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Prof - Motegaonkar S.R. M.SC - Chem.Gold Medalist SET/NET-JRF, GATE, DRDO, TIFR Qualified
Prof - Motegaonkar S.R. M.SC - Chem.Gold Medalist SET/NET-JRF, GATE, DRDO, TIFR Qualified
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Title
Semiconductor
02 Lakshya Numericals 8 - 12
LAKSHYA NUMERICALS
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1. A semiconductor is known to have an a) 8.8 mA b) 1 mA
electron concentration 6 × 1013 per cm3 and c) 2 mA d) 9.9 mA
hole concentration 4 × 10 11 per cm 3 . The
7. Current through the ideal diode as shown in
semiconductor is
figure is
a) n-type b) p-type
c) intrinsic d) none of the above
2. A Ge specimen is doped with Al. The
concentration of acceptor atoms is
10 21 atom/m 3 . Given that the intrinsic
concentration of electron-hole pairs is
1019/m3, the concentration of electrons in a) zero b) 20 A
the specimen is c) (1/20) A d) (1/50) A
a) 1017 / m3 b) 1015 / m3
8. The current I through 10 Ω resistor in the
c) 104 / m3 d) 102 / m3
circuit shown in figure is
3. A potential barrier of 0.3 V exists across a p-
n junction. If the depletion region is 1.5 µm
wide, the intensity of electric field in this
region is
a) 5 × 10–6 Vm–1 b) 2 × 105 Vm–1
c) 2 × 106 Vm–1 d) 4.5 × 10–7 Vm–1
4. A p-n photodiode is made of a material with
a band gap of 2.0 eV. The minimum frequency a) 50 mA b) 20 mA c) 80 mA d) 0 mA
of the radiation that can be absorbed by the 9. Two ideal diodes are connected to a battery
material is nearly as shown in the circuit. The current supplied
a) 1 × 1014 Hz b) 20 × 1014 Hz by the battery is
c) 10 × 1014 Hz d) 5 × 1014 Hz
5. In which of the following figure, the junction
diode is reverse biased?
a) b)
a) 0.75 A b) zero
c) d) c) 0.25 A d) 0.5 A
10. On increasing the reverse voltage in a p-n
junction diode the value of reverse current
6. A p-n junction in series with a resistance of will
5 k is connected across a 50 V d.c. source. If a) gradually increase
b) suddenly increase
the forward bias resistance is 50 Ω , the
c) remain constant
forward bias current is d) gradually decrease
11. The value of current in the following diagram
will be
a) 0 amp b) 0.01 amp
c) 10 amp d) 0.025 amp
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frequency in the ripple will be 1
a) 50 Hz b) 70.7 Hz c) d)
1
c) 100 Hz d) 25 Hz 19. The current gain for transistor working as
13. A full wave rectifier circuit along with the common-base amplifier is 0.96 if the collector
output is shown in the given diagram figure. current is 7.2 mA, then the base current is
The contributions (s) from the diode (1) is / a) 0.30 mA b) 0.35 mA
are c) 0.39 mA d) 0.43 mA
20. In a common base transistor amplifier, the ac
current gain ( ) is given by
a) ( I c / I b )Vc is constant
b) ( I c / I e )Vc is constant
c) ( I b / I c )Vc is constant
a) C b) A, C d) ( I e / I c )Vc is constant
c) B, D d) A, B, C, D 21. In a transistor, the emitter-base junction and
the collector-base junction are
14. The output current verses time curve of a
rectifier is shown in the figure. The average a) forward and forward biased respectively
valve of the output current in this case is b) reverse and reverse biased respectively
c) reverse and forward biased respectively
d) forward and reverse biased respectively
22. For a common emitter amplifier, the audio
signal voltage across the collector resistance
of 2 k is 2 V. Suppose the current amplification
a) 0 b) I 0 / c) 2 I 0 / d) I 0 factor of the transistor is 100. If the base
resistance is 1 k , the base current is
15. A zener diode, having breakdown voltage
equal to 15 V, is used in a voltage regulator a) 5 µA b) 7 µA c) 10 µA d) 14 µA
circuit shown in figure. the current through 23. A transistor connected as common emitter
the diode is mode contains load resistance of 5 k and an
input resistance of 1 k . If the input peak
voltage is 5 mV and the current gain is 50,
find the voltage gain
a) 250 b) 500
c) 125 d) 50
a) 10 mA b) 15 mA c) 20 mA d) 5 mA
24. In common base mode of transistor, the
16. For a given transistor the value of is 99. collector current is 5.488 mA for an emitter
Then what is the corresponding value of . current of 5.60 mA. The value of the base
a) 0.97 b) 1.97 c) 1.99 d) 0.99 current amplification factor ( ) will be
17. In common-emitter transistor amplifier, the a) 48 b) 49 c) 50 d) 51
phase difference between output voltage and
25. The input resistance of a CE amplifier is 333
input is
a) zero b) 45° and the load resistance is 5 k . A change of
c) 90° d) 180° base current by 15 µA result in the change of
18. The correct relationship between the two collector current by 1 mA. The voltage gain
current gains and in a transistor is of the amplifier is
a) 550 b) 51 c) 101 d) 1001
Prof.Motegaonkar S.R. M.Sc.Chem.Gold Medalist SET/NET-JRF,GATE, DRDO,TIFR qualified Page: 9
Semiconductor
26. The current gain of a transistor in a common 31. What is the value of A A in the Boolean
emitter configuration is 40. If the emitter algebra?
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current is 8.2 mA, then base current is
a) 0 b) 1 c) A d) A
a) 0.02 mA b) 0.2 mA
32. Given below are four logic gate symbols.
c) 2.0 mA d) 0.4 mA
Those for OR NOR and NAND are
27. In a common emitter transistor amplifier = 60,
respectively
R0 5000 and internal resistance of a
transistor is 500 Ω . The voltage amplification of
amplifier will be
a) 500 b) 460 c) 600 d) 560
28. In the circuit shown in figure, when the
input voltage of the base resistance is 10 V,
VBE is zero and VCE is also zero. The values of
a) 1, 4, 3 b) 4, 1, 2
IB and IC are
c) 1, 3, 4 d) 4, 2, 1
33. Which of the following gates will behave an
output of 0?
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40. In the circuit figure, the output y for all
possible inputs A and B is expressed by the
truth table
a) b)
a) b)
c) d)
c) d)
41. What is the Boolean expression for the gate
circuit shown in figure?
a) A.0 0 b) A.A 0
c) A.1 A d) A. A A
42. The real time variation of input signals A and
B are as shown ahead. If the inputs are fed
into NAND gate, then select the output signal
a) NOT b) AND from the following
c) OR d) NAND
38. Output Y is given by
a) ( X Y )Z b) ( X Y )Z a) b)
c) X Y Z d) ( X Y ) Z
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The voltage waveforms of A, B and Y are as in silicon than in germanium.
given Reason : Thermal energy produces fewer
minority carriers in silicon than in
germanium.
a) A b) B
c) C d) D
47. Assertion : In a common base circuit, current
gain is 0.95. If base current is 60 A, show
that emitter current is 1200 A.
Reason : a = Ic/Ie
a) A b) B
c) C d) D
48. Assertion : Transistor amplifier increases
power but step up transformer can not
The logic gate is increaese power :
a) NOR gate b) OR gate Reason : In transistor amplifier. Power gain
c) AND gate d) NAND gate is the product of voltage gain and current
44. In the Boolean algebra which of the following gain but in step up transformer, only voltage
is not equal to A? increase and corresponding current
a) A A b) A A c) A A
d) A A decreases.
a) A b) B c) C d) D
Assertion Reason Type Question
49. Assertion : A transistor amplifier in common
Direction
emitter amplifier has a low input impedance.
A) Both, Assertion and Reason are true and
Reason : The base to emitter region is forward
the Reason is correct explanation of the
biased
Assertion.
a) A b) B c) C d) D
B) Both, Assertion and Reason are ture, but
50. Assertion : If current gain in a common base
Reason is not correct explanation of the
mode of a transistor is 0.96, then current gain
Assertion.
in common emitter mode will be 24.
C) Assertion is ture, but the Reason is false.
Reason : Current gain = output current/input
D) Both, Assertion and Reason are false.
current.
45. Assertion : The ratio of free electrons to holes
a) A b) B
in intrinsic semiconductor is greater than
c) C d) D
one.
51. Assertion : If A = 1 and B = 0 then A. A + B =
Reason : The electrons are lighter particles
1.
and holes are heavy particles.
Reason : A. A = A and 1 + 0 = 1
a) A b) B
a) A b) B
c) C d) D
c) C d) D
1 (a) 2 (a) 3 (b) 4 (d) 5 (b) 6 (d) 7 (a) 8 (c) 9 (d) 10 (b)
11 (b) 12 (c) 13 (b) 14 (d) 15 (d) 16 (d) 17 (d) 18 (c) 19 (a) 20 (b)
21 (d) 22 (c) 23 (a) 24 (b) 25 (d) 26 (b) 27 (c) 28 (b) 29 (c) 30 (b)
31 (b) 32 (c) 33 (b) 34 (d) 35 (b) 36 (b) 37 (b) 38 (d) 39 (d) 40 (d)
41 (b) 42 (b) 43 (d) 44 (c) 45 (d) 46 (a) 47 (b) 48 (a) 49 (b) 50 (b)
51 (a)