TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor

July 2008

TIP30/TIP30A/TIP30B/TIP30C
PNP Epitaxial Silicon Transistor
Features
• Complementary to TIP29/TIP29A/TIP29B/TIP29C

1. Base 2. Collector 3. Emitter

Absolute Maximum Ratings TC=25°C unless otherwise noted

Symbol Parameter Value Units

VCBO Collector-Base Voltage : TIP30 - 40 V

: TIP30A - 60 V
: TIP30B - 80 V
: TIP30C - 100 V

VCEO Collector-Emitter Voltage : TIP30 - 40 V

: TIP30A - 60 V
: TIP30B - 80 V
: TIP30C - 100 V

VEBO Emitter-Base Voltage -5 V

IC Collector Current (DC) -1 A

ICP Collector Current (Pulse) -3 A

IB Base Current - 0.4 A

PC Collector Dissipation (TC=25°C) 30 W

Collector Dissipation (Ta=25°C) 2 W

TJ Junction Temperature 150 °C

TSTG Storage Temperature - 65 ~ 150 °C

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP30/TIP30A/TIP30B/TIP30C Rev. A 1
 TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units

VCEO(sus) * Collector-Emitter Sustaining Voltage

: TIP30 IC = -30mA, IB = 0 -40 V
: TIP30A -60 V
: TIP30B -80 V
: TIP30C -100 V

ICEO Collector Cut-off Current

: TIP30/30A VCE = -30V, IB = 0 -0.3 mA
: TIP30B/30C VCE = -60V, IB = 0 -0.3 mA

ICES Collector Cut-off Current

: TIP30 VCE = -40V, VEB = 0 -200 μA
: TIP30A VCE = -60V, VEB = 0 -200 μA
: TIP30B VCE = -80V, VEB = 0 -200 μA
: TIP30C VCE = -100V, VEB = 0 -200 μA

IEBO Emitter Cut-off Current VEB = -5V, IC = 0 -1.0 mA

hFE * DC Current Gain VCE = -4V,IC = -0.2A 40

VCE = -4V, IC = -1A 15 75

VCE(sat) * Collector-Emitter Saturation Voltage IC = -1A, IB = -125mA -0.7 V

VBE(sat) * Base-Emitter Saturation Voltage VCE = -4V, IC = -1A -1.3 V

fT Current Gain Bandwidth Product VCE = -10V, IC = -200mA, f = 1MHz 3.0 MHz
* Pulse Test: PW≤300ms, Duty Cycle≤2%

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP30/TIP30A/TIP30B/TIP30C Rev. A 2
 TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
Typical Characteristics

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

1000 -10000
VCE = -4V IC/IB = 10
hFE, DC CURRENT GAIN

100 -1000 VBE(sat)

10 -100
VCE(sat)

1 -10
-1 -10 -100 -1000 -10000 -1 -10 -100 -1000 -10000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

-10 40

35
IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

IC(MAX) (PULSE)
30

25
1m
s

IC(MAX) (DC)
5m

-1 DC 20
s

15

10
TIP30 VCEO MAX.
TIP30A VCEO MAX.
5
TIP30B VCEO MAX.
TIP30C VCEO MAX.
-0.1 0
-10 -100 0 25 50 75 100 125 150 175 200

o
VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE

Figure 3. Safe Operating Area Figure 4. Power Derating

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP30/TIP30A/TIP30B/TIP30C Rev. A 3
 TIP30/TIP30A/TIP30B/TIP30C — PNP Epitaxial Silicon Transistor
Mechanical Dimensions

TO220

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP30/TIP30A/TIP30B/TIP30C Rev. A 4
 TIP30/TIP30A/TIP30B/TIP30C PNP Epitaxial Silicon Transistor

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com

TIP30/TIP30A/TIP30B/TIP30C Rev. A 5