APT65GP60L2DF2

TYPICAL PERFORMANCE CURVES APT65GP60L2DF2

600V

POWER MOS 7 IGBT

®

TO-264
Max
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs.
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
G
C
• Low Conduction Loss • 100 kHz operation @ 400V, 54A E
C
• Low Gate Charge • 50 kHz operation @ 400V, 76A
• Ultrafast Tail Current shutoff • SSOA rated G

E
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Parameter APT65GP60L2DF2 UNIT

VCES Collector-Emitter Voltage 600

VGE Gate-Emitter Voltage ±20 Volts
VGEM Gate-Emitter Voltage Transient ±30
I C1 Continuous Collector Current 7 @ TC = 25°C 100
I C2 Continuous Collector Current @ TC = 110°C 96 Amps

I CM Pulsed Collector Current 1 @ TC = 150°C 250

SSOA Safe Switching Operating Area @ TJ = 150°C 250A@600V
PD Total Power Dissipation 833 Watts
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
°C
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT

BVCES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250µA) 600

VGE(TH) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25°C) 3 4.5 6
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 25°C) 2.2 2.7
VCE(ON)
Collector-Emitter On Voltage (VGE = 15V, I C = 65A, Tj = 125°C) 2.1
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
1250
I CES µA
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
5500
8-2004

I GES Gate-Emitter Leakage Current (VGE = ±20V) ±100 nA

Rev C

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7440
 DYNAMIC CHARACTERISTICS APT65GP60L2DF2
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
Cies Input Capacitance Capacitance 7400
Coes Output Capacitance VGE = 0V, VCE = 25V 580 pF
Cres Reverse Transfer Capacitance f = 1 MHz 35
VGEP Gate-to-Emitter Plateau Voltage Gate Charge 7.5 V
Qg Total Gate Charge 3 VGE = 15V 210
Qge Gate-Emitter Charge VCE = 300V 50 nC
Qgc Gate-Collector ("Miller ") Charge I C = 65A
65
SSOA Safe Switching Operating Area TJ = 150°C, R G = 5Ω, VGE = 250 A
15V, L = 100µH,VCE = 600V
td(on) Turn-on Delay Time Inductive Switching (25°C) 30
tr Current Rise Time VCC = 400V 55
VGE = 15V ns
td(off) Turn-off Delay Time 90
I C = 65A
tf Current Fall Time 65
4
R G = 5Ω
Eon1 Turn-on Switching Energy 605
TJ = +25°C
Eon2 Turn-on Switching Energy (Diode) 5
1410 µJ
Eoff Turn-off Switching Energy 6
895
td(on) Turn-on Delay Time Inductive Switching (125°C) 30
tr Current Rise Time VCC = 400V 55
VGE = 15V ns
td(off) Turn-off Delay Time 130
I C = 65A
tf Current Fall Time 90
4
R G = 5Ω
Eon1 Turn-on Switching Energy 605
TJ = +125°C
5
Eon2 Turn-on Switching Energy (Diode) 1925 µJ
Turn-off Switching Energy 6
Eoff 1470
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic MIN TYP MAX UNIT
RΘJC Junction to Case (IGBT) .15
°C/W
RΘJC Junction to Case (DIODE) .67
WT Package Weight 6.10 gm

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. (See Figure 24.)
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. A Combi device is used for the clamping diode as shown in the Eon2 test circuit. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JEDS24-1. (See Figures 21, 23.)
7 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
8-2004
Rev C
050-7440
TYPICAL PERFORMANCE CURVES APT65GP60L2DF2
100 100
VGE = 15V. VGE = 10V.
250µs PULSE TEST 90 250µs PULSE TEST
90 <0.5 % DUTY CYCLE <0.5 % DUTY CYCLE

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

80 80

70 70

60 60

50 50

40 40
TC=25°C
30 TC=-55°C 30
TC=25°C TC=-55°C
TC=125°C
20 20
TC=125°C
10 10
0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
VCE, COLLECTER-TO-EMITTER VOLTAGE (V) VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(VGE = 15V) FIGURE 2, Output Characteristics (VGE = 10V)
250 16
250µs PULSE TEST IC = 65A
<0.5 % DUTY CYCLE

VGE, GATE-TO-EMITTER VOLTAGE (V)

TJ = 25°C
14
IC, COLLECTOR CURRENT (A)

200 VCE=120V
12
VCE=300V
150 10
TJ = -55°C
8
VCE=480V
100 6
TJ = 25°C
4
50
TJ = 125°C 2

0 0
0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250
VGE, GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nC)
FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge
4 3
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)

TJ = 25°C.
250µs PULSE TEST
3.5 <0.5 % DUTY CYCLE IC =130A
2.5
3 IC = 65A
IC =130A
2
2.5 IC = 32.5A
IC = 65A
2 IC = 32.5A 1.5

1.5
1
1
0.5 VGE = 15V.
0.5
250µs PULSE TEST
<0.5 % DUTY CYCLE
0 0
6 8 10 12 14 16 -50 -25 0 25 50 75 100 125
VGE, GATE-TO-EMITTER VOLTAGE (V) TJ, Junction Temperature (°C)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage FIGURE 6, On State Voltage vs Junction Temperature
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN

1.2 300

1.15
IC, DC COLLECTOR CURRENT(A)

250
VOLTAGE (NORMALIZED)

1.10
200
1.05

1.0 150

0.95
100
8-2004

0.9
50
0.85
Rev C

0.8 0
-50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
050-7440

FIGURE 7, Breakdown Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature
 APT65GP60L2DF2
60 160
VGE =15V,TJ=125°C

td (OFF), TURN-OFF DELAY TIME (ns)

140
td(ON), TURN-ON DELAY TIME (ns)
50
VGE= 10V 120
40
100 VGE =10V,TJ=125°C
VGE= 15V

30 80

60 VGE =15V,TJ=25°C
20 VGE =10V,TJ=25°C

VCE = 400V 40
10 TJ = 25°C or 125°C VCE = 400V
RG = 5Ω 20 RG = 5Ω
L = 100 µH L = 100 µH
0 0
10 30 50 70 90 110 130 10 30 50 70 90 110 130
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 10, Turn-Off Delay Time vs Collector Current
160 140
RG =5Ω, L = 100µH, VCE = 400V
TJ = 25 or 125°C,VGE = 10V
140 120 TJ = 125°C, VGE = 10V or 15V

120
100
tr, RISE TIME (ns)

tf, FALL TIME (ns)

100
80
80
60
60
40
40 TJ = 25 or 125°C,VGE = 15V

TJ = 25°C, VGE = 10V or 15V

20 20
RG =5Ω, L = 100µH, VCE = 400V
0 0
10 30 50 70 90 110 130 10 30 50 70 90 110 130
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current FIGURE 12, Current Fall Time vs Collector Current
6000 5000
VCE = 400V VCE = 400V
5500
EOFF, TURN OFF ENERGY LOSS (µJ)

L = 100 µH L = 100 µH
EON2, TURN ON ENERGY LOSS (µJ)

RG = 5 Ω RG = 5 Ω TJ = 125°C, VGE = 10V or 15V

5000 TJ =125°C, VGE=15V
4000
4500
4000 TJ =125°C,VGE=10V

3500 3000

3000
2500 2000
TJ = 25°C, VGE=15V
2000
1500
1000
1000
500 TJ = 25°C, VGE=10V TJ = 25°C, VGE = 10V or 15V
0 0
10 30 50 70 90 110 130 10 30 50 70 90 110 130
ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 14, Turn Off Energy Loss vs Collector Current
9000 6000
VCE = 400V VCE = 400V
Eon2 130A
8000
VGE = +15V VGE = +15V Eon2 130A
SWITCHING ENERGY LOSSES (µJ)

SWITCHING ENERGY LOSSES (µJ)

TJ = 125°C RG = 5 Ω
5000
7000 Eoff 130A

6000 4000

5000
3000
4000 Eoff 130A

3000 Eon2 65A 2000

8-2004

Eon2 65A
2000
Eon2 32.5A 1000 Eoff 65A
1000 Eoff 65A
Eon2 32.5A
Rev C

Eoff32.5A Eoff 32.5A

0 0
0 10 20 30 40 50 -25 0 -50
25 50 75 100 125
RG, GATE RESISTANCE (OHMS) TJ, JUNCTION TEMPERATURE (°C)
050-7440

FIGURE 15, Switching Energy Losses vs. Gate Resistance FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES APT65GP60L2DF2
10,000 300
Cies

IC, COLLECTOR CURRENT (A)

5,000
250
C, CAPACITANCE ( F)

1,000 200
P

Coes
500
150

100 100
50
Cres
50

10 0
0 10 20 30 40 50 0 100 200 300 400 500 600 700
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18, Minimim Switching Safe Operating Area

0.16

0.14 0.9
ZθJC, THERMAL IMPEDANCE (°C/W)

0.12
0.7
0.10

0.08 0.5
Note:
0.06

PDM
0.3 t1
0.04
t2

0.02 0.1 Duty Factor D = t1/t2

0.05 Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
0
10 -5
10
-4
10 -3
10 10-1 -2
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration

187
FMAX, OPERATING FREQUENCY (kHz)

RC MODEL
100
Junction
temp (°C)

0.0683 0.0217F
50
Power
(watts)

0.0822 0.256F
TJ = 125°C
Case temperature(°C) TC = 75°C
D = 50 %
VCE = 400V
RG = 5 Ω

10
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL 10 30 50 70 90 110 130
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector
Current

Fmax = min(f max1 , f max 2 )

0.05
f max1 =
t d (on ) + t r + t d(off ) + t f
Pdiss − Pcond
8-2004

f max 2 =
E on 2 + E off
TJ − TC
Rev C

Pdiss =
R θJC
050-7440
 APT65GP60L2DF2

APT30DF60

Gate Voltage
TJ = 125 C
td(on)
V CC IC V CE
Collector Current
tr

90%

D.U.T. 5% 10% 5%
Collector Voltage

Switching Energy
Figure 21, Inductive Switching Test Circuit

Figure 22, Turn-on Switching Waveforms and Definitions

90% VTEST
*DRIVER SAME TYPE AS D.U.T.
Gate Voltage
TJ = 125 C
Collector Voltage
A
td(off) tf
V CE

90% IC
100uH
V CLAMP B

0 A
10%
Switching Energy Collector Current DRIVER* D.U.T.

Figure 24, EON1 Test Circuit

Figure 23, Turn-off Switching Waveforms and Definitions
8-2004
Rev C
050-7440
TYPICAL PERFORMANCE CURVES APT65GP60L2DF2

ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Symbol Characteristic / Test Conditions APT65GP60L2DF2 UNIT
IF(AV) Maximum Average Forward Current (TC = 99°C, Duty Cycle = 0.5) 30
IF(RMS) RMS Forward Current (Square wave, 50% duty) 49 Amps
IFSM Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) 320

STATIC ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT
IF = 65A 2.82
VF Forward Voltage IF = 130A 3.60 Volts
IF = 65A, TJ = 125°C 2.22
DYNAMIC CHARACTERISTICS
Symbol Characteristic Test Conditions MIN TYP MAX UNIT
trr Reverse Recovery Time I = 1A, di /dt = -100A/µs, V = 30V, T = 25°C
F F R J - 21
ns
trr Reverse Recovery Time - 60
IF = 30A, diF/dt = -200A/µs
Qrr Reverse Recovery Charge nC
VR = 400V, TC = 25°C - 65
IRRM Maximum Reverse Recovery Current - 3 - Amps
trr Reverse Recovery Time ns
- 115
IF = 30A, diF/dt = -200A/µs
Qrr Reverse Recovery Charge nC
VR = 400V, TC = 125°C - 410
IRRM Maximum Reverse Recovery Current Amps
- 7 -
trr Reverse Recovery Time ns
- 49
IF = 30A, diF/dt = -1000A/µs
Qrr Reverse Recovery Charge - 705 nC
VR = 400V, TC = 125°C
IRRM Maximum Reverse Recovery Current - 22 Amps
0.70

0.9
Z JC, THERMAL IMPEDANCE (°C/W)

0.60

0.50 0.7

0.40
0.5
0.30 Note:
PDM

0.3 t1
0.20
t2
0.10 0.1 SINGLE PULSE Duty Factor D = t1/t2
θ

0.05 Peak TJ = PDM x ZθJC + TC

0
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL
Junction
temp (°C)
8-2004

0.378 °C/W 0.00232 J/°C

Power
(watts)
Rev C

0.291 °C/W 0.110 J/°C

Case temperature (°C)

050-7440

FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL

 APT65GP60L2DF2
140 120
TJ = 125°C
60A VR = 400V
120

trr, REVERSE RECOVERY TIME

IF, FORWARD CURRENT 100

100 30A
80
TJ = 150°C 15A
80

(ns)
(A)

TJ = 125°C 60
60
TJ = 25°C 40
40
TJ = -55°C
20
20

0 0
0 1 2 3 4 0 200 400 600 800 1000 1200
VF, ANODE-TO-CATHODE VOLTAGE (V) -diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 26. Forward Current vs. Forward Voltage Figure 27. Reverse Recovery Time vs. Current Rate of Change
900 25
TJ = 125°C TJ = 125°C

IRRM, REVERSE RECOVERY CURRENT

VR = 400V VR = 400V
Qrr, REVERSE RECOVERY CHARGE

800 60A
60A
700 20
30A
600
15
500
(nC)

15A

(A)
400 30A
10
300
15A
200 5
100

0 0
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
-diF /dt, CURRENT RATE OF CHANGE (A/µs) -diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 28. Reverse Recovery Charge vs. Current Rate of Change Figure 29. Reverse Recovery Current vs. Current Rate of Change
1.4 60
Duty cycle = 0.5
TJ = 150°C
1.2 Qrr
50
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)

trr
1.0
trr 40
IF(AV) (A)

0.8
30
IRRM
0.6

Qrr 20
0.4

0.2 10

0.0 0
0 25 50 75 100 125 150 50 75 25 100 125 150
TJ, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 30. Dynamic Parameters vs. Junction Temperature Figure 31. Maximum Average Forward Current vs. CaseTemperature
250
CJ, JUNCTION CAPACITANCE

200

150
(pF)

100
8-2004

50
Rev C

0
1 10 100 200
VR, REVERSE VOLTAGE (V)
050-7440

Figure 32. Junction Capacitance vs. Reverse Voltage

TYPICAL PERFORMANCE CURVES APT65GP60L2DF2

Vr

+18V diF /dt Adjust

APT6017LLL

0V
D.U.T.
30µH trr/Qrr
Waveform

PEARSON 2878
CURRENT
TRANSFORMER

Figure 33. Diode Test Circuit

1 IF - Forward Conduction Current

1 4
2 diF /dt - Rate of Diode Current Change Through Zero Crossing.
Zero
3 IRRM - Maximum Reverse Recovery Current.
5 0.25 IRRM
4 trr - Reverse Recovery Time, measured from zero crossing where diode 3
current goes from positive to negative, to the point at which the straight 2
line through IRRM and 0.25 IRRM passes through zero.

5 Qrr - Area Under the Curve Defined by IRRM and trr.

Figure 34, Diode Reverse Recovery Waveform and Definitions

TO-264 MAXTM(L2) Package Outline

4.60 (.181)
5.21 (.205) 19.51 (.768)
1.80 (.071) 20.50 (.807)
2.01 (.079)

5.79 (.228)
6.20 (.244)
(Cathode)
Collector

25.48 (1.003)
26.49 (1.043)

2.29 (.090)
2.29 (.090) 2.69 (.106)
2.69 (.106)
Gate
19.81 (.780)
21.39 (.842) Collector
(Cathode)
Emitter
8-2004

(Anode)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.59 (.102) 2.79 (.110)
3.00 (.118) 3.18 (.125)
Rev C

5.45 (.215) BSC

2-Plcs.
050-7440

Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.