Fp50R12Kt4: 技术信息/Technicalinformation

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules FP50R12KT4
EconoPIM™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode
EconoPIM™2modulewithtrench/fieldstopIGBT4andEmitterControlled4diode
初步数据
IGBT,逆变器/IGBT,Inverter PreliminaryData
最大额定值/MaximumRatedValues
集电极－发射极电压
Tvj = 25°C VCES 1200 V
Collector-emittervoltage
连续集电极直流电流
TC = 95°C, Tvj max = 175°C IC nom 50 A
ContinuousDCcollectorcurrent
集电极重复峰值电流
tP = 1 ms ICRM 100 A
Repetitivepeakcollectorcurrent
总功率损耗
TC = 25°C, Tvj max = 175°C Ptot 280 W
Totalpowerdissipation
栅极－发射极峰值电压
VGES +/-20 V
Gate-emitterpeakvoltage
特征值/CharacteristicValues min. typ. max.

集电极－发射极饱和电压 IC = 50 A, VGE = 15 V Tvj = 25°C 1,85 2,25 V
Collector-emittersaturationvoltage IC = 50 A, VGE = 15 V Tvj = 125°C VCE sat 2,15 V
IC = 50 A, VGE = 15 V Tvj = 150°C 2,25 V
栅极阈值电压
IC = 1,70 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
Gatethresholdvoltage
栅极电荷
VGE = -15 V ... +15 V QG 0,38 µC
Gatecharge
内部栅极电阻
Tvj = 25°C RGint 4,0 Ω
Internalgateresistor
输入电容
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 2,80 nF
Inputcapacitance
反向传输电容
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,10 nF
Reversetransfercapacitance
集电极-发射极截止电流
VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
Collector-emittercut-offcurrent
栅极-发射极漏电流
VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA
Gate-emitterleakagecurrent
开通延迟时间(电感负载) IC = 50 A, VCE = 600 V Tvj = 25°C 0,16 µs
td on
Turn-ondelaytime,inductiveload VGE = ±15 V Tvj = 125°C 0,17 µs
RGon = 15 Ω Tvj = 150°C 0,17 µs
上升时间(电感负载) IC = 50 A, VCE = 600 V Tvj = 25°C 0,03 µs
tr
Risetime,inductiveload VGE = ±15 V Tvj = 125°C 0,04 µs
RGon = 15 Ω Tvj = 150°C 0,04 µs
关断延迟时间(电感负载) IC = 50 A, VCE = 600 V Tvj = 25°C 0,33 µs
td off
Turn-offdelaytime,inductiveload VGE = ±15 V Tvj = 125°C 0,43 µs
RGoff = 15 Ω Tvj = 150°C 0,45 µs
下降时间(电感负载) IC = 50 A, VCE = 600 V Tvj = 25°C 0,08 µs
tf
Falltime,inductiveload VGE = ±15 V Tvj = 125°C 0,15 µs
RGoff = 15 Ω Tvj = 150°C 0,17 µs
开通损耗能量(每脉冲) IC = 50 A, VCE = 600 V, LS = 20 nH Tvj = 25°C 5,70 mJ
Turn-onenergylossperpulse VGE = ±15 V, di/dt = 1400 A/µs (Tvj = 150°C) Tvj = 125°C Eon 7,70 mJ
RGon = 15 Ω Tvj = 150°C 8,40 mJ
关断损耗能量(每脉冲） IC = 50 A, VCE = 600 V, LS = 20 nH Tvj = 25°C 2,80 mJ
Turn-offenergylossperpulse VGE = ±15 V, du/dt = 3600 V/µs (Tvj = 150°C) Tvj = 125°C Eoff 4,30 mJ
RGoff = 15 Ω Tvj = 150°C 4,80 mJ
短路数据 VGE ≤ 15 V, VCC = 900 V
ISC
SCdata VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 125°C 180 A
结－外壳热阻
每个IGBT/perIGBT RthJC 0,54 K/W
Thermalresistance,junctiontocase
外壳－散热器热阻每个IGBT/perIGBT
RthCH 0,295 K/W
Thermalresistance,casetoheatsink λPaste=1W/(m·K)/λgrease=1W/(m·K)
在开关状态下温度
Tvj op -40 150 °C
Temperatureunderswitchingconditions
preparedby:AS dateofpublication:2013-11-04
approvedby:RS revision:2.0
1
IGBT-模块
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
反向重复峰值电压
Tvj = 25°C VRRM 1200 V
Repetitivepeakreversevoltage
连续正向直流电流
IF 50 A
ContinuousDCforwardcurrent
正向重复峰值电流
tP = 1 ms IFRM 100 A
Repetitivepeakforwardcurrent
I2t-值
VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 560 A²s
I²t-value

正向电压 IF = 50 A, VGE = 0 V Tvj = 25°C 1,70 2,15 V
Forwardvoltage IF = 50 A, VGE = 0 V Tvj = 125°C VF 1,65 V
IF = 50 A, VGE = 0 V Tvj = 150°C 1,65 V
反向恢复峰值电流 IF = 50 A, - diF/dt = 1400 A/µs (Tvj=150°C) Tvj = 25°C 54,0 A
Peakreverserecoverycurrent VR = 600 V Tvj = 125°C IRM 60,0 A
VGE = -15 V Tvj = 150°C 63,0 A
恢复电荷 IF = 50 A, - diF/dt = 1400 A/µs (Tvj=150°C) Tvj = 25°C 5,50 µC
Recoveredcharge VR = 600 V Tvj = 125°C Qr 8,80 µC
VGE = -15 V Tvj = 150°C 10,0 µC
反向恢复损耗（每脉冲） IF = 50 A, - diF/dt = 1400 A/µs (Tvj=150°C) Tvj = 25°C 1,70 mJ
Reverserecoveryenergy VR = 600 V Tvj = 125°C Erec 3,00 mJ
VGE = -15 V Tvj = 150°C 3,70 mJ
结－外壳热阻
每个二极管/perdiode RthJC 0,81 K/W
外壳－散热器热阻每个二极管/perdiode
RthCH 0,44 K/W
Tvj op -40 150 °C
二极管,整流器/Diode,Rectifier
最大正向均方根电流(每芯片)
TC = 80°C IFRMSM 70 A
MaximumRMSforwardcurrentperchip
最大整流器输出均方根电流
TC = 80°C IRMSM 80 A
MaximumRMScurrentatrectifieroutput
正向浪涌电流 tp = 10 ms, Tvj = 25°C 450 A
IFSM
Surgeforwardcurrent tp = 10 ms, Tvj = 150°C 370 A
I2t-值 tp = 10 ms, Tvj = 25°C 1000 A²s
I²t
I²t-value tp = 10 ms, Tvj = 150°C 685 A²s

正向电压
Tvj = 150°C, IF = 50 A VF 1,05 V
Forwardvoltage
反向电流
Tvj = 150°C, VR = 1600 V IR 1,00 mA
Reversecurrent
结－外壳热阻
RthCH 0,465 K/W
Tvj op -40 150 °C
2
IGBT-模块
初步数据
PreliminaryData
IGBT,制动-斩波器/IGBT,Brake-Chopper
集电极－发射极电压
Tvj = 25°C VCES 1200 V
Collector-emittervoltage
连续集电极直流电流
TC = 100°C, Tvj max = 175°C IC nom 25 A
ContinuousDCcollectorcurrent
集电极重复峰值电流
tP = 1 ms ICRM 50 A
Repetitivepeakcollectorcurrent
总功率损耗
TC = 25°C, Tvj max = 175°C Ptot 160 W
Totalpowerdissipation
栅极－发射极峰值电压
VGES +/-20 V
Gate-emitterpeakvoltage

集电极－发射极饱和电压 IC = 25 A, VGE = 15 V Tvj = 25°C 1,85 2,25 V
Collector-emittersaturationvoltage IC = 25 A, VGE = 15 V Tvj = 125°C VCE sat 2,15 V
IC = 25 A, VGE = 15 V Tvj = 150°C 2,25 V
栅极阈值电压
IC = 0,85 mA, VCE = VGE, Tvj = 25°C VGEth 5,2 5,8 6,4 V
Gatethresholdvoltage
栅极电荷
VGE = -15 V ... +15 V QG 0,20 µC
Gatecharge
内部栅极电阻
Tvj = 25°C RGint 0,0 Ω
Internalgateresistor
输入电容
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 1,45 nF
Inputcapacitance
反向传输电容
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,05 nF
Reversetransfercapacitance
集电极-发射极截止电流
VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA
Collector-emittercut-offcurrent
栅极-发射极漏电流
VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 100 nA
Gate-emitterleakagecurrent
开通延迟时间(电感负载) IC = 25 A, VCE = 600 V Tvj = 25°C 0,05 µs
td on
Turn-ondelaytime,inductiveload VGE = ±15 V Tvj = 125°C 0,06 µs
RGon = 37 Ω Tvj = 150°C 0,06 µs
上升时间(电感负载) IC = 25 A, VCE = 600 V Tvj = 25°C 0,03 µs
tr
Risetime,inductiveload VGE = ±15 V Tvj = 125°C 0,04 µs
RGon = 37 Ω Tvj = 150°C 0,05 µs
关断延迟时间(电感负载) IC = 25 A, VCE = 600 V Tvj = 25°C 0,34 µs
td off
Turn-offdelaytime,inductiveload VGE = ±15 V Tvj = 125°C 0,43 µs
RGoff = 37 Ω Tvj = 150°C 0,45 µs
下降时间(电感负载) IC = 25 A, VCE = 600 V Tvj = 25°C 0,05 µs
tf
Falltime,inductiveload VGE = ±15 V Tvj = 125°C 0,07 µs
RGoff = 37 Ω Tvj = 150°C 0,08 µs
开通损耗能量(每脉冲) IC = 25 A, VCE = 600 V, LS = t.b.d. nH Tvj = 25°C 2,00 mJ
Turn-onenergylossperpulse VGE = ±15 V Tvj = 125°C Eon 2,65 mJ
RGon = 37 Ω Tvj = 150°C 2,90 mJ
关断损耗能量(每脉冲） IC = 25 A, VCE = 600 V, LS = t.b.d. nH Tvj = 25°C 1,40 mJ
Turn-offenergylossperpulse VGE = ±15 V Tvj = 125°C Eoff 2,20 mJ
RGoff = 37 Ω Tvj = 150°C 2,40 mJ
短路数据 VGE ≤ 15 V, VCC = 900 V
ISC
SCdata VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C 90 A
结－外壳热阻
每个IGBT/perIGBT RthJC 0,95 K/W
外壳－散热器热阻每个IGBT/perIGBT
RthCH 0,52 K/W
Tvj op -40 150 °C
3
IGBT-模块
初步数据
PreliminaryData
二极管，制动-斩波器/Diode,Brake-Chopper
连续正向直流电流
IF 15 A
ContinuousDCforwardcurrent
正向重复峰值电流
tP = 1 ms IFRM 30 A
Repetitivepeakforwardcurrent
I2t-值
VR = 0 V, tP = 10 ms, Tvj = 125°C I²t 48,0 A²s
I²t-value

正向电压 IF = 15 A, VGE = 0 V Tvj = 25°C 1,75 2,25 V
Forwardvoltage IF = 15 A, VGE = 0 V Tvj = 125°C VF 1,75 V
IF = 15 A, VGE = 0 V Tvj = 150°C 1,75 V
反向恢复峰值电流 IF = 15 A, - diF/dt = 1000 A/µs (Tvj=150°C) Tvj = 25°C 20,0 A
Peakreverserecoverycurrent VR = 600 V Tvj = 125°C IRM 22,0 A
Tvj = 150°C 23,0 A
恢复电荷 IF = 15 A, - diF/dt = 1000 A/µs (Tvj=150°C) Tvj = 25°C 1,50 µC
Recoveredcharge VR = 600 V Tvj = 125°C Qr 2,50 µC
Tvj = 150°C 2,70 µC
反向恢复损耗（每脉冲） IF = 15 A, - diF/dt = 1000 A/µs (Tvj=150°C) Tvj = 25°C 0,55 mJ
Reverserecoveryenergy VR = 600 V Tvj = 125°C Erec 0,90 mJ
Tvj = 150°C 1,00 mJ
结－外壳热阻
RthCH 0,82 K/W
Tvj op -40 150 °C
负温度系数热敏电阻/NTC-Thermistor
额定电阻值
TC = 25°C R25 5,00 kΩ
Ratedresistance
R100偏差
TC = 100°C, R100 = 493 Ω ∆R/R -5 5 %
DeviationofR100
耗散功率
TC = 25°C P25 20,0 mW
Powerdissipation
B-值
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K
B-value
B-值
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K
B-value
B-值
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K
B-value
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
4
IGBT-模块
初步数据
PreliminaryData
模块/Module
绝缘测试电压
RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV
Isolationtestvoltage
模块基板材料
Cu
Materialofmodulebaseplate
内部绝缘基本绝缘(class1,IEC61140)
Al2O3
Internalisolation basicinsulation(class1,IEC61140)
爬电距离端子-散热片/terminaltoheatsink 10,0
mm
Creepagedistance 端子-端子/terminaltoterminal
电气间隙端子-散热片/terminaltoheatsink 7,5
mm
Clearance 端子-端子/terminaltoterminal
相对电痕指数
CTI > 200
Comperativetrackingindex
min. typ. max.
外壳－散热器热阻每个模块/permodule
RthCH 0,02 K/W
杂散电感,模块
LsCE 35 nH
Strayinductancemodule
最大结温逆变器,制动-斩波器/inverter,brake-chopper 175 °C
Tvj max
Maximumjunctiontemperature 整流器/rectifier 150 °C
在开关状态下温度逆变器,制动-斩波器/inverter,brake-chopper -40 150 °C
Tvj op
Temperatureunderswitchingconditions 整流器/rectifier -40 150 °C
储存温度
Tstg -40 125 °C
Storagetemperature
模块安装的安装扭距螺丝M5根据相应的应用手册进行安装
M 3,00 - 6,00 Nm
Mountingtorqueformodulmounting ScrewM5-Mountingaccordingtovalidapplicationnote
重量
G 180 g
Weight
5
IGBT-模块
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型) 输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical) outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE) IC=f(VCE)
VGE=15V Tvj=150°C
100 100
Tvj = 25°C VGE = 19V
90 Tvj = 125°C 90 VGE = 17V
Tvj = 150°C VGE = 15V
VGE = 13V
80 80 VGE = 11V
VGE = 9V
70 70
60 60
IC [A]
IC [A]
50 50
40 40
30 30
20 20
10 10
0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V] VCE [V]
传输特性IGBT,逆变器(典型) 开关损耗IGBT,逆变器（典型)
transfercharacteristicIGBT,Inverter(typical) switchinglossesIGBT,Inverter(typical)
IC=f(VGE) Eon=f(IC),Eoff=f(IC)
VCE=20V VGE=±15V,RGon=15Ω,RGoff=15Ω,VCE=600V
100 20
Tvj = 25°C Eon, Tvj = 125°C
90 Tvj = 125°C 18 Eoff, Tvj = 125°C
Tvj = 150°C Eon, Tvj = 150°C
Eoff, Tvj = 150°C
80 16
70 14
60 12
E [mJ]
IC [A]
50 10
40 8
30 6
20 4
10 2
0 0
5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 70 80 90 100
VGE [V] IC [A]
6
IGBT-模块
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型) 瞬态热阻抗IGBT,逆变器
switchinglossesIGBT,Inverter(typical) transientthermalimpedanceIGBT,Inverter
Eon=f(RG),Eoff=f(RG) ZthJC=f(t)
VGE=±15V,IC=50A,VCE=600V
20 1
Eon, Tvj = 125°C ZthJC : IGBT
18 Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
16
14
12
ZthJC [K/W]
E [mJ]
10 0,1
4
i: 1 2 3 4
ri[K/W]: 0,0324 0,1782 0,1728 0,1566
2 τi[s]: 0,01 0,02 0,05 0,1
0 0,01
0 20 40 60 80 100 120 140 0,001 0,01 0,1 1 10
RG [Ω] t [s]
反偏安全工作区IGBT,逆变器（RBSOA）正向偏压特性二极管,逆变器（典型)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA) forwardcharacteristicofDiode,Inverter(typical)
IC=f(VCE) IF=f(VF)
VGE=±15V,RGoff=15Ω,Tvj=150°C
110 100
IC, Modul Tvj = 25°C
100 IC, Chip 90 Tvj = 125°C
Tvj = 150°C
90
80
80
70
70
60
60
IC [A]
IF [A]
50
50
40
40
30
30
20
20
10 10
0 0
0 200 400 600 800 1000 1200 1400 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VCE [V] VF [V]
7
IGBT-模块
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型) 开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical) switchinglossesDiode,Inverter(typical)
Erec=f(IF) Erec=f(RG)
RGon=15Ω,VCE=600V IF=50A,VCE=600V
5,0 5,0
Erec, Tvj = 125°C Erec, Tvj = 125°C
4,5 Erec, Tvj = 150°C 4,5 Erec, Tvj = 150°C
4,0 4,0
3,5 3,5
3,0 3,0
E [mJ]
E [mJ]
2,5 2,5
2,0 2,0
1,5 1,5
1,0 1,0
0,5 0,5
0,0 0,0
0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140
IF [A] RG [Ω]
瞬态热阻抗二极管,逆变器正向偏压特性二极管,整流器（典型)
transientthermalimpedanceDiode,Inverter forwardcharacteristicofDiode,Rectifier(typical)
ZthJC=f(t) IF=f(VF)
10 100
ZthJC : Diode Tvj = 25°C
90 Tvj = 150°C
80
70
1
60
ZthJC [K/W]
IF [A]
50
40
0,1
30
20
i: 1 2 3 4
ri[K/W]: 0,0486 0,2673 0,2592 0,2349
τi[s]: 0,01 0,02 0,05 0,1 10
0,01 0
0,001 0,01 0,1 1 10 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4
t [s] VF [V]
8
IGBT-模块
初步数据
PreliminaryData
输出特性IGBT,制动-斩波器（典型) 正向偏压特性二极管，制动-斩波器（典型)
outputcharacteristicIGBT,Brake-Chopper(typical) forwardcharacteristicofDiode,Brake-Chopper(typical)
IC=f(VCE) IF=f(VF)
VGE=15V
50 27
Tvj = 25°C Tvj = 25°C
45 Tvj = 125°C Tvj = 125°C
Tvj = 150°C 24 Tvj = 150°C
40
21
35
18
30
15
IC [A]
IF [A]
25
12
20
9
15
6
10
5 3
0 0
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VCE [V] VF [V]
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
10000
R[Ω]
1000
100
0 20 40 60 80 100 120 140 160
TC [°C]
9
IGBT-模块
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
In fin e o n
10
IGBT-模块
初步数据
PreliminaryData
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Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
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Fp50R12Kt4: 技术信息/Technicalinformation

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