27-10-2021 LAB 4: Semiconductor

diodes and their

applications.
GROUP: A3

Salinas Infante, Javier, Abdullah Alhalabi

FACULTY OF ELECTRICAL ENGINEERING
IS-FEE-10006W ELECTRONICS I
ANDRZEJ KARPIUK
 GROUP: A3 October 27th, 2021

Index

1.- OBJECTIVES .............................................................................................................................. 2

2.- EQUIPMENT ............................................................................................................................. 2
3.- EXPERIMENTS........................................................................................................................... 2
3.1 Diode Forward I-V Characteristics....................................................................................... 2
Schematic diagram ................................................................................................................ 2
Results ................................................................................................................................... 3
2.2 Diode Reverse I-V Characteristics ....................................................................................... 5
Schematic diagrams .............................................................................................................. 5
Results ................................................................................................................................... 5
2.3 Half Wave Rectifier.............................................................................................................. 5
Schematic diagrams .............................................................................................................. 5
Results ................................................................................................................................... 6
2.4 Half Wave Rectifier with a Capacitor Filter ......................................................................... 6
Schematic diagrams .............................................................................................................. 6
Results ................................................................................................................................... 6
4.- CONCLUSIONS .......................................................................................................................... 7

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1.- OBJECTIVES

• Acquired the knowledge of I-V characteristics and basic properties of semiconductor

diodes.
• Study half-wave rectifier circuits based on semiconductor diodes.

2.- EQUIPMENT

• Osciloscope
• Function generator
• Power supply
• Digital multimeters
• Breadboard
• Diodes( 1N5822 and 1N5408)
• Resistor 470Ω ± 1%
• Capacitor 22µF

3.- EXPERIMENTS
3.1 Diode Forward I-V Characteristics

In this experiment we must build the circuit in the breadboard using a Resistor 470Ω ± 1% and
two different diodes 1N5822 and 1N5408. First of all, we use the Silicon diode 1N5408.

Schematic diagram

FIGURE 1 DIODE FORWARD I-V

When the circuit is built, we use an external voltage source, that was the power supply, in
order to set different currents through the diode and obtain the voltage drop in the diode and
the static and dynamic resistance.

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Results

Used formula:
𝑉𝑑
𝑅𝑆 =
𝐼𝑑

Range I(mA) Voltage (V) Rs(Ω)

0,1-0,2 mA 0,16 0,462 2887,5
1-2mA 1,72 0,569 330,81
4-5mA 4,22 0,611 144,79
10-11mA 10,18 0,651 63,95
15-16mA 15,71 0,669 42,01
24-25mA 24,9 0,688 27,63
50mA 51,6 0,718 13,91
100mA 101,8 0,745 7,32
TABLE 1 RS CALCULATION DIODE 1N5408
So, using the data obtained and using excel we can draw the diode characteristic.

Diode characteristic 1N5408

120
100
Current (mA)

80
60
40
20
0
0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8
Voltage (v)

FIGURE 2 DIODE CHARACTERISTIC OF 1N5408.

∆𝑉𝑑
𝑅𝑑 =
∆𝐼𝑑

∆V (V) ∆I (mA) Rd (mΩ)

0,569-0,462=0,107 1,72-0,16=1,56 69
0,611-0,569=0,042 4,22-1,72=2,5 17
0,651-0,611=0,04 10,18-4,22=5,96 6,7
0,669-0,651=0,018 15,71-10,18=5,53 3,3
0,688-0,669=0,019 24,9-15,71=9,79 1,9
0,718-0,688=0,03 51,6-24,9=26,7 1,1
0,745-0,718=0,027 101,8-51,6=50,2 0,54
TABLE 2 RD CALCULATION DIODE 1N5408

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We repeat the same but with the Schottky diode 1N5822.

Range I(mA) Voltage (V) Rs(Ω)

0,1-0,2 mA 0,11 0,137 1245
1-2mA 1,41 0,203 143,9
4-5mA 4,82 0,236 48,9
10-11mA 10,39 0,257 24,73
15-16mA 15,65 0,268 17,24
24-25mA 24,3 0,279 11,48
50mA 51,7 0,301 5,82
100mA 101,1 0,320 3,1
TABLE 3 RS CALCULATION DIODE 1N5822
So, using the data obtained and using excel que can draw the diode characteristic.

Diode characteristic 1N5822

120
100
Current (mA)

80
60
40
20
0
0 0,05 0,1 0,15 0,2 0,25 0,3 0,35
Voltage (V)

FIGURE 3 DIODE CHARACTERISTIC OF 1N5822.

Now we use the other formula in order to obtain the Rd, as you can see in the next table.

∆V (V) ∆I (mA) Rd (mΩ)

0,203-0,137=0,066 1,41-0,11=1,3 50,7
0,236-0,203=0,033 4,82-1,41=3,41 9,68
0,257-0,236=0,021 10,39-4,82=5,57 3,77
0,268-0,257=0,011 15,65-10,39=5,26 2,09
0,279-0,268=0,011 24,3-15,65=8,65 1,27
0,301-0,279=0,022 51,7-24,3=27,4 0,80
0,320-0,301=0,019 101,1-51,7=49,4 0,38
TABLE 4 RD CALCULATION DIODE 1N5822

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3.2 Diode Reverse I-V Characteristics

Now using first the Schottky diode 1N5822 in reverse bias and then the Silicon diode 1N5822
with a 30 V from the power supply we can obtain the reverse current that flows through each
diode.

Schematic diagrams

FIGURE 4 DIODE REVERSE I-V

Results
• 1N5408

With a 30 V from the power supply we obtain 𝑰𝑹 = 𝟒, 𝟖𝝁𝑨

• 1N5822

With a 30 V from the power supply we obtain 𝑰𝑹 < 𝟎, 𝟏 𝝁𝑨

3.3 Half Wave Rectifier

Schematic diagrams

FIGURE 5 HALF WAVE RECTIFIER

We have to create a sinewave with a 50Hz of frequency and 10 V of amplitude.

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Results

After building the circuit with the function generator, osciloscope and breadboard we
measured the amplitude of the sinewave. As we only need the channel 2 we hide the channel
1 in order to have a better view in the osciloscope. So, using the cursors we obtain an
amplitude of 8,72 V.

FIGURE 6 GENERATOR SHOWING SINEWAVE

3.4 Half Wave Rectifier with a Capacitor Filter

We repeat the same as before but including the 22µF capacitor in parallel with the resistor.

Schematic diagrams

FIGURE 7 HALF WAVE RECTIFIER WITH CAPACITOR

Results
So, we obtain a ripple voltage of 6,3V.

FIGURE 8 GENERATOR SHOWING WAVE

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4.- CONCLUSIONS

Once we have analyzed the data, we can make some conclusions.

• First of all, we can see that our data obtained during the lab is good because the diode
characteristic has the shape it should have with both diodes. As we can see in Silicon
diode, we have threshold voltage of 0,6 V. However, in Schottky diode we have a
threshold voltage of 0,25 V.
• Comparing both diodes in forward position we can see that Schottky diode is better
because it has a lower drop voltage so our circuit has less dissipated power.
• On the other hand, in reverse position, we can see that Silicon diode is better because
it has less value of reverse current so it is more difficult to break than Schottky in
reverse position.
• Finally on the Half wave rectifier we can see that is better the one with the capacitor
because the diode is conducting more time as we can see in the figure 9 and 10 and in
the results of the ripple voltage.

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