PD - 95267

IRF7319PbF
HEXFET® Power MOSFET
l Generation V Technology N-CHANNEL MOSFET
N-Ch P-Ch
l Ultra Low On-Resistance S1
1 8
D1
l Dual N and P Channel MOSFET G1
2 7
D1
l Surface Mount VDSS 30V -30V
3 6
l Fully Avalanche Rated S2 D2

l Lead-Free G2
4 5
D2
P-CHANNEL MOSFET RDS(on) 0.029Ω 0.058Ω
Description Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, SO-8
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol Maximum Units
N-Channel P-Channel
Drain-Source Voltage V DS 30 -30
V
Gate-Source Voltage V GS ± 20
TA = 25°C 6.5 -4.9
Continuous Drain Current… ID
TA = 70°C 5.2 -3.9
A
Pulsed Drain Current IDM 30 -30
Continuous Source Current (Diode Conduction) IS 2.5 -2.5
TA = 25°C 2.0
Maximum Power Dissipation … PD W
TA = 70°C 1.3
Single Pulse Avalanche Energy EAS 82 140 mJ
Avalanche Current IAR 4.0 -2.8 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt ‚ dv/dt 5.0 -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C

Thermal Resistance Ratings

Parameter Symbol Limit Units
Maximum Junction-to-Ambient … RθJA 62.5 °C/W

8/17/04
IRF7319PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V (BR)DSS Drain-to-Source Breakdown Voltage N-Ch 30 — — VGS = 0V, ID = 250µA
V
P-Ch -30 — — VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient N-Ch — 0.022 — Reference to 25°C, ID = 1mA
V/°C
P-Ch — 0.022 — Reference to 25°C, ID = -1mA
— 0.023 0.029 VGS = 10V, ID = 5.8A „
N-Ch
RDS(ON) Static Drain-to-Source On-Resistance — 0.032 0.046 VGS = 4.5V, ID = 4.7A „
Ω
— 0.042 0.058 VGS = -10V, ID = -4.9A „
P-Ch
— 0.076 0.098 VGS = -4.5V, ID = -3.6A „
V GS(th) Gate Threshold Voltage N-Ch 1.0 — — VDS = VGS, I D = 250µA
V
P-Ch -1.0 — — VDS = VGS, I D = -250µA
gfs Forward Transconductance N-Ch — 14 — VDS = 15V, I D = 5.8A „
S
P-Ch — 7.7 — VDS = -15V, I D = -4.9A „
N-Ch — — 1.0 VDS = 24V, V GS = 0V
I DSS Drain-to-Source Leakage Current P-Ch — — -1.0 VDS = -24V, VGS = 0V
µA
N-Ch — — 25 VDS = 24V, VGS = 0V, T J = 55°C
P-Ch — — -25 VDS = -24V, V GS = 0V, TJ = 55°C
I GSS Gate-to-Source Forward Leakage N-P –– — ±100 nA VGS = ±20V
Qg Total Gate Charge N-Ch — 22 33
N-Channel
P-Ch — 23 34
I D = 5.8A, VDS = 15V, VGS = 10V
Qgs Gate-to-Source Charge N-Ch — 2.6 3.9
nC „
P-Ch — 3.8 5.7
P-Channel
Qgd Gate-to-Drain ("Miller") Charge N-Ch — 6.4 9.6
I D = -4.9A, V DS = -15V, VGS = -10V
P-Ch — 5.9 8.9
td(on) Turn-On Delay Time N-Ch — 8.1 12
N-Channel
P-Ch — 13 19
VDD = 15V, ID = 1.0A, RG = 6.0Ω,
tr Rise Time N-Ch — 8.9 13
RD = 15Ω
P-Ch — 13 20
ns „
td(off) Turn-Off Delay Time N-Ch — 26 39
P-Channel
P-Ch — 34 51
VDD = -15V, ID = -1.0A, RG = 6.0Ω,
tf Fall Time N-Ch — 17 26
RD = 15Ω
P-Ch — 32 48
Ciss Input Capacitance N-Ch — 650 — N-Channel
P-Ch — 710 — V GS = 0V, V DS = 25V, ƒ = 1.0MHz
Coss Output Capacitance N-Ch — 320 — pF
P-Ch — 380 — P-Channel
N-Ch — 130 — V GS = 0V, V DS = -25V, ƒ = 1.0MHz
Crss Reverse Transfer Capacitance
P-Ch — 180 —

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
N-Ch — — 2.5
IS Continuous Source Current (Body Diode) P-Ch — — -2.5 A
N-Ch — — 30
ISM Pulsed Source Current (Body Diode)  P-Ch — — -30
N-Ch — 0.78 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
VSD Diode Forward Voltage P-Ch — -0.78 -1.0 TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
N-Ch — 45 68 ns N-Channel
trr Reverse Recovery Time P-Ch — 44 66 TJ = 25°C, I F =1.7A, di/dt = 100A/µs
N-Ch — 58 87 nC P-Channel „
Qrr Reverse Recovery Charge P-Ch — 42 63 TJ = 25°C, I F = -1.7A, di/dt = 100A/µs

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
‚ N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C … Surface mounted on FR-4 board, t ≤ 10sec.
P-Channel I SD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
 N-Channel IRF7319PbF

100 100
VGS VGS
TOP 15V TOP 15V
10V 10V
7.0V 7.0V
5.5V
I D , Drain-to-Source Current (A)

5.5V

I D, Drain-to-Source Current (A)

4.5V 4.5V
4.0V 4.0V
3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V

10 10
3.0V
3.0V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25°C A TJ = 150°C
1 1 A
0.1 1 10 0.1 1 10
V DS , Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)

TJ = 25°C
TJ = 150°C
TJ = 150°C
10 10
TJ = 25°C

VDS = 10V
20µs PULSE WIDTH VGS = 0V
1
A 1 A
3.0 3.5 4.0 4.5 5.0 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode

Forward Voltage
IRF7319PbF N-Channel

2.0 0.040

RDS (on) , Drain-to-Source On Resistance (Ω)

ID = 5.8A
RDS(on) , Drain-to-Source On Resistance

V GS = 4.5V
0.036
1.5
(Normalized)

0.032

1.0

0.028

0.5
0.024 V GS = 10V

VGS = 10V
0.0 0.020 A
-60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40
TJ , Junction Temperature ( °C)
I D , Drain Current (A)

Fig 5. Normalized On-Resistance Fig 6. Typical On-Resistance Vs. Drain

Vs. Temperature Current

0.12 200
IDID
E AS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)

TOP 1.8A
3.2A
0.10 BOTTOM 4.0A
160

0.08
120

0.06

I D = 5.8A 80
0.04

40
0.02

0.00 A 0 A
0 3 6 9 12 15 25 50 75 100 125 150
Starting T J , Junction Temperature (°C)
V GS , Gate-to-Source Voltage (V)

Fig 7. Typical On-Resistance Vs. Gate Fig 8. Maximum Avalanche Energy

Voltage Vs. Drain Current
 N-Channel IRF7319PbF

1200 20
V GS = 0V, f = 1MHz ID = 5.8A
C iss = Cgs + C gd , Cds SHORTED VDS = 15V

VGS , Gate-to-Source Voltage (V)

C rss = C gd
C oss = C ds + C gd 16
900
Ciss
C, Capacitance (pF)

12
Coss
600

300 Crss
4

0 A 0
1 10 100 0 10 20 30 40

VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 9. Typical Capacitance Vs. Fig 10. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage

100

0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02 P DM
1
0.01 t1
t2

Notes:
SINGLE PULSE
(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

IRF7319PbF P-Channel

100 100
VGS VGS
TOP - 15V TOP - 15V
- 10V - 10V
- 7.0V - 7.0V
- 5.5V

-I D , Drain-to-Source Current (A)

- 5.5V
-I D , Drain-to-Source Current (A)

- 4.5V - 4.5V
- 4.0V - 4.0V
- 3.5V - 3.5V
BOTTOM - 3.0V BOTTOM - 3.0V

10 10

-3.0V -3.0V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25°C TJ = 150°C A
1 A 1
0.1 1 10 0.1 1 10
-VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V)

Fig 12. Typical Output Characteristics Fig 13. Typical Output Characteristics

100 100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)

TJ = 25°C
TJ = 150°C
TJ = 150°C
10 10

TJ = 25°C

V DS = -10V
20µs PULSE WIDTH VGS = 0V
1 1 A
A
3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.4 0.6 0.8 1.0 1.2 1.4

-VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V)

Fig 14. Typical Transfer Characteristics Fig 15. Typical Source-Drain Diode
Forward Voltage
 P-Channel IRF7319PbF

RDS(on) , Drain-to-Source On Resistance ( Ω )

2.0 0.6
ID = 4.9A
RDS(on) , Drain-to-Source On Resistance

0.5

1.5

0.4
(Normalized)

1.0 0.3

V GS = -4.5V
0.2
0.5

0.1
VGS = -10V
VGS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 A
0 10 20 30
TJ , Junction Temperature ( ° C) -ID , Drain Current (A)

Fig 16. Normalized On-Resistance Fig 17. Typical On-Resistance Vs. Drain
Vs. Temperature Current

0.16 300
RDS(on) , Drain-to-Source On Resistance ( Ω )

ID
EAS , Single Pulse Avalanche Energy (mJ)

TOP -1.3A
250 -2.2A
BOTTOM -2.8A
0.12

200

0.08 150
I D = -4.9A

100
0.04

50

0.00 A 0
0 3 6 9 12 15 25 50 75 100 125 150
-VGS , Gate -to-Source Voltage (V) Starting TJ , Junction Temperature ( °C)

Fig 18. Typical On-Resistance Vs. Gate Fig 19. Maximum Avalanche Energy
Voltage Vs. Drain Current
IRF7319PbF P-Channel

1400 20
VGS = 0V f = 1 MHz ID = -4.9A
Ciss = Cgs + Cgd + Cds SHORTED
VDS =-15V

-VGS , Gate-to-Source Voltage (V)

1200 Crss = Cgd
Coss = Cds + Cgd 16
C, Capacitance (pF)

1000
Ciss
12
800
Coss

600
8

400 Crss
4
200

0 A 0
1 10 100 0 10 20 30 40

- V DS , Drain-to-Source Voltage (V)

QG , Total Gate Charge (nC)

Fig 20. Typical Capacitance Vs. Fig 21. Typical Gate Charge Vs.
Drain-to-Source Voltage Gate-to-Source Voltage

100

0.50
Thermal Response (Z thJA )

0.20
10
0.10

0.05

0.02 PDM
1
0.01 t1
t2

Notes:
SINGLE PULSE
(THERMAL RESPONSE) 1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.1
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

 IRF7319PbF

SO-8 Package Outline

Dimensions are shown in millimeters (inches)
INCHES MILL IME T E RS
DIM
D B MIN MAX MIN MAX
A 5 A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
b .013 .020 0.33 0.51
8 7 6 5 c .0075 .0098 0.19 0.25
6 H D .189 .1968 4.80 5.00
E
0.25 [.010] A E .1497 .1574 3.80 4.00
1 2 3 4
e .050 B AS IC 1.27 BAS IC
e1 .025 B AS IC 0.635 BAS IC
H .2284 .2440 5.80 6.20
K .0099 .0196 0.25 0.50
6X e
L .016 .050 0.40 1.27
y 0° 8° 0° 8°

e1 K x 45°
A
C y

0.10 [.004]
8X b A1 8X L 8X c

0.25 [.010] C A B 7

F OOT PRINT
NOT E S :
1. DIME NS IONING & T OLE RANCING PER AS ME Y14.5M-1994. 8X 0.72 [.028]
2. CONT ROLLING DIME NS ION: MILLIMET E R
3. DIME NS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONF ORMS T O JEDE C OUT LINE MS -012AA.
5 DIME NS ION DOES NOT INCLUDE MOLD PROT RU S IONS .
MOLD PROT RUS IONS NOT T O E XCEED 0.15 [.006].
6.46 [.255]
6 DIME NS ION DOES NOT INCLUDE MOLD PROT RU S IONS .
MOLD PROT RUS IONS NOT T O E XCEED 0.25 [.010].
7 DIME NS ION IS T HE LE NGT H OF LEAD F OR S OLDE RING T O
A S U BS T RAT E .

3X 1.27 [.050] 8X 1.78 [.070]

SO-8 Part Marking

E XAMPLE : T HIS IS AN IRF 7101 (MOS F E T )

DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPT IONAL)
Y = L AS T DIGIT OF T HE YE AR
XXXX WW = WE E K
INT E RNAT IONAL F 7101 A = AS S E MB L Y S IT E CODE
RE CT IF IE R L OT CODE
LOGO
PART NU MB E R
IRF7319PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
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