UNIT-I

1. Draw and explain the energy band diagrams for extrinsic semiconductor.

2. (a) With neat diagrams, explain the operation of p-n junction diode considering different biasing conditions.

3. Discuss PN diode VI characteristics & temperature dependence of PN diode VI characteristics with neat
sketch.

4. With a neat diagram, explain the energy band diagram of PN junction diode.

5. With the help of necessary equations, explain the terms Drift Current and Diffusion Current.

6. Explain the implementation of logic gates using diode.

UNIT-II

1. Draw the basic structure and equivalent circuit of UJT, explain how the UJT can be used as negative resistance
device with the aid of static characteristics.

2. Discuss about zener diode and explain its characteristics & operation as voltage regulator.
Explain construction and operation of a bridge rectifier and derive its expressions.

3. With the help of a neat circuit diagram, input and output waveforms, describe the operation of Half-wave
rectifier.

4. Design a Full-wave center-tap rectifier with capacitor filter and then explain its operation.

5. Derive the expression for ripple factor of a Full-wave center-tap rectifier with capacitor filter and then
comment on the result.
6. Explain the operation of BJT. Give the relationship between α, β and ϒ of a transistor.
7. Explain the operation of CC configuration of BJT and its input and output characteristics briefly.

8. With a neat circuit diagram, explain the CE configuration of BJT. Also draw and explain its input and output
characteristics.

UNIT-III

1. Design a common emitter BJT circuit with self bias and then explain its operation.

2. What is DC load line and AC load line? Explain the criteria for fixing operating point.

3. Discuss about self bias circuit and derive expression for stability factor.
4. What is a biasing circuit? Explain the fixed bias and collector to base bias circuits in detail.

5. Discuss generalized analysis of transistor amplifier model using h-parameters.

6. Draw the basic CE amplifier circuit and its equivalents h-parameter model. Derive an expression for its Ri
and Ro.

7. Find expressions for voltage gain, current gain, input impedance and output impedance of CB amplifier using
simplified hybrid model?

UNIT-IV

1. With neat diagrams, explain the construction and operating characteristics of EMOSFET.

2. Detail the construction of an n-channel MOSFET of depletion type. Draw and explain its characteristics.

3. With neat sketch explain the operation & drain characteristics of Enhancement MOSFET.

4. With neat sketch explain the operation & drain characteristics of Depletion MOSFET.

UNIT-V
1. Draw the small signal equivalent circuit of MOSFET.
2. Explain the operation of common source amplifier and derive voltage gain, input impedance and output
impedance.
3. Explain the operation of common gate amplifier and derive voltage gain, input impedance and output
impedance.
4. Explain the biasing of MOSFET.