1. (a) Compute the electrical conductivity of a cylindrical silicon specimen 7.0 mm (0.28 in.

)
diameter and 57 mm (2.25 in.) in length in which a current of 0.25 A passes in an axial
direction. A voltage of 24 V is measured across two probes that are separated by 45 mm
(1.75 in.).

VA 2 2 2
ρ= ; A=π r =π ( 3.5 ) =38.48 mm
Il

24 V ∗38.48 x 10−3 m2
ρ= =82.1Ω m
0.25 A∗45 x 10−3 m

1 1 −1
σ= = =0.0122 [ Ω m ]
ρ 82.1 Ω m

(b) Compute the resistance over the entire 57 mm (2.25 in.) of the specimen.

( ) ( )
−3
L 57 x 10 m
R=ρ =82.1Ω m∗ =121.6 Ω
A −3 2
38.48 x 10 m

2. What is the distinction between electronic and ionic conduction?

Electronic conduction consists on the movement of particles caused by a force on them from an external
electric field. Positive particles move on the direction of the field and negative particles in the opposite
way.

Ionic conduction undergoes in ionic materials. It consists of the net motion of charged ions which produce
a current.

3. In terms of electron energy band structure, discuss reasons for the difference in electrical
conductivity among metals, semiconductors, and insulators.
Metals have a high conductivity because they need very little or no energy for their electrons within to
jump form band to band. This energy is called the Fermi Energy which depends on the distance between
atoms in a material.

If the Fermi Energy is less than 2eV, then the material can be determined a semiconductor. Which means
it can be a conductor or an insulator depending on the enhancement that is made to the material such as an
increase of voltage or increase in temperature.

If the Fermi Energy is higher than 2eV, then the material is denominated as an insulator which means that
it is very hard or impossible to produce a current through that material.

4. (a) Calculate the drift velocity of electrons in silicon at room temperature and when the
 magnitude of the electric field is 500 V/m.

Electron mobility of silicon = 0.145

v=με

v=
0.145 m2
V∗s (
V
500 =72.5
m
m
s )

(b) Under these circumstances, how long does it take an electron to traverse a 25-mm (1-in.)
length of crystal?

−3
d 25 x 10 m −4
t= = =3.4 x 10 s
v 72.5m/ s

5. At room temperature the electrical conductivity and the electron mobility for aluminum are
3.8 × 107 (Ω.m)–1 and 0.0012 m2/V.s, respectively.
(a) Compute the number of free electrons per cubic meter for aluminum at room temperature.

σ 3.8 x 107 ( Ω∗m )−1

σ =n∗e∗μe → n= =
( )
e∗μe m
2
1.6 x 10−19 C∗1.2 x 10−3
V ∗s

n=1.99 x 1029 m−3

(b) What is the number of free electrons per aluminum atom? Assume a density of 2.7 g/cm3.

29 −3
n=1.99 x 10 m
23 6
Na∗ρ 6.022 x 10 ∗2.7 x 10 28 3
N= = =6 x 10 m
A 26.7

n 1.99 x 10 29 m−3
= 28 3
=3.16
N 6 x 10 m

6. (a) Calculate the number of free electrons per cubic meter for silver, assuming that there
are 1.3 free electrons per silver atom. The electrical conductivity and density for Ag are 6.8
× 107 (Ω.m)–1 and 10.5 g/cm3, respectively.
n
=number of free electron per atom
N

n
N
=1.3→ N=
Na∗ρ
A
→n=1.3
Na∗ρ
A ( )
1.3 ( 6.022 x 10 ∗10.5 x 10 )
23 6
n= =7.62 x 1023 m−3
107.87
(b) Now compute the electron mobility for Ag.

σ 6.8 x 107
σ =n∗e∗μe → μe= =
ne 1.6 x 10−19∗7.62 x 1028
2
m
μe=0.00577
V ∗s

7. (a) Using the data presented in Figure 18.16, determine the number of free electrons per
atom for intrinsic germanium and silicon at room temperature (298 K). The densities for
Ge and Si are 5.32 and 2.33 g/cm3, respectively.

Na∗ρ 6.022 x 1023∗5.32 x 106

Nge= = =4.41 x 1028 m3
A 72.64
19
n 5.0 x 10 −9
=free electrons per atom of ≥ 28 3
=1.13 x 10
N 4.41 x 10 m

Na∗ρ 6.022 x 1023∗2.33 x 106 28 3

N si= = =5.00 x 10 m
A 28.09
16 −3
n 7 x 10 m −12
=free electrons per atom of Si =1. 40 x 10
N 28 3
5.00 x 10 m

(c) Now explain the difference in these free-electron-per-atom values.

Its because the band gap energy for Si is much greater that the one for Ge. Hence, its much more harder
for a valence electron to cross bands for Si.