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Datasheet
Datasheet
• Single Supply for Read and Write: 2.7V to 3.6 (BV), 3.0 to 3.6V (LV)
• Fast Read Access Time - 70 ns
• Internal Program Control and Timer
• Sector Architecture
– One 16K Byte Boot Block with Programming Lockout
– Two 8K Byte Parameter Blocks
– Two Main Memory Blocks (96K, 128K) Bytes
• Fast Erase Cycle Time - 10 seconds
• Byte By Byte Programming - 30 µs/Byte Typical
•
•
Hardware Data Protection
DATA Polling For End Of Program Detection
2-Megabit
• Low Power Dissipation
– 25 mA Active Current (256K x 8)
– 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles Single 2.7-Volt
Description Battery-Voltage™
The AT49BV/LV002(N)(T) is a 3-volt-only in-system reprogrammable Flash Memory. Flash Memory
Its 2 megabits of memory is organized as 262,144 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70
ns with power dissipation of just 90 mW over the commercial temperature range.
When the device is deselected, the CMOS standby current is less than 50 µA. For the AT49BV002
DIP Top View
(continued) AT49LV002
Pin Configurations
*RESET 1 32 VCC AT49BV002N
Pin Name Function A16 2 31 WE
A0 - A17 Addresses
A15
A12
A7
3
4
5
30
29
28
A17
A14
A13
AT49LV002N
CE Chip Enable
A6
A5
A4
6
7
8
27
26
25
A8
A9
A11
AT49BV002T
OE Output Enable A3 9 24 OE
WE Write Enable
A2
A1
10
11
23
22
A10
CE
AT49LV002T
A0 12 21 I/O7
A17
WE
A11 1 32 OE
A9 2 31 A10
A8 3 30 CE
4
3
2
1
32
31
30
A5 15 18 A2
A4 16 17 A3
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
Rev. 0982C–07/98
1
AT49BV/LV002N(T) pin 1 for the DIP and PLCC packages The device is erased by executing the erase command
and pin 9 for the TSOP package are don’t connect pins. sequence; the device internally controls the erase opera-
To allow for simple in-system reprogrammability, the tions. There are two 8K byte parameter block sections and
AT49BV/LV002(N)(T) does not require high input voltages two main memory blocks.
for programming. Five-volt-only commands determine the The device has the capability to protect the data in the boot
read and programming operation of the device. Reading block; this feature is enabled by a command sequence.
data out of the device is similar to reading from an EPROM; The 16K-byte boot block section includes a reprogramming
it has standard CE, OE, and WE inputs to avoid bus con- lock out feature to provide data integrity. The boot sector is
tention. Reprogramming the AT49BV/LV002(N)(T) is per- designed to contain user secure code, and when the fea-
formed by erasing a block of data and then programming ture is enabled, the boot sector is protected from being
on a byte by byte basis. The byte programming time is a reprogrammed.
fast 50 µs. The end of a program cycle can be optionally In the AT49BV/LV002N(T), once the boot block program-
detected by the DATA polling feature. Once the end of a ming lockout feature is enabled, the contents of the boot
byte program cycle has been detected, a new access for a block are permanent and cannot be changed. In the
read or program can begin. The typical number of program AT49BV/LV002(T), once the boot block programming lock-
and erase cycles is in excess of 10,000 cycles. out feature is enabled, the contents of the boot block can-
not be changed with input voltage levels of 5.5 volts or less.
Block Diagram
AT49BV/LV002(N) AT49BV/LV002(N)T
DATA INPUTS/OUTPUTS DATA INPUTS/OUTPUTS
I/O7 - I/O0 I/O7 - I/O0
VCC
GND 8 8
OE INPUT/OUTPUT INPUT/OUTPUT
WE CONTROL BUFFERS BUFFERS
CE LOGIC PROGRAM PROGRAM
RESET DATA LATCHES DATA LATCHES
2 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
Device Operation
READ: The AT49BV/LV002(N)(T) is accessed like an CHIP ERASE: If the boot block lockout has been enabled,
EPROM. When CE and OE are low and WE is high, the the Chip Erase function will erase Parameter Block 1,
data stored at the memory location determined by the Parameter Block 2, Main Memory Block 1, and Main Mem-
address pins is asserted on the outputs. The outputs are ory Block 2 but not the boot block. If the Boot Block Lockout
put in the high impedance state whenever CE or OE is has not been enabled, the Chip Erase function will erase
high. This dual-line control gives designers flexibility in pre- the entire chip. After the full chip erase the device will
venting bus contention. return back to read mode. Any command during chip erase
COMMAND SEQUENCES: When the device is first pow- will be ignored.
ered on it will be reset to the read or standby mode SECTOR ERASE: As an alternative to a full chip erase, the
depending upon the state of the control line inputs. In order device is organized into sectors that can be individually
to perform other device functions, a series of command erased. There are two 8K-byte parameter block sections
sequences are entered into the device. The command and two main memory blocks. The 8K-byte parameter
sequences are shown in the Command Definitions table. block sections can be independently erased and repro-
The command sequences are written by applying a low grammed. The two main memory sections are designed to
pulse on the WE or CE input with CE or WE low (respec- be used as alternative memory sectors. That is, whenever
tively) and OE high. The address is latched on the falling one of the blocks has been erased and reprogrammed, the
edge of CE or WE, whichever occurs last. The data is other block should be erased and reprogrammed before
latched by the first rising edge of CE or WE. Standard the first block is again erased. The Sector Erase command
microprocessor write timings are used. The address loca- is a six bus cycle operation. The sector address is latched
tions used in the command sequences are not affected by on the falling WE edge of the sixth cycle while the 30H data
entering the command sequences. input command is latched at the rising edge of WE. The
RESET: A RESET input pin is provided to ease some sys- sector erase starts after the rising edge of WE of the sixth
tem applications. When RESET is at a logic high level, the cycle. The erase operation is internally controlled; it will
device is in its standard operating mode. A low level on the automatically time to completion.
RESET input halts the present device operation and puts BYTE PROGRAMMING: Once the memory array is
the outputs of the device in a high impedance state. If the erased, the device is programmed (to a logical “0”) on a
RESET pin makes a high to low transition during a program byte-by-byte basis. Please note that a data “0” cannot be
or erase operation, the operation may not be sucessfully programmed back to a “1”; only erase operations can con-
completed and the operation will have to be repeated after vert “0”s to “1”s. Programming is accomplished via the
a high level is applied to the RESET pin. When a high level internal device command register and is a 4 bus cycle
is reasserted on the RESET pin, the device returns to the operation (please refer to the Command Definitions table).
read or standby mode, depending upon the state of the The device will automatically generate the required internal
control inputs. By applying a 12V ± 0.5V input signal to the program pulses.
RESET pin, the boot block array can be reprogrammed The program cycle has addresses latched on the falling
even if the boot block lockout feature has been enabled edge of WE or CE, whichever occurs last, and the data
(see Boot Block Programming Lockout Override section). latched on the rising edge of WE or CE, whichever occurs
The RESET feature is not available on the first. Programming is completed after the specified tBP cycle
AT49BV/LV002N(T). time. The DATA polling feature may also be used to indi-
ERASURE: Before a byte can be reprogrammed, the main cate the end of a program cycle.
memory block or parameter block which contains the byte BOOT BLOCK PROGRAMMING LOCKOUT: The device
must be erased. The erased state of the memory bits is a has one designated block that has a programming lockout
logical “1”. The entire device can be erased at one time by feature. This feature prevents programming of data in the
using a 6-byte software code. The software chip erase designated block once the feature has been enabled. The
code consists of 6-byte load commands to specific address size of the block is 16K bytes. This block, referred to as the
locations with a specific data pattern (please refer to the boot block, can contain secure code that is used to bring up
Chip Erase Cycle Waveforms). the system. Enabling the lockout feature will allow the boot
After the software chip erase has been initiated, the device code to stay in the device while data in the rest of the
will internally time the erase operation so that no external device is updated. This feature does not have to be acti-
clocks are required. The maximum time needed to erase vated; the boot block’s usage as a write protected region is
the whole chip is tEC. If the boot block lockout feature has optional to the user. The address range of the boot block is
been enabled, the data in the boot sector will not be 00000 to 03FFF for the AT49BV/LV002(N) while the
erased.
3
address range of the boot block is 3C000 to 3FFFF for the may be accessed by hardware or software operation. The
AT49BV/LV002(N)T. hardware operation mode can be used by an external pro-
Once the feature is enabled, the data in the boot block can grammer to identify the correct programming algorithm for
no longer be erased or programmed with input voltage of the Atmel product.
5.5V or less. Data in the main memory block can still be For details, see Operating Modes (for hardware operation)
changed through the regular programming method. To acti- or Software Product Identification. The manufacturer and
vate the lockout feature, a series of six program commands device code is the same for both modes.
to specific addresses with specific data must be performed. DATA POLLING: The AT49BV/LV002(N)(T) features
Please refer to the Command Definitions table. DATA polling to indicate the end of a program cycle. During
BOOT BLOCK LOCKOUT DETECTION: A software a program cycle an attempted read of the last byte loaded
method is available to determine if programming of the boot will result in the complement of the loaded data on I/O7.
block section is locked out. When the device is in the soft- Once the program cycle has been completed, true data is
ware product identification mode (see Software Product valid on all outputs and the next cycle may begin. DATA
Identification Entry and Exit sections) a read from address polling may begin at any time during the program cycle.
location 00002H will show if programming the boot block is TOGGLE BIT: In addition to DATA polling the
locked out for the AT49BV/LV002(N), and a read from AT49BV/LV002(N)(T) provides another method for deter-
address location 3C002H will show if programming the mining the end of a program or erase cycle. During a pro-
bootblock is locked out for AT49BV/LV002(N)T. If the data gram or erase operation, successive attempts to read data
on I/O0 is low, the boot block can be programmed; if the from the device will result in I/O6 toggling between one and
data on I/O0 is high, the program lockout feature has been zero. Once the program cycle has completed, I/O6 will stop
activated and the block cannot be programmed. The soft- toggling and valid data will be read. Examining the toggle
ware product identification code should be used to return to bit may begin at any time during a program cycle.
standard operation.
HARDWARE DATA PROTECTION: Hardware features
BOOT BLOCK PROGRAMMING LOCKOUT OVERRIDE: protect against inadvertent programs to the
The user can override the boot block programming lockout AT49BV/LV002(N)(T) in the following ways: (a) VCC sense:
by taking the RESET pin to 12 volts during the entire chip if VCC is below 1.8V (typical), the program function is inhib-
erase, sector erase or byte programming operation. When ited. (b) Program inhibit: holding any one of OE low, CE
the RESET pin is brought back to TTL levels the boot block high or WE high inhibits program cycles. (c) Noise filter:
programming lockout feature is again active. This feature is pulses of less than 15 ns (typical) on the WE or CE inputs
not available on the AT49BV/LV002N(T). will not initiate a program cycle.
PRODUCT IDENTIFICATION: The product identification
mode identifies the device and manufacturer as Atmel. It
4 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
Voltage on OE
with Respect to Ground ...................................-0.6V to +13.5V
5
DC and AC Operating Range
AT49LV002(N)(T)-70 AT49BV/LV002(N)(T)-90 AT49BV/LV002(N)(T)-12
VCC Power Supply 3.0V - 3.6V 2.7V - 3.6V/3.0V - 3.6V 2.7V - 3.6V/3.0V - 3.6V
Operating Modes
Mode CE OE WE RESET(6) Ai I/O
Product Identification
DC Characteristics
Symbol Parameter Condition Min Max Units
6 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
AC Read Characteristics
AT49LV002(N)(T)-70 AT49BV/LV002(N)(T)-90 AT49BV/LV002(N)(T)-12
CE
tCE
OE tOE
t DF
tACC tOH
HIGH Z OUTPUT
OUTPUT
VALID
Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.
2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change
without impact on tACC.
3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF).
4. This parameter is characterized and is not 100% tested.
2.4V
1.8K
AC AC OUTPUT
DRIVING 1.5V MEASUREMENT PIN
LEVELS LEVEL 30 pF
0.4V 1.3K
tR, tF < 5
Pin Capacitance
(f = 1 MHz, T = 25°C) (1)
Typ Max Units Conditions
CIN 4 6 pF VIN = 0V
COUT 8 12 pF VOUT = 0V
Note: 1. This parameter is characterized and is not 100% tested.
7
AC Byte Load Characteristics
Symbol Parameter Min Max Units
tAS, tOES Address, OE Set-up Time 0 ns
tAH Address Hold Time 70 ns
tCS Chip Select Set-up Time 0 ns
tCH Chip Select Hold Time 0 ns
tWP Write Pulse Width (WE or CE) 90 ns
tDS Data Set-up Time 70 ns
tDH, tOEH Data, OE Hold Time 0 ns
tWPH Write Pulse Width High 90 ns
OE
tOES tOEH
ADDRESS
tAS tAH
CE tCH
tCS
WE
tWPH
tWP
tDS tDH
DATA IN
CE Controlled
OE
tOES tOEH
ADDRESS
tAS tAH
WE tCH
tCS
CE
tWPH
tWP
tDS tDH
DATA IN
8 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
A0 - A17
CE
tWP tWPH
WE
tDS tEC
DATA AA 55 80 AA 55 Note 3
9
Data Polling Characteristics
Symbol Parameter Min Typ Max Units
tDH Data Hold Time 10 ns
tOEH OE Hold Time 10 ns
(2)
tOE OE to Output Delay ns
tWR Write Recovery Time 0 ns
Notes: 1. These parameters are characterized and not 100% tested.
2. See tOE spec in AC Read Characteristics.
CE
tOEH
OE
tDH tWR
tOE HIGH Z
I/O7
A0-A17 An An An An An
CE
tOEH tOEHP
OE
tDH tOE
HIGH Z
I/O6
tWR
10 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
EXIT PRODUCT
IDENTIFICATION
MODE(4)
11
AT49BV002 Ordering Information
tACC ICC (mA)
(ns) Active Standby Ordering Code Package Operation Range
90 50 0.1 AT49BV002-90JC 32J Commercial
AT49BV002-90PC 32P6 (0° to 70°C)
AT49BV002-90TC 32T
AT49BV002-90VC 32V
50 0.3 AT49BV002-90JI 32J Industrial
AT49BV002-90PI 32P6 (-40° to 85°C)
AT49BV002-90TI 32T
AT49LV002-90VI 32V
120 50 0.1 AT49BV002-12JC 32J Commercial
AT49BV002-12PC 32P6 (0° to 70°C)
AT49BV002-12TC 32T
AT49BV002-12VC 32V
50 0.3 AT49BV002-12JI 32J Industrial
AT49BV002-12PI 32P6 (-40° to 85°C)
AT49BV002-12TI 32T
AT49BV002-12VI 32V
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Thin Small Outline Package (TSOP)
32V 32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
12 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Thin Small Outline Package (TSOP)
32V 32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
13
AT49BV002N Ordering Information
tACC ICC (mA)
(ns) Active Standby Ordering Code Package Operation Range
90 50 0.1 AT49BV002N-90JC 32J Commercial
AT49BV002N-90PC 32P6 (0° to 70°C)
AT49BV002N-90TC 32T
AT49BV002N-90VC 32V
50 0.3 AT49BV002N-90JI 32J Industrial
AT49BV002N-90PI 32P6 (-40° to 85°C)
AT49BV002N-90TI 32T
AT49BV002N-90VI 32V
120 50 0.1 AT49BV002N-12JC 32J Commercial
AT49BV002N-12PC 32P6 (0° to 70°C)
AT49BV002N-12TC 32T
AT49BV002N-12VC 32V
50 0.3 AT49BV002N-12JI 32J Industrial
AT49BV002N-12PI 32P6 (-40° to 85°C)
AT49BV002N-12TI 32T
AT49BV002N-12VI 32V
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Thin Small Outline Package (TSOP)
32V 32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
14 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Thin Small Outline Package (TSOP)
32V 32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
15
AT49BV002T Ordering Information
tACC ICC (mA)
(ns) Active Standby Ordering Code Package Operation Range
90 50 0.1 AT49BV002T-90JC 32J Commercial
AT49BV002T-90PC 32P6 (0° to 70°C)
AT49BV002T-90TC 32T
AT49BV002T-90VC 32V
50 0.3 AT49BV002T-90JI 32J Industrial
AT49BV002T-90PI 32P6 (-40° to 85°C)
AT49BV002T-90TI 32T
AT49BV002T-90VI 32V
120 50 0.1 AT49BV002T-12JC 32J Commercial
AT49BV002T-12PC 32P6 (0° to 70°C)
AT49BV002T-12TC 32T
AT49BV002T-12VC 32V
50 0.3 AT49BV002T-12JI 32J Industrial
AT49BV002T-12PI 32P6 (-40° to 85°C)
AT49BV002T-12TI 32T
AT49BV002T-12VI 32V
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Thin Small Outline Package (TSOP)
32V 32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
16 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Thin Small Outline Package (TSOP)
32V 32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
17
AT49BV002NT Ordering Information
tACC
(ns) ICC (mA) Ordering Code Package Operation Range
90 50 0.1 AT49BV002NT-90JC 32J Commercial
AT49BV002NT-90PC 32P6 (0° to 70°C)
AT49BV002NT-90TC 32T
AT49BV002NT-90VC 32V
50 0.3 AT49BV002NT-90JI 32J Industrial
AT49BV002NT-90PI 32P6 (-40° to 85°C)
AT49BV002NT-90TI 32T
AT49BV002NT-90VI 32V
120 50 0.1 AT49BV002NT-12JC 32J Commercial
AT49BV002NT-12PC 32P6 (0° to 70°C)
AT49BV002NT-12TC 32T
AT49BV002NT-12VC 32V
50 0.3 AT49BV002NT-12JI 32J Industrial
AT49BV002NT-12PI 32P6 (-40° to 85°C)
AT49BV002NT-12TI 32T
AT49BV002NT-12VI 32V
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Thin Small Outline Package (TSOP)
32V 32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
18 AT49BV/LV002(N)(T)
AT49BV/LV002(N)(T)
Package Type
32J 32-Lead, Plastic, J-Leaded Chip Carrier Package (PLCC)
32P6 32-Lead, 0.600" Wide, Plastic Dual In-line Package (PDIP)
32T 32-Lead, Thin Small Outline Package (TSOP)
32V 32-Lead, Thin Small Outline Package (VSOP) (8 x 14 mm)
19
Packaging Information
32J, 32-Lead, Plastic J-Leaded Chip Carrier (PLCC) 32P6, 32-Lead, 0.600" Wide,
Dimensions in Inches and (Millimeters) Plastic Dual In-line Package (PDIP)
JEDEC STANDARD MS-016 AE Dimensions in Inches and (Millimeters)
.530(13.5)
.553(14.0) .566(14.4)
.490(12.4)
.032(.813) .547(13.9) .530(13.5)
.595(15.1) .021(.533)
.026(.660)
.585(14.9) .013(.330)
.090(2.29)
.050(1.27) TYP .030(.762) 1.500(38.10) REF MAX
.300(7.62) REF .015(3.81) .220(5.59)
.430(10.9) .005(.127)
.095(2.41) MAX MIN
.390(9.90) .060(1.52)
AT CONTACT .140(3.56) SEATING
POINTS .120(3.05) PLANE
.065(1.65)
.161(4.09) .015(.381)
.125(3.18)
.022(.559)
.065(1.65) .014(.356)
.022(.559) X 45° MAX (3X)
.110(2.79) .041(1.04)
.090(2.29)
.453(11.5) .630(16.0)
.447(11.4) .590(15.0)
.495(12.6) 0 REF
.485(12.3) 15
.012(.305)
.008(.203)
.690(17.5)
.610(15.5)
32T, 32-Lead, Plastic Thin Small Outline 32V, 32-Lead, Plastic Thin Small Outline
Package (TSOP) Package (VSOP)
Dimensions in Millimeters and (Inches)* Dimensions in Millimeters and (Inches)
INDEX
INDEX
MARK
MARK
18.5(.728) 20.2(.795)
12.5(.492) 14.2(.559)
18.3(.720) 19.8(.780)
12.3(.484) 13.8(.543)
0.50(.020)
0.25(.010) 0.50(.020)
BSC 7.50(.295) 0.25(.010)
0.15(.006) BSC 7.50(.295)
REF 0.15(.006)
REF
8.20(.323)
1.20(.047) MAX 8.10(.319)
7.80(.307) 1.20(.047) MAX
7.90(.311)
0.15(.006)
0.15(.006)
0.05(.002)
0.05(.002)
0 0.20(.008)
5 REF 0 0.20(.008)
0.10(.004) 5 REF
0.10(.004)
0.70(.028)
0.70(.028)
0.50(.020)
0.50(.020)
*Controlling dimension: millimeters
20 AT49BV/LV002(N)(T)