2SK1056, 2SK1057, 2SK1058

Silicon N-Channel MOS FET

ADE-208-1244 (Z)
1st. Edition
Mar. 2001

Application

Low frequency power amplifier

Complementary pair with 2SJ160, 2SJ161 and 2SJ162

Features

• Good frequency characteristic

• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SK1056, 2SK1057, 2SK1058
Outline

TO-3P

G 1
2
3
1. Gate
2. Source
(Flange)
S
3. Drain

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Drain to source voltage 2SK1056 VDSX 120 V
2SK1057 140
2SK1058 160
Gate to source voltage VGSS ±15 V
Drain current ID 7 A
Body to drain diode reverse drain current I DR 7 A
1
Channel dissipation Pch* 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C

2
 2SK1056, 2SK1057, 2SK1058
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source 2SK1056 V(BR)DSX 120 — — V I D = 10 mA, VGS = –10 V
breakdown voltage 2SK1057 140
2SK1058 160
Gate to source breakdown V(BR)GSS ±15 — — V I G = ±100 µA, VDS = 0
voltage
Gate to source cutoff voltage VGS(off) 0.15 — 1.45 V I D = 100 mA, VDS = 10 V
Drain to source saturation VDS(sat) — — 12 V I D = 7 A, VGD = 0 *1
voltage
Forward transfer admittance |yfs| 0.7 1.0 1.4 S I D = 3 A, VDS = 10 V *1
Input capacitance Ciss — 600 — pF VGS = –5 V, VDS = 10 V,
Output capacitance Coss — 350 — pF f = 1 MHz
Reverse transfer capacitance Crss — 10 — pF
Turn-on time t on — 180 — ns VDD = 20 V, ID = 4 A,
Turn-off time t off — 60 — ns
Note: 1. Pulse test

3
2SK1056, 2SK1057, 2SK1058

Power vs. Temperature Derating Maximum Safe Operation Area

150 20
Ta = 25°C
Channel Dissipation Pch (W)

10
ID max (Continuous)
P PW

Drain Current ID (A)

PW W = = 1

D
5

C
100 10 0 m

O
=

pe
1 0 s

ra
s m 1
s sh

tio
2 1 1 ot

n
sh sh

(T C
ot ot

=
1.0

25
50

°C
)
0.5
2SK1056 2SK1057
2SK1058
0.2
0 50 100 150 5 10 20 50 100 200 500
Case Temperature TC (°C) Drain to Source Voltage VDS (V)

Typical Output Characteristics Typical Transfer Characteristics

10 1.0

VGS = 10 V TC = 25°C VDS = 10 V

5°C
8 9 0.8

–2
25
Drain Current ID (A)

Drain Current ID (A)

75
C=
T
6 7 0.6
6
4 5 0.4
4 Pch =
100 W
2 3 0.2
2
1
0
0 10 20 30 40 50 0 0.4 0.8 1.2 1.6 2.0
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)

4
 2SK1056, 2SK1057, 2SK1058

Drain to Source Saturation Drain to Source Voltage vs.

Voltage vs. Drain Current Gate to Source Voltage
10 10
°C
75
Drain to Source Saturation Voltage

VGD = 0

Drain to Source Voltage VDS (V)

°C °C
5 25 25 TC = 25°C
=– 8
TC
2
VDS (on) (V)

6
5A
1.0
4
0.5

2 2A
0.2
ID = 1 A
0.1
0.1 0.2 0.5 1.0 2 5 10 0 2 4 6 8 10
Drain Current ID (A) Gate to Source Voltage VGS (V)

Input Capacitance vs. Gate Forward Transfer Admittance

Source Voltage vs. Frequency
1000
Forward Transfer Admittance  yfs  (S)

3.0
Input Capacitance Ciss (pF)

1.0

500
0.3

0.1

200 0.03 TC = 25°C

VDS = 10 V
VDS = 10 V 0.01 ID = 2 A
f = 1 MHz
100 0.003
0 –2 –4 –6 –8 –10 10 k 30 k 100 k 300 k 1 M 3 M 10 M
Gate to Source Voltage VGS (V) Frequency f (Hz)

5
2SK1056, 2SK1057, 2SK1058
Switching Time vs. Drain Current
500

Switching Time ton,toff (ns)

200 t on

100

50
t off
20

10

5
0.1 0.2 0.5 1.0 2 5 10
Drain Current ID (A)

Switching Time Test Circuit

Output

RL= 2 Ω

Input

PW = 50µs 20 V
duty ratio 50 Ω
=1%

Waveforms
90 %

Input

10 %

t on t off

10 %
Output

90 %

6
 2SK1056, 2SK1057, 2SK1058

Package Dimensions

As of January, 2001

5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2 Unit: mm
φ3.2 ± 0.2 1.5

1.0
0.5

19.9 ± 0.2
14.9 ± 0.2

0.3
2.0

1.6

1.4 Max 2.0

2.8
18.0 ± 0.5

1.0 ± 0.2 0.6 ± 0.2

3.6 0.9
1.0

5.45 ± 0.5 5.45 ± 0.5

Hitachi Code TO-3P
JEDEC —
EIAJ Conforms
Mass (reference value) 5.0 g

7
2SK1056, 2SK1057, 2SK1058

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