Pharos university in Alexandria Electrical Department

Faculty of Engineering 2019-2020

Introduction to Electronic Circuits Google Classroom
(EE 213) / Second Year “Aided Questions”
Examiners: Asst. Prof. Samy Darwish
Date: 5-4-2020
and Committee

Number of Pages: 3 Neat answers are appreciated

Choose the correct answer:

1. A device in dc power supply; that not causes damage of the electrical system:
(a) Rectifier.
(b) Filter.
(c) Voltage regulator.
(d) AC transformer.

2. A zener diode:
(a) Has a high forward voltage rating.
(b) Has a sharp breakdown at low reverse voltage.
(c) Is useful as an amplifier.
(d) Has a negative resistance.

3. One of the following is a passive element:

(a) A BJT. (b) An Inductor. (c) A FET. (d) An Op-amp.

4. Diffusion current result from:

(a) Flow of electrons.
(b) the equality of electrons and holes
(c) A non-uniform concentration.
(d) Influence of an electric field.

Tic the true and correct the false:

a) A semiconductor material is one which, in its pure state and at normal room
temperature, is a good conductor but not good insulator.

b) In a crystal, diffusion current result from a non-uniform concentration, while

absence of an electric field cause drift current.

c) Silicon is a group 4 element while Indium is a group of three elements.

d) Typically, the ac resistance of a diode in the active region will range from about 1
Ω to 10 Ω.
In graphical form illustrate:
 a. The characteristic curve for a real p–n junction.

b. Energy diagrams foe insulator and semiconductor materials.

c. Energy-band diagrams of n-type and p-type extrinsic semiconductors.

d. Basic DC power supply block diagram and waveforms.

Write the equations that can be used to describe:

a. Voltage regulation.

b. Static and dynamic resistance for Zener diode.

c. Volume and linear charge density for no-uniform distribution.

d. Semiconductor Diffusion-Current.
For the Zener diode network, determine VL, VR, IZ, and PZ.

In a semiconductor at room temperature (300 K), the intrinsic carrier concentration and
resistivity are 1.5*1016 /m3 and 2*103Ωm respectively. It is converted to an extrinsic
semiconductor with doping concentration of 1020/m3. For the extrinsic material,
calculate:
a) The resistivity.
b) The minority carrier concentration.
c) Minority carrier concentration when temperature is increased to a value at which
the intrinsic concentration be doubled.
Fill in space:

1. The number of (……..) in the nucleus specifies the atomic number of that atom.
2. The threshold voltage is about (……..) V for silicon diodes and (……..) V for
germanium diodes.
3. The maximum power dissipation level of a diode is equal to the product of the
diode (……..) and (……..).
4. Light emitting diodes (LEDs) emit light under forward-bias conditions about
(……..) V to (……..) V for good emission.
 5. A bonding of atoms, strengthened by the sharing of electrons between
neighboring atoms, is called (……..) bonding.
6. An n -type material is formed by adding donor atoms that have (……..) valence
free electrons.
7. In an n -type material, the (……..) is the majority carrier and the (……..) is the
minority carrier.
8. The reverse saturation current Is will just about (……..) in magnitude for every
10-fold increase in temperature.
9. The acronym “BJTs” mean (……..).
10. Two basic categories of voltage regulation are: (……..and…….)
What you know about?
a. Permittivity.
b. Epitaxi.
c. Full-Wave Bridge Rectifiers.
d. Types of diodes and their uses and symbol’s

Best wishes Notes: Write any equations required for illustrations