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Edcp - 4
Edcp - 4
BJT Structure
The BJT has three regions called the emitter, base, and
collector. Between the regions are junctions as indicated.
collector regions.
E (emitter) E
npn pnp
npn
pnp
I B4
βDC is the ratio of collector
I B3
current to base current.
I
I B2
β DC = C
IB
I B1
IB = 0
It can be read from the curves.
Cutoff region
VCE
0
The value of βDC is nearly the
same wherever it is read.
IB6 = 60 µA
10.0
IB5 = 50 µA
8.0
IB4 = 40 µA
6.0
I B3 = 30 µA
4.0 IB2 = 20 µA
IB1 = 10 µA
2.0
IB = 0
0 VCE
IB6 = 60 µA
10.0
Choose a base current near the IB5 = 50 µA
center of the range – in this 8.0
IB4 = 40 µA
case IB3 which is 30 µA.
6.0
I B3 = 30 µA
Read the corresponding
collector current – in this case, 4.0 IB2 = 20 µA
RC 3.3 kΩ
3.0 V − 0.7 V
Is the transistor saturated?
= I B = 10.45 µ A
220 kΩ
IC = β IB = 200 (10.45 µA) = 2.09 mA Since IC < ISAT, it is not saturated.
ON Characteristics
DC current g ain hFE –
( IC = 0.1 mA dc, VCE = 1.0 V dc) 2N3903 20 –
2N3904 40 –
( IC = 1.0 mA dc, VCE = 1.0 V dc) 2N3903 35 –
2N3904 70 –
( IC = 10 mA dc, VCE = 1.0 V dc) 2N3903 50 150
2N3904 100 300
( IC = 50 mA dc, VCE = 1.0 V dc) 2N3903 30 –
2N3904 60 –
( IC = 100 mA dc, VCE = 1.0 V dc) 2N3903 15 –
2N3904 30 –
The text uses capital letters for both AC and DC currents and voltages
with rms values assumed unless stated otherwise.
DC Quantities use upper case roman subscripts. Example: VCE.
(The second letter in the subscript indicates the reference point.)
AC Quantities and time varying signals use lower case italic
subscripts. Example: Vce.
Internal transistor resistances are indicated as lower case
quantities with a prime and an appropriate subscript. Example: re’.
External resistances are indicated as capital R with either a
capital or lower case subscript depending on if it is a DC or ac
resistance. Examples: RC and Rc.
VBB
RB +
0 r e′ VCC
Vc –
Vc
+
Vin VBB Vb
–
VCE
RC IC = 0 RC RC IC(sat) RC IC(sat)
RB C RB C
+
0V +VBB
IB = 0 E IB E
–
n
voltage is maximum with
Collector
no light and drops with
increasing light.
Q2
With no incident light, Q1 will be
biased OFF. Q2 will be forward-biased Q1
3 Collector
3 Collector
3 3 Collector
2
Base 1
2
1 1 Base
1 Emitter Base
2 2 2 Emitter
3 1 Emitter
3 2
1
TO-92 SOT-23 TO-18
E
C
B
C (case)
B
C
E
C
E B
A basic test for a BJT is to use the Diode Test function of your DMM.
mV H
close to 0.7 V for an npn transistor.
Ω
EBC
A Range
Autorange 1s
Touch/Hold 1s
10 A
VΩ
40 m A
COM
Fused
A basic test for a BJT is to use the Diode Test function of your DMM.
mV H
close to 0.7 V for an npn transistor.
Reversing the leads will show OL
Ω
EBC
A Range
for “overload”.
Autorange 1s
Touch/Hold 1s
10 A
VΩ
Fused
base-collector junction.
RB +
VCC
c. 10 µA + 430 kΩ
βDC = 200
–
15 V
V BB
d. 11.6 µA 5V –
RB +
VCC
c. 3.79 mA + 430 kΩ
βDC = 200
–
15 V
V BB
d. 14.8 mA 5V –
a. b.
c. d.
Answers:
1. d 6. c
2. a 7. c
3. a 8. d
4. d 9. b
5. b 10. c