Incheon National University

Electronic Circuits

<Chapter 5>
BJTs
OUTLINE

 Common-Emitter Amplifiers
 Common-Base Amplifiers
 Common-Collector Amplifiers (Emitter Followers)
 SPICE BJT Models

Incheon National University –2– Chong-Gun Yu

Common-Emitter Amplifiers
CE with Biasing

I S  5 10 17 , VA  , I C  1mA

100 very low dc resistance (< 1Ω)
VX   2.5  2.5mV IC 1m
100k  100 → shorts the drain to ground gm    38.4mA/V
VT 25.852m
(X) → driving Q1 into deep saturation region
Av   g m ( RC // Rspea ker )
an impedance of 8Ω in the audio range
 38.4m(1k // 8)  0.3V/V

a buffer stage is required

Incheon National University –3– Chong-Gun Yu

Capacitively Coupled CE Amplifier

 dc analysis

CC 1 , CC 2 coupling capacitor

CE bypass capacitor

Incheon National University –4– Chong-Gun Yu

 ac (signal) analysis

Rin  RB1 // RB 2 // r Av   g m (ro // RC // RL )

Ro  ro // RC Rin
Gv   g m (ro // RC // RL )
Gm   g m Rin  Rsig

Incheon National University –5– Chong-Gun Yu

Example
 Find dc voltages & currents and Rin , Ro , Av , Gv
VCC  15V, RE  8.6kΩ, RC  18k
RB1  182kΩ, RB 2  100kΩ
Rsig  10kΩ, RL  20k
VA  100V,   100
CC 1 , CC 2 , C E  

■ ac analysis
■ dc analysis (Assume VBE  0.7 V)
g m  I C / VT  0.495m / 25.852m  19.15mA/V
VBB 
RB 2
VCC  5.319V VC  VCC  RC I C  15  8.91  6.09V r   / g m  5.22k, ro  VA / I C  202k
RB1  RB 2
VE  RE I E  8.6  0.5  4.3V Rin  RBB // r  64.54k // 5.22k  4.83k
RBB  RB1 // RB 2  64.54k
VB  VBE  VE  5.0V Ro  ro // RC  202k // 18k  16.53k
VBB  VBE
IE   0.5mA VB 5
RE  [ RBB /(   1)] I RB 2    50 A
RB 2 100k Av   g m (ro // RC // RL )  19.15m  9.049k  173.3V/V
I C  I E  0.495mA
I RB1  I RB 2  I B  50u  4.95u  54.95A Rin 4.83
I B  I C /   4.95A Gv  Av   173.3  56.44V/V
Rin  Rsig 4.83  10

Incheon National University –6– Chong-Gun Yu

PSPICE Example

Bias Analysis
VA  100V,   100, VBE  0.7 V, I C  0.495mA
IC 0.495m
VBE  0.7 V  I S    8.612 10 16
eVBE / VT e 0.7 / 25.852 m

Incheon National University –7– Chong-Gun Yu

Transient Analysis : Rin & Ro

Rin  1m / 208.074n  4.81k Ro  1m / 60.591n  16.50k

Incheon National University –8– Chong-Gun Yu

Transient Analysis : Av & Gv

Av  170.875m / 1m  170.9V/V Gv  56.801m / 1m  56.80V/V

Incheon National University –9– Chong-Gun Yu

 CE with an Emitter Resistance
VA  
Rin  RB1 // RB 2 //[(   1)(re  RE )]
Ro  RC
 gm
Gm   
re  RE 1  g m RE
vo  ( RC // RL ) g ( R // RL )
Av    m C
vi re  RE 1  g m RE
Rin
Gv  Av
Rsig  Rin

T.E.C. Overall Voltage Gain

vo  ( RC // RL )
RB1 // RB 2 
VThev  vsig vThev RThev /(   1)  re  RE
RB1 // RB 2  Rsig
vo  ( RC // RL ) RB1 // RB 2
RThev  RB1 // RB 2 // Rsig Gv   
vsig RThev /(   1)  re  RE RB1 // RB 2  Rsig

Incheon National University – 10 – Chong-Gun Yu

Example
 Find Gv
VCC  15V, RE  8.6kΩ, RC  18k
RB1  182kΩ, RB 2  100kΩ
Rsig  10kΩ, RL  20k
VA  ,   100
CC 1 , CC 2  

g m  I C / VT  0.495m / 25.852m  19.15mA/V

I C  0.495mA
re   / g m  51.7

Rin  RB1 // RB 2 //[(   1)(re  RE )] RThev  RB1 // RB 2 // Rsig  182k // 100k // 10k  8.658kΩ
 182 // 100 //[101  (0.0517  8.6)]  60.1kΩ vo  ( RC // RL ) RB1 // RB 2
Gv   
vo  ( RC // RL ) 0.99(18 // 20) vsig RThev /(   1)  re  RE RB1 // RB 2  Rsig
Av     1.084V/V
vi re  RE 0.0517  8.6 0.99  (18 // 20) 182 // 100
 
Rin 60.1 8.658 / 101  0.0517  8.6 182 // 100  10
Gv  Av   1.084  0.929V/V
Rsig  Rin 10  60.1  0.99 1.084  0.866  0.929V/V

Incheon National University – 11 – Chong-Gun Yu

PSPICE Example
VA  ,   100, VBE  0.7 V, I C  0.495mA
IC 0.495m 16
VBE  0.7 V  I S    8.612  10
eVBE / VT e 0.7 / 25.852 m

Gv  0.929V/V

Incheon National University – 12 – Chong-Gun Yu

Example
 Determine the voltage gain VA  

vout   ( RC // R2 )
R1 
VThev  vin vThev RThev /(   1)  re  RE
R1  RS
vout   ( RC // R2 ) R1
RThev  R1 // RS  
vin RThev /(   1)  re  RE R1  RS

Incheon National University – 13 – Chong-Gun Yu

Example
 Determine the voltage gain and input resistance VA  

R1
Req  re 2 
 1

vout  RC  RC

Av   
vin re1  Req r  r  R1
e1 e2
 1
Rin  (   1)(re1  Req )  (   1)(re1  re 2 )  R1  r 1  r 2  R1

Incheon National University – 14 – Chong-Gun Yu

Common-Base Amplifiers
CB with Biasing

lacking bias current shorted the signal to ac ground

 RE provides a path for the bias current at the cost of lowering the input impedance.
 RE shunts the input source current to ground, thus wasting the signal.
 For RE to affect the input impedance negligibly, 1
RE  re   I C RE  VT
gm

Incheon National University – 15 – Chong-Gun Yu

VA  

vout RC

vin CE
RB /(   1)  re  RE
vout RC  Effect of bond wire inductance in a CB stage

vin RB /(   1)  re  RE
CB ■ The CB gain reduction as a result of an impedance in
series with the base
 except for a negative sign, the two stages exhibit ■ This effect is especially pronounced at high frequencies
equal gains. ■ a 5-mm bond wire has an inductance of about 5nH,
 RB reduces the voltage gain exhibiting an impedance of 157 ohm at 5 GHz.

Incheon National University – 16 – Chong-Gun Yu

 must ensure I1  I B to minimize sensitivity to β

R2
Vb  VCC
R1  R2

 a resistance in series with the base reduces the voltage gain.

■ For this reason, a “bypass capacitor” is often tied from the base to ground, acting as a short circuit at
frequencies of interest

Incheon National University – 17 – Chong-Gun Yu

 Capacitively Coupled CB Amplifier
VA   VA   Rin 
1
// R1 , Ro  RD
gm
1
Rin  re // RE  // RE , Ro  RC vx

(1 / g m ) // R1

1
vin (1 / g m ) // R1  RS 1  (1  g m R1 ) RS / R1
,
gm vout
Av   g m RD
vx
vx re // RE 1 1
  
vout v x vout g m RD
Gv    
vin vin v x 1  (1  g m R1 ) RS / R1
vin re // RE  RS 1  (1  RE / re ) RS / RE 1  (1  g m RE ) RS / RE
VA   ro  RL
v Rin  // R1 , Ro  ro // RD
Av  out  g m RC 1  ( g m  g mb )ro

vx
vout v x vout g m RC g m RC
Gv     
vin vin v x 1  (1  RE / re ) RS / RE 1  (1  g m RE ) RS / RE
VA  
T.E.C. ro  RC
Rin  RE // r // , Ro  ro // RC
1  g m ro
vout RC RC
  vout
vThev re  RThev re  RS // RE Av   ( g m  g o )(ro // RC )
vx
vout vout RE RC RE g m RC
Gv     vout v x vout Rin
vin vThev RS  RE re  RS // RE RS  RE 1  (1  RE / re ) RS / RE Gv     Av
vin vin v x Rin  Rs

Incheon National University – 18 – Chong-Gun Yu

Example
 Design the CB amplifier
VCC  1.5V, vout / vin  5 V/V, Rin  50

VA  ,   100, I S  5 10 16

 Solution
1 IC 0.461m
Selecting RE  500, for RE  re  VBE  VT ln  25.852m  ln 16
 712.2mV
gm IS 5 10
Rin  re // RE  50  re // 500  1 / re  18m VB  VBE  RE I E  0.7122  500  (0.461m / 0.99)  0.945V
 VC  VCC  RC I C  1.5  281 0.461m  1.370V
 gm   17.82mA/V
re
Selecting I R1  10 I B  0.1I C  46.1A
I C  g mVT  17.82m  25.852m  0.461mA
VCC  VB 1.5  0.945
R1    12.04k
vout 5 5 I R1 46.1u
 g m RC  5  RC    281 
vin g m 17.82m VB 0.945
R2    22.78k
I R1  I B 46.1u  4.61u
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PSPICE Example
Bias Analysis

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Transient Analysis : Rin & Vout/Vin

Rin  1m /[(19.586u  20.387u ) / 2]  50.3

vout / vin  (1375.5  1365.5) / 2  5.0V/V

Incheon National University – 21 – Chong-Gun Yu

Example
 Find C1 , C B such that the voltage gain reduction is within 10%
at 900MHz.
VA  ,   100, 1/g m  50

 Solution
vout RC

vin 1 / g m  Z C1  Z C B /(   1)
vout RC

vin RB /(   1)  re  RE 10%
RC

RB /(   1)  1 / g m  RE
1 1/ gm 20 20
Z C1    C1    70.7 pF
C1 20 50 50  2  900 M
Z CB 1/ gm 1 101  50
  Z CB    C B  0.7 pF
 1 20 C B 20

Incheon National University – 22 – Chong-Gun Yu

Example
 Determine the voltage gain VA  

 ( RC // R1 )
Av 
re1  RS

 Determine the input resistance 1   2   VA  

 R 
Req  RE //  re 2  B 
  1

Req 1   RB 
Rin  re1   re1   RE //  re 2  
 1  1     1 

Incheon National University – 23 – Chong-Gun Yu

Common-Collector Amplifiers (Emitter Followers)
CC with Biasing
(a) (b) (c)

 (a) the current flowing through R1 and R2 is chosen to be much greater than the base current.
 (b) the emitter follower can operate with a base voltage near VCC
 the collector is tied to VCC → allowing the same voltage for the base without driving Q1 into saturation
 RBIB is chosen much less than the voltage drop across RE, thus lowering the sensitivity to β.
 the bias current of the follower varies with the supply voltage.

 (c) To avoid this effect, integrated circuits bias the follower by means of a current source.

Incheon National University – 24 – Chong-Gun Yu

Capacitively Coupled CC Amplifier
 dc analysis
RB I C RE I C
RB I B  VBE  RE I E  VCC ,  VBE   VCC
 
VCC  VBE
IC  To make IE insensitive to β variations
RB RE

  RE

RB
 RE 
RB
 RE I E  RB I B
   1
IC  I S e VBE / VT

 ac analysis

VA   VA  
Rin  RB //(   1)(re  RE ) Rin  RB //(   1)(re  ro // RE )
Ro  re // RE Ro  re // ro // RE
RE ro // RE
Av  Av 
re  RE re  ro // RE

Incheon National University – 25 – Chong-Gun Yu

Example
 Find dc voltages & currents and Rin , Av
VCC  2.5V, RB  10k, RE  1k
VA  ,   100, I S  5 10 16

 Solution Guess VBE  0.8V

VCC  VBE 2 .5  0 .8 1 .7 I 1.531m

IC     1.531mA  VBE  VT ln C  25.852m  ln 16
 743.2mV
RB RE 10k 1k
  1110 . 1 I S 5  10
  100 0.99
2.5  0.7432 1.583m
IC   1.583mA  VBE  25.852m  ln  744.1mV
1110.1 5 10 16  VT 0.99  25.852m
re     16.2
2.5  0.7441 1.582m gm IC 1.582m
IC   1.582mA  VBE  25.852m  ln  744 . 1mV
1110.1 5 10 16 Rin  RB //(   1)(re  RE )
IC IC  10 // 101  (0.0162  1)  9.112k
IB   15.82μA, I E   1.598mA
  Av 
RE

1
 0.984V/V
VB  VCC  RB I B  2.5  0.1582  2.342V, VE  RE I E  1.598V re  RE 0.0162  1

Incheon National University – 26 – Chong-Gun Yu

PSPICE Example

vout / vin  (1598.4  1596.4) / 2  1.0V/V

vout / vin  (1598.387  1596.419) / 2  0.984V/V

Tools → Options → Cursor Settings

Rin  1m /[(109.741n  109.745n) / 2]  9.112kΩ

Incheon National University – 27 – Chong-Gun Yu

Example
 Determine the voltage gain vout / vin & Rout VA  

R1 vout RE // R2 // ro  R 
VThev  vin  Rout  ( RE // R2 // ro ) //  re  Thev 
R1  RS vThev RThev /(   1)  re  RE // R2 // ro   1
RThev  R1 // RS vout RE // R2 // ro R1  R // RS 
   ( RE // R2 // ro ) //  re  1 
vin RThev /(   1)  re  RE // R2 // ro R1  RS   1 

Incheon National University – 28 – Chong-Gun Yu

 SPICE BJT Models
Ebers-Moll (EM) Model I 
iE  iDE   R iDC   S (e vBE / VT  1)  I S (e vBC / VT  1)
F 
I 
iC   F iDE  iDC  I S (e vBE / VT  1)   S (e vBC / VT  1)
R 
I  vBE / VT I 
iB  (iDE   F iDE )  (iDC   R iDC )   S (e  1)   S (e vBC / VT  1)
 F   R 

Active : VBC  0 & | VBC | VT Sat. : VBC  0 & | VBC | VT

I   1   IS  vBE / VT I 
iE   S e vBE / VT  I S 1     e iE   S e vBE / VT  I S e vBC / VT
F   F  F  F 
I  I   1  I 
iDE   S (e vBE / VT  1) iDC   S (e vBC / VT  1) iC  I S e v BE / VT
 I S   1  I S e vBE / VT iC  I S e vBE / VT   S e vBC / VT
F  R  R  R 
I   1 1   IS  vBE / VT I  I 
nF  nR  1 iB   S e vBE / VT  I S      e iB   S e vBE / VT   S e vBC / VT

 F 
 F  R   F   F   R 

Incheon National University – 29 – Chong-Gun Yu

Transport Form of the EM Model
 exactly equivalent to the EM model
 one less circuit component and one less parameter

Active : VBC  0 & | VBC | VT

I 
iBE   S (e vBE / nFVT  1) I 
 F  iE  iEC  iBE   S e vBE / VT
F 
I  iC  iEC  iBC  I S e vBE / VT
iBC   S (e vBC / nRVT  1)
 R  I 
iB  iBC  iBE   S e vBE / VT
iCE  I S (e vBE / nFVT  e vBC / nRVT )  F 

 v 
iCE  I S (e vBE / nFVT  e vBC / nRVT )1  BC 
 VA 
including Early Effect

Incheon National University – 30 – Chong-Gun Yu

Large-Signal EM Model

 Ohmic resistances
■ rC, rE, rx for the collector, emitter, base region

 Nonlinear capacitances CBE, CBC

■ models the dynamic operation
■ includes a diffusion component and a depletion-layer
component
■ CJS : a depletion capacitance for the collector-substrate
junction of IC transistors.

 For small signals

■ the SPICE model reduces to the hybrid-π model augmented
with rC, rE, and CJS

Incheon National University – 31 – Chong-Gun Yu

Gummel-Poon Model
 The EM model lacks a representation of some second-order effects
■ assumes βF and βR to be constant
■ neglects the variation of the current gains, βF and βR with the current iC

 To account for this and other second-order effects

■ SPICE uses a more accurate, yet more complex model → the Gummel-Poon model

 BF and BR
■ the ideal maximum values of the forward and reverse dc current gains
■ are not equal to the constant current-independent parameters βF(βdc)and βR used in the EM model

 In SPICE, the Gummel-Poon model automatically simplifies to the EM model when certain model
parameters are not specified (VAF, VAR, IKF, IKR)

Incheon National University – 32 – Chong-Gun Yu

SPICE BJT Model Parameters

Incheon National University – 33 – Chong-Gun Yu