Transistors

2SA0777 (2SA777)
Silicon PNP epitaxial planar type

For low-frequency driver amplification Unit: mm

5.9±0.2 4.9±0.2
Complementary to 2SC1509

8.6±0.2
■ Features
• High collector-emitter voltage (Base open) VCEO
• Optimum for the driver stage of a low-frequency and 25 W to 30 W 0.7±0.1

0.7+0.3
–0.2
output amplifier.

13.5±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO −80 V 0.45+0.2
0.45+0.2
–0.1
–0.1

Collector-emitter voltage (Base open) VCEO −80 V (1.27) (1.27)

1 : Emitter
Emitter-base voltage (Collector open) VEBO −5 V 2 : Collector

(3.2)
1 2 3
Collector current IC − 0.5 A 3 : Base
2.54±0.15 EIAJ : SC-51
Peak collector current ICP −1 A TO-92L-A1 Package
Collector power dissipation PC 1 W
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −80 V
Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −80 V
Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5 V
Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA
Forward current transfer ratio *1 hFE1 *2 VCE = −10 V, IC = −150 mA 90 220 
hFE2 VCE = −5 V, IC = −500 mA 50 100
Collector-emitter saturation voltage VCE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V
Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.2 V
Transition frequency fT VCB = −10 V, IE = 50 mA, f = 200 MHz 120 MHz
Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz 11 20 pF
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Palse measurement
*2: Rank classification
Rank Q R
hFE1 90 to 155 130 to 220

Note) The part number in the parenthesis shows conventional part number.

Publication date: November 2002 SJC00004BED 1

2SA0777

PC  Ta IC  VCE IC  I B
1.2 −1.2 −1.2
Ta = 25°C VCE = −10 V
Ta = 25°C
IB = −10 mA
Collector power dissipation PC (W)

1.0 −1.0 −1.0

−9 mA
−8 mA

Collector current IC (A)

Collector current IC (A)

0.8 − 0.8 −7 mA − 0.8
−6 mA
−5 mA
0.6 − 0.6 − 0.6
−4 mA
−3 mA
0.4 − 0.4 − 0.4
−2 mA

0.2 − 0.2 −1 mA − 0.2

0 0 0
0 20 40 60 80 100 120 140 160 0 −2 −4 −6 −8 −10 0 −2 −4 −6 −8 −10
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Base current IB (mA)

VCE(sat)  IC VBE(sat)  IC hFE  IC

−10 −100 300
IC / IB = 10 IC / IB = 10
Collector-emitter saturation voltage VCE(sat) (V)

VCE = −10 V
Base-emitter saturation voltage VBE(sat) (V)

250

Forward current transfer ratio hFE

−1 −10
200 Ta = 75°C
Ta = 75°C
25°C
25°C 25°C
− 0.1 −1 Ta = −25°C 150
75°C −25°C
−25°C
100
− 0.01 − 0.1
50

− 0.001 − 0.01 0
−1 −10 −100 −1 000 −1 −10 −100 −1 000 −1 −10 −100 −1 000
Collector current IC (mA) Collector current IC (mA) Collector current IC (mA)

fT  I E Cob  VCB ICBO  Ta

200
VCB = −10 V 50 104
VCB = −20 V
C (pF)

IE = 0
Ta = 25°C
180 f = 1 MHz
(Common base, input open circuited) ob

Ta = 25°C
Transition frequency fT (MHz)

160 40
103
140
ICBO (Ta = 25°C)

120 30
ICBO (Ta)
Collector output capacitance

100 102

80 20

60
10
40 10

20

0 0 1
1 10 100 −1 −10 −100 0 20 40 60 80 100 120 140 160 180
Emitter current IE (mA) Collector-base voltage VCB (V) Ambient temperature Ta (°C)

2 SJC00004BED
 2SA0777

ICEO  Ta Safe operation area

105 −10
VCE = −10 V Single pulse
Ta = 25°C

104 ICP t = 10 ms
−1

Collector current IC (A)

IC
ICEO (Ta = 25°C)

103
ICEO (Ta)

t=1s
− 0.1

102

− 0.01
10

1 − 0.001
0 20 40 60 80 100 120 140 − 0.1 −1 −10 −100
Ambient temperature Ta (°C) Collector-emitter voltage VCE (V)

SJC00004BED 3
Request for your special attention and precautions in using the technical information
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2002 JUL
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