AP2761I-A

RoHS-compliant Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ 100% Avalanche Test BVDSS 650V

D
▼ Fast Switching Characteristic RDS(ON) 1Ω
▼ Simple Drive Requirement ID 10A
G
S
Description

AP2761 series are specially designed as main switching devices for universal
90~265VAC off-line AC/DC converter applications.

TO-220CFM type provide high blocking voltage to overcome voltage surge

and sag in the toughest power system with the best combination of fast G
switching,ruggedized design and cost-effectiveness. D
S TO-220CFM(I)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage ±30 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 10 A
ID@TC=100℃ Continuous Drain Current, V GS @ 10V 6.4 A
1
IDM Pulsed Drain Current 36 A
PD@TC=25℃ Total Power Dissipation 37 W
Linear Derating Factor 0.3 W/℃
EAS Single Pulse Avalanche Energy2 65 mJ
IAR Avalanche Current 10 A
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 3.4 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 65 ℃/W

Data & specifications subject to change without notice 200202074-1/4

AP2761I-A
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 650 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5A - - 1 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=5A - 4.8 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=600V, VGS=0V - - 10 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
3
Qg Total Gate Charge ID=10A - 53 - nC
Qgs Gate-Source Charge VDS=520V - 10 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 15 - nC
3
td(on) Turn-on Delay Time VDD=320V - 16 - ns
tr Rise Time ID=10A - 20 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 82 - ns
tf Fall Time RD=32Ω - 36 - ns
Ciss Input Capacitance VGS=0V - 2770 - pF
Coss Output Capacitance VDS=15V - 320 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 8 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
3
VSD Forward On Voltage IS=10A, VGS=0V - - 1.5 V
trr Reverse Recovery Time IS=10A, VGS=0V, - 610 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 8.64 - µC

Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse test

THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.

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 AP2761I-A

14 8

12
o 10V T C =150 o C 10V
T C =25 C 5.0V
6.0V 6
10
ID , Drain Current (A)

ID , Drain Current (A)

8
4.5V
4

5.0V
4
2 V G =4.0V

2 V G =4.0V

0 0
0 5 10 15 20 25 0 5 10 15 20 25

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.2 3

I D =5A
V G =10V
Normalized BVDSS (V)

1.1

2
Normalized RDS(ON)

0.9

0.8 0
-50 0 50 100 150 -50 0 50 100 150

T j , Junction Temperature ( C) o
T j , Junction Temperature ( o C )

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature
100 5

10 4

T j = 150 o C T j = 25 o C
IS (A)

VGS(th) (V)

1 3

0.1
2

0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1
-50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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AP2761I-A

16 10000
f=1.0MHz

I D =10A
VGS , Gate to Source Voltage (V)

C iss
12 V DS =330V
V DS =410V
V DS =520V C oss

C (pF)
8 100

C rss
0 1
0 20 40 60 80 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Normalized Thermal Response (Rthjc)

10 0.2

10us 0.1
ID (A)

0.1

100us 0.05

0.02 PDM
1
1ms t

0.01 T

T c =25 o C 10ms
Single Pulse Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
100ms
0.1 0.01
1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 10

V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V
QGS QGD

10%
VGS

td(on) tr td(off) t Charge Q

f

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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