APM4835

P-Channel Enhancement Mode MOSFET

Features Pin Description

• -30V/-8A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V

S 1 8 D
RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V
• Super High Density Cell Design
S 2 7 D

• Reliable and Rugged

S 3 6 D

•
G 4 5 D
SO-8 Package

SO − 8
Applications S S S

• Power Management in Notebook Computer,

Portable Equipment and Battery Powered G

Systems

D D D D

Ordering and Marking Information P-Channel MOSFET

APM 4835 P ackage C ode

K : S O -8
H a n d lin g C o d e O p e ra tio n J u n c tio n T e m p . R a n g e
C : -5 5 to 1 5 0 ° C
Tem p. R ange H a n d lin g C o d e
P ackage C ode TU : Tube
TR : Tape & Reel

APM 4835 APM 4835

XXXXX X X X X X - D a te C o d e

Absolute Maximum Ratings (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

VDSS Drain-Source Voltage -30
V
VGSS Gate-Source Voltage ±25
ID* Maximum Drain Current – Continuous TA = 25°C -8
A
IDM Maximum Drain Current – Pulsed -50
*Surface Mounted on FR4 Board, t ≤ 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright  ANPEC Electronics Corp. 1 www.anpec.com.tw

Rev. A.2 - Feb., 2003
APM4835

Absolute Maximum Ratings (Cont.) (TA = 25°C unless otherwise noted)

Symbol Parameter Rating Unit

PD Maximum Power Dissipation TA = 25°C 2.5 W
TA = 100°C 1
TJ Maximum Junction Temperature 150
°C
TSTG Storage Temperature Range -55 to 150
RθJA Thermal Resistance - Junction to Ambient 50 °C/W

Electrical Characteristics (TA=25°C unless otherwise noted)

APM4835
Symbol Parameter Test Condition Unit
Min. Typa. Max.
Static
BV DSS Drain-Source Breakdown Voltage VGS =0V, ID= -250µA -30 V
IDSS Zero Gate Voltage Drain Current VDS= -30V, V GS=0V -1 µA
VGS(th) Gate Threshold Voltage VDS=VGS, ID= -250µA -1 -1.5 -2 V
IGSS Gate Leakage Current VGS = ±25V , V DS=0V ±100 nA
VGS = -10V, ID= -8A 16 19
b
RDS(ON) Drain-Source On-state Resistance mΩ
VGS = -4.5V, ID= -5A 24 30
VSD Diode Forward Voltage b
ISD= -3A, VGS =0V -0.7 -1.3 V
a
Dynamic
Qg Total Gate Charge 48 60
VDS= -15V, V GS= -10V,
Q gs Gate-Source Charge 10 nC
ID= -4.6A
Q gd Gate-Drain Charge 9
td(ON) Turn-on Delay Time 16 30
VDD= -25V, ID= -2A,
tr Turn-on Rise Time 17 30
VGEN= -10V, RG=6Ω ns
td(OFF) Turn-off Delay Time 75 120
RL=12.5Ω
tf Turn-off Fall Time 31 80
Ciss Input Capacitance 3800
VGS =0V, VDS =-25V
Coss Output Capacitance 590 pF
Frequency = 1.0MHZ
Crss Reverse Transfer Capacitance 250

Notes
a
: Guaranteed by design, not subject to production testing
b
: Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2%

Copyright  ANPEC Electronics Corp. 2 www.anpec.com.tw

Rev. A.2 - Feb., 2003
APM4835

Typical Characteristics

Output Characteristics Transfer Characteristics

50 50

-VGS=4,5,6,7,8,9,10V
40 40
-ID-Drain Current (A)

-ID-Drain Current (A)

30 30

TJ=125°C
20 20
-V GS=3V

TJ=25°C TJ=-55°C
10 10

0 0
0 2 4 6 8 10 0 1 2 3 4 5
-VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V)

Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current

1.50 0.05
-IDS=250µA
-VGS(th)-Threshold Voltage (V)

RDS(on)-On-Resistance (Ω)

0.04
1.25
(Normalized)

0.03 -VGS=4.5V

1.00
0.02 -VGS=10V

0.75
0.01

0.50 0.00
-50 -25 0 25 50 75 100 125 150 0 10 20 30 40 50
Tj - Junction Temperature (°C) -ID - Drain Current (A)

Copyright  ANPEC Electronics Corp. 3 www.anpec.com.tw

Rev. A.2 - Feb., 2003
APM4835

Typical Characteristics (Cont.)

On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature

0.07 1.8
-ID=8A -VGS=10V
0.06 -ID=8A
RDS(on)-On-Resistance (Ω)

RDS(on)-On-Resistance (Ω)
1.6

0.05
1.4

(Normalized)
0.04
1.2
0.03
1.0
0.02

0.8
0.01

0.00 0.6
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150

-VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (°C)

Gate Charge Capacitance

10 4500
-VDS=15V Frequency=1MHz
-ID=4.6A
-VGS-Gate-Source Voltage (V)

8 3600
Ciss
Capacitance (pF)

6 2700

4 1800

2 900 Coss
Crss

0 0
0 10 20 30 40 50 0 6 12 18 24 30

QG - Gate Charge (nC) -VDS - Drain-to-Source Voltage (V)

Copyright  ANPEC Electronics Corp. 4 www.anpec.com.tw

Rev. A.2 - Feb., 2003
APM4835

Typical Characteristics (Cont.)

Source-Drain Diode Forward Voltage Single Pulse Power

30 100

10 80
-IS-Source Current (Α)

Power (W)
60

TJ=150°C TJ=25°C
1 40

20

0.1 0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10

-VSD-Source-to-Drain Voltage (V ) Time (sec)

Normalized Thermal Transient Impedence, Junction to Ambient

Normalized Effective Transient

1
Duty Cycle = 0.5
Thermal Impedance

D= 0.2

D= 0.1

0.1
D= 0.05

D= 0.02 1.Duty Cycle, D=t1/t2

2.Per Unit Base=RthJA=50°C/W
3.T JM -T A =P DM Z thJA
SINGLE PULSE 4.Surface Mounted

0.01
1E-4 1E-3 0.01 0.1 1 10

Square Wave Pulse Duration (sec)

Copyright  ANPEC Electronics Corp. 5 www.anpec.com.tw

Rev. A.2 - Feb., 2003
APM4835

Packaging Information

SOP-8 pin ( Reference JEDEC Registration MS-012)

0.015X45
E H

e1 e2

A1
A 1

L
0.004max.

Mi ll im et er s Inche s
Dim
Min . Max . Min. Max .
A 1. 35 1. 75 0. 053 0. 069
A1 0. 10 0. 25 0. 004 0. 010
D 4. 80 5. 00 0. 189 0. 197
E 3. 80 4. 00 0. 150 0. 157
H 5. 80 6. 20 0. 228 0. 244
L 0. 40 1. 27 0. 016 0. 050
e1 0. 33 0. 51 0. 013 0. 020
e2 1. 27B S C 0. 50B S C
φ 1 8° 8°

Copyright  ANPEC Electronics Corp. 6 www.anpec.com.tw

Rev. A.2 - Feb., 2003
APM4835

Physical Specifications

Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)

Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

temperature

Peak temperature

183°C
Pre-heat temperature

Time

Classification Reflow Profiles

Convection or IR/ VPR

Convection
Average ramp-up rate(183°C to Peak) 3°C/second max. 10 °C /second max.
Preheat temperature 125 ± 25°C) 120 seconds max
Temperature maintained above 183°C 60 – 150 seconds
Time within 5°C of actual peak temperature 10 –20 seconds 60 seconds
Peak temperature range 220 +5/-0°C or 235 +5/-0°C 215-219°C or 235 +5/-0°C
Ramp-down rate 6 °C /second max. 10 °C /second max.
Time 25°C to peak temperature 6 minutes max.

Package Reflow Conditions

pkg. thickness ≥ 2.5mm
and all bgas
Convection 220 +5/-0 °C
VPR 215-219 °C
IR/Convection 220 +5/-0 °C
pkg. thickness < 2.5mm and
pkg. volume ≥ 350 mm³
pkg. thickness < 2.5mm and pkg.
volume < 350mm³
Convection 235 +5/-0 °C
VPR 235 +5/-0 °C
IR/Convection 235 +5/-0 °C

Copyright  ANPEC Electronics Corp. 7 www.anpec.com.tw

Rev. A.2 - Feb., 2003
APM4835

Reliability test program

Test item Method Description

SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125°C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C
TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles

Carrier Tape & Reel Dimensions t

Po P D
E
P1

F Bo
W

Ao D1 Ko

T2

J
C
A B

T1

Application A B C J T1 T2 W P E
330 ± 1 62 +1.5 12.75+ 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1
0.15
SOP- 8 F D D1 Po P1 Ao Bo Ko t
5.5± 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 2.1± 0.1 0.3±0.013

Copyright  ANPEC Electronics Corp. 8 www.anpec.com.tw

Rev. A.2 - Feb., 2003
APM4835

Cover Tape Dimensions

Application Carrier Width Cover Tape Width Devices Per Reel

SOP- 8 12 9.3 2500

Customer Service

Anpec Electronics Corp.

Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright  ANPEC Electronics Corp. 9 www.anpec.com.tw

Rev. A.2 - Feb., 2003