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Bee r20 Questions & Answers UNIT1
Bee r20 Questions & Answers UNIT1
GIT-ECE-BEEE Page 1
GATES INSTITUTE OF TECHNOLOGY, GOOTY
9) Define Diffusion & transition capacitance?
In a PN diode, Diffusion capacitance occurs in Forward bias conditions. It is also referred as Storage
capacitance. It is denoted by CD. It occurs due to stored charge of minority charge carriers near to depletion
region.
In a PN diode, transition capacitance occurs in reverse bias conditions. It is also referred as Junction
capacitance/ space charge capacitance. It is denoted by CT. It occurs due to majority charge carriers move
away from depletion region, then width of the region increases providing capacitance more than that of
diffusion capacitance.
10) Define static & dynamic resistance of diode?
Static resistance R of a diode can be defined as the ratio of voltage V across the diode to the
current flowing through the diode.
R = V/ I
Where
R - Static resistance of a diode
V - Voltage across the diode
I - current across the diode
Dynamic resistance of a diode can be defines as the ration of change in voltage across diode to
change in current flowing through the diode.
Formula R= V2-V1/ I2-I1
11) Draw the symbol, structure & V-I characteristics of diode?
GIT-ECE-BEEE Page 2
GATES INSTITUTE OF TECHNOLOGY, GOOTY
PN junction diode Zener diode
It is normally doped diode It is heavily doped diode
Electricity flows in one direction Electricity flows in both directions
Used for rectification Used for voltage regulation
Width of the depletion layer is large Depletion layer width is small compared to pn
compare to Zener diode diode
It is always operated in forward It is always operated in reverse bias condition
bias condition
It has no sharp reverse breakdown It has sharp reverse breakdown, but functions
properly without burn.
It conducts in only one direction Conducts in both directions
GIT-ECE-BEEE Page 3
GATES INSTITUTE OF TECHNOLOGY, GOOTY
Transistor represents transfer of resistance from one region to another. It consists of two
junctions formed by sand witching either P-type or N-type semiconductor between a pair of
opposite types. Transistor is a three terminal device.
Three terminals: emitter, base, collector
21) List types of transistors?
Unipolar junction transistor.
Bipolar junction transistor.
22) Define operating point/ Quiescent/ Q-point?
Operating point of a transistor is defined as in which obtained from the values of collector
current and collector to emitter voltage when no signal is given at input.
23) Define doping.
The process of adding impurities to an intrinsic semiconductor is called doping.
24) Draw symbols of BJT?
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GATES INSTITUTE OF TECHNOLOGY, GOOTY
It is the reverse voltage of a PN diode at which the junction breakdown and there will be a sudden
increase in reverse current.
32) Define diffusion?
It is defined as the gradual flow of charge from a region of high density to a region of low density.
33) Define Zener breakdown.
In a heavily doped PN region, direct rupture of covalent bonds takes place because of the strong
electric field applied. This new electron hole pair increases the reverse current.
34) Define avalanche breakdown.
In a Zener diode if the applied reverse bias voltage exceeds 6 volts, then the breakdown is through
avalanche multiplication. Here a thermally generated carrier falls down the junction barrier and acquire
energy from the applied voltage. This collides with a crystal ion and a new electron hole pair gets created.
These in turn may acquire enough energy, collide with another crystal ion and create still another electron
hole pair. This is a cumulative process and known as avalanche multiplication.
35) What is rectifier?
Rectifier is a device, which converts a.c voltage to pulsating D.C voltage, using one or more pn
junction.
36) Define forbidden energy gap.
It is the separation between conduction band and valence band on energy band diagram.
37) Define form factor.
It is the ratio between rms value and average value of voltage or current.
Form factor= Rms value / Average value.
GIT-ECE-BEEE Page 5
GATES INSTITUTE OF TECHNOLOGY, GOOTY
45)Why FET is called voltage controlled device?
The output characteristics of FET is controlled by its input voltage thus it is voltage controlled.
Prepared by:
M.B.Bheema Kumar
Assistant professor
Dept. of ECE
GIT-ECE-BEEE Page 6