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Trenchmos Transistor Buk7624-55 Standard Level Fet: General Description Quick Reference Data
Trenchmos Transistor Buk7624-55 Standard Level Fet: General Description Quick Reference Data
2 drain
g
3 source
2
mb drain 1 3 s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 kΩ - 55 V
±VGS Gate-source voltage - - 16 V
ID Drain current (DC) Tmb = 25 ˚C - 45 A
ID Drain current (DC) Tmb = 100 ˚C - 31 A
IDM Drain current (pulse peak value) Tmb = 25 ˚C - 180 A
Ptot Total power dissipation Tmb = 25 ˚C - 103 W
Tstg, Tj Storage & operating temperature - - 55 175 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Rth j-mb Thermal resistance junction to - - 1.45 K/W
mounting base
Rth j-a Thermal resistance junction to Minimum footprint, FR4 50 - K/W
ambient board
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
VGS(TO) Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V
Tj = 175˚C 1.0 - - V
Tj = -55˚C - - 4.4
IDSS Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 175˚C - - 500 µA
IGSS Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 1 µA
Tj = 175˚C - - 20 µA
±V(BR)GSS Gate source breakdown voltage IG = ±1 mA; 16 - - V
RDS(ON) Drain-source on-state VGS = 10 V; ID = 25 A - 19 24 mΩ
resistance Tj = 175˚C - - 50 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
gfs Forward transconductance VDS = 25 V; ID = 25 A 4 11 - S
Ciss Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1100 1500 pF
Coss Output capacitance - 280 340 pF
Crss Feedback capacitance - 130 180 pF
td on Turn-on delay time VDD = 30 V; ID = 25 A; - 12 18 ns
tr Turn-on rise time VGS = 10 V; RG = 10 Ω - 19 35 ns
td off Turn-off delay time Resistive load - 25 35 ns
tf Turn-off fall time - 18 25 ns
Ld Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die
Ls Internal source inductance Measured from source lead - 7.5 - nH
soldering point to source bond pad
100 25
16 10 9
ID/A VGS/V =
12 gfs/S
8.5
80 20
8.0
7.5
60 15
7.0
40 6.5 10
6.0
20 5
5.5
5.0
4.5
0 0
0 2 4 VSD/V 6 8 10 0 20 40 ID/A 60 80 100
30
8 1.5
9
25
10
1
20
15 0.5
0 10 20 30 40 50 60 70 80 -100 -50 0 50 100 150 200
ID/A Tmb / degC
Fig.6. Typical on-state resistance, Tj = 25 ˚C. Fig.9. Normalised drain-source on-state resistance.
RDS(ON) = f(ID); parameter VGS a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V
typ.
60
3
min.
40 2
20 1
Tj/C = 175 25
0 0
0 2 4 6 8 10 12 -100 -50 0 50 100 150 200
VGS/V Tj / C
80
1E-02
2% typ 98% 60
1E-03
40
1E-04 Tj/C = 175 25
20
1E-05
1E-06 0
0 0.5 1 1.5
0 1 2 3 4 5 VSDS/V
3 WDSS%
120
110
2.5
100
90
Thousands pF
2 80
70
1.5 60
50
1 40
30
20
5
10
0
0 20 40 60 80 100 120 140 160 180
0.01 0.1 1 VDS/V 10 100 Tmb / C
Fig.12. Typical capacitances, Ciss, Coss, Crss. Fig.15. Normalised avalanche energy rating.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz WDSS% = f(Tmb); conditions: ID = 75 A
12
VGS/V VDD
10
VDS = 14V
+
L
VDS = 44V
8
VDS
6 VGS
-
-ID/100
4 0 T.U.T.
R 01
2 RGS
shunt
0
0 5 10 15 20 25 30 35
QG/nC
Fig.16. Avalanche energy test circuit.
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); conditions: ID = 50 A; parameter VDS WDSS = 0.5 ⋅ LID2 ⋅ BVDSS /(BVDSS − VDD )
VDD
+
RD
VDS
VGS
-
RG
0 T.U.T.
MECHANICAL DATA
11 max
15.4
2.5
MOUNTING INSTRUCTIONS
Dimensions in mm 11.5
9.0
17.5
2.0
3.8
5.08
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.