ECE-Kuwait University Dr. A.

Al-Omar
EE 233/1 Midterm 2 Spring 2019

Name: Ideal ID:

There are 15 points in the exam.
Problem 1 (9 points): Draw the small signal circuit
Calculate rπ , Ri, and the voltage gain Av=vo/vs. (β = 50)
rπ = 2.637 kΩ

Av= 9.307

Rin= 49.16 Ω

I CC 0.5
I CC = I B + β I B = I E ⇒ I B = = = 0.009804 mA = 9.804 µ A (1 − pts )
1 + β 1 + 50
V 25.85
rπ = therm
= = 2.637 k Ω (1/ 2 − pts )
IB 0.009804

The Thevenin equivalent for the source voltage and RE is given by

(R RE ) = ( 0.05 + 1−1 ) = 0.04762 k Ω
−1 −1
RTh = S

RE 1 (1.5-pts)
=vTh = vs = vs 0.9524vs
RS + RE 1 + 0.05
For the voltage gain we calculate both vo and vs in terms of ib
vo = − β ib ( RB RL )
R
vTh = E vs = − (1 + β ) ib Rth − ib rπ
RS + RE
(3 pts)
β ( RB RL ) 50 (100−1 + 1−1 )
−1
vo RE
A= = = 0.9524
vs RS + RE (1 + β ) Rth + rπ ( 51) 0.04762 + 2.637
v

= 9.307
For the input resistance Ri = RE || R and solving for R using test voltage of 1 V
−1
vtest =1 ⇒ ib =
rπ + 1
1+ β
itot =− (1 + β ) ib =
rπ (1 pt)
vtest rπ 2.637
R =
= = = 51.71 Ω (1 − pts )
itot 1 + β 1 + 50

(1−1 + 0.07131−1 ) =
−1
RE || R =
Ri = 49.16 Ω (1 − pts )
 2

Problem 2 (6 points):
The following npn BJT has (β = 5). Find VCE, and IB..
VCE= 1.6348 V

IB= 0.04674 mA

The transistor is FA
Solving for IB using KVL
0= −5 + (1 + β ) I B RC + RB I B + 0.7 + (1 + β ) I B RE
4.3
IB =
(1 + β ) RC + RB + (1 + β ) RE
4.3
= = 0.04674mA (3 − pts )
(1 + 5)10 + 20 + (1 + 5) 2
Solving for VCE using KVL
0= −5 + (1 + β ) I B RC + VCE + (1 + β ) I B RE
VCE =5 − I B (1 + β ) RC + (1 + β ) RE 
5 − 0.04674 (1 + 5 )10 + (1 + 5 ) 2  =
= 1.6348V (3 − pts )
or
VCE =0.7 + I B RB =1.6348V
 3

Problem 3 (2 points bonus):

The following npn BJT has (β = 75) Find VCE, and IB..
VCE= 0.2 V IB= 0.085 mA 20 kΩ

The transistor is saturated

Using the node voltages method with supernode VE

=
VCE V=
CEsat 0.2V
VE − −2 VE + 0.7 − 0 VE + 0.2 − 8
0= + +
RE RB RC
 1 1 1  −2 −0.7 8
 + +  VE = + +
 E
R R B RC  RE RB RC
−2 −0.7 8
+ +
VE = 1 10 20 = −1.452
1 1 1
+ +
1 10 20
VC =+
VE 0.2 = −1.452 + 0.2 =−1.252V
−1.452 − −2.0
=IE = 0.548mA
1
8 − VC 8 − −1.252
=IC = = 0.463mA
20 20
I=
B I E − I C = 0.548 − 0.463 = 0.085mA
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Cheat Sheet
Physical Constants: For Si
q= 1.602 ×10−19 C , ε 0 =
8.854 ×10−14 F / cm , ni =
1.45 ×1010 cm −3 , Eg =
1.124eV
kT
2.8 ×1019 cm −3 , NV =
NC = 1.04 ×1019 cm −3 , VT == 25.85mV
q T =300 K
for majority carriers µn 1500
= = cm 2 /(V -s ) , and µ p 475 cm 2 /(V-s)
Carrier Concentration:
pn = ni2
for homogeneous semiconductor p − n + N d+ − N A− =0
2
N + − N A−  N + − N A−  ni2
for n-type material n = D +  D  + ni ,
2
p=
2  2  n
l
conductivity= σ qµn n + qµ p p Resistance R =
σA
BJT transistor
Parameters for small signal model
βVT VT VA β
=rπ = =, r0 , ωT =
IC IB IC rπ ( Cπ + Cµ )
MOS transistor
The I-V characteristics for NMOS transistor is given by:

0 VGS ≤ VT cut − off

  VDS 
I D (VGS , V=
DS ) k  VGS − VT −  VDS VGS > VT and VDS ≤ VGS − VT triode
  2 
1
 k (VGS − VT ) VGS > VT and VDS > VGS − VT
2
saturation
2
W W
where =k k= ′ µnCox ,
L L
V gm
Small signal parameters g m = 2kI D , r0 = A , ωT =
ID CS + C D
Diode

 ηVV 
I-V characterisitcs =I D (V ) I S  e T − 1
 
 
ηVT
rd =
ID
Rectifier ripple voltage
VT
Half wave vr = p
RC
V pT
Full wave vr =
2 RC
 5

VCE > 0.2 V

VEC > 0.2 V

NPN PNP

Large signal model for BJT