ES -104

Introduction to Analog and Digital Electronics

Summer Term - 2022

Lecture-11 (May 25, 2022)

 Recap
n-type MOSFET (NMOS)

p-type MOSFET (PMOS)

Input/output resistances

Ri 0
 VCCS vs Large signal model of MOSFET
Goal: To build a voltage controlled current Progress that we have made to reach our goal
source using MOSFET
Saturation

Large-signal model

In saturation region, MOSFET behaves like a current source.

 Using MOSFET as an amplifier
Q. Can I directly apply a small sinusoid to MOSFET input and expect an amplification?
= 1.8 V

V0 = VDD -
IDs RD Vth=0.4 V
=5K
Vi=Vpsin t Vp=1 mV
VDD
?1¥:f
=

Time •

lmk Ui < lmv

%g
-

Vi < Um
IDS
→
cutoff -

0
-_
 Finding desired region of operation

kn-Mnlo-ywgknt-llnlox-voncul.tt
Q. How do I find out the desired region of operation? = 1.8 V
Vth=0.4 V
A. Using large-signal analysis (i.e. by calculating the transfer characteristics)
=5K
Goal: Plot Vo vs Vi (VGS) by varying Vi from 0 to VDD "

' '
Tranfw characteristic

Fi;↑☒.?! @
I ( Vo -
Ui )
→ " °

↓ Nodus Ut a) Vito cutoff

,m•¥¥É¥¥¥i
in§
→
- .

% -

_Éʳʰ
-

i
- -
↳ =

b) No > Van
NDD

, UDSA
( Till Vth

-_
)
VDD > HIM
→ saturation
t.tt -
switch
'
Amplifier wth
→

switch -
Uo -
Woo -

IDRN-VDD-kzh-UI.WS
 Large signal Analysis
Goal: Plot Vo vs Vi (VGS) by varying Vi from 0 to VDD = 1.8 V
Vth=0.4 V
Calculate Vo for four cases and identify the region of operation: =5K

(i) Vi=0

(ii) Vi=Vth

(iii) Vi=
% > Vas max
V0 = VDD -
IDRD

UE]
,

(iv) Vi=VDD
ID -_ knflvas-v.tn) % -
 An example

For M1 to be in saturation:

- I n
,

In saturation:

for transistor to conduct

 Large signal Analysis
Goal: Plot Vo vs Vi (VGS) by varying Vi from 0 to VDD = 1.8 V
Vth=0.4 V
Calculate Vo for four cases and identify the region of operation: =5K

(i) Vi=0

(ii) Vi=Vth

(iii) Vi=

(iv) Vi=VDD

We could plot it using python

 Voltage transfer characteristic (VTC) curve
Transfer characteristics of a practical amplifier

Va#as<VasB_
VGSB: Maximum allowable gate voltage for the MOSFET to
remain in saturation
Voltage transfer characteristic (VTC) curve
% Ogs = 1.8 V

ra#→→
←
Vth=0.4 V
=5K

Vasa < Vas < Vaso Vas# ⇐

Oz gs
Q. What would be our strategy to amplify signals using this
MOSFET circuit?

① DC
biasing is
provided ( largesignal
.

analysis
② Superimpose the small
-
signal to
DC bias .
 Obtaining amplification: select a dc bias point
1. Select the bias point or quiescent point (Q) such that the MOSFET is in saturation
-

DJing point = 1.8 V

Vth=0.4 V

0¥
=5K
'

I
-

i t
I 1
-

¥
Obtaining amplification: superimpose the small-signal
-

2. Superimpose the small-signal over the DC bias = 1.8 V

dd%→ ᵈd¥ Dvds Au ? legs

Vth=0.4 V
Au
-

= = =

=5K
,

%
°
\
Au → -

phase
ve

change of 180° [
In the output signal

⑤
 Small-signal analysis
Q. How do we analyse this circuit in the presence of a small-signal?
= 1.8 V
Vth=0.4 V Go = VDD -
IDRD
=5K

its =
G- (Was -10g -

Ven )2

↳ =
VDD -

MR ( ( Vas -

Ump -120g Was -

Ven)
+ %)
VOD
knR→( Vas -4nF
kn¥s( ]
=
"
-

=
VDD IDRD
-
-

kh¥D(2Ugs( Vas -

)t④)
ka
L
distortion
 Uo VDD Is Ros
knR→ (2-6-41) + Ug
= -
-

For linear
amputation ! -

/Ñ%¥ʳTe↑R,ugsWas-k
Ugk << 2
Vgs was -

Vm) Do =
KEE -

knRD%(Vas -

☒
Ags << 2 ( Vas Vtn )
-
-
Vo -

An RD Ugs ( Vas Vse)

-

Y 76
,m ,

k# .
→ 9m Gramsconductance
Gm -

ᵈ*%g±knUasn) Do = -9m Ris Qgs

ID =

kg ( ks -
Ven)2 µgs=-9mRo=A#-
%ff-u-%ae-9mq-fq.pro 1K¥
É¥€§T%=%+% s•→¥÷
,

tf %=-GmUgsR,

gmllqlrollRDGUik-T-i-M.IE,µo=-%mUgdroHR☐
#--E::
Do = -

Is
- ideal ,ro→D
 Small-signal model
= 1.8 V
Vth=0.4 V
=5K

Is
Steps for analysing MOSFET amplifier circuits:

1) DC analysis first (Calculating the bias point)

2) Small-signal analysis using the small-signal model
Tutorial 2 : Question 10