Ain Shams University ICs Technology

Faculty of Engineering ECE-482

Electronics & Communications 4th Year
Engineering Dept. (ECE) Fall 2021

Sheet 2: Lithography

I. State whether the following statements are true or false, give reasons and use
neat sketches wherever possible.

a) Photo lithography can be done in clean rooms lightened by red or yellow light.
b) A negative resist polymerizes under UV light whereas a positive resist depolymerizes
under UV light.
c) Positive photoresist is used to yield better process control in small geometry.
d) To get smaller feature size, i.e. higher resolution, we need longer light wavelengths.
e) In EB lithography, increasing energy increases resolution.

II. Complete the following statements.

a) . . . and . . . are two RET techniques to increase the yield dramatically.

b) Dimensions drawn on the wafer are different than those on the mask due to . . .
c) A . . . is a light sensitive material used in ICs fabrication.
d) . . . is a drying step used to improve adhesion and remove solvent from the photoresist.
e) . . . light is used in the photolithography process.
f) . . . is a drying process to remove resist by burning it in oxygenated environment.
g) . . . printing is used in research and prototyping to achieve high resolution.
h) LELE and DPL are both methods for . . . .

III. Make the following comparisons, arrange your answers in a table.

a) Positive and negative photoresist concerning the exposing to light and process control.
b) Contact, proximity and projection printing concerning resolution, mask lifetime, mask
size, cost and throughput.
c) Photo, EB and x-ray lithography, concerning resolution, mask required, cost, range of
wave-lengths, throughput and applications.

IV. State three Resolution Enhancement Techniques (RET). Explain each one of
them using neat drawings. Compare between the three techniques regarding
cost, complexity and expected yield.

1
 V. Optical Proximity Correction (OPC) consists of some standard fixes including
outside corner (dog-ears), inside corner (cut-outs) and long line
embellishments. Apply the standard to the mask, both shown in figure 1.

Figure 1 To the left, Optical Proximity Correction (OPC) standard fixes. To the right, a
Sample mask to be fixed by the proposed standards.

Best Wishes
Prof. Hani Fikry