Download as pdf or txt
Download as pdf or txt
You are on page 1of 9

Thin Solid Films 518 (2010) 6705–6713

Contents lists available at ScienceDirect

Thin Solid Films


j o u r n a l h o m e p a g e : w w w. e l s ev i e r. c o m / l o c a t e / t s f

Special feature

Cold atmospheric plasma: Sources, processes, and applications


L. Bárdos, H. Baránková ⁎
Uppsala University, Ångström Laboratory, Plasma Group, Box 534, SE-751 21 Uppsala, Sweden

a r t i c l e i n f o a b s t r a c t

Available online 14 July 2010 Atmospheric pressure gas discharge plasmas, especially those operated at energy non-equilibrium and
low gas temperatures, have recently become a subject of great interest for a wide variety of
Keywords: technologies including surface treatment and thin-film deposition. A driving force for these
Cold atmospheric plasma developments is the avoidance of expensive equipment required for competing vacuum-based plasma
Non-equilibrium plasma technologies. Although there are many applications where non-equilibrium (cold) plasma at atmo-
Atmospheric plasma sources
spheric and higher pressures represents a substantial advantage, there are also a number of applications
Atmospheric plasma processing
Surface activation
where low-pressure plasmas simply cannot be replaced due to specific properties and limitations of the
Surface treatment and deposition atmospheric plasma and related equipment. In this critical review, the primary principles and
characteristics of the cold atmospheric plasma and differences from vacuum-based plasma processes
are described and discussed to provide a better understanding of the capabilities and limits of emerging
atmospheric plasma technologies.
© 2010 Elsevier B.V. All rights reserved.

Contents

1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6705
2. Generation of non-equilibrium atmospheric and high-pressure plasmas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6706
2.1. Generation of plasma between electrodes—the Paschen curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6707
6706
2.2. Generation of plasma by an electromagnetic field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6707
2.3. Suppressing arcs and streamers in atmospheric plasmas generated with atomic and molecular gases . . . . . . . . . . . . . . . . . 6708
6707
3. Cold atmospheric plasma sources . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6708
3.1. Corona and dielectric barrier discharges (DBD) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6708
3.2. Microwave discharges and atmospheric pressure plasma jets (APPJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6709
6708
3.3. Novel plasma sources for large-area surface treatments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6710
6709
4. Applications of cold atmospheric plasma in surface processing and film deposition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6711
6710
4.1. Surface activation and treatment by atmospheric plasmas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6711
6711
4.2. Deposition of films in atmospheric plasmas . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6712
6711
4.3. Post-treatments of films and particles by atmospheric plasma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6712
5. Novel and emerging applications of the cold atmospheric plasma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6712
6. Conclusions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6713
6712
Acknowledgements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6713
6713
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6713
.

1. Introduction is usually denoted as an electric discharge. The plasma (or more


correctly, the gas discharge plasma) can be characterized as a
When delivering power into a neutral gas, a fraction of gas partially ionized gas containing neutral particles as well as an
particles can be converted (ionized) into charged particles to form equivalent number of negative electrons and positive ions. Note
plasma. The plasma generated by electric or electromagnetic fields that there are also fully ionized plasmas (primarily at low gas
pressures) where all particles are ionized, and also plasmas with
⁎ Corresponding author. negative ions (in electronegative gases), but these will not be
E-mail address: Hana.Barankova@Angstrom.uu.se (H. Baránková). discussed here.

0040-6090/$ – see front matter © 2010 Elsevier B.V. All rights reserved.
doi:10.1016/j.tsf.2010.07.044
6706 L. Bárdos, H. Baránková / Thin Solid Films 518 (2010) 6705–6713

Depending on required applications, there are a wide variety of approximately 103–104 times lower than the mass of ions (mass
plasmas generated under different conditions. One of the most number × proton [or neutron] mass [1.67 × 10− 27 kg]). Therefore,
important characteristics is the gas pressure. At a given gas light and mobile electrons acquire more energy from the incident
temperature, the pressure defines the total density of gas particles electromagnetic field than the heavier ions. In plasmas generated at
and consequently also the probability of mutual collisions among low gas pressures, where the collision frequency is low, electron
particles, i.e. the collision frequency. The higher the gas pressure, energies remain high compared to ion energies (and energies of gas
the higher the collision frequency and hence the higher the particles): this represents non-equilibrium in the plasma. Converse-
probability that with time the particles will reach a steady-state ly, high gas pressures with correspondingly high collision frequen-
energy equilibrium. The first ionization potentials of elements are cies lead to equilibrium (hot) plasmas. At atmospheric and higher
from several eV up to a maximum of 24.6 eV (for He), where the pressures, the most feasible way to create non-equilibrium plasmas
equivalent thermal energy kT of 1 eV corresponds to a tempera- is “pumping” of power selectively to electrons. Methods and systems
ture T of approximately 11,600 K ≈ 11,300 °C. In thermal equilib- for this purpose are described in Section 3.
rium, all particles have the same temperature, including the
neutral gas. Examples are central parts of lightning flashes and the 2.1. Generation of plasma between electrodes—the Paschen curve
core of the sun. However, there are also man-made systems
generating hot (thermal) plasma, like arc torches used in waste Almost all textbooks covering gas discharge plasmas describe
incinerators or well-known electric arcs in welding. The thermal Townsend's theory of gas breakdown and current sustainment in an
plasma is suitable for pyrolytic processes and applications in electric field between negative (cathode) and positive (anode) electro-
metallurgy, high temperature chemistry, thermal spraying, etc. [1– des with separation d, see e.g. [15]. The production of electrons in a
3]. simple diode system is described by two Townsend's coefficients, α and
In a great number of plasma applications, particularly those in which γ. Coefficient α represents the probability that an electron emitted from
the plasma must interact with a solid substrate without damaging it, the the cathode collides along a unit length with a neutral gas particle and
temperature shouldn't exceed roughly 1000 °C; for some applications, forms an ion and an additional electron. Subtracting the initial electron,
the temperature limit is much lower, close to room temperature. In such the total number of ions produced along the distance d is [exp(α d)− 1].
cases, we need relatively “cold” plasma that cannot be in thermal The positive ions are attracted to the cathode and upon impact form
equilibrium. Non-equilibrium plasmas can be generated at low gas secondary electrons with probability γ. Thus γ [exp(α d)− 1] new
pressures where collisions are not so frequent. Diverse low-pressure electrons can be generated by one initial electron and take part in
plasma systems and processes applied to surface processing technolo- subsequent ionizations in an avalanche type process. A simple balance
gies are described in many books, e.g. [4–13], and in a large number of equation for steady-state ionization is then:
articles and reports. Because low-pressure plasma systems require
expensive vacuum systems and pumps, there has been a growing γ ½expðα dÞ – 1 = 1: ð1Þ
interest, mainly over the last two decades, to replace these systems by
non-equilibrium cold atmospheric plasmas. In these collision-based ionizations the coefficient α depends
This article summarizes the primary principles and characteristics of directly on gas pressure p which controls the collision frequency
cold atmospheric plasmas and differences from reduced-pressure (α ∝ p) and inversely on the mean free path λe of electrons (α ∝ 1/λe).
plasmas in order to provide a better understanding of the capabilities As can be seen in Eq. (1), the coefficient γ (production of secondary
and limits of the non-equilibrium atmospheric plasma. A review of electrons) is also very important for ionization and formation of a
several cold atmospheric plasma sources, their capabilities, and steady-state current. γ, often called the secondary electron emission
achieved results is then discussed with particular focus on coating and (SEE) coefficient, depends on a number of factors, e.g. material and
surface processing technologies. temperature of the cathode, the gas, effects of energetic UV radiation,
etc. It also depends on the cathode surface pretreatment (mechanical,
2. Generation of non-equilibrium atmospheric and chemical, thermal, etc.) [16,17]. Note that many ceramic materials have
high-pressure plasmas higher γ coefficients than metals and can generate more electrons
[17,18]. This advantage can be utilized in high frequency AC or pulsed DC
Due to continuous cosmic radiation, there are electron-ion pairs discharges, such as dielectric barrier discharges (DBD) where charge
(ionization) present even in ambient air at normal temperature and buildup on insulator surfaces is periodically removed.
pressure. The ionization rate is affected by radioactive substances both Conditions for breakdown at different gas pressures were first
in the ground and in the air, as well as by cosmic radiation, but is only studied by F. Paschen [19]. The result is the well-known Paschen curve
approximately 107 ion-electron pairs per s per m3 [14]. describing the function of the breakdown voltage VB on the distance d
Any kind of energy can be used for ionization e.g., electrical, thermal, between electrodes and the gas pressure p, i.e. VB = f (pd). For all
optical (e.g., UV light), radioactive (e.g., gamma radiation), X-rays, etc. gases, the Paschen curve has a concave up form indicating that there is
However, the most useful ionization tools are electric or electromagnetic always an optimal value of the product pd at which the breakdown
fields. Accounting only for cosmic radiation, the ionization rate in air is of voltage has its minimum. On both sides of the minimum, the
the order of 106 m− 3 s− 1 ion-electron pairs (1 ion per cm− 3 s− 1). Thus, breakdown voltage increases. At low pressures, the density of gas
dry air is electrically insulating. When applying a voltage of about 30 kV particles available for ionization is low. At high pressures, however,
between electrodes separated by 1 cm in ambient air, i.e. an electric field the collision frequency is high and electrons cannot acquire enough
of 30 kV/cm, electric breakdown and ignition of an atmospheric air energy to ionize along the short path between collisions. The equation
plasma can occur. Such breakdown can have the form of discrete sparks as for the breakdown voltage VB is based on fitting experimental data.
in engine spark plugs, but under certain conditions it is also possible to According to [20], the Paschen equation can be written as:
create a uniform-looking steady glow-type air discharge.
The properties of plasmas, such as the density of charged particles VB = B pd=½lnðA =lnð1+1 = γÞÞ+ lnð pdÞ; ð2Þ
(the densities of negative and positive charges are equal) and their
energies, generally depend on the power, type of power (e.g. AC, DC, where A and B are constants dependent on the type of gas. For air at
pulsed, frequency, etc.), type of gas, etc. The negative electron and room temperature A = 15 cm− 1 Torr− 1, B = 365 V cm− 1 Torr− 1, and
the singly charged positive ion have the same charge (1.6 × 10− 19C), γ = 10− 2 (assuming Cu electrodes). For atmospheric pressure
but different masses. The mass of electrons (9.11 × 10− 31 kg) is (0.1 MPa = 760 Torr) and an electrode separation of d = 1 cm, Eq. (2)
L. Bárdos, H. Baránková / Thin Solid Films 518 (2010) 6705–6713 6707

yields a DC breakdown voltage of VB ≈ 35.5 kV. For an air pressure of surfaces is also less important. Under these conditions, not only is the
1 Torr (133 Pa), the breakdown is VB ≈ 310 V. Both values agree with magnitude of the electric field important (voltage and electrode
experiment. The experimental DC breakdown values for several gases in separation), but also the phase of the electron motion with respect to
a 1 mm gap are: 3.2 kV in air, 1.5 kV in Ar, and 0.75 kV in He, [21]. Note the AC electric field has a governing effect [26,27]. The velocity of
that He exhibits the lowest breakdown voltage, while many molecular oscillating electrons is mobility-controlled, and the mobility is a function
gases need very high voltages (e.g., SF6) and can be used as an insulator. of the gas. The breakdown voltage Vrms is increased considerably when, for
Note also that the breakdown voltage can be decreased in suitable gas example, Ar, O2, or N2 is added to He, despite the lower ionization
mixtures by the Penning effect (an ionization process resulting from potential of the additives, due to additional electron energy loss channels
collisions between excited metastable particles and neutral particles (e.g., electronic excitations, for molecules also vibrational and rotational
which have a lower ionization potential than the excitation potential of excitations, or dissociation) [25]. According to recent studies [28], the
the metastable particles) [22,23]. dependence of the minimum breakdown voltage Vrms on frequency
between 2 and 100 MHz has a concave up shape which depends on the
2.2. Generation of plasma by an electromagnetic field distance d between electrodes. At distances exceeding 1 mm, the Vrms
value of the minimum breakdown voltage first decreases with frequency
In DC systems, gas breakdown starts in a stationary electric field up to about 15 MHz, and then increases because rapid oscillations prevent
between electrodes. Due to high collision frequencies at high gas electrons from reaching their maximum kinetic energy. Understanding
pressures, it is nearly impossible to generate a non-equilibrium glow- the details of breakdown mechanisms, particularly at higher frequencies,
type cold plasma by simple DC power. The DC breakdown usually starts in transient regimes (ns and shorter pulses), with complex organic gas
as a transient discharge in the form of a spark and at higher powers it mixtures (e.g. organosilanes with hydrochlorides or hydrocarbons), for
easily turns into a high-current hot arc. plasma enhanced chemical vapor deposition (PECVD) of films, etc., will
Gases can also be ionized by oscillating electromagnetic fields having certainly require further studies.
amplitudes of the electric component high enough for breakdown. Due to
the vastly different mobilities of electrons and ions, at high frequencies the 2.3. Suppressing arcs and streamers in atmospheric plasmas generated
AC fields enable “pumping” of the power selectively to electrons, thus with atomic and molecular gases
enabling a non-equilibrium cold plasma at high gas pressures. The
electromagnetic power (e.g., microwaves) can be radiated into the plasma A typical feature of atmospheric discharges at high voltages between
without need of electrodes (“electrodeless” discharges). Alternatively, the electrodes separated by more than several millimeters is formation of
electrodes in AC discharges can be covered by dielectrics, preventing local arc filaments. These filaments are also called streamers. The
ohmic current and allowing only displacement (convective) current. This streamers are generally more probable in molecular than atomic gases,
approach is used in DBD systems (see Section 3). because of additional power absorption channels in molecules (rotation,
With some simplifications, the principles valid for DC breakdown can vibration, excitation, dissociation, and ionization) compared to atoms
also be applied for AC breakdown between electrodes. Fig. 1 shows (excitation and ionization), [21,29]. A picture of intense arc streamers in
experimental peak-to-peak values Vpp of the minimum breakdown a pulsed DC air plasma (5 kV, 3 kHz) generated in a 1.5 mm gap between
voltage in an RF powered fused hollow cathode system at atmospheric electrodes is shown in Fig. 2.
pressure (see Section 3.3) plotted as a function of the SEE coefficients of Properties of streamers, for example the propagation velocity, the
individual gases for a W cathode, [24]. Once a steady-state current is diameter, branching and shape, are primarily affected by the applied
sustained, the voltage is considerably lower. In AC breakdown studies, voltage, electrode separation, and content of molecular gas, e.g. O2 in a
root mean square voltages Vrms are often used instead of Vpp, but there
pffiffiffi is a He carrier gas [30]. It is interesting to note that streamers can be thought
simple relation between these values for sine waveforms, Vpp =2 2Vrms. of as “micro-lightning”. The 30 kA currents in a typical lightning flash
It is also seen in Fig. 1 that Vpp for gas breakdown is lower at higher with current channel diameters of about 0.1 m (1–10 m is the light
frequency. Detailed studies reported in [25] show that the breakdown channel diameter) in thunderstorms compare well with 1 mm diameter
voltage (given in Vrms values), which depends on the gas, decreases with air streamers having a current of 3 A. The current density in both
AC frequency due to a change in the electron loss mechanism. At high gas “flashes” is 1.2 kA/cm2. In addition, streamers often exhibit branching,
pressures, the electrons make many collisions per oscillation, thus the similar to lightning flashes, and both are quite noisy.
motions of electrons and the electron loss are very much controlled by The streamers make the plasma strongly non-uniform and are not
diffusion. Therefore, the production of secondary electrons at electrode desirable for surface treatments since hot streamer arcs can damage
surfaces, especially for soft materials such as polymers. There are
several options for avoiding streamers, stabilizing the discharge, and
forming glow-type plasmas at atmospheric pressure. The most useful
approaches are listed below.
i. Using high-frequency AC fields or short-pulsed DC power. An
example is the use of microwave power (2.45 GHz) which has a
stabilizing effect on volume ionization without introducing
electrode-based secondary electrons. Depending on the gas

Fig. 1. Peak-to-peak voltages Vpp for ignition and operation of an RF-powered fused
hollow cathode (FHC) at atmospheric pressure vs. the secondary electron emission Fig. 2. Arc streamers in an air plasma generated by a pulsed DC voltage of 5 kV at 3 kHz
coefficients for air, N2, Ar, and Ne discharges on W [24]. in a gap width of 1.5 mm.
6708 L. Bárdos, H. Baránková / Thin Solid Films 518 (2010) 6705–6713

used, atmospheric microwave plasma columns often have a Fast ICCD (intensified charge coupled device) camera observations
tendency for axial contractions. However, the radially-contracted with 100 ns exposure time and 1000 shots accumulated to form one
tubular noble gas discharge can be converted into a fully picture reveal an interesting feature in atmospheric pressure plasma jets
expanded discharge by admixing another noble gas having a (APPJ) operated in He and Ar. The homogeneous-looking plasma is
lower ionization potential [31]. The required content of the actually not homogeneous. It operates like a “plasma gun”, blowing fast
minority gas is below 1% and its optimum value is specific to the small “plasma bullets” out of a nozzle [43]. While this feature may not limit
noble gas used. In pulsed DC plasmas, pulse parameters can the surface processing abilities of plasma jets, it is certainly important for
strongly affect streamer formation. Streamers were found to the selection of gas inlet positions and gas type. Laminar gas flow is very
appear after about 100 ns [32]. It is therefore possible to suppress important for transport of activated species from the plasma jet to the
the streamers by short (≤ 10 ns) pulses, where arcs do not have surface without substantial mixing with ambient air [43].
sufficient time to develop. Contrary to plasmas at reduced gas pressures available in large
ii. Using dielectric barriers on AC electrodes in Dielectric Barrier volumes, the short mean free paths at atmospheric pressure limit the
Discharge arrangements (Section 3.1) with displacement currents. volume and the impact of the plasma. In applications where three-
The choice of barrier material is very important due to charging dimensional objects are to be treated, the decaying and afterglow
effects, Penning ionization effects on surfaces, etc. The performance regions of the flowing plasma must be used with special jet designs
of the barrier is also dependent on the gas and the field frequency. allowing long plasmas [44]. These systems often require massive gas
For example, it has been observed [33] that propagation of a throughputs to prolong plasma columns [37,44] and are typically
discharge is retarded and its channel width is significantly operated with He, which is expensive. An exception is the hybrid plasma
increased when it moves towards a highly-charged dielectric source (Section 3.2). Treatments of large substrates by jet-type plasmas
surface. In an electronegative gas (air), the propagation velocity is require relative motion between the plasma-jet and the substrate. The
two orders of magnitude higher than in He. Formation of desirable plasma source can also be designed as a jet array [45,46].
uniform diffuse-type discharges in air is based on sufficient The plasma density and other parameters of cold atmospheric plasmas
dielectric surface-charge and numerous overlapping partially have been reported in a number of articles, e.g. [31,47–51]. Values of
diffuse breakdowns. Radially expanding streamers then provide plasma densities depend on the type of source, gas, and power, and range
space-charge necessary for self-stabilization of a glow-like plasma from 1011 to 1016 cm− 3 which represents up to approximately 0.1% of the
[34]. As can be expected, an important factor in the performance of total density of neutral particles (≈ 2.7×1019 cm− 3) at atmospheric
the discharge is the dielectric constant of the barrier [35]. pressure. The highest values of plasma density (≈ 6×1017 cm− 3) have
iii. Using high gas flow rates. The gas flow rate controls the been reported for the microwave plasma torch operated at 4 kW power in
residence time of particles in the plasma and power-per- He [51]; however, at such power the plasma can also be quite hot. The
particle values. Flowing gas also has a cooling effect [36]; it electron temperatures reported for different plasmas reach up to several
affects the length of the flowing plasma [37] and can suppress eV [52]. The gas temperature is typically of the order of 103 K [53] and also
or prevent the formation of hot arcs. depends on the source, gas type, and applied power.
iv. Using special electrode shapes with multiple structures having
sharp edges or cones forming high intensity local electric fields 3.1. Corona and dielectric barrier discharges (DBD)
to decrease the breakdown voltage and stabilize a uniform
discharge over the electrode surfaces [38,39]. However, arcs are The most popular cold atmospheric plasma sources are based on
likely to form on these sharp parts and the applied power must DBD, see for example reviews [54,55]. A dielectric barrier at one or both
therefore be optimized to maintain the plasma in a glow electrodes can suppress and, in combination with high frequency
regime. Alternatively, this very principle can be utilized in power, prevent streamers. There are a large number of different designs,
special arc sources (“Glidarc”) for plasma-reactive gas treat- constructions, electrode shapes, and dielectric barriers used in DBD
ments in which pairs of knife-type electrodes generate arc sources for different applications. Some of these systems are schemat-
streamers gliding along the sharp edges [40]. ically shown in Fig. 3. A simple corona (not a DBD) arrangement with
v. Selection of suitable gas. Atmospheric discharges are most streamers is shown in Fig. 3a for comparison with DBD arrangements in
easily sustained in He, due to its small diameter (≈2.8 Å, while Fig. 3b. DBD systems for treatments of moving planar substrates are
the air molecule has a diameter ≈9.7 Å) and, thus, long mean displayed in Fig. 3c and d. For large-area treatments, a multiple DBD
free path compared to other gases, as well as a high SEE arrangement can be used with a pair of grid-shaped electrodes covered
coefficient γ enabling a low breakdown voltage. by an alumina barrier, Fig. 3e [56]. In all DBD systems, the accumulated
surface charges on dielectric barriers must be neutralized, e.g. by bipolar
It is important to note that the efficient suppression of streamers and pulsed DC power in either static or flowing gas regimes.
the formation of an uniform glow-type atmospheric plasma usually
requires combinations of several of the methods described above. 3.2. Microwave discharges and atmospheric pressure plasma jets (APPJ)

As discussed in section 2.2, high-frequency fields have a stabilizing


3. Cold atmospheric plasma sources effect on the plasma and can generate streamerless plasmas in
molecular gases. RF power (13.56 MHz and its harmonics) and
A large number of different sources of cold atmospheric plasma microwave power (typical industrial power oscillators operate at
have been designed and developed since the first DBD reactor was 896 MHz, 915 MHz, 922 MHz, 2.45 GHz, and 5.6 GHz) are often used
built in the 19th century by W. von Siemens for the production of to generate non-equilibrium plasma columns and jets. Some of these
ozone [41]. In addition to the wide variety of DBD plasma sources plasma sources are schematically shown in Fig. 4. The simple microwave
described in the literature, there are many reports about microwave plasma source in Fig. 4a has a tapered waveguide in order to increase the
plasma systems, microhollow cathode systems, various plasma jets, electric field in the quartz reactor passing through this waveguide [57].
plasma arrays, “on-chip” plasmas, etc. Note that for certain applica- More sophisticated systems utilize waveguide-to-coaxial transitions to
tions, it is also possible to utilize the decaying part of a thermal plasma generate plasma jets, see Fig. 4b [58]. The primary disadvantages of the
where the gas temperature is ≤500 °C [42]. However, thermal plasma microwave systems are: (a) high power is often required for plasma
sources usually require considerable power and large gas throughputs generation and (b) the size of the plasma reactor is limited by
which compromise their efficiency as a cold plasma tool. waveguide dimensions. However, the size of the plasma can be enlarged
L. Bárdos, H. Baránková / Thin Solid Films 518 (2010) 6705–6713 6709

3.3. Novel plasma sources for large-area surface treatments

Many atmospheric plasma sources are based on micro-discharges.


Small atmospheric plasma units are multiplexed to form arrays,
integrated in-line systems, or area-distributed systems. An example is
an array of RF-powered DBD jets [66]. Very special systems for
generation of large area plasmas are based on multiple hollow cathodes
integrated to form a fused hollow cathode (FHC) system. Fig. 6a
schematically shows a FHC with integrated open structure and flowing
gas. Many hollow cathodes, powered by a common RF, or a pulsed-DC,
generator, are positioned close to each other so that individual plasmas
can interact [67]. Such an arrangement enables the use of very low RF
power densities (≥ 0.2 W/cm2 for Ne) and low RF breakdown voltages
while maintaining the plasma over the entire electrode surface. The
fused hollow cathodes can be of different shapes. Fig. 6b shows an
example of a rectangular FHC system operated at an RF power of 40 W
with Ne plasma in open air over an electrode area of 115 mm× 18 mm.

Fig. 3. Corona and dielectric barrier discharge (DBD) arrangements. (a) Corona with
streamers; (b) dielectric barriers on electrodes; (c) DBD arrangement for treatment of
large-area planar substrates; (d) DBD arrangement for two-sided treatments; and (e)
multiple grid-type DBD arrangement (200 μm × 200 μm windows). The arrows in (c),
(d), and (e) indicate the direction of substrate motion.

using different resonators with systems of slots distributed, for example,


outside the reactor and radiating the power toward the reactor axis [59].
Fig. 4c shows a typical RF plasma jet source [60,61]. Such sources
can also be arranged with a dielectric barrier on one or both electrode
surfaces [62,63]. The operating frequency of coaxial plasma sources
can be extended up to the microwave range to suppress streamers
and generate glow-type plasmas in molecular gases.
The hybrid plasma source in Fig. 4d combines a microwave
antenna with a hollow cathode powered by an RF, or a pulsed DC,
generator [64]. This source is termed an H-HEAD (hybrid hollow
electrode activated discharge). The microwave plasma is produced
by surface waves and the particle energies can be controlled both
by the microwave power and by the hollow cathode parameters.
Such a source is capable of producing very long plasma columns
(up to 18 cm) at very low gas flows (≤ 250 sccm) and it works
with both monoatomic and molecular gases [65]. Recent results
demonstrate the possibility of operating the source with water Fig. 4. Microwave and radio frequency (RF) plasma sources. (a) Simple rectangular
waveguide arrangement; (b) plasma jets arranged in the waveguide; (c) coaxial RF
vapor or even submerged in water [13]. The plasma generated by plasma jet arranged as a DBD; and (d) hybrid plasma source with surface-wave antenna
an H-HEAD source, with air flowing through the antenna, serving as a pulsed DC hollow cathode. The longer arrows in (b), (c), and (d) indicate
immersed in water contained in an Al vessel, is shown in Fig. 5. the direction of substrate motion.
6710 L. Bárdos, H. Baránková / Thin Solid Films 518 (2010) 6705–6713

Fig. 5. Plasma generated by an H-HEAD source, with 300 sccm air flowing through the
antenna, immersed in water contained in an Al vessel.

Fig. 7. Low-temperature plasma, incident on human skin, generated in Ar at 50 W


microwave power.

4. Applications of cold atmospheric plasma in surface processing


and film deposition

Surface processing and coating by cold atmospheric plasmas


are among the most intensively studied technologies during the
last decade. Primary applications include: (i) surface pretreatment,
cleaning, and activation or passivation; (ii) deposition of films;
and (iii) post-treatment of coated surfaces in order to change the
chemical composition or crystallinity of the coating. Application
capabilities of non-equilibrium atmospheric plasmas are quite
broad due to their gas temperatures ranging from roughly room
temperature to 1000 °C. An example of a low-temperature non-
equilibrium plasma (gas temperature ≤ 50 °C) is the microwave Ar
H-HEAD (2.4 GHz, 50 W) plasma shown touching human skin in
Fig. 7. Low-temperature plasmas have been tested in the
treatment of living tissues, including human tissue sterilization
and blood coagulation [71], as well as in dental applications [72].
They are also suitable for surface treatments of other kinds of
temperature-sensitive surfaces, such as polyethylene (Section 4.2).
Typical cold atmospheric plasmas are suitable for rapid
production of reactive radicals and for plasma-activated reactions
based on radical chemistry. However, there are no ion-assisted
processes such as those in low-pressure plasma processing of
surfaces. Thus, for some applications, an additional post-treatment
Fig. 6. Fused hollow cathode (FHC) plasma source. (a) Schematic arrangement of an (e.g. annealing or plasma aftertreatment) of cold-plasma treated
integrated RF hollow cathode system. (b) Rectangular 120-mm-long FHC source, with surfaces is necessary. Film deposition regimes in cold atmospheric
Ne plasma in open air, generated at 40 W. plasma are generally based on plasma-enhanced chemical vapor
depositions (PECVD). High voltages applied in the plasma at
Employing the methods used in microelectronics and microme- atmospheric pressure can enhance UV radiation, which can lead to
chanics, it is possible to construct special plasma systems using surface and film activation, gas activation, and the production of
multiple small “on-chip” plasma sources distributed over printed- radicals. However, average ion energies are too low for sputtering,
circuit-board plates [68]. Examples of such small-size sources are an and evaporation processes can be applied only in special
RF powered inductively-coupled plasma (ICP) chip [69] and a small arrangements, for example in an H-HEAD source with an
resonator-based microwave source [70]. overheated hollow cathode [64,73].
L. Bárdos, H. Baránková / Thin Solid Films 518 (2010) 6705–6713 6711

4.1. Surface activation and treatment by atmospheric plasmas interference colors show that the oxide thickness reaches approximate-
ly 500 nm after 4 min processing of the Si surface (2 cm from the source)
Activation of substrate surfaces, particularly webs, is perhaps the with an Ar plasma jet in ambient air. In these experiments, traces of TiO2
oldest surface processing application of cold atmospheric plasma. An were deposited near the axis of the oxide spot from the Ti hollow
increased surface energy (decreased contact angle) after plasma cathode [64]. Another example is the rapid surface oxidation of Mo
treatment results in improved adhesion of coatings. For example, the substrates performed using a hybrid atmospheric plasma in air [83]. At a
adhesion of polyethylene terephthalate (PET) and other polymers to substrate temperature close to 500 °C, polycrystalline MoO3 is formed
an epoxy can be increased by a factor of 2× to 10× in peel tests after after several tens of minutes by plasma treatment over much larger
treatment in the afterglow region of a microwave plasma [74]. In this areas than the diameter of the interacting plasma column on the Mo
arrangement, the process rate has been found to be comparable with substrate. Surprisingly, MoO3 is also formed at the opposite side of the
low-pressure plasma treatment [75]. substrate placed on a stainless steel holder.
Processing rates depend, however, on the plasma equipment used.
A dramatic increase in the surface tension of polyethylene (PE) and 4.2. Deposition of films in atmospheric plasmas
polyethylene terephtalate (PET) via processing in a Fused Hollow
Cathode plasma can be detected in less than 1 s [24,76]. Measurements Because of the low ion energies in cold atmospheric plasmas, all
using wetting inks (from Softal Electronic GmbH) according to the coating regimes reported so far are based on PECVD using precursors
standardized procedure DIN 53364 (ISO 8296) [77] show that the diluted primarily in He carrier gas. Most of the results reported so far are
surface tension of PE increases from ≤34 mN/m (approx. 36 mN/m for oxides. For example, amorphous SiO2 films have been grown from
for PET) to values ≥56 mN/m after plasma treatment. Fig. 8 shows a N2 + SiH4 + N2O mixtures on polypropylene substrates [84], and from
comparison of results on a PE surface (a) before and (b) after a 5 s tetramethyldisiloxane (TMDSO), hexamethyldisiloxane (HMDSO), and
exposure to a Ne FHC plasma treatment. A more precise evaluation has tetraethylorthosilicate (TEOS) precursors on polycarbonate and poly-
been carried out by dynamic measurements of the contact angle. A ethylene terephthalate substrates [85] by DBD-based plasma devices.
pendant drop of a precisely defined volume is released after triggering An RF plasma jet has been used to deposit SiO2 with rates up to 300 nm/
and the shape of the sessile drop is scanned very fast, within fractions of min from tetraethoxysilane/He [61]. A large-area commercial coater for
a second (e.g., 40 scans in 8 s). An increase in the surface tension from 2-m-wide polyamide webs using a DBD arrangement with multiple
33.5 mN/m to 57.5 mN/m was measured on PE after a 3 s treatment in open-perimeter flat conductive liquid-based electrodes in a He plasma
Ne+ air FHC plasma [78]. with aerosol sprayed liquid precursors (e.g. alkenes, acrylates) has been
Treatment by DBD plasma can be up to 10 times faster than with reported in reference [86]. By mixing precursors that have multiple
low-pressure plasmas. The plasma treatment can be safely used on polymerizable functional groups, different co-polymer coatings with
polymers before ink printing without any backside damage or highly cross-linked networks have been deposited [86].
pin-holing. Detailed studies show that the wetting of a surface is Table 1 summarizes examples of as-deposited films and
not determined only by the magnitude of its surface energy, but also corresponding atmospheric plasma deposition parameters from refer-
by the free energy of adhesion between the solid and liquid as well as ences [83,84,87–99]. As can be seen, in addition to electrically-insulating
the surface tension of the liquid [79]. Plasma parameters for surface oxides, transparent conductive oxides such as Al-doped ZnO, SnOx, and
treatments must therefore always be carefully optimized. InOx have been grown. ZnO:Al films deposited at 225 °C have a
Due to production of active oxygen species, air atmospheric plasmas resistivity of 3 × 10−2 Ω cm with transparency of 95% over the spectral
can be used for surface oxidation of, for example Si. Such processes could range from 375 nm to 2500 nm [90]. Comparable properties were also
replace thermal oxidation, particularly for complex substrate geome- reported for SnOx and InOx films [91,92]. An elevated substrate
tries. Early attempts to replace thermal oxidation by low-pressure temperature (up to an optimum near 200 °C) was found to be very
microwave plasma oxidation and anodization were reported in the mid important. Similar to vacuum deposition, film properties can be
1960s [80–82]. The atmospheric plasma could be a better solution. An modified further by post-deposition annealing.
example of rapid Si oxidation by the H-HEAD source (200 sccm Ar, Several groups have reported using atmospheric plasma PECVD to
2.4 GHz/250 W, 1 kV/0.2 A/0.5 μs/250 kHz) is presented in Fig. 9. The grow C-based films. It is noteworthy that film deposition can proceed at
very high rates, 40 μm/min was reported in [93]. However, depending
on intended applications, it is desirable to optimize the growth rate with

Fig. 8. Effect of FHC plasma activation on PE web surface. Testing ink balls up and forms Fig. 9. Circular SiO2 region formed in ambient atmosphere on a Si(001) wafer during 4
drops on an untreated surface (surface energy b 34 mN/m), while on the plasma- minutes of interaction with an H-HEAD plasma jet in Ar. Parameters: 200 sccm Ar,
treated surface (surface energy ≥ 56 mN/m) the ink forms a continuous film. 2.4 GHz/250 W, 1 kV/0.2 A/250 kHz.
6712 L. Bárdos, H. Baránková / Thin Solid Films 518 (2010) 6705–6713

Table 1
Examples of films deposited using cold atmospheric plasma.

Film Plasma Power Gases, precursors Rate[nm/min] Year Reference

SiOx 20–50 kHz DBD 10–20 kV Ar + O2 + 0.1% tetramethylsilane (Si[CH3]4) b300 1997 [87] R. Thyen et al.
SiO2 DBD 10 W/cm2 N2 + SiH4 + N2O 12 2000 [84] N. Gherardi et al.
CeOx RF jet in He 360 W (CH3COOH)3Ce in H2O spray 8.33 2003 [88] L. Soukup et al.
TiO2 100 kHz DBD PI 600 W Ti (IV) oxide acetylacetonate (TiO[CH 3COCH = C(O–)CH3]2) in 7.5 2007 [89] C. Jiménez et al.
MOCVD butanol at 0.02–0.1 mol/l
Al:ZnO RF Atomflo™ 40–75 W [diethylzinc (C2H5)2Zn + trimethylaluminum C3H9Al] + O2 in He ≤200 2007 [90] M.D. Barankin et al.
SnOx HV AC DBD ≈ 250 W Mono- or Tetrabutyltin (C16H36Sn) in air at 130 °C ≤ 140 2008 [91] R.Y. Korotkov et al
InOx RF Atomflo™ 110 W Sublimed (185 °C) solid Indium (III) acetylacetonate In(acac)3 in Not given 2008 [92] R.A. Sailer et al
C-polymer Pulse 1:10 DBD 1 ms 10 kV Acetylene (C2H2) b40,000? 1996 [93] J. Salge
F–C polymer 40 kHz DBD 3–18 kV Argon + CF4, C2F6, C2H2F4, C3F8, C3HF7, c-C4F8 “Low” for F/C b 3 2005 [94] I.P. Vinogradov et al.
Teflon-like Surface DBD ≤1 W/cm2 ≈ 95% N2 + 5% C4F8 Not given 2006 [95] P. Kloc et al.
Poly-pyrrole 2 kHz DBD N 0.1 W/cm2 Pyrrole C4H5N monomer in He 30–100 2007 [96] P. Heyse et al.
C n-tubes μW 2.4 GHz 300 W He/H2/CH4&He/H2/CF4(600 °C) 400 2004 [97] A. Matsushita et al.
a-C:H 1 kHz pulse DBD 18 kV 95% H2 + 5% C2H2 ≤1830 2007 [98] S.P. Bugaev et al.
Diamond H-HEAD ≤300 W + pulsed DC Air + C2H2OH (≤500 °C) ≈3 2007 [83] L. Bardos et al.
Si n-cones RF jet 700 nm Unspecified Ar jet + CH4 etching of Fe/Si 30–400 2007 [99] Z. Yang et al.

respect to film properties. Among examples shown in Table 1, carbon optimize plasma parameters, i.e. selection of the plasma gas, power and
nanotubes are of particular interest because of their applications in power mode (pulsed, continuous, frequency, duty cycle), etc. with respect
catalysts, filters, functional coatings, microelectronics, etc. In addition to to the substrate and the desired application.
atmospheric microwave plasma PECVD results [97] in Table 1, where
SiO2 substrates were patterned with a Ni catalyst and held at 600 °C,
5. Novel and emerging applications of the cold atmospheric plasma
there have also been successful attempts to grow C nanotubes on anodic
alumina substrates held at temperature ≤200 °C by a simple DC corona
Cold atmospheric plasmas have many new and promising applica-
discharge (pin-to-plate) in a closed reactor using 10% CH4 in H2 [100].
tions other than surface treatment and film growth. For example, DBD
An array of RF plasma jets in He with C2H2 admixed at the outlet end of
plasmas can induce chemiluminescence and serve as a small gas
the nozzles have been used recently to achieve high-rate nanotube
chromatographic detector sensitive to a broad range of volatile organic
growth (89 μm/min at a power of 40 W) on oxidized p-type silicon
compounds [107]. Examples of other emerging applications of cold
wafers pre-heated to 780 °C, with 10-nm-thick sputtered Fe films acting
atmospheric plasma are in environmental processes, such as conversion
as catalysts [101].
of exhaust gas and plasma catalysis, applications in health care and
Superconductive films were deposited by atmospheric plasma as
therapy (also called “plasma medicine”), chemical treatments of liquids
early as 20 years ago [102,103]. For example, Bi2Sr2Ca2Cu3Ox layers with
and processes with, at, and under water, etc. [13,108].
a critical temperature of 100 K were grown on heated MgO substrates
(730 °C) at rates of 10–20 nm/min from aqueous aerosol solutions of
the nitrates of Bi, Sr, Ca, and Cu in O2 carrier gas. The films were 6. Conclusions
deposited in the decaying part of the 5 kW RF plasma torch, where the
additional heating of the substrate by the plasma was estimated to be Non-equilibrium (cold) atmospheric pressure plasma systems pro-
not more than 150 °C. duce higher plasma densities (1011–1016 cm− 3) than typical densities in
low-pressure plasmas (109–1013 cm− 3), but this still represents not more
than 0.1% of the total density of neutral particles (≈ 2.7×1019 cm− 3)
4.3. Post-treatments of films and particles by atmospheric plasma available at atmospheric pressure. Due to high collision frequencies, the
ion energy in atmospheric plasmas is too low for sputter-based physical
Post-treatments of as-deposited solid films, enhancement of the vapor deposition (PVD) of films or other ion-beam treatments similar to
thermal stability of polymer matrices, and plasma treatments of solid those in low-pressure plasmas. Therefore, the cold atmospheric plasma
particles represent newer applications of atmospheric plasma processing. serves rather as a radical-chemistry based system capable of performing
For example, an atmospheric Ar microplasma jet generated by an RF fast surface activation treatments or PECVD film growth. Without
(13.56 MHz, 35 W) hollow needle electrode (700 μm inner diameter) was substrate heating, the growing films are mostly amorphous. Because of
used to crystallize up to 3-μm-thick a-Si films on Al-coated glass in several a high concentration of reactive oxygen in the plasma, the films deposited
milliseconds due to rapid local surface heating to temperatures outside hermetic reactors are mostly oxides.
1000–1200 °C in less than 1 ms [104]. A DBD air plasma treatment of Cold atmospheric plasmas have many new interesting applications
indium–tin–oxide (ITO) surfaces has been shown to remove carbon such as the generation of nano-sized (≈ 100 nm) plasma jets for etching
contamination and increase the work function of ITO as an alternative to ultrafine trenches [109], or forming special composites of micro-plasmas
the conventional oxygen vacuum plasma process [105]. Similar results and metal wires showing extraordinary properties for electromagnetic
have been obtained using the FHC system [24]. This kind of treatment waves, including a negative-refractive index (metamaterial effects),
seems to require somewhat higher plasma temperature; therefore, the which are not available in nature [110]. Because of the relatively short
decaying parts of the thermal plasma can be more efficient than the cold extension of atmospheric plasmas, large-area surface processing applica-
plasma. However, a recent comparison of microporous polyvinyl chloride tions require multiple plasma sources (e.g. plasma arrays) with
(PVC) composites after surface treatments by CO2 laser (thermal effect) considerable gas consumption. However, these systems can be scaled-
and helium DBD plasma revealed [106] that the cold He plasma has better up without limitations, contrary to low-pressure systems limited by the
ability to penetrate into the PVC microstructure and affect a larger size of vacuum chambers. At the moment, however, cold atmospheric
material thickness. Moreover, the plasma causes no significant modifica- plasmas cannot replace low-pressure plasmas, especially when hard,
tions in the microstructure, such as redistribution of Cl atoms under the dense, crystalline films with controlled texture are required. Thus, the cold
surface, formation of cracks, etc. and clearly has less destructive effects on atmospheric plasma offers a complimentary option to well-established
composite surfaces than the laser. It is therefore always important to low-pressure plasma systems.
L. Bárdos, H. Baránková / Thin Solid Films 518 (2010) 6705–6713 6713

Acknowledgements [49] J. Torres, J.J.A.M. van der Mullen, A. Gamero, A. Sola, Appl.Phys.Lett. 96 (2010)
051501/1–3.
[50] L. Dong, Y. Qi, Z. Zhao, Y. Li, Plasma Sources Sci. Technol. 17 (2008) 015015/1–5.
Financial supports by the Foundation for Strategic Environmental [51] Q. Zhang, G. Zhang, L. Wang, X. Wang, S. Wang, Y. Chen, Appl.Phys.Lett. 95
Research (MISTRA) and by the J. Gust. Richert Foundation are gratefully (2009) 201502/1–3.
[52] M.A. Hassouba, Plasma Devices and Operations 16 (2) (2008) 81.
acknowledged. The authors are thankful to Professor Joe Greene for his [53] H. Baránková, L. Bárdos, Surf. Coat. Technol. 177–178 (2004) 688.
stimulating comments. [54] U. Kogelschatz, Plasma Chem. Plasma Proc. 23 (2003) 1.
[55] R.R. Roth, J. Rahel, X. Dai, D.M. Sherman, J.Phys D:Appl.Phys. 38 (2005) 555.
[56] O. Sakai, Y. Kishimoto, K. Tachibana, J.Phys.D:Appl.Phys. 38 (2005) 431.
References [57] K.M. Green, M.C. Borras, P.P. Woskov, G.J. Flores III, K. Hadidi, P. Thomas, IEEE
Trans. Plasma Sci. 29 (2001) 399.
[1] M. Vardelle, A. Vardelle, P. Fauchais, M.I. Boulos, Amer. Inst. Chem. Eng. J. 29 [58] M. Moisan, Z. Zakrzewski, J.C. Rostaing, Plasma Sources Sci. Technol. 10 (2001) 387.
(1983) 236. [59] IPLAS—Innovative Plasma Systems GmbH, Germany, www.cyrannus.com.
[2] J. Mostaghimi, P. Proulx, M.I. Boulos, Plasma Chem. Plasma Process. 4 (1984) 199. [60] L. Mollwo, Ann. Physik 7 (1958) 97.
[3] M. Hrabovsky, V. Kopecky, V. Sember, T. Kavka, O. Chumak, M. Konrad, IEEE [61] S.E. Babayan, J.Y. Jeong, V.J. Tu, J. Park, G.S. Selwyn, R.F. Hicks, Plasma Sources Sci.
Trans. Plasma Sci. 34 (2006) 1566. Technol. 7 (1998) 286.
[4] L.I. Maissel, R. Glang (Eds.), Handbook of Thin Film Technology, McGraw-Hill [62] M. Laroussi, X. Lu, Appl.Phys.Lett. 87 (2005) 113902/1–3.
Inc., New York, 1970. [63] J.L. Walsh, J.J. Shi, M.G. Kong, Appl.Phys.Lett. 88 (2006) 171501/1–3.
[5] J. Vossen, W. Kern (Eds.), Thin Film Processes, Academic Press Inc., New York, 1978. [64] L. Bárdos, H. Baránková, J. Vac. Sci. Technology A 23 (4) (2005) 933.
[6] B. Chapman, John Wiley&Sons, New York, 1980. [65] H. Baránková, L. Bárdos, J. Vac. Sci. Technology A 24 (4) (2006) 1410.
[7] K. Wasa, S. Hayakawa, Handbook of Sputter Deposition Technology, NOYES [66] K.-D. Weltmann, J. Ehlbeck, R. Foest, M. Stieber, 48th SVC Annual Technical
Publications, Park Ridge, New Yersey, 1992. Conference Proceedings, April 2005, p. 208.
[8] M.H. Francombe, J.L. Vossen (Eds.), Plasma Sources for Thin Film Deposition and [67] H. Baránková, L. Bárdos, Appl. Phys. Lett. 76 (2000) 285.
Etching, Physics of Thin Films, vol.18, ACADEMIC PRESS Inc, San Diego, 1994, edition. [68] T. Ito, T. Izaki, K. Terashima, Thin Solid Films 386 (2001) 300.
[9] M.A. Lieberman, A.J. Lichtenberg, JOHN WILEY&SONS, New York, 1994. [69] J.A. Hopwood, J. Microelectromechanical Syst. 9 (3) (2000) 309.
[10] R.F. Bunshah (Ed.), Handbook of Deposition Technologies for Films and Coatings, [70] R. Gesche, S. Kuhn, H.-E. Porteanu, R. Kovacs, J. Scherer, Proc. 52nd Technical
2nd ed., NOYES Publications, Park Ridge, New Yersey, 1994. Conference SVC, Santa Clara, May 2009, p. 293.
[11] O.A. Popov (Ed.), High Density Plasma Sources, NOYES Publications, Park Ridge, [71] G. Fridman, M. Peddinghaus, H. Ayan, A. Fridman, M. Balasubramanian, A. Gutsol,
New Jersey, 1990. A. Brooks, G. Friedman, Plasma Chem. Plasma Proc. 26 (2006) 425.
[12] R.L. Boxman, D.M. Sanders, P.J. Martin (Eds.), Handbook of Vacuum Arc Science [72] R.E.J. Sladek, E. Stoffels, R. Walraven, P.J.A. Tielbeek, R.A. Koolhoven, IEEE Trens.
and Technology, NOYES Publications, Park Ridge, New Yersey, 1996. Plasma Sci. 32 (2004) 1540.
[13] H. Baránková and L. Bárdos, Chapter 17 in “Handbook of Deposition Technologies [73] H. Baránková, L. Bárdos, Vacuum 80 (2006) 688.
for Films and Coatings: Science, Applications and Technology”, edited by P.J. [74] M.J. Shenton, M.C. Lovell-Hoare, G.C. Stevens, J.Phys.D:Appl.Phys. 34 (2001) 2754.
Martin, 3rd Edition, William Andrew, Elsevier Science and Technology Books, [75] M.J. Shenton, G.C. Stevens, J. Phys, D: Appl. Phys. 34 (2001) 2761.
2009, pp. 870–885. [76] L. Bárdos, H. Baránková, Surf. Coat. Technol. 133–134 (2000) 522.
[14] R.C. Weast, M.J. Astle, W.H. Beyer, eds.: “CRC Handbook of Chemistry and [77] http://www.directindustry.com/prod/arcotec/surface-tension-test-ink-
Physics”, 64th edition, CRC Press Inc., Boca Raton Florida, 1983–1984, F-163 60281-391239.html.
“Atmospheric Electricity” by H. Dolezalek. [78] H. Baránková, L. Bárdos, Surf. Coat. Technol. 146–147 (2001) 486.
[15] Y.P. Raizer, Gas Discharge Physics, Springer-Verlag, Berlin, heidelberg, 1991. [79] J.M. Bradley, J. Phys, D: Appl. Phys. 38 (2005) 2045.
[16] V. Baglin, J. Bojko, O. Gröbner, B. Henrist, N. Hilleret, C. Scheuerlein, M. Taborelli, [80] J.R. Ligenza, J. Appl. Phys. 36 (9) (1965) 2703.
Proceedings of the 7th European Particle Accelerator Conference, EPAC'00, [81] J. Kraitchman, J. Appl. Phys. 38 (11) (1967) 4323.
Invited paper THXF102, Vienna, Austria, June 26–30, 2000, p. 217. [82] L. Bárdos, G. Loncar, I. Stoll, J. Musil, F. Zácek, J.Phys.D:Appl.Phys. 8 (1975) L195.
[17] Suharyanto, Y. Yamano, S. Kobayashi, S. Michizono, Y. Saito, Tamiran, IEEE [83] L. Bárdos, H. Baránková, Plasma Proc. Polym. 4 (2007) 511.
Transactions on Dielectrics and Electrical Insulation 14 (3) (2007) 620. [84] N. Gherardi, S. Martin, F. Massines, J. Phys. D:Appl. Phys. 33 (2000) L104.
[18] Suharyanto,, Y. Yamano, S. Kobayashi, S. Michizono, Y. Saito, IEEE Transactions [85] D.P. Dinega, A.M. Gabelnick, C.A. Lambert, Proc. 46th Technical Conference SVC,
on Dielectrics and Electrical Insulation 13 (1) (2006) 72. 2003, p. 85.
[19] F. Paschen, Weid. Annalen der Physik. 37 (1889) 69. [86] L. O'Neill, S.P. Ryan, L.-A. O'Hare, S.R. Leadley, A.J. Goodwin, Proc. 48th Technical
[20] [20] J. Lux, web data on http://home.earthlink.net/~jimlux/hv/paschen.htm. Conference SVC, Denver,, April 2005, p. 219.
[21] R. Sankaranarayanan, B. Pashaie, S.K. Dhali, Appl. Phys. Lett. 74 (1999) 3119. [87] R. Thyen, A. Weber, C.-P. Klages, Surf. Coat. Technol. 97 (1997) 426.
[22] H.S. Uhm, E.H. Choi, G. Cho, K.W. Whang, Jap.J.Appl.Phys. 40 (2001) L295. [88] L. Soukup, Z. Hubicka, A. Churpita, M. Cada, P. Pokorny, J. Zemek, K. Jurek, L.
[23] G. Bingang, L. Chunliang, S. Zhongxiao, F. Yufeng, X. Xing, L. Liu, F. Duowang, Jastrabík, Surf.Coat.Technol. 169–170 (2003) 571.
Plasma Sci.&Technol. 7 (6) (2005) 3127. [89] C. Jiménez, D. De Barros, A. Darraz, J.-L. Deschanvres, L. Rapenne, P. Chaudouët,
[24] H. Baránková, L. Bárdos, Surf. Coat. Technol. 174–175 (2003) 63. J.E. Méndez, F. Weiss, M. Thomachot, T. Sindzingre, G. Berthomé, F.J. Ferrer,
[25] J. Park, I. Henins, H.W. Hermann, G.S. Selwyn, J. Appl. Phys. 89 (2001) 15. Surf. Coat. Technol. 201 (2007) 8971.
[26] M.A. Herlin, S.C. Brown, Phys. Rev. 74 (1948) 291. [90] M.D. Barankin, E. Gonzalez II, A.M. Ladwig, R.F. Hicks, Solar Energy Materials &
[27] S.C. Brown, Appl. sci. Res. Section B 5 (1955) 97. Solar Cells 91 (2007) 924.
[28] J.L. Walsh, Y.T. Zhang, F. Iza, M.G. Kong, Appl.Phys.Lett. 93 (221505) (2008) 1. [91] R.Y. Korotkov, R. Gupta, P. Ricou, R. Smith, G. Silverman, Thin Solid Films 516
[29] H. Baránková, L. Bárdos, Surf. Coat. Technol. 163–164 (2003) 649. (2008) 4720.
[30] R. Ono, T. Oda, J. Phys, D: Appl. Phys. 36 (2003) 1952. [92] R.A. Sailer, A. Wagner, C. Schmit, N. Klaverkamp, D.L. Schulz, Surf. Coat. Technol.
[31] E. Castanos-Martínez, M. Moisan, Y. Kabouzi, J.Phys.D:Appl.Phys. 42 (2009) 203 (2008) 835.
012003/1–5. [93] J. Salge, Surf. Coat. Technol. 80 (1996) 1.
[32] M.M. Kekez, M.R. Barrault, J.D. Craggs, J.Phys.D:Appl.Phys 3 (1970) 1886. [94] I.P. Vinogradov, A. Lunk, Surf. Coat. Technol. 200 (2005) 660.
[33] M.R. Wertheimer, I. Radu, R. Bartnikas, Proc. 12th Int. Symp. on Electrets, ISE-12, [95] P. Kloc, P. Stahel, V. Bursíková, A. Brablec, Z. Navrátil, M. Síra, J. Janca, Czechosl.J.
September 2005, p. 231, http://ieeexplore.ieee.org/, digital object identifier: Phys. 56 (suppl. B) (2006) 1345.
10.1109/ISE.2005.1612363. [96] P. Heyse, R.l Dams, S. Paulussen, K. Houthoofd, K. Janssen, P.A. Jacobs, B.F. Sels,
[34] J. Ráhel, D.M. Sherman, J.Phys.D:Appl.Phys. 38 (2005) 547. Plasma Proc. Polym. 4 (2007) 145.
[35] M. Toyofuku, Y. Ohtsu, H. Fujita, Jap.J.Appl.Phys. 43 (7A) (2004) 4368. [97] A. Matsushita, M. Nagai, K. Yamakawa, M. Hiramatsu, A. Sakai, M. Hori, T. Goto, S.
[36] Q. Wang, F. Doll, V.M. Donnelly, D.J. Economou, N. Sadeghi, G.F. Franz, J. Phys. D: Zaima, Jap.J.Appl.Phys. 43 (1) (2004) 424.
Appl. Phys. 40 (2007) 4202. [98] S.P. Bugaev, A.D. Korotaev, K.V. Oskomov, N.S. Sochugov, Surf. Coat. Technol. 96
[37] Q. Li, J.-T. Li, W.-C. Zhu, Y.-K. Pu, Appl.Phys.Lett. 95 (2009) 141502/1–3. (1997) 123.
[38] S. Kanazawa, M. Kogoma, T. Moriwaki, S. Okazaki, J.Phys.D:Appl.Phys 21 (1988) 838. [99] Z. Yang, H. Shirai, T. Kobayashi, Y. Hasegawa, Thin Solid Films 515 (2007) 4153.
[39] S. Okazaki, M. Kogoma, M. Uehara, Y. Kimura, J.Phys.D:Appl.Phys. 26 (1993) 889. [100] M.-W. Li, Z. Hu, X.-Z. Wnag, Q. Wu, Y. Chem, J. Mat. Sci Lett. 22 (2003) 1223.
[40] A. Czernichowski, Pure & Appl. Chem. 66 (6) (1994) 1301. [101] S.S. Shin, B.H. Choi, Y.M. Kim, J.H. Lee, D.C. Shin, Microelectronic Engineering 86
[41] W. Siemens, Poggendorff's Ann. Phys. Chem. 102 (1857) 66. (2009) 925.
[42] I. Dani, G. Mader, P. Grabau, B. Dresler, D. Linaschke, E. Lopez, S. Kaskel, E. Beyer, [102] A. Shah, S. Patel, E. Narumi, D.T. Shaw, Appl.Phys.Lett. 57 (1990) 1452.
Contrib. Plasma Phys. 49 (9) (2009) 662. [103] A. Shah, S. Patel, E. Narumi, D.T. Shaw, Appl. Phys. Lett. 62 (1993) 2422.
[43] M. Teschke, J. Kedzierski, E.G. Finantu-Dinu, D. Korzec, J. Engemann, IEEE Trans. [104] Y. Sakurai, T. Kobayashi, Y. Hasegawa, H. Shirai, Jap.J.Appl.Phys. 44 (2005) L749.
Plasma Sci. 33 (2) (2005) 310. [105] J.H. Choi, E.S. Lee, S.H. Choi, H.K. Baik, K.M. Song, Y.S. Lim, S.-M. Lee, J. Vac, Sci.
[44] X. Lu, Z. Jiang, Q. Xiong, Z. Tang, X. Hu, Y. Pan, Appl.Phys.Lett. 92 (2008) 081502/1–2. Technol. A 23 (2005) 1479.
[45] Z. Cao, J.L. Walsh, M.G. Kong, Appl.Phys.Lett. 94 (2009) 021501/1–3. [106] C. Becker, S. Etienne, J. Bour, D. Ruch, F. Aubriet, Eur. Phys. J. Appl. Phys. 43 (2008) 301.
[46] Q.Y. Nie, Z. Cao, C.S. Ren, D.Z. Wang, M.G. Kong, New J.Phys. 11 (2009) 15015/1–14. [107] Y. He, Y. Lv, Y. Li, H. Tang, L. Tang, X. Wu, X. Hou, Anal. Chem. 79 (2007) 4674.
[47] R. Ohyama, M. Sakamoto, A. Nagai, J.Phys.D:Appl.Phys. 42 (2009) 105203/1–4. [108] L. Bárdos, H. Baránková, Vacuum 83 (2009) 522.
[48] T. Shao, K. Long, C. Zhang, J. Wang, D. Zhang, P. Yan, S. Zhang, Journal of [109] R. Kakei, A. Ogino, F. Iwata, M. Nagatsu, Thin Solid Films 518 (2010) 3457.
Electrostatics 67 (2009) 215. [110] O. Sakai, T. Naito, T. Shimomura, K. Tachibana, Thin Solid Films 518 (2010) 3444.

You might also like