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MOSFET

CJ3401-HF
P-Channel
RoHS Device
Halogen Free

Features
SOT-23 1. GATE
- High dense cell design for extremely low RDS(ON) 2. SOURCE
0.118(3.00) 3. DRAIN
0.110(2.80)
- Exceptional on-resistance and maximum 3
DC current capability. 0.055(1.40)
0.047(1.20)

1 2
0.037(0.95)
Mechanical data 0.079(2.00)
0.071(1.80)
TYP.

- Case: SOT-23, molded plastic.


0.041(1.05) 0.045(1.15)
0.035(0.90) 0.035(0.90)
- Terminals: Solderable per MIL-STD-750,
0.020(0.50) 0.004(0.10)
method 2026. 0.012(0.30) 0.000(0.00)

0.100(2.55)

Circuit diagram 0.089(2.25)


0.006(0.15)
0.003(0.08)

D
0.020(0.50) 0.022(0.55)
0.012(0.30) REF.

Dimensions in inches and (millimeter)

G
S

Maximum Ratings (at Ta=25°C unless otherwise noted)


Parameter Symbol Value Units

Maximum drain-source voltage VDS -30 V

Maximum gate-source voltage VGS ±12 V

Maximum continuous drain current ID -4.2 A

Maximum power dissipation PD 350 mW

Thermal resistance from junction to ambient (t<5s) RθJA 357 °C/W

Junction temperature TJ 150 °C

Storage temperature TSTG -55 to +150 °C

Company reserves the right to improve product design , functions and reliability without notice. REV: B

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Comchip Technology CO., LTD.
MOSFET

Electrical Characteristics (at TA=25°C unless otherwise noted)


Parameter Symbol Conditions Min Typ Max Unit

Off characteristics

Drain-source breakdown voltage V(BR)DSS VGS=0V , ID=-250µA -30 V

Zero gate voltage drain current IDSS VDS=-24V , VGS=0V -1 µA

Gate-source leakage current IGSS VGS=±12V , VDS=0V ±100 nA

On characteristics

VGS =-10V , ID=-4.2A 48 65 mΩ

Drain-source on-resistance (note 1) RDS(on) VGS=-4.5V , ID=-4A 62 75 mΩ

VGS=-2.5V , ID=-1A 88 90 mΩ

Forward transconductance (note 1) gFS VDS=-5V , ID=-5A 7 S

Gate threshold voltage VGS(th) VDS=VGS , ID=-250µA -0.7 -1.3 V

Dynamic characteristics (note 2)

Input capacitance ciss 954 pF

Output capacitance Coss VDS=-15V , VGS=0V, f=1MHZ 115 pF

Reverse transfer capacitance Crss 77 pF

Switching Characteristics (note 2)

Turn-on delay time td(on) 6.3 nS

Turn-on rise time tr VGS=-10V , VDS=-15V 3.2 nS

Turn-off delay time td(off) RL=3.6Ω , RGEN=6Ω


38.2 nS

Turn-off fall time tr 12 nS

Drain-source diode characteristics and maximum ratings

Diode forward voltage (note 1) VSD IS=-1A , VGS=0V -1 V

Note:
1. Pulse Test: Pulse width≤300μs, duty cycle≤2%.
2. These parameters have no way to verify.

Company reserves the right to improve product design , functions and reliability without notice. REV: B

QW-JTR04 Page 2
Comchip Technology CO., LTD.
MOSFET
RATING AND CHARACTERISTIC CURVES (CJ3401-HF)

Fig.1 - Output Characteristics Fig.2 - Transfer Characteristics


-25 -5
Ta=25°C VGS=-10V Ta=25°C
Pulsed VGS=-4.5V Pulsed

-20 -4

VGS=-3.0V

Drain Current, ID (A)


Dran Current, (A)

-15 -3

VGS=-2.5V

-10 -2

VGS=-2.0V
-5 -1

-0 -0
-0 -1 -2 -3 -4 -5 -0 -0.5 -1.0 -1.5 -2.0 -2.5
Drain to Source Voltage, VDS (A) Gate to Source Voltage, VGS (V)

Fig.3 - RDS(ON) — ID Fig.4 - RDS(ON) — VGS


180 180
Ta=25°C Ta=25°C
Pulsed Pulsed
150 150
ON-Resistance, RDS(ON) (mΩ)
ON-Resistance, RDS(ON) (mΩ)

120 VGS=-2.5V 120

90 90
VGS=-4.5V ID=-2A

60 60

VGS=-10V
30 30

0 0
-0 -2 -4 -6 -8 -0 -2 -4 -6 -8 -10

Drain Current, ID (A) Gate to Source Voltage, VGS (V)

Fig.5 - IS — VSD
-10

-1
Source Current, Is (A)

-0.1

-0.01

-1E-3

-1E-4

-1E-5
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

Source to Drain Voltage, VSD (V)

Company reserves the right to improve product design , functions and reliability without notice. REV: B

QW-JTR04 Page 3
Comchip Technology CO., LTD.
MOSFET
Reel Taping Specification

P0 P1

d
E
F
W
B

P A

SYMBOL A B C d D D1 D2
SOT-23 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 1.50 + 0.10 178 ± 2.0 54.40 ± 1.0 13.00 ± 1.0

(inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 0.059 + 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039

SYMBOL E F P P0 P1 W W1
SOT-23 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 9.50 ± 1.00

(inch) 0.069 ± 0.004 0.138 ± 0.004 0.158 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.374 ± 0.039

Company reserves the right to improve product design , functions and reliability without notice. REV: B

QW-JTR04 Page 4
Comchip Technology CO., LTD.
MOSFET

Marking Code
3
Part Number Marking Code

CJ3401-HF R1 XX
1 2

XX = Product type marking code

Suggested PAD Layout


B

SOT-23
SIZE
(mm) (inch) A

A 0.80 0.031
D
B 0.60 0.024

C 1.90 0.075

D 2.02 0.080 C

Standard Packaging
REEL PACK
Case Type REEL Reel Size
( pcs ) (inch)

SOT-23 3,000 7

Company reserves the right to improve product design , functions and reliability without notice. REV: B

QW-JTR04 Page 5
Comchip Technology CO., LTD.

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