UNISONIC TECHNOLOGIES CO.

, LTD
75N75 Power MOSFET

80A, 75V N-CHANNEL

POWER MOSFET
1 1

TO-220 TO-220F
 DESCRIPTION
The UTC 75N75 is n-channel enhancement mode power field
effect transistors with stable off-state characteristics, fast switching
speed, low thermal resistance, usually used at telecom and 1 1
computer application.
TO-220F1 TO-220F2

 FEATURES
* RDS(ON) ≤ 11 mΩ @ VGS=10V, ID=40A
* Fast switching capability 1
* Avalanche energy Specified TO-263
* Improved dv/dt capability, high ruggedness

 SYMBOL

2.Drain

1.Gate

3.Source

 ORDERING INFORMATION
Ordering Number Pin Assignment
Package Packing
Lead Free Halogen Free 1 2 3
75N75L-TA3-T 75N75G-TA3-T TO-220 G D S Tube
75N75L-TF1-T 75N75G-TF1-T TO-220F1 G D S Tube
75N75L-TF2-T 75N75G-TF2-T TO-220F2 G D S Tube
75N75L-TF3-T 75N75G-TF3-T TO-220F G D S Tube
75N75L-TQ2-T 75N75G-TQ2-T TO-263 G D S Tube
75N75L-TQ2-R 75N75G-TQ2-R TO-263 G D S Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
75N75G-TA3-T (1) T: Tube, R: Tape Reel
(1)Packing Type (2) TA3: TO-220, TF1: TO-220F1, TF2: TO-220F2,
(2)Package Type (2) TF3: TO-220F, TQ2: TO-263
(3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free

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75N75 Power MOSFET

 MARKING

UTC
75N75 L: Lead Free
G: Halogen Free
Lot Code Date Code
1

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75N75 Power MOSFET

 ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL RATINGS UNIT
Drain-Source Voltage VDSS 75 V
Gate-Source Voltage VGSS ±20 V
Continuous Drain Current TC = 25°C ID 80 A
Pulsed Drain Current (Note 2) IDM 160 A
Single Pulsed Avalanche Energy (Note 3) EAS 525 mJ
Peak Diode Recovery dv/dt (Note 4) dv/dt 4.8 V/ns
TO-220/TO-263 200 W
Power Dissipation TO-220F/ TO-220F1 P D
48 W
TO-220F2
Junction Temperature TJ +175 °C
Storage Temperature TSTG -55 ~ +175 °C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 0.1 mH, IAS = 102A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤ 80A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
 THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient θJA 62.5 °C/W
TO-220/TO-263 0.62 °C/W
Junction to Case TO-220F/ TO-220F1 θJC
2.6 °C/W
TO-220F2

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75N75 Power MOSFET

 ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 75 V
Drain-Source Leakage Current IDSS VDS=75V, VGS=0V 1 µA
Forward VGS=20V, VDS=0V 100 nA
Gate-Source Leakage Current IGSS
Reverse VGS=-20V, VDS=0V -100 nA
ON CHARACTERISTICS
Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA 2.0 4.0 V
Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=40A 9.5 11 mΩ
DYNAMIC CHARACTERISTICS
Input Capacitance CISS 4000 pF
Output Capacitance COSS VGS=0V, VDS=25V, f=1MHz 750 pF
Reverse Transfer Capacitance CRSS 86 pF
SWITCHING CHARACTERISTICS
Total Gate Charge QG 84 nC
VDS=30V, VGS=10V, ID=75A ,
Gate-Source Charge QGS 20 nC
IG=1mA (Note 1, 2)
Gate-Drain Charge QGD 22 nC
Turn-On Delay Time tD(ON) 22 ns
Turn-On Rise Time tR VDD=30V, VGS=10V, ID=75A, 21 ns
Turn-Off Delay Time tD(OFF) RG=25Ω (Note 1, 2) 48 ns
Turn-Off Fall Time tF 18 ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Continuous Source Current IS 80 A
Pulsed Source Current (Note 1) ISM 160 A
Drain-Source Diode Forward Voltage (Note 2) VSD IS =75A, VGS=0V 1.5 V
Reverse Recovery Time trr IS=30A, VGS=0V, 100 ns
Reverse Recovery Charge Qrr dIF/dt=50A/µs 0.65 µC
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating ambient temperature.

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75N75 Power MOSFET
 TEST CIRCUITS AND WAVEFORMS

D.U.T. +

VDS

+
ISD
- L

RG
Driver VDD
* dv/dt controlled by RG
Same Type * ISD controlled by pulse period
VGS as D.U.T. * D.U.T.-Device Under Test

Peak Diode Recovery dv/dt Test Circuit

VGS Period P. W.
D=
(Driver) P.W. Period

VGS= 10V

IFM, Body Diode Forward Current

ISD
(D.U.T.)
di/dt

IRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDS
(D.U.T.) VDD

Body Diode Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

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75N75 Power MOSFET

 TEST CIRCUITS AND WAVEFORMS

RL
VDS VDS
90%
VGS
RG
VDD
10%
D.U.T. VGS
tD(ON) tD(OFF)
Pulse Width≤ 1μs
tR tF
Duty Factor≤0.1%

Switching Test Circuit Switching Waveforms

VGS

QG
Same Type
as D.U.T.

VDS QGS QGD

VGS
DUT

Charge

Gate Charge Test Circuit Gate Charge Waveform

L
VDS
BVDSS
IAS

RD
VDD
ID(t)
VDS(t)
VDD
D.U.T.
tp

tp Time

Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms

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75N75 Power MOSFET

 TYPICAL CHARACTERISTICS

Drain Current vs. Drain-Source Drain-Source On-Resistance vs.

Voltage Gate-Source Voltage
120 30
Note: Note:
110
1.TA=25°C 1.TA=25°C

Drain-Source On-Resistance,
100 2.Pulse test
7.5V 25 2.Pulse test
90
Drain Current, ID (A)

VGS=8~10V
80

RDS(ON) (mΩ)
70 20
60 7V
50 15 75A
ID=30A
40
6.5V
30
10
20
6V
10
0 0
0 0.5 1 1.5 2 2.5 3 5 6 7 8 9 10

Drain-Source Voltage, VDS (V) Gate-Source Voltage, VGS (V)

Gate Charge Characteristics Capacitance Characteristics

10 10000
VDS=30V CISS
9
Gate-Source Voltage, VGS (V)

VGS=10V
8 ID=75A
Capacitance, C (pF)

Pulsed
7 1000 COSS
6
5
4 CRSS
100
3
2
1
0 10
0 10 20 30 40 50 60 70 80 90 0 5 10 15 20 25 30
Total Gate Charge, QG (nC) Drain-Source Voltage, VDS (V)

Drain-Source On-Resistance vs. Breakdown Voltage vs. Junction

Junction Temperature Temperature
25 1.4
VGS=10V ID=0.25mA
Drain-Source Breakdown Voltage

ID=40A Pulsed
Drain-Source On-Resistance,

Pulsed
20
1.2
RDS(ON) (mΩ)

Normalized

15

1
10

5 0.8
25 50 75 100 125 150 25 50 75 100 125 150
Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)

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75N75 Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

Gate Threshold Voltage vs. Source Current vs. Source-Drain

Junction Temperature Voltage
3
ID=0.25mA
Gate Threshold Voltage, VGS(TH) (V)

Pulsed 100
TA=150°C

Source Current, IS (A)

25°C
2.8
10

2.6
1

2.4 0.1
25 50 75 100 125 150 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
Junction Temperature, TJ (°C) Source-Drain Voltage, VSD (V)

Drain Current vs. Gate-Source Drain-Source On-Resistance vs.

Voltage Drain Current
75 12
TA=25°C TA=25°C
VGS=10V
Drain-Source On-Resistance,

Pulsed
60 Pulsed
11
Drain Current, ID (A)

RDS(ON) (mΩ)

45
10
30

9
15

0 8
0 2 4 6 8 10 0 10 20 30 40 50 60 70 80

Gate-Source Voltage, VGS (V) Drain Current, ID (A)

Power Dissipation vs. Junction Drain Current vs. Junction

Temperature Temperature
250 120
TO-263

200
Power Dissipation, PD (W)

Drain Current, ID (A)

80
150

100
40

50

0 0
0 25 50 75 100 125 150 25 50 75 100 125 150
Junction Temperature, TJ (°C) Junction Temperature, TJ (°C)

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75N75 Power MOSFET

 TYPICAL CHARACTERISTICS (Cont.)

Safe Operating Area

1000
TO-263

MAX
Drain Current, ID (A)

Operation in this
100 area is limited by 100us
RDS(ON)

10 1ms
10ms
DC

1
TJ=150°C
TC=25°C
Single Pulse
0.1
0.1 1 10 100
Drain-Source Voltage, VDS (V)

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein .
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.

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