TIP42/42A/42B/42C ®

TIP42/TIP42A/TIP42B/TIP42C Pb
Pb Free Plating Product
PNP Silicon Epitaxial Power Transistor

9.90±0.20 0.
20 4.50±0.20
60
±

Features: φ 3. 1.30±0.20
* Medium Power Linear Switching Applications
* Complement to TIP41/TIP41A/TIP41B/TIP41C

6.50±0.20
15.70±0.20

2.80±0.20

9.19±0.20
COLLECTOR
2

BASE 2.40±0.20
1 1.27±0.20
13.08±0.20

3.02±0.20
1.52±0.20

3
EMITTER
3
1. BASE 12 0.80±0.20
2. COLLECTOR 2.54typ
3. EMITTER TO-220C 2.54typ 0.50±0.20
Package Dimension Dimensions in Millimeters

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Parameter Symbol TIP42 TIP42A TIP42B TIP42C Units

Collector-Base Voltage VCBO -40 -60 -80 -100 V
Collector-Emitter Voltage VCEO -40 -60 -80 -100 V
Emitter-Base Voltage VEBO -5 V
Collector Current -Continuous IC -6 A
Collector Power Dissipation PC 2 W
Junction Temperature TJ 150 ℃
Storage Temperature Range Tstg -55to+150 ℃

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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/

 TIP42/42A/42B/42C ®

ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified)

Parameter Symbol Test conditions MI N MAX UNIT

Collector-base breakdown voltage TIP42 -40

TIP42A -60
V(BR)CBO IC= -1mA, IE=0 V
TIP42B -80
TIP42C -100

Collector-emitter breakdown voltage TIP42 -40

TIP42A -60
V(BR)CEO* IC= -30mA, IB=0 V
TIP42B -80
TIP42C -100
Emitter-base breakdown voltage V(BR)EBO IE= -1mA, IC=0 -5 V
Collector cut-off current TIP42 VCB=-40V, IE=0
TIP42A VCB=-60V, IE=0
ICBO -0.4 mA
TIP42B VCB=-80V, IE=0
TIP42C VCB=-100V, IE=0
Collector cut-off current TIP42/42A VCE= -30V, IB= 0
ICEO -0.7 mA
TIP42B/42C VCE= -60V, IB= 0
Emitter cut-off current IEBO VEB=-5V, IC=0 -1 mA
hFE(1) VCE=-4V, IC=-0.3A 30
DC current gain
hFE(2) VCE=-4 V, IC= -3A 15 75
Collector-emitter saturation voltage VCE(sat) IC=-6A, IB=-0.6A -1.5 V
Base-emitter voltage VBE VCE=-4V, IC=-6A -2 V
Transition frequency fT VCE=-10V,IC=-0.5 3 MHZ
*
Pulse test

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© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/