Transistor

2SB1398
Silicon PNP epitaxial planer type

For low-frequency output amplification

Unit: mm

1.05 2.5±0.1
6.9±0.1 ±0.05 (1.45)

0.15
0.7 4.0 0.8

■ Features

0.5
4.5±0.1
● Low collector to emitter saturation voltage VCE(sat).

0.2
● Large collector current IC.

1.0 1.0
● Allowing supply with the radial taping. 0.65 max.

14.5±0.5
■ Absolute Maximum Ratings (Ta=25˚C) 0.45–0.05
+0.1

2.5±0.5 2.5±0.5

0.45–0.05
+0.1
Parameter Symbol Ratings Unit
1 2 3

Collector to base voltage VCBO –30 V

2.5±0.1
Collector to emitter voltage VCEO –25 V
Emitter to base voltage VEBO –7 V Note: In addition to the 1:Emitter
Peak collector current ICP –8 A lead type shown in 2:Collector
the upper figure, the 3:Base
Collector current IC –5 A type as shown in MT2 Type Package
Collector power dissipation PC* 1 W the lower figure is
also available.
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board 1.2±0.1
thickness of 1.7mm for the collector portion 0.65
max.

0.45+–0.1
0.05
(HW type)

■ Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit
Collector cutoff current ICBO VCB = –10V, IE = 0 –100 nA
Emitter cutoff current IEBO VEB = –5V, IC = 0 –100 nA
Collector to emitter voltage VCEO IC = –1mA, IB = 0 –25 V
Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V
Forward current transfer ratio hFE*1 VCE = –2V, IC = –2A*2 90 205
Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = –0.1A*2 –1 V
Transition frequency fT VCB = –6V, IE = 50mA, f = 200MHz 120 MHz
Collector output capacitance Cob VCB = –20V, IE = 0, f = 1MHz 85 pF
*2 Pulse measurement

*1h Rank classification

FE

Rank P Q
hFE 90 ~ 135 120 ~ 205

1
Transistor 2SB1398

PC — Ta IC — VCE IC — VBE
1.6 –6 –10
Printed circut board: Copper Ta=25˚C VCE=–2V
foil area of 1cm2 or more, and
Collector power dissipation PC (W)

–9
1.4 IB=–50mA –45mA
the board thickness of 1.7mm –5
for the collector portion. –40mA –8

Collector current IC (A)

Collector current IC (A)

1.2 –35mA
25˚C
–7
–4 –30mA
1.0 Ta=100˚C –25˚C
–25mA –6

0.8 –3 –20mA –5

–15mA –4
0.6
–2
–10mA –3
0.4
–2
–1 –5mA
0.2
–1

0 0 0
0 20 40 60 80 100 120 140 160 0 –1 –2 –3 –4 –5 –6 0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

hFE — IC VCE(sat) — IC fT — I E
500 –100 240
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=30
VCE=–2V VCB=–6V
450 Ta=25˚C
Forward current transfer ratio hFE

–30

Transition frequency fT (MHz)

200
400
–10
350
160
300 –3

250 Ta=100˚C –1 120

Ta=100˚C

200 25˚C 25˚C

– 0.3
–25˚C 80
150 –25˚C
– 0.1
100
40
50 – 0.03

0 – 0.01 0
– 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 –10 1 3 10 30 100 300 1000
Collector current IC (A) Collector current IC (A) Emitter current IE (mA)

Cob — VCB
240
IE=0
Collector output capacitance Cob (pF)

f=1MHz
Ta=25˚C
200

160

120

80

40

0
–1 –3 –10 –30 –100
Collector to base voltage VCB (V)