AP4501GM

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RoHS-compliant Product
Advanced Power N AND P-CHANNEL ENHANCEMENT

Electronics Corp. MODE POWER MOSFET

▼ Simple Drive Requirement D2 N-CH BVDSS 30V

D2
▼ Low On-resistance D1 RDS(ON) 28mΩ
D1
▼ Fast Switching Performance ID 7A
G2

G1
S2 P-CH BVDSS -30V
S1
SO-8 RDS(ON) 50mΩ
Description ID -5.3A
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
D1 D2

The SO-8 package is widely preferred for commercial-industrial

surface mount applications and suited for low voltage applications G1 G2
such as DC/DC converters.
S1 S2

Absolute Maximum Ratings

Symbol Parameter Rating Units
N-channel P-channel
VDS Drain-Source Voltage 30 -30 V
VGS Gate-Source Voltage ±20 ±20 V
3
ID@TA=25℃ Continuous Drain Current 7.0 -5.3 A
3
ID@TA=70℃ Continuous Drain Current 5.8 -4.7 A
1
IDM Pulsed Drain Current 20 -20 A
PD@TA=25℃ Total Power Dissipation 2 W
Linear Derating Factor 0.016 W/℃
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
3
Rthj-a Maximum Thermal Resistance, Junction-ambient 62.5 ℃/W

Data and specifications subject to change without notice 1

200805264
 AP4501GM
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N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A - - 28 mΩ
VGS=4.5V, ID=5A - - 42 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V
gfs Forward Transconductance VDS=10V, ID=6A - 6 - S
IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=24V ,VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
2
Qg Total Gate Charge ID=6A - 8.4 13.5 nC
Qgs Gate-Source Charge VDS=24V - 1.4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.7 - nC
2
td(on) Turn-on Delay Time VDS=20V - 5 - ns
tr Rise Time ID=1A - 8 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18.5 - ns
tf Fall Time RD=20Ω - 9 - ns
Ciss Input Capacitance VGS=0V - 485 770 pF
Coss Output Capacitance VDS=25V - 80 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=7A, VGS=0V - - 1.2 V
2
trr Reverse Recovery Time IS=6A, VGS=0V, - 19 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC

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 AP4501GM
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P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-5.3A - - 50 mΩ
VGS=-4.5V, ID=-4.2A - - 90 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-5A - 5 - S
IDSS Drain-Source Leakage Current VDS=-30V, VGS=0V - - -1 uA
o
Drain-Source Leakage Current (Tj=70 C) VDS=-24V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=±20V - - ±100 nA
2
Qg Total Gate Charge ID=-5A - 8 13 nC
Qgs Gate-Source Charge VDS=-15V - 1.7 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 4.5 - nC
2
td(on) Turn-on Delay Time VDS=-15V - 6.7 - ns
tr Rise Time ID=-1A - 10 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 21 - ns
tf Fall Time RD=15Ω - 10 - ns
Ciss Input Capacitance VGS=0V - 595 950 pF
Coss Output Capacitance VDS=-25V - 80 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=-2.6A, VGS=0V - - -1.2 V
2
trr Reverse Recovery Time IS=-5A, VGS=0V, - 18 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 11 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 ℃/W when mounted on Min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

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N-Channel
40 40

T A =25 ℃ 10V T A =150 ℃ 10V

7.0V 7.0V
5.0V 5.0V

ID , Drain Current (A)

ID , Drain Current (A)

30 30
4.5V 4.5V

20 20

V G =3.0V V G =3.0V
10 10

0 0
0 1 2 3 4 0 1 2 3 4 5

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

34 1.8

I D =7A
I D = 5A V G =10V
T A = 25 o C
Normalized R DS(ON)

30

1.4
RDS(ON0 (mΩ)

26

1.0

22

30 -30
18 0.6
2 4 6 8 10 -50 0 50 100 150

o
V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
10 1.4

8 1.2
Normalized VGS(th) (V)

T j =150 o C T j =25 o C
6 1.0
IS(A)

4 0.8

2 0.6

0 0.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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 AP4501GM
N-Channel
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f=1.0MHz
12 1000
VGS , Gate to Source Voltage (V)

10 C iss

C (pF)
ID=6A
V DS = 24 V
6 100
C oss
C rss
4

0 10
0 3 6 9 12 15 18 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (R thja)

Duty factor=0.5

10

100us 0.2
ID (A)

1ms 0.1
1 0.1

10ms 0.05
PDM
100ms t
T
0.1 0.02

o 1s
T A =25 C 0.01 Duty factor = t/T

Single Pulse 30 -30 Peak Tj = PDM x Rthja + Ta

Rthja=135 oC/W
DC Single Pulse

0.01 0.01
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%

QG
4.5V

QGS QGD

10%
VGS

td(on) tr td(off) tf
Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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P-Channel
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40 40

T A =25 o C T A = 150 o C - 10V

- 10V - 7.0V
- 7.0V
- 5.0V - 5.0V
-ID , Drain Current (A)

-ID , Drain Current (A)

30 30

- 4.5V
- 4.5V

20 20

10
V G = - 3 .0V 10 V G = - 3 .0V

0 0
0 1 2 3 4 5 6 0 2 4 6 8

-V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

70 1.6

I D = -4.2 A I D = -5.3 A
T A =25 o C V G = - 10V
1.4

60
Normalized R DS(ON)
RDS(ON) (mΩ)

1.2

50

1.0

40
0.8

30 -30
30 0.6
2 4 6 8 10 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V) o

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
8 1.2
Normalized -VGS(th) (V)

1.0
-IS(A)

T j =150 o C T j =25 o C
0.8

0 0.6
0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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 AP4501GM
P-Channel
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f=1.0MHz
15 1000

C iss
-VGS , Gate to Source Voltage (V)

12

I D = -5.3A
V DS = -15V
9

C (pF)
100
C oss
6
C rss

0 10
0.0 4.0 8.0 12.0 16.0 20.0 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 Normalized Thermal Response (R thja) 1

Duty factor=0.5

10

0.2

100us
-ID (A)

1ms
0.1
1 0.1

10ms 0.05
PDM
100ms t

0.02 T
0.1

T A =25 o C 1s
0.01
Duty factor = t/T

Single Pulse 30 -30 Peak Tj = PDM x Rthja + Ta

Rthja=135 oC/W
DC Single Pulse

0.01 0.01
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

-V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
-4.5V
QGS QGD
10%
VGS

td(on) tr td(off) tf Charge Q

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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ADVANCED POWER ELECTRONICS CORP.

Package Outline : SO-8

D
Millimeters
SYMBOLS MIN NOM MAX
A 1.35 1.55 1.75
8 7 6 5 A1 0.10 0.18 0.25
B 0.33 0.41 0.51
E1 E C 0.19 0.22 0.25
D 4.80 4.90 5.00
1 E1 3.80 3.90 4.00
2 3 4
E 5.80 6.15 6.50
L 0.38 0.71 1.27

e θ 0 4.00 8.00
e 1.27 TYP
B

A1
DETAIL A L θ

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.
c

DETAIL A

Part Marking Information & Packing : SO-8

Part Number
Package Code
meet Rohs requirement
4501GM
YWWSSS Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence