
“ost [ap | nenjenr | — [= | aor oe
ot [an —[ neuen | —a0 [9010 — a
ozs ep _| NeNNR | co [ | | [ae
O28 | eF —[ puPrenp | oo [af mr | it
He = SOQ, Vee = Vf = TOME "Ven = SOV
PACKAGE BN
3