2N3055A (NPN),

MJ15015 (NPN),
MJ15016 (PNP)
MJ15015 and MJ15016 are Preferred Devices

Complementary Silicon
High−Power Transistors
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These PowerBaset complementary transistors are designed for
high power audio, stepping motor and other linear applications. These
devices can also be used in power switching circuits such as relay or 15 AMPERE
solenoid drivers, dc−to−dc converters, inverters, or for inductive loads COMPLEMENTARY SILICON
requiring higher safe operating area than the 2N3055. POWER TRANSISTORS
Features 60, 120 VOLTS − 115, 180 WATTS
• Current−Gain − Bandwidth−Product @ IC = 1.0 Adc
fT = 0.8 MHz (Min) − NPN
= 2.2 MHz (Min) − PNP
• Safe Operating Area − Rated to 60 V and 120 V, Respectively
• Pb−Free Packages are Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc TO−204AA (TO−3)
2N3055A 60 CASE 1−07
MJ15015, MJ15016 120 STYLE 1
Collector−Base Voltage VCBO Vdc
2N3055A 100
MJ15015, MJ15016 200
MARKING DIAGRAMS
Collector−Emitter Voltage Base VCEV Vdc
Reversed Biased 2N3055A 100
MJ15015, MJ15016 200
Emitter−Base Voltage VEBO 7.0 Vdc
Collector Current − Continuous IC 15 Adc 2N3055AG MJ1501xG
AYWW AYWW
Base Current IB 7.0 Adc
MEX MEX
Total Device Dissipation @ TC = 25_C PD 115 W
Derate above 25_C 2N3055A 0.65 W/_C

Total Device Dissipation @ TC = 25_C 180

Derate above 25_C 1.03
MJ15015, MJ15016 2N3055A = Device Code
Operating and Storage Junction TJ, Tstg −65 to +200 _C MJ1501x = Device Code
Temperature Range x = 5 or 6
G = Pb−Free Package
THERMAL CHARACTERISTICS A = Assembly Location
Y = Year
Characteristics Symbol Max Max Unit
WW = Work Week
Thermal Resistance, Junction−to−Case RqJC 1.52 0.98 _C/W MEX = Country of Origin
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the ORDERING INFORMATION
Recommended Operating Conditions may affect device reliability. See detailed ordering and shipping information in the package
1. Indicates JEDEC Registered Data. (2N3055A) dimensions section on page 5 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use
Reference Manual, SOLDERRM/D. and best overall value.

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

April, 2006 − Rev. 6 2N3055A/D
 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit

ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
OFF CHARACTERISTICS (Note 2)

ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3) 2N3055A VCEO(sus) 60 − Vdc
(IC = 200 mAdc, IB = 0) MJ15015, MJ15016 120 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
Collector Cutoff Current
ÎÎÎ ÎÎÎÎ ICEO mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ
(VCE = 30 Vdc, VBE(off) = 0 Vdc)

ÎÎÎÎÎÎÎ
ÎÎÎÎ
(VCE = 60 Vdc, VBE(off) = 0 Vdc)
2N3055A
MJ15015, MJ15016
−
−
0.7
0.1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
Collector Cutoff Current (Note 3) 2N3055A ICEV − 5.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
(VCEV = Rated Value, VBE(off) = 1.5 Vdc) MJ15015, MJ15016 − 1.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEV mAdc
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, 2N3055A − 30

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
TC = 150_C) MJ15015, MJ15016 − 6.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current 2N3055A IEBO − 5.0 mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VEB = 7.0 Vdc, IC = 0) MJ15015, MJ15016 − 0.2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased IS/b Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
(t = 0.5 s non−repetitive) 2N3055A 1.95 −
(VCE = 60 Vdc) MJ15015, MJ15016 3.0 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 2 and 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎÎÎÎ
(IC = 4.0 Adc, VCE = 2.0 Vdc)ÎÎÎÎ
ÎÎÎÎ
hFE
10 70
−

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
(IC = 4.0 Adc, VCE = 4.0 Vdc) 20 70
(IC = 10 Adc, VCE = 4.0 Vdc) 5.0 −

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ
Collector−Emitter Saturation Voltage

ÎÎÎÎÎÎÎÎÎÎÎ
(IC = 4.0 Adc, IB = 400 mAdc)
VCE(sat)
− 1.1
Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
(IC = 10 Adc, IB = 3.3 Adc) − 3.0
(IC = 15 Adc, IB = 7.0 Adc) − 5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
Base−Emitter On Voltage

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 4.0 Adc, VCE = 4.0 Vdc)
VBE(on) 0.7 1.8 Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
Current−Gain − Bandwidth Product 2N3055A, MJ15015 fT 0.8 6.0 MHz

ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎÎÎÎÎ
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) MJ15016 2.2 18

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob 60 600 pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SWITCHING CHARACTERISTICS (2N3055A only) (Note 3)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
RESISTIVE LOAD

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Delay Time
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rise Time ÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ
ÎÎÎÎÎ ÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
ÎÎÎÎ (VCC = 30 Vdc, IC = 4.0 Adc,
td

tr
−

−
0.5

4.0
ms

ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎ ÎÎÎÎ
IB1 = IB2 = 0.4 Adc,
Storage Time tp = 25 ms Duty Cycle v 2% ts − 3.0 ms

ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Fall Time
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎÎÎÎ
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
3. Indicates JEDEC Registered Data. (2N3055A)
tf − 6.0 ms

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2
 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

200

PD(AV), AVERAGE POWER DISSIPATION (W)

150

MJ15015
MJ15016
100

50 2N3055A

0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)

Figure 1. Power Derating

VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)

200 2.8
TJ = 25°C
100 TJ = 150°C 2.4
70
hFE , DC CURRENT GAIN

50 2
−55 °C
30 1.6 IC = 1 A 4A 8A
20
VCE = 4.0 V 25°C 1.2
10
7 0.8
5
0.4
3
2 0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)

Figure 2. DC Current Gain Figure 3. Collector Saturation Region

T CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)

3.5 10
TC = 25°C
3
5.0 MJ15016
V, VOLTAGE (VOLTS)

2.5

2
2.0
1.5 2N3055A
VBE(sat) @ IC/IB = 10 MJ15015
1
1.0
VBE(on) @ VCE = 4 V
0.5
VCE(sat) @ IC/IB = 10
0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.1 0.2 0.3 0.5 1.0 2.0
f,

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMPS)

Figure 4. “On” Voltages Figure 5. Current−Gain — Bandwidth Product

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 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

10
7 VCC = 30 V
5 IC/IB = 10
VCC TJ = 25°C
+30 V 3
2

t, TIME (s)
tr

μ
7.5 W
25 ms 1
+13 V SCOPE 0.7
30
0 W 0.5

1N6073 0.3
−11 V
0.2
tr, tf ≤ 10 ns td
−5 V
DUTY CYCLE = 1.0% 0.1
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15
IC, COLLECTOR CURRENT (AMP)

Figure 6. Switching Times Test Circuit Figure 7. Turn−On Time

(Circuit shown is for NPN)

10 400
7 TJ = 25°C
5 2N3055A
3 200 Cib MJ15015
C, CAPACITANCE (pF)

2 ts MJ15016
t, TIME (s)
μ

tf
0.1 100
0.7
0.5 VCC = 30 50 Cob
IC/IB = 10
0.3 IB1 = IB2
0.2 TJ = 25°C 30
0.1 20
0.2 0.3 0.5 0.7 1 2 3 5 7 10 15 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)

Figure 8. Turn−Off Times Figure 9. Capacitances

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 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

COLLECTOR CUT−OFF REGION

NPN PNP
10,000 1000
VCE = 30 V VCE = 30 V
1000 100
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

μ

μ
100 10 TJ = 150°C
TJ = 150°C
10 1.0
100°C 100°C
1.0 0.1 IC = ICES
IC = ICES
REVERSE FORWARD
REVERSE FORWARD
0.1 0.01 25°C
25°C
0.01 0.001
+0.2 +0.1 0 −0.1 −0.2 −0.3 −0.4 −0.5 −0.2 −0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5
VBE, BASE−EMITTER VOLTAGE (VOLTS) VBE, BASE−EMITTER VOLTAGE (VOLTS)
Figure 10. 2N3055A, MJ15015 Figure 11. MJ15016
20 20
30 ms 0.1ms
IC, COLLECTOR CURRENT (AMPS)

IC, COLLECTOR CURRENT (AMP)

10
10
100 ms 5.0
1 ms 1.0ms
5
2.0

100 ms 1.0 100ms

BONDING WIRE LIMIT BONDING WIRE LIMIT
2 THERMAL LIMIT @ TC = 25°C dc THERMAL LIMIT @ TC = 25°C
0.5
(SINGLE PULSE) (SINGLE PULSE)
SECOND BREAKDOWN LIMIT SECOND BREAKDOWN LIMIT dc
1 0.2
10 20 60 100 15 20 30 60 100 120
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 12. Forward Bias Safe Operating Area Figure 13. Forward Bias Safe Operating Area
2N3055A MJ15015, MJ15016

There are two limitations on the power handling ability of The data of Figures 12 and 13 is based on TC = 25_C;
a transistor: average junction temperature and second TJ(pk) is variable depending on power level. Second
breakdown. Safe Operating area curves indicate IC − VCE breakdown pulse limits are valid for duty cycles to 10% but
limits of the transistor that must be observed for reliable must be derated for temperature according to Figure 1.
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.

ORDERING INFORMATION
Device Package Shipping
2N3055A TO−204
2N3055AG TO−204 100 Units / Tray
(Pb−Free)
MJ15015 TO−204
MJ15015G TO−204
(Pb−Free)
100 Units / Tray
MJ15016 TO−204
MJ15016G TO−204
(Pb−Free)

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 2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP)

PACKAGE DIMENSIONS

TO−204 (TO−3)
CASE 1−07
ISSUE Z

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO−204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U E
L −Y− 0.055 0.070 1.40 1.77
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− V 0.131 0.188 3.33 4.77

0.13 (0.005) M T Y M STYLE 1:

PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

PowerBase is a trademark of Semiconductor Components Industries, LLC.

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