2SK3541

Transistor

Small switching (30V, 0.1A)

2SK3541

!Applications !External dimensions (Units : mm)

Interfacing, switching (30V, 100mA)

1.2
0.2 0.8 0.2
!Features
1) Low on-resistance.

0.32

0.4 0.4
1.2

0.8
(2)
(3)
2) Fast switching speed. (1)

0.22
3) Low voltage drive (2.5V) makes this device ideal for

0.5
portable equipment.

0.13
0~0.1
0.15Max.
4) Easily designed drive circuits.
5) Easy to parallel.
ROHM : VMT3 (1) Gate
(2) Source
(3) Drain
!Structure Abbreviated symbol : KN

Silicon N-channel
MOSFET

!Absolute maximum ratings (Ta=25°C) !Equivalent circuit

Parameter Symbol Limits Unit Drain

Drain-source voltage VDSS 30 V

Gate-source voltage VGSS ±20 V
Continuous ID 100 mA
Drain current
Pulsed IDP∗1 400 mA Gate

Reverse drain Continuous IDR 100 mA

current Pulsed IDRP∗1 400 mA
∗ Gate
Total power dissipation (Tc=25°C) PD∗2 150 mW Protection
Diode
Source
Channel temperature Tch 150 °C
Storage temperature Tstg −55~+150 °C
∗1 Pw≤10µs, Duty cycle<1% ∗A protection diode is included between the gate
∗2 With each pin mounted on the recommended lands. and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
 2SK3541
Transistor

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Gate-source leakage IGSS − − ±1 µA VGS=±20V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 30 − − V ID=10µA, VGS=0V
Zero gate voltage drain current IDSS − − 1.0 µA VDS=30V, VGS=0V
Gate threshold voltage VGS(th) 0.8 − 1.5 V VDS=3V, ID=100µA
Static drain-source on-state RDS(on) − 5 8 Ω ID=10mA, VGS=4V
resistance RDS(on) − 7 13 Ω ID=1mA, VGS=2.5V
Forward transfer admittance |Yfs| 20 − − ms ID=10mA, VDS=3V
Input capacitance Ciss − 13 − pF VDS=5V
Output capacitance Coss − 9 − pF VGS=0V
Reverse transfer capacitance Crss − 4 − pF f=1MHz
Turn-on delay time td(on) − 15 − ns ID=10mA, VDD 5V
Rise time tr − 35 − ns VGS=5V
Turn-off delay time td(off) − 80 − ns RL=500Ω
Fall time tr − 80 − ns RGS=10Ω

!Packaging specifications
Package Taping
Code T2R
Type
Basic ordering unit
(pieces) 8000

2SK3541

!Electrical characteristic curves

0.15 200m 2
GATE THRESHOLD VOLTAGE : VGS(th) (V)

4V VDS=3V VDS=3V
3V 100m Pulsed ID=0.1mA
Ta=25°C Pulsed
Pulsed 50m
3.5V
DRAIN CURRENT : ID (A)

DRAIN CURRENT : ID (A)

1.5
20m
0.1
10m
5m 1
2.5V
2m
Ta=125°C
0.05
1m 75°C
2V 25°C 0.5
0.5m
−25°C
0.2m
VGS=1.5V
0 0.1m 0
0 1 2 3 4 5 0 1 2 3 4 −50 −25 0 25 50 75 100 125 150
DRAIN-SOURCE VOLTAGE : VDS (V) GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (°C)

Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs.
channel temperature
 2SK3541
Transistor

50 50 15
VGS=4V VGS=2.5V Ta=25°C
Pulsed Ta=125°C Pulsed Pulsed
ON-STATE RESISTANCE : RDS(on) (Ω)

ON-STATE RESISTANCE : RDS(on) (Ω)

ON-STATE RESISTANCE : RDS(on) (Ω)
Ta=125°C 75°C
20 20 25°C
75°C
−25°C
25°C
10 10 10
−25°C
STATIC DRAIN-SOURCE

STATIC DRAIN-SOURCE
STATIC DRAIN-SOURCE
5 5

2 5
2 ID=0.1A

1 1 ID=0.05A

0.5 0.5 0
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 5 10 15 20
DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V)

Fig.4 Static drain-source on-state Fig.5 Static drain-source on-state Fig.6 Static drain-source
resistance vs. drain current (Ι) resistance vs. drain current (ΙΙ) on-state resistance vs.
gate-source voltage

9 0.5 200m
VGS=4V VDS=3V VGS=0V

REVERSE DRAIN CURRENT : IDR (A)

ON-STATE RESISTANCE : RDS(on) (Ω)

8 Pulsed Pulsed 100m Pulsed

0.2
7 Ta=−25°C 50m
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)

ID=100mA 0.1 25°C

75°C 20m
6
0.05 Ta=125°C
STATIC DRAIN-SOURCE

ID=50mA 125°C 10m

5 75°C
5m 25°C
0.02
4 −25°C
0.01 2m
3
1m
0.005
2 0.5m
1 0.002 0.2m
0 0.001 0.1m
−50 −25 0 25 50 75 100 125 150 0.0001 0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 0 0.5 1 1.5
CHANNEL TEMPERATURE : Tch (°C) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.7 Static drain-source on-state Fig.8 Forward transfer Fig.9 Reverse drain current vs.
resistance vs. channel admittance vs. drain current source-drain voltage (Ι)
temperature

200m 50 1000
Ta=25°C Ta=25°C Ta=25°C
REVERSE DRAIN CURRENT : IDR (A)

tf
100m Pulsed f=1MHZ 500 VDD=5V
VGS=0V td(off) VGS=5V
50m 20 RG=10Ω
200
SWITHING TIME : t (ns)

Pulsed
CAPACITANCE : C (pF)

Ciss
20m
10 100
10m VGS=4V 0V
5m 5 50
Coss
tr
2m 20
Crss td(on)
1m 2
10
0.5m
1 5
0.2m
0.1m 0.5 2
0 0.5 1 1.5 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 100
SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (mA)

Fig.10 Reverse drain current vs. Fig.11 Typical capacitance vs. Fig.12 Switching characteristics
source-drain voltage (ΙΙ) drain-source voltage (See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
 2SK3541
Transistor

!Switching characteristics measurement circuit

Pulse width

90%
VGS 50% 50%
ID VGS
VDS 10%
D.U.T. RL
RG VDS 10% 10%
VDD
90%
90%
td (on) tr tf
td (off)
ton toff

Fig.13 Switching time measurement circuit Fig.14 Switching time waveforms

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0