SCT3060AR

N-channel SiC power MOSFET Datasheet

lOutline
VDSS 650V TO-247-4L

RDS(on) (Typ.) 60mΩ

ID*1 39A
PD 165W (1) (2)(3)(4)

lInner circuit

lFeatures
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
Please note Driver Source and Power Source are
5) Simple to drive not exchangeable. Their exchange might lead to
malfunction.
6) Pb-free lead plating ; RoHS compliant

lPackaging specifications
lApplication Packing Tube

・Solar inverters Reel size (mm) -

・DC/DC converters Tape width (mm) -
Type
・Switch mode power supplies Basic ordering unit (pcs) 30
・Induction heating Taping code C14
・Motor drives Marking SCT3060AR

lAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Value Unit
Drain - Source Voltage VDSS 650 V
*1
Tc = 25°C ID 39 A
Continuous Drain current *1
Tc = 100°C ID 27 A
Pulsed Drain current ID,pulse *2 97 A
Gate - Source voltage (DC) VGSS -4 to +22 V
*3
Gate - Source surge voltage (tsurge < 300ns) VGSS_surge -4 to +26 V
*4
Recommended drive voltage VGS_op 0 / +18 V
Junction temperature Tj 175 °C
Range of storage temperature Tstg -55 to +175 °C

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TSQ50254-SCT3060AR
TSZ22111・14・001 1/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
VGS = 0V, ID = 1mA
Drain - Source breakdown
V(BR)DSS Tj = 25°C 650 - - V
voltage
Tj = -55°C 650 - -
VGS = 0V, VDS =650V
Zero Gate voltage
IDSS Tj = 25°C - 1 10 μA
Drain current
Tj = 150°C - 2 -
Gate - Source
IGSS+ VGS = +22V, VDS = 0V - - 100 nA
leakage current
Gate - Source
IGSS- VGS = -4V, VDS = 0V - - -100 nA
leakage current
Gate threshold voltage VGS (th) VDS = 10V, ID = 6.67mA 2.7 - 5.6 V
VGS = 18V, ID = 13A
Static Drain - Source
RDS(on) *5 Tj = 25°C - 60 78 mΩ
on - state resistance
Tj = 150°C - 86 -
Gate input resistance RG f = 1MHz, open drain - 12 - Ω

lThermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.
Thermal resistance, junction - case RthJC - 0.70 0.91 °C/W

lTypical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
Rth1 8.52×10 -2
Cth1 1.22×10 -3

Rth2 4.15×10 -1
K/W Cth2 6.20×10 -3
Ws/K
Rth3 2.06×10 -1
Cth3 3.49×10 -2

Tj Rth1 Rth,n Tc

PD Cth1 Cth2 Cth,n

Ta

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TSQ50254-SCT3060AR
TSZ22111・15・001 2/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristics (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Transconductance gfs *5 VDS = 10V, ID = 13A - 4.9 - S
Input capacitance Ciss VGS = 0V - 852 -
Output capacitance Coss VDS = 500V - 55 - pF
Reverse transfer capacitance Crss f = 1MHz - 24 -

Effective output capacitance, VGS = 0V

Co(er) - 126 - pF
energy related VDS = 0V to 300V
VDS = 300V
Total Gate charge Qg *5 - 58 -
ID = 13A
*5
Gate - Source charge Qgs VGS = 18V - 11 - nC

See Fig. 1-1.

Gate - Drain charge Qgd *5 - 31 -

VDS = 400V
Turn - on delay time td(on) *5 - 5 -
ID = 13A
*5
Rise time tr VGS = 0V/+18V - 14 -
ns
*5 RG = 0Ω, L = 750μH
Turn - off delay time td(off) - 17 -
Lσ = 50nH, Cσ = 10pF
*5
Fall time tf See Fig. 2-1, 2-2, 2-3. - 13 -

Eon includes diode

Turn - on switching loss Eon *5 - 79 -
reverse recovery.
μJ
*5
Turn - off switching loss Eoff - 18 -

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TSQ50254-SCT3060AR
TSZ22111・15・001 3/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.
Body diode continuous,
IS *1 - - 39 A
forward current
Tc = 25°C
Body diode direct current,
ISM *2 - - 97 A
pulsed
Forward voltage VSD *5 VGS = 0V, ID = 13A - 3.2 - V
IF = 13A
Reverse recovery time trr *5 - 18 - ns
VR = 400V
*5
Reverse recovery charge Qrr di/dt = 2500A/μs - 294 - nC

Lσ = 50nH, Cσ = 10pF
Peak reverse recovery current Irrm *5 - 27 - A
See Fig. 3-1, 3-2.

*1 Limited by maximum temperature allowed.

*2 PW  10μs, Duty cycle  1%

*3 Example of acceptable VGS waveform

Please note especially when using driver source that VGSS_surge must be in the range of
absolute maximum rating.

*4 Please be advised not to use SiC-MOSFETs with VGS below 13V as doing so may cause
thermal runaway.

*5 Pulsed

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TSQ50254-SCT3060AR
TSZ22111・15・001 4/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristic curves

Fig.2 Maximum Safe Operating Area

Fig.1 Power Dissipation Derating Curve

180 1000
Operation in this area is limited by RDS(on)
160
Power Dissipation : PD [W]

140 100

Drain Current : ID [A]

120
100
10 PW = 1μs*
80 PW = 10μs*
PW = 100μs
60
PW = 1ms
40 1 PW = 10ms
Ta = 25ºC
20 Single Pulse
*Calculation(PW10μs)
0 0.1
25 75 125 175 0.1 1 10 100 1000
Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal

Resistance vs. Pulse Width
1
Transient Thermal Resistance :

0.1
ZthJC [K/W]

0.01

Ta = 25ºC
Single Pulse
0.001
0.000001 0.0001 0.01 1 100

Pulse Width : PW [s]

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TSQ50254-SCT3060AR
TSZ22111・15・001 5/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristic curves

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

40 20
20V Ta = 25ºC
20V
18V Pulsed
14V 18V 14V
30 16V 15 16V
Drain Current : ID [A]

Drain Current : ID [A]

Ta = 25ºC
Pulsed
20 10 12V
12V

10V
10 5
10V
VGS= 8V
VGS= 8V
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.6 Tj = 25ºC 3rd Quadrant Characteristics

0
Ta = 25ºC
Pulsed
VGS = -4V
-10 VGS = -2V
Drain Current : ID [A]

VGS = 0V
VGS = 18V

-20

-30

-40
-10 -8 -6 -4 -2 0
Drain - Source Voltage : VDS [V]

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TSQ50254-SCT3060AR
TSZ22111・15・001 6/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristic curves

Fig.7 Tj = 150ºC Typical Output Fig.8 Tj = 150ºC Typical Output

Characteristics(I) Characteristics(II)
40 20
20V 20V
18V 14V 18V 14V
16V
30 16V 15 12V
Drain Current : ID [A]

Drain Current : ID [A]

Ta = 150ºC
10V
12V

20 10V 10

VGS= 8V
10 5
VGS= 8V
Ta = 150ºC
Pulsed
0 0
0 2 4 6 8 10 0 1 2 3 4 5
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.10 Body Diode Forward Voltage

Fig.9 Tj = 150ºC 3rd Quadrant Characteristics
　　　 vs. Gate - Source Voltage
0 6
Body Diode Forward Voltage : VSD [V]

Ta = 150ºC
ID=13A
Pulsed
5
-10 VGS = -4V
Drain Current : ID [A]

VGS = -2V
VGS = 0V 4
VGS = 18V
-20 3

2
Ta= 150ºC
-30
1
Ta= 25ºC
-40 0
-10 -8 -6 -4 -2 0 -4 0 4 8 12 16 20
Drain - Source Voltage : VDS [V] Gate - Source Voltage : VGS [V]

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TSZ22111・15・001 7/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristic curves

Fig.11 Typical Transfer Characteristics (I) Fig.12 Typical Transfer Characteristics (II)

100 40
VDS = 10V VDS = 10V
Pulsed Pulsed

10 30
Drain Current : ID [A]

Drain Current : ID [A]

Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
1 Ta= 150ºC 20 Ta= -25ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1 10

0.01 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

Fig.13 Gate Threshold Voltage

Fig.14 Transconductance vs. Drain Current
vs. Junction Temperature
6 10
VDS = 10V VDS = 10V
Gate Threshold Voltage : V GS(th) [V]

ID = 6.67mA Pulsed
5
Transconductance : gfs [S]

3 1
Ta = 150ºC
2 Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1

0 0.1
-50 0 50 100 150 200 0.1 1 10
Junction Temperature : Tj [ºC] Drain Current : ID [A]

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TSZ22111・15・001 8/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristic curves

Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage Resistance vs. Junction Temperature
0.24 0.12
Ta = 25ºC VGS = 18V
Pulsed Pulsed
Static Drain - Source On-State

Static Drain - Source On-State

0.20
ID= 26A
ID= 26A
Resistance : RDS(on) [Ω]

Resistance : RDS(on) [Ω]

0.16 0.08 ID= 13A

0.12 ID= 13A

ID= -13A
0.08 0.04
ID= -13A
0.04

0.00 0.00
8 10 12 14 16 18 20 22 -50 0 50 100 150 200
Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC]

Fig.17 Static Drain - Source On - State Fig.18 Normalized Drain - Source Breakdown
Resistance vs. Drain Current Voltage vs. Junction Temperature
1 1.04
Static Drain - Source On-State

1.03
Normalized Drain - Source
Resistance : RDS(on) [Ω]

Breakdown Voltage

1.02

0.1 1.01

Ta = 150ºC 1.00
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC 0.99
VGS = 18V
Ta = -25ºC
Pulsed
0.01 0.98
1 10 100 -50 0 50 100 150 200
Drain Current : ID [A] Junction Temperature : Tj [ºC]

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TSZ22111・15・001 9/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristic curves

Fig.19 Typical Capacitance

Fig.20 Coss Stored Energy
　　　　　vs. Drain - Source Voltage
10000 10
Ta = 25ºC

Coss Stored Energy : EOSS [µJ]

Ciss
1000
Capacitance : C [pF]

Coss

100 5
Crss

10 Ta = 25ºC
f = 1MHz
VGS = 0V

1 0
0.1 1 10 100 1000 0 100 200 300 400
Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.21 Dynamic Input Characteristics

*Gate Charge Waveform
20
Ta = 25ºC
VDD = 300V
Gate - Source Voltage : VGS [V]

ID = 13A
15 Pulsed

10

0
0 20 40 60

Total Gate Charge : Qg [nC]

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TSZ22111・15・001 10/12 31.Jul.2019 - Rev.001
 SCT3060AR Datasheet

lElectrical characteristic curves

Fig.22 Typical Switching Time Fig.23 Typical Switching Loss

　　　　　vs. External Gate Resistance 　　　　　vs. Drain - Source Voltage
100 100
Ta = 25°C
Ta = 25°C
ID = 13A
VDD= 400V
80 80 VGS= +18V/0V Eon
VGS= +18V/0V

Switching Energy : E [µJ]

RG = 0Ω
Switching Time : t [ns]

ID = 13A tr
L= 750μH
L= 750μH
60 60

40 td(off) 40
tf

Eoff
20 20

td(on)
0 0
0 10 20 30 100 200 300 400 500
External Gate Resistance : RG [Ω] Drain - Source Voltage : VDS [V]

Fig.24 Typical Switching Loss Fig.25 Typical Switching Loss

　　　　　vs. Drain Current 　　　　　vs. External Gate Resistance
600 600
Ta = 25°C Ta = 25°C
VDD= 400V ID = 13A
VGS= +18V/0V VDD= 400V
Switching Energy : E [µJ]

Switching Energy : E [µJ]

RG = 0Ω VGS= +18V/0V
400 L= 750μH 400 L= 750μH

Eon
200 200
Eon
Eoff

Eoff
0 0
0 10 20 30 40 0 5 10 15 20 25 30
Drain Current : ID [A] External Gate Resistance : RG [Ω]

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TSZ22111・15・001 11/12 31.Jul.2019 - Rev.001
SCT3060AR Datasheet

lMeasurement circuits and waveforms

Fig.1-1 Gate Charge Measurement Circuit

Fig.2-1 Switching Characteristics Measurement Circuit Fig.2-2 Waveforms for Switching Time

Fig.2-3 Waveforms for Switching Energy Loss

Eon = ID ∙ VDS dt Eoff = ID ∙ VDS dt

Irr Vsurge
VDS

ID

Fig.3-1 Reverse Recovery Time Measurement Circuit Fig.3-2 Reverse Recovery Waveform

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 Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

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equipment, medical systems, and power transmission systems.

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equipment, nuclear power control systems, and submarine repeaters.

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the recommended usage conditions and specifications contained herein.

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shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,
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