ECE-Kuwait University Dr. A.

Al-Omar
EE 233/51 Midterm 2 Spring 2017/18

Name: ID:

There are 15 points in the exam.

Problem 1 (9 points): Draw the small signal circuit
Calculate rπ , Ri, and the voltage gain Av=vo/vs. (β = 50)
rπ = 2.637 kΩ

Av= 7.773
1 kΩ

Rin= 66.57 Ω

I CC 0.5
I CC = I B + β I B = I E ⇒ I B = = = 0.009804 mA = 9.804 µ A (1 − pts )
1 + β 1 + 50
V 25.85
=
rπ = therm = 2.637 k Ω (1/ 2 − pts )
IB 0.009804

The Thevenin equivalent for the source voltage and RE is given by

(R RE ) = ( 0.05 + 1−1 ) = 0.04762 k Ω
−1 −1
RTh = S

RE 1 (1.5-pts)
=vTh = vs = vs 0.9524vs
RS + RE 1 + 0.05
For the voltage gain we calculate both vo and vs in terms of ib
vo = − β ib ( RB RL )
R
vTh = E vs = − (1 + β ) ib Rth − ib ( rπ + 1)
RS + RE
(3 pts)
β ( RB RL ) 50 (100−1 + 1−1 )
−1
vo RE
A= = = 0.9524
vs RS + RE (1 + β ) Rth + rπ + 1 ( 51) 0.04762 + 3.637
v

= 7.773
For the input resistance Ri = RE || R and solving for R using test voltage of 1 V
−1
vtest =1 ⇒ ib =
rπ + 1
1+ β
itot =− (1 + β ) ib =
rπ + 1 (1 pt)
vtest rπ + 1 2.637 + 1
R =
= = = 71.31 Ω (1 − pts )
itot 1 + β 1 + 50

(1 + 0.07131−1 ) = 66.57 Ω
−1
=Ri R=  −1
(1 − pts )
E || R

Dr. Al-Omar 22-Apr-2017 ECE-Kuwait University

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(1 pts)
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Problem 2 (6 points):
The following npn BJT has (β = 9, Vcc=3 V, Rc= 5 kΩ,
RB1 = 15 kΩ, and RB2= 10 kΩ). Find VCE, and Ic..
VCE= 1.958 V

IC= 0.1246 mA

Forward active BJT

0.7
I=
B2 = 0.07 A (1/ 2 − pts )
10
I B1 =I B + I B 2 =I B + 0.07 (1/ 2 − pts )
I Rc =I B1 + β I B =(1 + β ) I B + I B 2 =10 I B + 0.07 (1 − pts )
KVL
0=
−Vcc + Rc I Rc + RB1 I B1 + 0.7
0 =−3 + 0.7 + Rc (10 I B + 0.07 ) + RB1 ( I B + 0.07 )
2.3 − 0.07 ( Rc + RB1 ) 2.3 − 0.07 ( 5 + 15 )
=IB =
10 Rc + RB1 10 × 5 + 15
= 0.01385 mA (1.5 − pts )
Ic = β IB =9 × 0.01385 =0.1246 mA (1/ 2 − pts )
Vcc − Rc I Rc = 3 − (10 I B + 0.07 ) Rc
VCE =
= 3 − (0.1385 + 0.07) × 5
= 1.958V (1 − pts )

(1 pts)
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Cheat Sheet
Physical Constants: For Si
q= 1.602 ×10−19 C , ε 0 =
8.854 ×10−14 F / cm , ni =
1.45 ×1010 cm −3 , Eg =
1.124eV
kT
2.8 ×1019 cm −3 , NV =
NC = 1.04 ×1019 cm −3 , VT == 25.85mV
q T =300 K
for majority carriers µn 1500
= = cm 2 /(V -s ) , and µ p 475 cm 2 /(V-s)
Carrier Concentration:
pn = ni2
for homogeneous semiconductor p − n + N d+ − N A− =0
2
N + − N A−  N + − N A−  ni2
for n-type material n = D +  D  + ni ,
2
p=
2  2  n
l
conductivity= σ q µn n + q µ p p Resistance R =
σA
BJT transistor
Parameters for small signal model
βVT VT VA β
=rπ = =, r0 , ωT =
IC IB IC rπ ( Cπ + Cµ )
MOS transistor
The I-V characteristics for NMOS transistor is given by:

0 VGS ≤ VT cut − off

  VDS 
I D (VGS , V=
DS ) k  VGS − VT −  VDS VGS > VT and VDS ≤ VGS − VT triode
  2 
1
 k (VGS − VT ) VGS > VT and VDS > VGS − VT
2
saturation
2
W W
where =k k= ′ µnCox ,
L L
V gm
Small signal parameters g m = 2kI D , r0 = A , ωT =
ID CS + C D
Diode

 ηVV 
I-V characterisitcs =I (V ) I S e
T
− 1
D
 
 
ηV
rd = T
ID
Rectifier ripple voltage
VT
Half wave vr = p
RC
V pT
Full wave vr =
2 RC
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VCE > 0.2 V VEC > 0.2 V

NPN PNP

Large signal model for BJT