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Si4435Dy: 30V P-Channel Powertrench Mosfet
Si4435Dy: 30V P-Channel Powertrench Mosfet
October 2001
SI4435DY
30V P-Channel PowerTrench MOSFET
DD 5 4
DD
DD 6 3
DD
7 2
SO-8 G
S G 8 1
SS S
Pin 1 SO-8 SS
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W
RθJ C Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
Off Characteristics
BV DSS Drain–Source Breakdown Voltage V GS = 0 V, ID = –250 µA –30 V
∆BV DSS Breakdown Voltage Temperature
ID = –250 µA, Referenced to 25°C –21 mV/°C
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current V DS = –24 V, V GS = 0 V –1 µA
IGSSF Gate–Body Leakage, Forward V GS = 20 V, V DS = 0 V 100 nA
IGSSR Gate–Body Leakage, Reverse V GS = –20 V, V DS = 0 V –100 nA
On Characteristics (Note 2)
V GS(th) Gate Threshold Voltage V DS = V GS , ID = –250 µA –1 –1.7 –3 V
∆V GS(th) Gate Threshold Voltage ID = –250 µA, Referenced to 25°C
5 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source V GS = –10 V, ID = –8.8 A 15 20 mΩ
On–Resistance V GS = –4.5 V, ID = –6.7 A 22 35
V GS = –10 V, ID = –8.8A, TJ =125°C 19 32
ID(on) On–State Drain Current V GS = –10 V, V DS = –5 V –40 A
gFS Forward Transconductance V DS = –5 V, ID = –8.8 A 24 S
Dynamic Characteristics
Ciss Input Capacitance V DS = –15 V, V GS = 0 V, 1604 pF
Coss Output Capacitance f = 1.0 MHz 408 pF
Crss Reverse Transfer Capacitance 202 pF
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
DRAIN-SOURCE ON-RESISTANCE
1.8 V GS=-4.5V
V -4.0V
40
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
1.6
30 -4.5V
-3.5V
1.4 -5.0V
20 -6.0V
1.2
-7.0V
-3.0V -8.0V
10 -10V
1
0 0.8
0 1 2 3 0 10 20 30 40 50
-V DS , DRAIN TO SOURCE VOLTAGE (V) -I D, DRAIN CURRENT (A)
1.6 0.07
ID = -8.8A
V GS = -10V ID = -4.4A
DRAIN-SOURCE ON-RESISTANCE
0.05
1.2
0.04
1 TA = 125 oC
0.03
0.8
0.02
T A = 25o C
0.6 0.01
-50 -25 0 25 50 75 100 125 150 175 2 4 6 8 10
T J, JUNCTION TEMPERATURE ( oC) -V GS, GATE TO SOURCE VOLTAGE (V)
40 100
V DS = -5V V GS =0V
o
T A = -55 C
-IS , REVERSE DRAIN CURRENT (A)
25o C 10
-I D, DRAIN CURRENT (A)
30 T A = 125o C
125oC 1
25o C
20 0.1
-55o C
0.01
10
0.001
0
0.0001
1.5 2 2.5 3 3.5 4
0 0.2 0.4 0.6 0.8 1 1.2
-V GS, GATE TO SOURCE VOLTAGE (V)
-V SD , BODY DIODE FORWARD VOLTAGE (V)
-10V
8 2000
-15V CISS
CAPACITANCE (pF)
6 1500
4 1000
COSS
2 500
CRSS
0 0
0 6 12 18 24 30 0 5 10 15 20 25 30
Qg, GATE CHARGE (nC) -V DS, DRAIN TO SOURCE VOLTAGE (V)
100 50
10ms
100ms 30
1s
1 10s
DC 20
V GS = -10V
0.1 SINGLE PULSE
Rθ JA = 125o C/W 10
T A = 25o C
0.01 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
-V DS , DRAIN-SOURCE VOLTAGE (V) t 1, TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
D = 0.5
RθJA(t) = r(t) + RθJA
r(t), NORMALIZED EFFECTIVE
o
0.2 RθJA = 125 C/W
0.1 0.1
0.05
P(pk)
0.02
0.01
t1
0.01 t2
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. H5