PD- 91577B

IRG4PH40KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT
C
Features
• High short circuit rating optimized for motor control, VCES = 1200V
tsc =10µs, VCC = 720V , TJ = 125°C,
VGE = 15V
VCE(on) typ. = 2.74V
• Combines low conduction losses with high G
switching speed
• Tighter parameter distribution and higher efficiency @VGE = 15V, IC = 15A
E
than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, n-ch an nel
ultrasoft recovery antiparallel diodes
Benefits
• Latest generation 4 IGBT's offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGPH40KD2 and IRGPH40MD2
products
• For hints see design tip 97003 TO-247AC
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 30
IC @ TC = 100°C Continuous Collector Current 15
ICM Pulsed Collector Current Q 60 A
ILM Clamped Inductive Load Current R 60
IF @ TC = 100°C Diode Continuous Forward Current 8.0
IFM Diode Maximum Forward Current 130
tsc Short Circuit Withstand Time 10 µs
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 160
W
PD @ TC = 100°C Maximum Power Dissipation 65
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 10 lbf•in (1.1 N•m)

Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.77
RθJC Junction-to-Case - Diode ––– ––– 1.7 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
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IRG4PH40KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown VoltageS 1200 — — V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.37 — V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage — 2.74 3.4 IC = 15A VGE = 15V
— 3.29 — V IC = 30A See Fig. 2, 5
— 2.53 — IC = 15A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -3.3 — mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance T 8.0 12 — S VCE = 100V, IC = 15A
ICES Zero Gate Voltage Collector Current — — 250 µA VGE = 0V, VCE = 1200V
— — 3000 VGE = 0V, VCE = 1200V, TJ = 150°C
VFM Diode Forward Voltage Drop — 2.6 3.3 V IC = 8.0A See Fig. 13
— 2.4 3.1 IC = 8.0A, TJ = 125°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 94 140 IC = 15A
Qge Gate - Emitter Charge (turn-on) — 14 22 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) — 37 55 VGE = 15V
td(on) Turn-On Delay Time — 50 —
tr Rise Time — 31 — TJ = 25°C
ns
td(off) Turn-Off Delay Time — 96 140 IC = 15A, VCC = 800V
tf Fall Time — 220 330 VGE = 15V, RG = 10Ω
Eon Turn-On Switching Loss — 1.31 — Energy losses include "tail"
Eoff Turn-Off Switching Loss — 1.12 — mJ and diode reverse recovery
Ets Total Switching Loss — 2.43 2.8 See Fig. 9,10,18
tsc Short Circuit Withstand Time 10 — — µs VCC = 720V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
td(on) Turn-On Delay Time — 49 — TJ = 150°C, See Fig. 10,11,18
tr Rise Time — 33 — IC = 15A, VCC = 800V
ns
td(off) Turn-Off Delay Time — 290 — VGE = 15V, RG = 10Ω,
tf Fall Time — 440 — Energy losses include "tail"
Ets Total Switching Loss — 5.1 — mJ and diode reverse recovery
LE Internal Emitter Inductance — 13 — nH Measured 5mm from package
Cies Input Capacitance — 1600 — VGE = 0V
Coes Output Capacitance — 77 — pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance — 26 — ƒ = 1.0MHz
trr Diode Reverse Recovery Time — 63 95 ns TJ = 25°C See Fig.
— 106 160 TJ = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current — 4.5 8.0 A TJ = 25°C See Fig.
— 6.2 11 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge — 140 380 nC TJ = 25°C See Fig.
— 335 880 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery — 133 — A/µs TJ = 25°C See Fig.
During tb — 85 — TJ = 125°C 17

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 IRG4PH40KD
25
For both:
D uty cy cle: 50%
TJ = 125°C
20
T s ink = 90°C
G ate drive as specified
LOAD CURRENT (A)

P ow e r Dis sip ation = 35 W

15
S q u a re w a v e :
6 0% of rate d
volta ge
10
I

5 Id e a l d io d e s

0
0.1 1 10 100
f, Frequency (KHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)


TJ = 150 °C 
TJ = 150 °C
10 10


TJ = 25 °C

TJ = 25 ° C

1

V GE = 15V
20µs PULSE WIDTH
1

V = 50V
CC
5µs PULSE WIDTH
1 10 4 6 8 10 12 14
VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

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IRG4PH40KD


30 4.0
V GE = 15V
80 us PULSE WIDTH

VCE , Collector-to-Emitter Voltage(V)

Maximum DC Collector Current(A)

25

3.5 
I C = 30 A
20

15 3.0


I C = 15 A
10

2.5
5

I C = 7.5 A

0 2.0
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160
TC , Case Temperature ( °C) TJ , Junction Temperature ( ° C)

Fig. 4 - Maximum Collector Current vs. Case Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature vs. Junction Temperature

1
Thermal Response (Z thJC )

D = 0.50

0.20


0.1 0.10

P DM
0.05
t1
0.02
 SINGLE PULSE t2


0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRG4PH40KD


2500


20
VGE = 0V, f = 1MHz VCC = 400V
Cies = Cge + Cgc , Cce SHORTED
I C = 15A
Cres = Cgc

VGE , Gate-to-Emitter Voltage (V)

2000 Coes = Cce + Cgc 16
C, Capacitance (pF)


Cies
1500 12

1000 8

500 4

Coes

Cres
0 0
1 10 100 0 20 40 60 80 100
VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC)

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

 
3.0 100
800V
V CC = 480V RG = 10 Ω
Ohm
V GE = 15V VGE = 15V
TJ = 25 °C 800V
VCC = 480V
2.8 I C = 15A
Total Switching Losses (mJ)
Total Switching Losses (mJ)


IC = 30 A
10
2.6 
IC = 15 A


IC = 7.5 A

2.4
1

2.2

2.0 0.1
0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160
RGRG , GateResistance
, Gate (Ω)
Resistance(Ohm) TJ , Junction Temperature ( ° C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature

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IRG4PH40KD


14 100
RG = 10
OhmΩ VGE = 20V
TJ = 150 ° C T J = 125 oC

I C , Collector-to-Emitter Current (A)

12 VCC 800V
= 480V
VGE = 15V
Total Switching Losses (mJ)

10

8
10
6

SAFE OPERATING AREA

0 1
0 5 10 15 20 25 30 1 10 100 1000 10000
I C , Collector-to-emitter Current (A) VCE , Collector-to-Emitter Voltage (V)

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
Insta ntaneo us F orw ard Cu rrent - I F (A )

10

TJ = 15 0°C

TJ = 12 5°C

TJ = 2 5°C

1
0 2 4 6 8 10
Fo rwa rd V oltage D rop - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

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 IRG4PH40KD
200 100

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
160

I F = 16A
I F = 1 6A

I IR R M - (A )
120
t rr - (ns)

I F = 8 .0 A
I F = 8.0A
10
I F = 4 .0A
I F = 4 .0 A
80

40

0 1
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

600 1000
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
500

I F = 4 .0A
d i(re c)M /d t - (A /µs)

400
I F = 16 A I F = 8.0 A
Q R R - (nC )

I F = 1 6A
300 100
I F = 8 .0A

200
I F = 4 .0A

100 VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C

0 10
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt

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IRG4PH40KD

90% Vge

Same ty pe +Vge
device as
D .U.T.

Vce

430µF 9 0 % Ic
80% 10% Vce
of Vce Ic Ic
D .U .T.
5 % Ic

td (o ff) tf

t1 + 5 µ S

Fig. 18a - Test Circuit for Measurement of

Eoff =
∫ Vce Ic dt
V c e ic d t
t1

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

t1 t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

trr
G A T E V O L T A G E D .U .T .
Ic
trr
Q rr =
∫ Ic dt
tx
id d t

1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2
E o n = VVce
ce ieIcd t dt t4
t1

D IO D E R E V E R S E
E re c =
∫ Vd Ic dt
V d id d t
t3
t1 t2
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

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 IRG4PH40KD

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 800V
RL=
4 X IC @25°C
1000V Vc*
0 - 800V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

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IRG4PH40KD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.

Case Outline — TO-247AC

NOTE S:
3 .6 5 (.1 4 3 ) -D-
5 .3 0 (.2 0 9 ) 1 D IM E N S IO N S & T O LE R A N C IN G
1 5 .9 0 (.6 2 6 ) 3 .5 5 (.1 4 0 ) P E R A N S I Y 14 .5M , 1 98 2 .
1 5 .3 0 (.6 0 2 ) 4 .7 0 (.1 8 5 )
0 .2 5 ( .0 1 0 ) M D B M 2 C O N T R O L L IN G D IM E N S IO N : IN C H .
-B- -A- 2.5 0 ( .0 8 9)
3 D IM E N S IO N S A R E S H O W N
1.5 0 ( .0 5 9) M IL LIM E T E R S (IN C H E S ).
5 .5 0 (.2 17 ) 4 4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7A C .
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 ) 5.5 0 (.2 1 7)
2X
4.5 0 (.1 7 7) LEAD A S S IG N M E N T S
1- GAT E
1 2 3 2- COLLECTO R
3- E M IT T E R
4- COLLECTO R
-C-
1 4 .8 0 (.5 8 3 ) 4 .3 0 (.1 7 0 )
* 1 4 .2 0 (.5 5 9 ) 3 .7 0 (.1 4 5 ) * LO N G E R LE A D E D (2 0m m )
V E R S IO N A V A IL A B L E (T O -2 47 A D )
T O O R D E R A D D "-E " S U F F IX
TO PAR T NUM BER
2 .4 0 (.0 9 4 ) 1 .4 0 ( .0 56 ) 0 .8 0 (.0 3 1 )
2 .0 0 (.0 7 9 ) 3X 3X
1 .0 0 ( .0 39 ) 0 .4 0 (.0 1 6 )
2X
0.2 5 (.0 1 0 ) M C A S 2 .6 0 ( .1 0 2 )
5 .4 5 (.2 1 5 ) 2 .2 0 ( .0 8 7 )
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)

D im e n s io n s in M illim e te rs a n d (In c h e s )

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Data and specifications subject to change without notice. 6/00

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